By Scientia Professor Michelle Yvonne Simmons

Journal articles

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362

Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, 3, http://dx.doi.org/10.1126/sciadv.1602811

Cooil SP; Mazzola F; Klemm HW; Peschel G; Niu YR; Zakharov AA; Simmons MY; Schmidt T; Evans DA; Miwa JA; Wells JW, 2017, 'In Situ Patterning of Ultrasharp Dopant Profiles in Silicon', ACS Nano, 11, pp. 1683 - 1688, http://dx.doi.org/10.1021/acsnano.6b07359

Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques (vol 6, 31830, 2016)', SCIENTIFIC REPORTS, 6, http://dx.doi.org/10.1038/srep38120

House MG; Bartlett I; Pakkiam P; Koch M; Peretz E; Van Der Heijden J; Kobayashi T; Rogge S; Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, 6, pp. 044016, http://dx.doi.org/10.1103/PhysRevApplied.6.044016

Shamim S; Weber B; Thompson DW; Simmons MY; Ghosh A, 2016, 'Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon', Nano Letters, 16, pp. 5779 - 5784, http://dx.doi.org/10.1021/acs.nanolett.6b02513

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83

Weber B; Simmons MY, 2016, 'Determining the quantum-coherent to semiclassical transition in atomic-scale quasi-one-dimensional metals', Physical Review B, 94, pp. 081412, http://dx.doi.org/10.1103/PhysRevB.94.081412

Broome MA; Gorman SK; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, 'Mapping the chemical potential landscape of a triple quantum dot', Physical Review B, 94, pp. 054314, http://dx.doi.org/10.1103/PhysRevB.94.054314

Wang Y; Chen CY; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques', Scientific Reports, 6, http://dx.doi.org/10.1038/srep31830

Li T; Yeoh LA; Srinivasan A; Klochan O; Ritchie DA; Simmons MY; Sushkov OP; Hamilton AR, 2016, 'Erratum: Manifestation of a non-Abelian Berry phase in a p -type semiconductor system (Physical Review B - Condensed Matter and Materials Physics (2016) 93 (205424) DOI: 10.1103/PhysRevB.93.205424)', Physical Review B, 93, http://dx.doi.org/10.1103/PhysRevB.93.239903

Li T; Yeoh LA; Srinavasan A; Klochan O; Ritchie DA; Simmons MY; Sushkov OP; Hamilton AR; Srinivasan A, 2016, 'Manifestation of a non-Abelian Berry phase in a p -type semiconductor system', Physical Review B, 93, pp. 205424, http://dx.doi.org/10.1103/PhysRevB.93.205424

Gorman SK; Broome MA; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, 'Extracting inter-dot tunnel couplings between few donor quantum dots in silicon', New Journal of Physics, 18, pp. 053041, http://dx.doi.org/10.1088/1367-2630/18/5/053041

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, 7, http://dx.doi.org/10.1038/ncomms11342

Kobayashi T; Van Der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, 108, http://dx.doi.org/10.1063/1.4945736

Warschkow O; Curson NJ; Schofield SR; Marks NA; Wilson HF; Radny MW; Smith PV; Reusch TCG; McKenzie DR; Simmons MY, 2016, 'Reaction paths of phosphine dissociation on silicon (001)', Journal of Chemical Physics, 144, pp. 014705, http://dx.doi.org/10.1063/1.4939124

Wang Y; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2016, 'Highly tunable exchange in donor qubits in silicon', npj Quantum Information, 2, http://dx.doi.org/10.1038/npjqi.2016.8

Büch H; Fuechsle M; Baker W; House MG; Simmons MY, 2015, 'Quantum dot spectroscopy using a single phosphorus donor', Physical Review B - Condensed Matter and Materials Physics, 92, pp. 235309, http://dx.doi.org/10.1103/PhysRevB.92.235309

Watson TF; Weber B; Büch H; Fuechsle M; Simmons MY, 2015, 'Charge sensing of a few-donor double quantum dot in silicon', Applied Physics Letters, 107, pp. 233511, http://dx.doi.org/10.1063/1.4937576

Keizer JG; Koelling S; Koenraad PM; Simmons MY, 2015, 'Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers', ACS Nano, 9, pp. 12537 - 12541, http://dx.doi.org/10.1021/acsnano.5b06299

House MG; Kobayashi T; Weber B; Hile SJ; Watson TF; Van Der Heijden J; Rogge S; Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, 6, pp. 8848, http://dx.doi.org/10.1038/ncomms9848

Watson TF; Weber B; House MG; Büch H; Simmons MY; Buch H, 2015, 'High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D- Charge State', Physical Review Letters, 115, pp. 166806, http://dx.doi.org/10.1103/PhysRevLett.115.166806

Hill CD; Peretz E; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY; Hollenberg LCL, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, 1, http://dx.doi.org/10.1126/sciadv.1500707

Gorman SK; Broome MA; Baker WJ; Simmons MY, 2015, 'Impact of nuclear spin dynamics on electron transport through donors', Physical Review B - Condensed Matter and Materials Physics, 92, pp. 125413, http://dx.doi.org/10.1103/PhysRevB.92.125413

Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4929827

Scappucci G; Klesse WM; Yeoh LA; Carter DJ; Warschkow O; Marks NA; Jaeger DL; Capellini G; Simmons MY; Hamilton AR, 2015, 'Bottom-up assembly of metallic germanium', Scientific Reports, 5, http://dx.doi.org/10.1038/srep12948

Keizer JG; McKibbin SR; Simmons MY, 2015, 'The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers', ACS Nano, 9, pp. 7080 - 7084, http://dx.doi.org/10.1021/acsnano.5b01638

