By Professor Ewa Magdalena Goldys

Conference Papers

Godlewski M; Szmidt J; Olszyna A; Werbowy A; Łusakowska E; Phillips MR; Goldys EM; Sokolowska A, 2004, 'Luminescent properties of wide bandgap materials at room temperature', in Physica Status Solidi C: Conferences, pp. 213 - 218, http://dx.doi.org/10.1002/pssc.200303935

Godlewski M; Łusakowska E; Bozek R; Goldys EM; Phillips MR; Böttcher T; Figge S; Hommel D, 2004, 'Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers', in Physica Status Solidi (A) Applied Research, pp. 212 - 215, http://dx.doi.org/10.1002/pssa.200303903

Phillips MR; Gelhausen O; Goldys EM, 2004, 'Cathodoluminescence properties of zinc oxide nanoparticiles', in Physica Status Solidi (A) Applied Research, pp. 229 - 234, http://dx.doi.org/10.1002/pssa.200303977

Godlewski M; Przybylińska H; Bozek R; Goldys EM; Bergman JP; Monemar B; Grzegory I; Porowski S, 2004, 'Compensation mechanisms in magnesium doped GaN', in Physica Status Solidi (A) Applied Research, pp. 216 - 220, http://dx.doi.org/10.1002/pssa.200303904

Godlewski M; Wojtowicz T; Goldys EM; Phillips MR; Czernecki R; Prystawko P; Leszczynski M; Perlin P; Grzegory I; Porowski S; Böttcher T; Figge S; Hommel D, 2004, 'In-depth and in-plane profiling of light emission properties from semiconductor-based heterostructures', in Opto-Electronics Review, pp. 353 - 359

Godlewski M; Goldys EM; Phillips MR; Böttcher T; Figge S; Hommel D; Czernecki R; Prystawko P; Leszczynski M; Perlin P; Grzegory I; Porowski S, 2004, 'In-depth and in-plane profiling of light emission properties of InGaN-based laser diode', in Physica Status Solidi (A) Applied Research, pp. 207 - 211, http://dx.doi.org/10.1002/pssa.200303902

Godlewski M; Guziewicz E; Kopalko K; Łusakowska E; Dynowska E; Godlewski MM; Goldys EM; Phillips MR, 2003, 'Origin of white color light emission in ALE-grown ZnSe', in Journal of Luminescence, pp. 455 - 459, http://dx.doi.org/10.1016/S0022-2313(02)00597-5

Godlewski M; Ivanov VY; Goldys EM; Phillips M; Böttcher T; Figge S; Hommel D; Czernecki R; Prystawko P; Leszczynski M; Perlin P; Grzegory I; Porowski S, 2003, 'Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission', in Acta Physica Polonica A, pp. 689 - 694, http://dx.doi.org/10.12693/APhysPolA.103.689

Gelhausen O; Phillips MR; Goldys EM; Paskova T; Monemar B; Strassburg M; Hoffmann A, 2003, 'Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN', in Materials Research Society Symposium - Proceedings, pp. 497 - 502, http://dx.doi.org/10.1557/proc-798-y5.20

Gelhausen O; Malguth E; Phillips MR; Goldys EM; Strassburg M; Hoffmann A; Graf T; Gjukic M; Stutzmann M, 2003, 'Optical properties of Mn-doped GaN', in Materials Research Society Symposium - Proceedings, pp. 569 - 574, http://dx.doi.org/10.1557/proc-798-y8.5

Yatsunenko S; Khachapuridze A; Ivanov VY; Godlewski M; Van Khoi L; Gołacki Z; Karczewski G; Goldys EM; Phillips M; Klar PJ; Heimbrodt W, 2003, 'Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction', in Acta Physica Polonica A, pp. 643 - 648, http://dx.doi.org/10.12693/APhysPolA.103.643

Butcher KSA; Afifuddin ; Chen PPT; Godlewski M; Szczerbakow A; Goldys EM; Tansley TL; Freitas JA, 2002, 'Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers', in Journal of Crystal Growth, pp. 237 - 243, http://dx.doi.org/10.1016/S0022-0248(02)01747-5

Paskova T; Paskov PP; Darakchieva V; Goldys EM; Södervall U; Valcheva E; Arnaudov B; Monemar B, 2002, 'Free-standing HVPE-GaN quasi-substrates: Impurity and strain distributions', in Physica Status Solidi C: Conferences, pp. 209 - 213, http://dx.doi.org/10.1002/pssc.200390025

Butcher KSA; Dou H; Goldys EM; Tansley TL; Srikeaw S, 2002, 'Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride', in Physica Status Solidi C: Conferences, pp. 373 - 376, http://dx.doi.org/10.1002/pssc.200390066

