Select Publications
Journal articles
2000, 'Surface morphology of cubic and wurtzite GaN films', Applied Surface Science, 153, pp. 143 - 149, http://dx.doi.org/10.1016/S0169-4332(99)00342-6
,2000, 'Zirconium mediated hydrogen outdiffusion from p-GaN', Materials Research Society Symposium - Proceedings, 595, pp. W1091 - W1096
,1999, 'Shear piezoelectric coefficients of gallium nitride and aluminum nitride', Applied Physics Letters, 75, pp. 3965 - 3967, http://dx.doi.org/10.1063/1.125508
,1999, 'Electrostriction in gallium nitride', Applied Physics Letters, 75, pp. 3641 - 3643, http://dx.doi.org/10.1063/1.125414
,1999, 'Extensional piezoelectric coefficients of gallium nitride and aluminum nitride', Applied Physics Letters, 75, pp. 4133 - 4135, http://dx.doi.org/10.1063/1.125560
,1999, 'Intersubband optical absorption in strained double barrier quantum well infrared photodetectors', IEEE Transactions on Electron Devices, 46, pp. 83 - 88, http://dx.doi.org/10.1109/16.737445
,1999, 'Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers', Physica Status Solidi (A) Applied Research, 176, pp. 415 - 419, http://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<415::AID-PSSA415>3.0.CO;2-U
,1999, 'Optical waves in a semiconductor planar microcavity', PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 215, pp. 1157 - 1163, http://dx.doi.org/10.1002/(SICI)1521-3951(199910)215:2<1157::AID-PSSB1157>3.0.CO;2-G
,1999, 'Accurate modelling of absorption and refractive index in a GaAs/AlGaAs quantum well', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 526 - 529
,1999, 'Analysis of the red optical emission in cubic gan grown by molecular-beam epitaxy', Physical Review B - Condensed Matter and Materials Physics, 60, pp. 5464 - 5469, http://dx.doi.org/10.1103/PhysRevB.60.5464
,1999, 'Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide', Journal of Materials Research, 14, pp. 1238 - 1245, http://dx.doi.org/10.1557/JMR.1999.0169
,1999, 'Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy', Journal of Applied Physics, 85, pp. 7888 - 7892, http://dx.doi.org/10.1063/1.370602
,1999, 'Hydride vapour-phase epitaxy growth and cathodoluminescence characterization of thick GaN films', Journal of Crystal Growth, 203, pp. 1 - 11, http://dx.doi.org/10.1016/S0022-0248(99)00088-3
,1999, 'Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 199 - 201
,1999, 'Optical emission bands in cubic GaN grown by MBE', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 202 - 205
,1999, 'Optical waves in a semiconductor planar microcavity', Physica Status Solidi (B) Basic Research, 215, pp. 1157 - 1163, http://dx.doi.org/10.1002/(SICI)1521-3951(199910)215:2<1157::AID-PSSB1157>3.0.CO;2-G
,1999, 'Optical-phonon modes and electron-phonon interaction in arbitrary semiconductor planar microcavities', Physical Review B - Condensed Matter and Materials Physics, 60, pp. 16031 - 16038, http://dx.doi.org/10.1103/PhysRevB.60.16031
,1999, 'Size and density control of MOCVD grown self-organized GaSb islands on GaAs', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 460 - 463
,1999, 'The influence of substrate on the self-organised island nucleation and morphology of metalorganic chemical vapour deposited GaSb', Applied Surface Science, 140, pp. 190 - 196, http://dx.doi.org/10.1016/S0169-4332(98)00590-X
,1998, 'Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence', Applied Physics Letters, 73, pp. 3583 - 3585, http://dx.doi.org/10.1063/1.122831
,1998, 'Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN', Applied Physics Letters, 73, pp. 3686 - 3688, http://dx.doi.org/10.1063/1.122863
,1998, 'Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition', Applied Physics Letters, 73, pp. 1233 - 1235, http://dx.doi.org/10.1063/1.122137
,1998, 'Tunnelling transport in Al-n-GaSb schottky diodes', IEEE Transactions on Electron Devices, 45, pp. 2247 - 2248, http://dx.doi.org/10.1109/16.725261
,1998, 'Linear and nonlinear intersubband optical absorption in a strained double barrier quantum well', PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 210, pp. 237 - 248, http://dx.doi.org/10.1002/(SICI)1521-3951(199811)210:1<237::AID-PSSB237>3.0.CO;2-V
,1998, 'Metalorganic chemical vapour deposition of GaSb quantum dots on germanium', Thin Solid Films, 320, pp. 166 - 168, http://dx.doi.org/10.1016/S0040-6090(98)00348-4
