By Dr Joris Gerhard Keizer

Journal articles

Hsueh YL; Keith D; Chung Y; Gorman SK; Kranz L; Monir S; Kembrey Z; Keizer JG; Rahman R; Simmons MY, 2024, 'Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale', Advanced Materials, 36, http://dx.doi.org/10.1002/adma.202312736

Reiner J; Chung Y; Misha SH; Lehner C; Moehle C; Poulos D; Monir S; Charde KJ; Macha P; Kranz L; Thorvaldson I; Thorgrimsson B; Keith D; Hsueh YL; Rahman R; Gorman SK; Keizer JG; Simmons MY, 2024, 'High-fidelity initialization and control of electron and nuclear spins in a four-qubit register', Nature Nanotechnology, 19, pp. 605 - 611, http://dx.doi.org/10.1038/s41565-023-01596-9

Kranz L; Osika EN; Monir S; Hsueh YL; Fricke L; Hile SJ; Chung Y; Keizer JG; Rahman R; Simmons MY, 2024, 'Exploiting Atomic Control to Show When Atoms Become Molecules', Advanced Functional Materials, 34, http://dx.doi.org/10.1002/adfm.202307285

Tranter AD; Kranz L; Sutherland S; Keizer JG; Gorman SK; Buchler BC; Simmons MY, 2024, 'Machine Learning-Assisted Precision Manufacturing of Atom Qubits in Silicon', ACS Nano, http://dx.doi.org/10.1021/acsnano.4c00080

Jones MT; Monir MS; Krauth FN; Macha P; Hsueh YL; Worrall A; Keizer JG; Kranz L; Gorman SK; Chung Y; Rahman R; Simmons MY, 2023, 'Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates', ACS Nano, 17, pp. 22601 - 22610, http://dx.doi.org/10.1021/acsnano.3c06668

Donnelly MB; Munia MM; Keizer JG; Chung Y; Huq AMSE; Osika EN; Hsueh YL; Rahman R; Simmons MY, 2023, 'Multi-Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions', Advanced Functional Materials, 33, http://dx.doi.org/10.1002/adfm.202214011

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202201625

Kranz L; Roche S; Gorman SK; Keizer JG; Simmons MY, 2023, 'High-Fidelity CNOT Gate for Donor Electron Spin Qubits in Silicon', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.024068

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202370039

Kiczynski M; Gorman SK; Geng H; Donnelly MB; Chung Y; He Y; Keizer JG; Simmons MY, 2022, 'Engineering topological states in atom-based semiconductor quantum dots', Nature, 606, pp. 694 - 699, http://dx.doi.org/10.1038/s41586-022-04706-0

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2022, 'Erratum: Benchmarking high fidelity single-shot readout of semiconductor qubits (New J. Phys. (2019) 21 (063011) DOI: 10.1088/1367-2630/ab242c/meta)', New Journal of Physics, 24, http://dx.doi.org/10.1088/1367-2630/ac7479

Donnelly MB; Keizer JG; Chung Y; Simmons MY, 2021, 'Monolithic Three-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction', Nano Letters, 21, pp. 10092 - 10098, http://dx.doi.org/10.1021/acs.nanolett.1c03879

Fricke L; Hile SJ; Kranz L; Chung Y; He Y; Pakkiam P; House MG; Keizer JG; Simmons MY, 2021, 'Coherent control of a donor-molecule electron spin qubit in silicon', Nature Communications, 12, http://dx.doi.org/10.1038/s41467-021-23662-3

Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202003361

Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Quantum Computing: Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon (Adv. Mater. 40/2020)', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202070298

He Y; Gorman SK; Keith D; Kranz L; Keizer JG; Simmons MY, 2019, 'A two-qubit gate between phosphorus donor electrons in silicon', Nature, 571, pp. 371 - 375, http://dx.doi.org/10.1038/s41586-019-1381-2

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2019, 'Benchmarking high fidelity single-shot readout of semiconductor qubits', New Journal of Physics, 21, pp. 063011, http://dx.doi.org/10.1088/1367-2630/ab242c

