Select Publications

Journal articles

Lim J; Kim M; Park HH; Jung H; Lim S; Hao X; Choi E; Park S; Lee M; Liu Z; Green MA; Seo J; Park J; Yun JS, 2021, 'Kinetics of light-induced degradation in semi-transparent perovskite solar cells', Solar Energy Materials and Solar Cells, vol. 219, pp. 110776 - 110776, http://dx.doi.org/10.1016/j.solmat.2020.110776

Vicari Stefani B; Soeriyadi A; Wright M; Chen D; Kim M; Zhang Y; Hallam B, 2020, 'Large-Area Boron-Doped 1.6 Ω cm p-Type Czochralski Silicon Heterojunction Solar Cells with a Stable Open-Circuit Voltage of 736 mV and Efficiency of 22.0%', Solar RRL, vol. 4, http://dx.doi.org/10.1002/solr.202000134

Park J; Yoo H; Karade V; Gour KS; Choi E; Kim M; Hao X; Shin SJ; Kim J; Shim H; Kim D; Kim JH; Yun J; Kim JH, 2020, 'Investigation of low intensity light performances of kesterite CZTSe, CZTSSe, and CZTS thin film solar cells for indoor applications', Journal of Materials Chemistry A, vol. 8, pp. 14538 - 14544, http://dx.doi.org/10.1039/d0ta04863a

Chen D; Hamer P; Kim M; Chan C; Ciesla nee Wenham A; Rougieux F; Zhang Y; Abbott M; Hallam B, 2020, 'Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon', Solar Energy Materials and Solar Cells, vol. 207, http://dx.doi.org/10.1016/j.solmat.2019.110353

Ann MH; Kim J; Kim M; Alosaimi G; Kim D; Ha NY; Seidel J; Park N; Yun JS; Kim JH, 2020, 'Device design rules and operation principles of high-power perovskite solar cells for indoor applications', Nano Energy, vol. 68, pp. 104321 - 104321, http://dx.doi.org/10.1016/j.nanoen.2019.104321

Ciesla AM; Bilbao JI; Chan CE; Payne DNR; Chen D; Kim M; Wenham SR; Hallam BJ, 2020, 'Modeling Boron-Oxygen Degradation and Self-Repairing Silicon PV Modules in the Field', IEEE Journal of Photovoltaics, vol. 10, pp. 28 - 40, http://dx.doi.org/10.1109/JPHOTOV.2019.2945161

Vicari Stefani B; Weigand W; Wright M; Soeriyadi A; Yu Z; Kim M; Chen D; Holman Z; Hallam B, 2019, 'P-type Upgraded Metallurgical-Grade Multicrystalline Silicon Heterojunction Solar Cells with Open-Circuit Voltages over 690 mV', Physica Status Solidi (A) Applications and Materials Science, vol. 216, http://dx.doi.org/10.1002/pssa.201900319

Varshney U; Abbott M; Ciesla A; Chen D; Liu S; Sen C; Kim M; Wenham S; Hoex B; Chan C, 2019, 'Evaluating the Impact of SiNx Thickness on Lifetime Degradation in Silicon', IEEE Journal of Photovoltaics, vol. 9, pp. 601 - 607, http://dx.doi.org/10.1109/JPHOTOV.2019.2896671

Chen D; Kim M; Shi J; Vicari Stefani B; Yu Z; Liu S; Einhaus R; Wenham S; Holman Z; Hallam B, 2019, 'Defect engineering of p-type silicon heterojunction solar cells fabricated using commercial-grade low-lifetime silicon wafers', Progress in Photovoltaics: Research and Applications, http://dx.doi.org/10.1002/pip.3230

Sen C; Kim M; Chen D; Varshney U; Liu S; Samadi A; Ciesla A; Wenham SR; Chan CE; Chong C; Abbott MD; Hallam BJ, 2019, 'Assessing the Impact of Thermal Profiles on the Elimination of Light- and Elevated-Temperature-Induced Degradation', IEEE Journal of Photovoltaics, vol. 9, pp. 40 - 48, http://dx.doi.org/10.1109/JPHOTOV.2018.2874769

