By Scientia Professor Michelle Yvonne Simmons

Journal articles

Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2013, 'Silicon Quantum Electronics', Reviews of Modern Physics, 85, pp. 961 - 1019, http://dx.doi.org/10.1103/RevModPhys.85.961

Klesse WM; Scappucci G; Capellini G; Hartmann J; Simmons MY, 2013, 'Atomic layer doping of strained Ge-on-insulator thin films with high electron densities', Applied Physics Letters, 102, pp. 151103, http://dx.doi.org/10.1063/1.4801981

Simmons MY; Weber B; Hollenberg L; Klimeck G, 2013, 'Atomistic Modelling of metallic nanowires in silicon', Nanoscale, 5, pp. 8666 - 8674, http://dx.doi.org/10.1039/C3NR01796F

Miwa JA; Hofmann P; Simmons MY; Wells JW, 2013, 'Direct measurement of the band structure of a buried two-dimensional electron gas', Physical Review Letters, 110, pp. 136801, http://dx.doi.org/10.1103/PhysRevLett.110.136801

Huang TY; Liang CT; Chen YF; Simmons MY; Kim G; Ritchie DA, 2013, 'Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas', Nanoscale research letters, 8, pp. 1 - 6, http://dx.doi.org/10.1186/1556-276X-8-138

McKibbin S; Scappucci G; Pok W; Simmons MY, 2013, 'Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture', Nanotechnology, 24, pp. 045303-1 - 045303-6, http://dx.doi.org/10.1088/0957-4484/24/4/045303

Simmons MY; Polley CM; Miwa JA; Scappucci G, 2013, 'Exploring the limits of N-Type ultra-shallow junction formation', ACS Nano, 7, pp. 5499 - 5505, http://dx.doi.org/10.1021/nn4016407

Simmons MY; Miwa JA; Rogge S; Mol J; Salfi J, 2013, 'Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants', Physical Review B, 87, pp. 245417, http://arxiv.org/abs/1303.2712

Polley CM; Clarke WR; Miwa JA; Simmons MY; Wells JW, 2013, 'Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon', Applied Physics Letters, 101, http://dx.doi.org/10.1063/1.4773485

Simmons MY; Scappucci G, 2013, 'New avenues to an old material: controlled nanoscale doping of germanium', Nanoscale, 5, pp. 2600 - 2615, http://dx.doi.org/10.1039/c3nr34258a

Buch H; Mahapatra S; Rahman R; Morello A; Simmons MY, 2013, 'Spin readout and addressability of phosphorus-donor clusters in silicon', Nature communications, 4, pp. Article number: 2017, http://dx.doi.org/10.1038/ncomms3017

Simmons MY; Xue K, 2013, 'Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication', Applied Surface Science, 265, pp. 833 - 838, http://dx.doi.org/10.1016/j.apsusc.2012.11.129

Simmons MY; Miwa JA; Mol J; Rogge S; Salfi J, 2013, 'Transport through a single donor in p-type silicon', Applied Physics Letters, 103, pp. 043106, http://dx.doi.org/10.1063/1.4816439

Fuechsle M; Miwa JA; Mahapatra S; Ryu H; Lee S; Warschkow O; Hollenberg ; Klimeck ; Simmons MY, 2012, 'A single-atom transistor', Nature Nanotechnology, 7, pp. 242 - 246, http://dx.doi.org/10.1038/nnano.2012.21

Drumm D; Hollenberg ; Simmons MY; Friesen M, 2012, 'Effective mass theory of monolayer ä doping in the high-density limit', Physical Review B, 85, pp. 155419-1 - 155419-14, http://dx.doi.org/10.1103/PhysRevB.85.155419

Weber B; Mahapatra S; Watson T; Simmons MY, 2012, 'Engineering independent electrostatic control of atomic-scale (~4 nm) silicon double quantum dots', Nano Letters, 12, pp. 4001 - 4006, http://dx.doi.org/10.1021/nl3012903