Godlewski M; Szczerbakow A; Kopalko K; Lusakowska E; Butcher KSA; Goldys EM; Tansley TL; Barski A, 2002, 'Atomic layer epitaxy of ZnO for substrates for GaN epitaxy', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 13 - 16, http://dx.doi.org/10.1109/COMMAD.2002.1237178

Gelhausen O; Phillips MR; Klein HN; Goldys EM, 2002, 'Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN', in Materials Research Society Symposium - Proceedings, pp. 653 - 658, http://dx.doi.org/10.1557/proc-744-m10.7

Motlan ; Goldys EM; Dao LV, 2002, 'Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition', in Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, pp. 291 - 294, http://dx.doi.org/10.1116/1.1445167

Godlewski M; Goldys EM; Phillips M; Böttcher T; Flgge S; Hommel D; Czernecki R; Prystawko P; Leszczynski M; Perlin P; Wisniewski P; Suski T; Bockowski M; Grzegory I; Porowski S, 2002, 'Relationship between sample morphology and carrier diffusion length in gan thin films', in Acta Physica Polonica A, pp. 627 - 632, http://dx.doi.org/10.12693/APhysPolA.102.627

Ramelan AH; Butcher KSA; Goldys EM, 2002, 'X-ray photoelectron spectroscopy of AlxGa1-xSb grown by metalorganic chemical vapour deposition', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 149 - 152, http://dx.doi.org/10.1109/COMMAD.2002.1237214

Motlan ; Goldys EM, 2001, 'MOCVD GaSb/GaAs quantum dots', in Materials Research Society Symposium - Proceedings

Goldys EM; Godlewski M; Phillips MR; Toropov AA, 2001, 'Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells', in Materials Research Society Symposium - Proceedings

Godlewski M; Goldys EM; Butcher KSA; Phillips MR; Pakula K; Baranowski JM, 2001, 'Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures', in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, WILEY-V C H VERLAG GMBH, COLORADO, DENVER, pp. 179 - 182, presented at 4th International Conference on Nitride Semiconductors (ICNS-4), COLORADO, DENVER, 16 July 2001 - 20 July 2001, http://dx.doi.org/10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.3.CO;2-V

Merinov B; Bourenkov G; Bismayer U, 2001, 'Spatial fluctuations and localisation effects in optical characteristics of p-Doped GaN films', in Physica Status Solidi (B) Basic Research, WILEY-V C H VERLAG GMBH, DENVER, COLORADO, pp. 365 - 369, presented at 4th International Conference on Nitride Semiconductors (ICNS-4), DENVER, COLORADO, 16 July 2001 - 20 July 2001, http://dx.doi.org/10.1002/1521-3951(200004)218

Goldys EM; Paskova T; Sheely J; Schaff W; Eastman LF, 2000, 'Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 133 - 136, http://dx.doi.org/10.1109/COMMAD.2000.1022909

Goldys EM; Godlewski M; Kaminski E; Piotrowska A; Koley G; Spencer MG; Eastman LF, 2000, 'Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 539 - 542, http://dx.doi.org/10.1109/COMMAD.2000.1023006

Ramelan AH; Butcher KSA; Goldys EM; Tansley TL; Tomsia K, 2000, 'Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 125 - 128, http://dx.doi.org/10.1109/COMMAD.2000.1022907

Butcher KSA; Afifuddin ; Chen PPT; Godlewski M; Szczerbakow A; Goldys EM; Tansley TL; Freitas JA, 2000, 'Glass substrates for GaN using ZnO buffer layers', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 535 - 538, http://dx.doi.org/10.1109/COMMAD.2000.1023005

Afifuddin A; Butcher KSA; Chen PPT; Goldys EM; Tansley TL, 2000, 'Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 129 - 132, http://dx.doi.org/10.1109/COMMAD.2000.1022908

Guy IL; Goldys EM; Muensit S, 2000, 'Measurements of piezoelectric coefficients of nitride semiconductor films', in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, pp. 55 - 58, http://dx.doi.org/10.1109/SIM.2000.939197

Buyanova IA; Chen WM; Pozina G; Hai PN; Thinh NQ; Goldys EM; Xin HP; Tu CW, 2000, 'Optical and electronic properties of GaNAs/GaAs structures', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 483 - 490, http://dx.doi.org/10.1109/COMMAD.2000.1022995

Motlan ; Goldys EM; Butcher KSA; Tansley TL, 2000, 'Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 419 - 422, http://dx.doi.org/10.1109/COMMAD.2000.1022979

Godlewski M; Goldys EM; Phillips MR; Ivanov VY; Langer R; Barski A, 2000, 'Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures', in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, pp. 31 - 34, http://dx.doi.org/10.1109/SIM.2000.939192