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, 91, pp. 245209, http://dx.doi.org/10.1103/PhysRevB.91.245209

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, 106, pp. 203110, http://dx.doi.org/10.1063/1.4921640

Ryu H; Lee S; Fuechsle M; Miwa JA; Mahapatra S; Hollenberg LCL; Simmons MY; Klimeck G, 2015, 'A tight-binding study of single-atom transistors', Small, 11, pp. 374 - 381, http://dx.doi.org/10.1002/smll.201400724

Simmons M, 2015, 'A new horizon for quantum information', npj Quantum Information, 1, pp. 15013, http://dx.doi.org/10.1038/npjqi.2015.13

Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R; Buch H, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, 113, pp. 246406, http://dx.doi.org/10.1103/PhysRevLett.113.246406

Weber B; Ryu H; Tan YHM; Klimeck G; Simmons MY, 2014, 'Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon Wires', Physical Review Letters, 113, pp. 246802, http://dx.doi.org/10.1103/PhysRevLett.113.246802

Yeoh LA; Srinivasan A; Klochan O; Winkler R; Zülicke U; Simmons MY; Ritchie DA; Pepper M; Hamilton AR, 2014, 'Noncollinear paramagnetism of a GaAs two-dimensional hole system', Physical Review Letters, 113, pp. 236401, http://dx.doi.org/10.1103/PhysRevLett.113.236401

Mazzola F; Edmonds MT; Høydalsvik K; Carter DJ; Marks NA; Cowie BCC; Thomsen L; Miwa J; Simmons MY; Wells JW, 2014, 'Determining the electronic confinement of a subsurface metallic state', ACS Nano, 8, pp. 10223 - 10228, http://dx.doi.org/10.1021/nn5045239

Calandrini E; Ortolani M; Nucara A; Scappucci G; Klesse WM; Simmons MY; Di Gaspare L; De Seta M; Sabbagh D; Capellini G; Virgilio M; Baldassarre L, 2014, 'Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy', Journal of Optics (United Kingdom), 16, pp. 094010, http://dx.doi.org/10.1088/2040-8978/16/9/094010

Capellini G; Klesse WM; Mattoni G; Simmons MY; Scappucci G, 2014, 'Invited; Alternative High n-Type Doping Techniques in Germanium', ECS Meeting Abstracts, MA2014-02, pp. 1651 - 1651, http://dx.doi.org/10.1149/ma2014-02/31/1651

Oberbeck L; Reusch TCG; Hallam T; Schofield SR; Curson NJ; Simmons MY, 2014, 'Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.48846541

Oberbeck L; Reusch TCG; Hallam T; Schofield SR; Curson NJ; Simmons MY, 2014, 'Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy', Applied Physics Letters, 104, pp. 253102, http://dx.doi.org/10.1063/1.4884654

Shamim S; Mahapatra S; Scappucci G; Klesse WM; Simmons MY; Ghosh A, 2014, 'Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium', Physical Review Letters, 112, pp. 236602, http://dx.doi.org/10.1103/PhysRevLett.112.236602

Mazzola F; Polley CM; Miwa JA; Simmons MY; Wells JW, 2014, 'Disentangling phonon and impurity interactions in δ-doped Si(001)', Applied Physics Letters, 104, pp. 173108, http://dx.doi.org/10.1063/1.4874651

Lee WCT; McKibbin SR; Thompson DL; Xue K; Scappucci G; Bishop N; Celler GK; Carroll MS; Simmons MY, 2014, 'Lithography and doping in strained Si towards atomically precise device fabrication', Nanotechnology, 25, pp. 145302, http://dx.doi.org/10.1088/0957-4484/25/14/145302

Watson TF; Weber B; Miwa JA; Mahapatra S; Heijnen RMP; Simmons MY, 2014, 'Transport in asymmetrically coupled donor-based silicon triple quantum dots', Nano Letters, 14, pp. 1830 - 1835, http://dx.doi.org/10.1021/nl4045026

McKibbin SR; Polley CM; Scappucci G; Keizer JG; Simmons MY, 2014, 'Low resistivity, super-saturation phosphorus-in-silicon monolayer doping', Applied Physics Letters, 104, pp. 123502, http://dx.doi.org/10.1063/1.4869111

House MG; Peretz E; Keizer JG; Hile SJ; Simmons MY, 2014, 'Single-charge detection by an atomic precision tunnel junction', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4869032

Miwa JA; Warschkow O; Carter DJ; Marks NA; Mazzola F; Simmons MY; Wells JW, 2014, 'Valley splitting in a silicon quantum device platform', Nano Letters, 14, pp. 1515 - 1519, http://dx.doi.org/10.1021/nl404738j

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941

Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2014, 'Spin blockade and exchange in Coulomb-confined silicon double quantum dots', Nature Nanotechnology, 9, pp. 430 - 435, http://dx.doi.org/10.1038/nnano.2014.63

Mattoni G; Klesse WM; Capellini G; Simmons MY; Scappucci G, 2013, 'Phosphorus Molecules on Ge(001): A Playground for Controlled n-Doping of Germanium at High Densities', ACS Nano, 7, pp. 11310 - 11316, http://dx.doi.org/10.1021/nn4051634

Carter DJ; Warschkow O; Gale JD; Scappucci G; Klesse WM; Capellini G; Rohl AL; Simmons MY; McKenzie DR; Marks NA, 2013, 'Electronic structure of phosphorus and arsenic δ-doped germanium', Physical Review B - Condensed Matter and Materials Physics, 88, http://dx.doi.org/10.1103/PhysRevB.88.115203

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