Koch M; Keizer JG; Pakkiam P; Keith D; House MG; Peretz E; Simmons MY, 2019, 'Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor', Nature Nanotechnology, 14, pp. 137 - 140, http://dx.doi.org/10.1038/s41565-018-0338-1

Broome MA; Gorman SK; House MG; Hile SJ; Keizer JG; Keith D; Hill CD; Watson TF; Baker WJ; Hollenberg LCL; Simmons MY, 2018, 'Two-electron spin correlations in precision placed donors in silicon', Nature Communications, 9, pp. 980, http://dx.doi.org/10.1038/s41467-018-02982-x

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, 4, pp. eaaq1459, http://dx.doi.org/10.1126/sciadv.aaq1459

Gorman SK; Broome MA; House MG; Hile SJ; Keizer JG; Keith D; Watson TF; Baker WJ; Simmons MY, 2018, 'Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot', Applied Physics Letters, 112, pp. 243105, http://dx.doi.org/10.1063/1.5021500

Gorman SK; He Y; House MG; Keizer JG; Keith D; Fricke L; Hile SJ; Broome MA; Simmons MY, 2017, 'Tunneling Statistics for Analysis of Spin-Readout Fidelity', Physical Review Applied, 8, pp. 034019, http://dx.doi.org/10.1103/PhysRevApplied.8.034019

Broome MA; Watson TF; Keith D; Gorman SK; House MG; Keizer JG; Hile SJ; Baker W; Simmons MY, 2017, 'High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon', Physical Review Letters, 119, http://dx.doi.org/10.1103/PhysRevLett.119.046802

Broome MA; Gorman SK; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, 'Mapping the chemical potential landscape of a triple quantum dot', Physical Review B, 94, pp. 054314, http://dx.doi.org/10.1103/PhysRevB.94.054314

Gorman SK; Broome MA; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, 'Extracting inter-dot tunnel couplings between few donor quantum dots in silicon', New Journal of Physics, 18, pp. 053041, http://dx.doi.org/10.1088/1367-2630/18/5/053041

Keizer JG; Koelling S; Koenraad PM; Simmons MY, 2015, 'Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers', ACS Nano, 9, pp. 12537 - 12541, http://dx.doi.org/10.1021/acsnano.5b06299

Bietti S; Bocquel J; Adorno S; Mano T; Keizer JG; Koenraad PM; Sanguinetti S, 2015, 'Precise shape engineering of epitaxial quantum dots by growth kinetics', Physical Review B - Condensed Matter and Materials Physics, 92, http://dx.doi.org/10.1103/PhysRevB.92.075425

Keizer JG; McKibbin SR; Simmons MY, 2015, 'The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers', ACS Nano, 9, pp. 7080 - 7084, http://dx.doi.org/10.1021/acsnano.5b01638

Grossi DF; Smereka P; Keizer JG; Ulloa JM; Koenraad PM, 2014, 'Erratum: "Height control of self-assembled quantum dots by strain engineering during capping" (Applied Physics Letters (2014) 105, (143104))', Applied Physics Letters, 105, http://dx.doi.org/10.1063/1.4901731

Grossi DF; Smereka P; Keizer JG; Ulloa JM; Koenraad PM, 2014, 'Height control of self-assembled quantum dots by strain engineering during capping', Applied Physics Letters, 105, http://dx.doi.org/10.1063/1.4897345

McKibbin SR; Polley CM; Scappucci G; Keizer JG; Simmons MY, 2014, 'Low resistivity, super-saturation phosphorus-in-silicon monolayer doping', Applied Physics Letters, 104, pp. 123502, http://dx.doi.org/10.1063/1.4869111

House MG; Peretz E; Keizer JG; Hile SJ; Simmons MY, 2014, 'Single-charge detection by an atomic precision tunnel junction', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4869032

Keizer JG; Ulloa JM; Utrilla AD; Koenraad PM, 2014, 'InAs quantum dot morphology after capping with In, N, Sb alloyed thin films', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4864159

Urbańczyk A; Keizer JG; Koenraad PM; Nötzel R, 2013, 'Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of in nanocrystals', Applied Physics Letters, 102, http://dx.doi.org/10.1063/1.4792700