Liu S; Payne D; Vargas Castrillon C; Chen D; Kim M; Sen C; Varshney U; Hameiri Z; Chan C; Abbott M; Wenham S, 2018, 'Impact of dark annealing on the kinetics of light- and elevated-temperature-induced degradation', IEEE Journal of Photovoltaics, vol. 8, pp. 1494 - 1494, http://dx.doi.org/10.1109/JPHOTOV.2018.2866325

Fung TH; Kim M; Chen D; Chan CE; Hallam BJ; Chen R; Payne DNR; Ciesla A; Wenham SR; Abbott MD, 2018, 'A four-state kinetic model for the carrier-induced degradation in multicrystalline silicon: Introducing the reservoir state', Solar Energy Materials and Solar Cells, vol. 184, pp. 48 - 56, http://dx.doi.org/10.1016/j.solmat.2018.04.024

Chen D; Hamer P; Kim M; bourett-sicotte G; liu S; chan C; ciesla A; chen R; abbott M; hallam B; wenham S, 2018, 'Hydrogen induced degradation: A possible mechanism for light- and elevated temperature- induced degradation in n-type silicon', Solar Energy Materials and Solar Cells, vol. 185, pp. 174 - 182, http://dx.doi.org/10.1016/j.solmat.2018.05.034

Kim M; Chen DANIEL; abbott M; Nampalli ; wenham ; Stefani B; hallam , 2018, 'Impact of interstitial iron on the study of meta-stable B-O defects in Czochralski silicon: Further evidence of a single defect', Journal of Applied Physics, vol. 123, http://dx.doi.org/10.1063/1.5000323

Chen D; Kim M; Stefani BV; Hallam BJ; Abbott MD; Chan CE; Chen R; Payne DNR; Nampalli N; Ciesla A; Fung TH; Kim K; Wenham SR, 2017, 'Evidence of an identical firing-activated carrier-induced defect in monocrystalline and multicrystalline silicon', Solar Energy Materials and Solar Cells, vol. 172, pp. 293 - 300, http://dx.doi.org/10.1016/j.solmat.2017.08.003

Nampalli N; Li H; Kim M; Stefani B; Wenham S; Hallam B; Abbott M, 2017, 'Multiple pathways for permanent deactivation of boron-oxygen defects in p-type silicon', Solar Energy Materials and Solar Cells, vol. 173, pp. 12 - 17, http://dx.doi.org/10.1016/j.solmat.2017.06.041

Hallam B; Kim M; Abbott M; Nampalli N; Nærland T; Stefani B; Wenham S, 2017, 'Recent insights into boron-oxygen related degradation: Evidence of a single defect', Solar Energy Materials and Solar Cells, vol. 173, pp. 25 - 32, http://dx.doi.org/10.1016/j.solmat.2017.06.038

Hallam BJ; Chan CE; Chen R; Wang S; Ji J; Mai L; Abbott MD; Payne DNR; Kim M; Chen D; Chong C; Wenham SR, 2017, 'Rapid mitigation of carrier-induced degradation in commercial silicon solar cells', Japanese Journal of Applied Physics, vol. 56, http://dx.doi.org/10.7567/JJAP.56.08MB13

Hallam B; Chen D; Kim M; Stefani B; Hoex B; Abbott M; Wenham S, 2017, 'The role of hydrogenation and gettering in enhancing the efficiency of next-generation Si solar cells: An industrial perspective', Physica Status Solidi (A) Applications and Materials Science, vol. 214, http://dx.doi.org/10.1002/pssa.201700305

Kim M; Hamer P; Li H; Payne D; Wenham S; Abbott M; Hallam B, 2017, 'Impact of thermal processes on multi-crystalline silicon', Frontiers in Energy, vol. 11, pp. 32 - 41, http://dx.doi.org/10.1007/s11708-016-0427-5

Kim M; Abbott M; Nampalli N; Wenham S; Stefani B; Hallam B, 2017, 'Modulating the extent of fast and slow boron-oxygen related degradation in Czochralski silicon by thermal annealing: Evidence of a single defect', Journal of Applied Physics, vol. 121, http://dx.doi.org/10.1063/1.4975685


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