Ramelan AH; Drozdowicz-Tomsia K; Goldys EM; Tansley TL, 2000, 'Study of optical and electrical properties of GaSb/AlxGa1-xSb grown by MOCVD', in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, pp. 209 - 212, http://dx.doi.org/10.1109/SIM.2000.939228

Motlan M; Goldys EM; Tansley TL, 2000, 'The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD', in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, pp. 236 - 239, http://dx.doi.org/10.1109/SIM.2000.939234

Kaminska E; Piotrowska A; Barcz A; Jasinski J; Zielinski M; Golaszewska K; Davis RF; Goldys E; Tomsia K, 2000, 'Zirconium mediated hydrogen outdiffusion from p-GaN', in MRS Internet Journal of Nitride Semiconductor Research, http://dx.doi.org/10.1557/s1092578300004774

Kaminska E; Piotrowska A; Barcz A; Jasinski J; Zielinski M; Golaszewska K; Davis RF; Goldys E; Tomsia K, 2000, 'Zirconium mediated hydrogen outdiffusion from p-GaN', in Materials Research Society Symposium - Proceedings

Paskova T; Birch J; Tungasmita S; Beccard R; Heuken M; Svedberg EB; Runesson P; Goldys EM; Monemar B, 1999, 'Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers', in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, WILEY-V C H VERLAG GMBH, FRANCE, MONTPELLIER, pp. 415 - 419, presented at 3rd International Conference on Nitride Semiconductors (ICNS 99), FRANCE, MONTPELLIER, 05 July 1999 - 09 July 1999, http://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<415::AID-PSSA415>3.0.CO;2-U

Szczerbakow A; Godlewski M; Dynowska E; Ivanov VY; Swiatek K; Goldys EM; Phillips MR, 1998, 'Structure, surface morphology and optical properties of thin films of ZnS and CdS grown by atomic layer epitaxy', in ACTA PHYSICA POLONICA A, POLISH ACAD SCIENCES INST PHYSICS, POLAND, JASZOWIEC, pp. 579 - 582, presented at XXVII International School on Physics of Semiconducting Compounds, POLAND, JASZOWIEC, 07 June 1998 - 12 June 1998, http://dx.doi.org/10.12693/APhysPolA.94.579

Mitchell A; Goldys EM; Austin MW; Nott GJ, 1996, 'Design of quantum well materials for maximum change in refractive index with minimal loss', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 83 - 86

Nott GJ; Grant KJ; Goldys EM; Willis AP; Atanackovic PB; Marwood W, 1996, 'Effect of component non-idealities on optical oversampled analog-to-digital converter resolution', in Proceedings of the International Symposium on Signal Processing and its Applications, ISSPA, pp. 853 - 855

Arifin P; Tansley TL; Goldys EM, 1996, 'Electron transport in low temperature grown in GaAs', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 349 - 352

Arifin P; Tansley TL; Goldys EM, 1996, 'Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n ⁺GaAs Schottky diodes', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 345 - 348

Subekti A; Goldys EM; Tansley TL, 1996, 'Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 426 - 429

Zuo HY; Zhou B; Goldys EM; Paterson M; Tansley TL, 1996, 'Influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 406 - 409

Galiev VI; Goldys EM; Kruglov AN; Polupanov AF; Tansley TL, 1996, 'Realistic continuum hole states in Si-SiGe quantum wells', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 333 - 336

GODLEWSKI M; GOLDYS E; LIESERT BJH; SIENKIEWICZ A, 1990, 'THE OPTICAL AND ELECTRON-SPIN-RESONANCE DETERMINATION OF GERMANIUM POSITION IN NEUTRON TRANSMUTATION DOPED GAP', in Anastassakis EM; Joannopoulos JD (ed.), 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3, WORLD SCIENTIFIC PUBL CO PTE LTD, GREECE, THESSALONIKI, pp. 646 - 649, presented at 20TH INTERNATIONAL CONF ON THE PHYSICS OF SEMICONDUCTORS, GREECE, THESSALONIKI, 06 August 1990 - 10 August 1990, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1990BS85G00139&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

KHANH DN; GOLDYS E; GRYNBERG M, 1989, 'RESONANCE SCATTERING ON SHALLOW DONOR STATE IN N-GAP DETECTED BY PHOTOCONDUCTIVITY EXPERIMENT', in ACTA PHYSICA POLONICA A, POLISH ACAD SCIENCES INST PHYSICS, POLAND, JASZOWIEC, pp. 261 - 265, presented at 18TH INTERNATIONAL SCHOOL ON PHYSICS OF SEMICONDUCTING COMPOUNDS, POLAND, JASZOWIEC, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1990CT61200012&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

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