Keizer JG; Henriques AB; Maia ADB; Quivy AA; Koenraad PM, 2012, 'Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing', Applied Physics Letters, 101, http://dx.doi.org/10.1063/1.4770371

Keizer JG; Koenraad PM; Smereka P; Ulloa JM; Guzman A; Hierro A, 2012, 'Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots', Physical Review B - Condensed Matter and Materials Physics, 85, http://dx.doi.org/10.1103/PhysRevB.85.155326

Jovanov V; Eissfeller T; Kapfinger S; Clark EC; Klotz F; Bichler M; Keizer JG; Koenraad PM; Brandt MS; Abstreiter G; Finley JJ, 2012, 'Highly nonlinear excitonic Zeeman spin splitting in composition-engineered artificial atoms', Physical Review B - Condensed Matter and Materials Physics, 85, http://dx.doi.org/10.1103/PhysRevB.85.165433

Keizer JG; Jo M; Mano T; Noda T; Sakoda K; Koenraad PM, 2011, 'Erratum: Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311) A substrate (Applied Physics Letters (2011) 98 (193112))', Applied Physics Letters, 99, http://dx.doi.org/10.1063/1.3633014

Giddings AD; Keizer JG; Hara M; Hamhuis GJ; Yuasa H; Fukuzawa H; Koenraad PM, 2011, 'Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.205308

Keizer JG; Bozkurt M; Bocquel J; Mano T; Noda T; Sakoda K; Clark EC; Bichler M; Abstreiter G; Finley JJ; Lu W; Rohel T; Folliot H; Bertru N; Koenraad PM, 2011, 'Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy', Journal of Applied Physics, 109, http://dx.doi.org/10.1063/1.3577960

Keizer JG; Jo M; Mano T; Noda T; Sakoda K; Koenraad PM, 2011, 'Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate', Applied Physics Letters, 98, http://dx.doi.org/10.1063/1.3589965

Jo M; Keizer JG; Mano T; Koenraad PM; Sakoda K, 2011, 'Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy', Applied Physics Express, 4, http://dx.doi.org/10.1143/APEX.4.055501

Jovanov V; Eissfeller T; Kapfinger S; Clark EC; Klotz F; Bichler M; Keizer JG; Koenraad PM; Abstreiter G; Finley JJ, 2011, 'Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.161303

Lu W; Bozkurt M; Keizer JG; Rohel T; Folliot H; Bertru N; Koenraad PM, 2011, 'Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure', Nanotechnology, 22, http://dx.doi.org/10.1088/0957-4484/22/5/055703

Keizer JG; Bocquel J; Koenraad PM; Mano T; Noda T; Sakoda K, 2010, 'Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy', Applied Physics Letters, 96, http://dx.doi.org/10.1063/1.3303979

Keizer JG; Clark EC; Bichler M; Abstreiter G; Finley JJ; Koenraad PM, 2010, 'An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step', Nanotechnology, 21, http://dx.doi.org/10.1088/0957-4484/21/21/215705

Kleemans NAJM; Van Bree J; Govorov AO; Keizer JG; Hamhuis GJ; Nötzel R; Silov AY; Koenraad PM, 2010, 'Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea', Nature Physics, 6, pp. 534 - 538, http://dx.doi.org/10.1038/nphys1673

Keizer JG; Garleff JK; Koenraad PM, 2009, 'Simple and efficient scanning tunneling luminescence detection at low-temperature', Review of Scientific Instruments, 80, http://dx.doi.org/10.1063/1.3274675

Paffen ML; Keizer JG; de Winter GV; Arends AJ; Hendrikx AJ, 2008, 'A comparison of the physical properties of four new generation flexible ureteroscopes: (De)flection, flow properties, torsion stiffness, and optical characteristics: Editorial comment', International Braz J Urol, 34, pp. 776

Paffen MLJE; Keizer JG; De Winter GV; Arends AJ; Hendrikx AJM, 2008, 'A comparison of the physical properties of four new generation flexible ureteroscopes: (de)flection, flow properties, torsion stiffness, and optical characteristics', Journal of Endourology, 22, pp. 2227 - 2234, http://dx.doi.org/10.1089/end.2008.0371

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