,1998, 'Band offsets in In
1998, 'Characterisation of microcrystalline GaN grown on quartz and on sapphire by laser and microwave plasma enhanced metalorganic chemical vapour deposition', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37, pp. 426 - 431, http://dx.doi.org/10.1143/jjap.37.426
,1998, 'Growth, characterization, and laser potential of Tm : La2Be2O5', JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 15, pp. 239 - 246, http://dx.doi.org/10.1364/JOSAB.15.000239
,1998, 'Growth, characterization, and laser potential of Tm:La
1998, 'Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics', Superlattices and Microstructures, 23, pp. 107 - 111, http://dx.doi.org/10.1006/spmi.1996.0290
,1998, 'Linear and Nonlinear Intersubband Optical Absorption in a Strained Double Barrier Quantum Well', Physica Status Solidi (B) Basic Research, 210, pp. 237 - 248, http://dx.doi.org/10.1002/(SICI)1521-3951(199811)210:1<237::AID-PSSB237>3.0.CO;2-V
,1998, 'Low temperature growth of gallium nitride on quartz and sapphire substrates', Materials Science Forum, 264-268, pp. 1205 - 1208, http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1205
,1998, 'Mechanisms of yellow and red photoluminescence in wurtzite and cubic GaN', Acta Physica Polonica A, 94, pp. 326 - 330, http://dx.doi.org/10.12693/APhysPolA.94.326
,1998, 'Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si', MRS Internet Journal of Nitride Semiconductor Research, 3, http://dx.doi.org/10.1557/S109257830000123X
,1998, 'Morphology and optical properties of laser-assisted chemical vapour deposited GaN', Acta Physica Polonica A, 94, pp. 331 - 335, http://dx.doi.org/10.12693/APhysPolA.94.331
,1997, 'Interisland exciton migration and enhanced bound exciton recombination in an AlGaAs/GaAs quantum well structure grown by molecular beam epitaxy without growth interruptions at interfaces', Semiconductor Science and Technology, 12, pp. 1416 - 1421, http://dx.doi.org/10.1088/0268-1242/12/11/014
,1997, 'Type I and type II alignment of the light hole band in In0.15Ga0.85As/GaAs and in In0.15Ga0.85As/Al0.15Ga0.85As strained quantum wells', JOURNAL OF ELECTRONIC MATERIALS, 26, pp. 922 - 927, http://dx.doi.org/10.1007/s11664-997-0275-5
,1997, 'Operation and theoretical analysis of the multiple asymmetric coupled quantum-well light modulator in the n-i-n configuration', IEEE Journal of Quantum Electronics, 33, pp. 1084 - 1088, http://dx.doi.org/10.1109/3.594869
,1997, 'Conduction mechanism in a metal-insulator-semiconductor structure with a low temperature GaAs insulating layer', Solid-State Electronics, 41, pp. 1075 - 1078, http://dx.doi.org/10.1016/S0038-1101(97)00061-0
,1997, 'On the origin of the yellow donor-acceptor pair emission in GaN', Materials Science Forum, 258-263, pp. 1149 - 1154, http://dx.doi.org/10.4028/www.scientific.net/msf.258-263.1149
,1997, 'Type I and type II alignment of the light hole band in In
1996, 'Photoreflectance of Al
1995, 'Current-voltage nonlinearity in the multiquantum well nin modulator structure', Electronics Letters, 31, pp. 2040 - 2041, http://dx.doi.org/10.1049/el:19951366
,1995, 'Electron mobility in low temperature grown gallium arsenide', Materials Science and Engineering B, 35, pp. 330 - 333, http://dx.doi.org/10.1016/0921-5107(95)01347-4
,1995, 'Exact hole-bound states for semiconductor quantum wells with arbitrary potential profiles', Superlattices and Microstructures, 17, pp. 421 - 429, http://dx.doi.org/10.1006/spmi.1995.1075
,1995, 'Monte Carlo simulation of electron drift velocity in low-temperature-grown gallium arsenide in a Schottky-barrier model', Physical Review B, 52, pp. 5708 - 5713, http://dx.doi.org/10.1103/PhysRevB.52.5708
,1994, 'Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure', Journal of Applied Physics, 75, pp. 4194 - 4200, http://dx.doi.org/10.1063/1.356004
,1994, 'Electronic band structure of AlxGa1-xAs/AlyGa1-yAs/GaAs double-barrier superlattices', Physical Review B, 50, pp. 2409 - 2419, http://dx.doi.org/10.1103/PhysRevB.50.2409
,1994, 'Quantum confined light modulators', Microelectronics Journal, 25, pp. 697 - 712, http://dx.doi.org/10.1016/0026-2692(94)90135-X
,1993, 'Germanium-doped gallium phosphide obtained by neutron irradiation', Journal of Applied Physics, 74, pp. 2287 - 2293, http://dx.doi.org/10.1063/1.354712
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