Scappucci G; Warschkow O; Capellini G; Klesse WM; Mackenzie DR; Simmons MY, 2012, 'N-type doping of germanium from phosphine: Early stages resolved at the atomic level', Physical Review Letters, 109, pp. 076101-1 - 076101-4, http://dx.doi.org/10.1103/PhysRevLett.109.076101

Weber B; Mahapatra S; Mahapatra S; Ryu H; Lee S; Fuhrer A; Reusch TC; Thompson DL; Lee WC; Klimeck ; Hollenberg ; Simmons MY, 2012, 'Ohm's law survives to the atomic scale', Science, 335, pp. 64 - 67, http://dx.doi.org/10.1126/science.1214319

Fuechsle MM; Miwa JA; Mahapatra S; Warschkow O; Hollenberg ; Simmons MY, 2012, 'Realisation of a single-atom transistor in silicon', Journal and Proceedings of Royal Society of New South Wales, 145, pp. 66 - 74, http://nsw.royalsoc.org.au/publications/journal_2000_on/J_Proc_RSNSW_Vol_145_Nos_443_444_Fuechsle.pdf

Fuechsle M; Miwa JA; Mahapatra S; Warschkow O; Hollenberg LCL; Simmons MY, 2012, 'Realisation of a single-atom transistor in silicon', Journal and proceedings of the Royal Society of New South Wales, 145, pp. 66 - 74, http://dx.doi.org/10.5962/p.361666

Scappucci G; Klesse WM; Hamilton AR; Capellini G; Jaeger DL; Bischof MR; Reidy RF; Simmons MY, 2012, 'Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport', Nano Letters, 12, pp. 4953 - 4959, http://dx.doi.org/10.1021/nl302558b

Scappucci G; Capellini G; Johnston B; Klesse WM; Miwa JA; Simmons MY, 2011, 'A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium', Nano Letters, 11, pp. 2272 - 2279, http://dx.doi.org/10.1021/nl200449v

Mahapatra S; Buch H; Simmons MY, 2011, 'Charge sensing of precisely positioned p donors in si', Nano Letters, 11, pp. 4376 - 4381, http://dx.doi.org/10.1021/nl2025079

Polley CM; Clarke WR; Simmons MY, 2011, 'Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements', Nanoscale research letters, 6, pp. 538-1 - 538-5, http://dx.doi.org/10.1186/1556-276X-6-538

Scappucci G; Capellini G; Klesse WM; Simmons MY, 2011, 'Dual-temperature encapsulation of phosphorus in germanium d-layers toward ultra-shallow junctions', Journal of Crystal Growth, 316, pp. 81 - 84, http://dx.doi.org/10.1016/j.jcrysgro.2010.12.046

Lee S; Ryu H; Capbell H; Hollenberg ; Simmons MY; Klimeck , 2011, 'Electronic structure of realistically extended atomistically resolved disordered Si:P delta-doped layers', Physical Review B, 84, pp. 205309-1 - 205309-9, http://dx.doi.org/10.1103/PhysRevB.84.205309

Scappucci G; Capellini G; Klesse WM; Simmons MY, 2011, 'Phosphorus atomic layer doping of germanium by the stacking of multiple ä layers', Nanotechnology, 22, pp. 375203-1 - 375203-5, http://dx.doi.org/10.1088/0957-4484/22/37/375203

Klesse WM; Scappucci G; Capellini G; Simmons MY, 2011, 'Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices', Nanotechnology, 22, pp. 145604-1 - 145604-7, http://dx.doi.org/10.1088/0957-4484/22/14/145604

Shsmim S; Mahapatra S; Polley CM; Simmons MY; Ghosh A, 2011, 'Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P ä layers', Physical Review B, 83, pp. 233304-1 - 233304-4, http://dx.doi.org/10.1103/PhysRevB.83.233304

Ryu H; Lee S; Weber B; Mahapatra S; Simmons MY; Hollenberg LCL; Klimeck G, 2010, 'Quantum transport in ultra-scaled phosphorous-doped silicon nanowires', 2010 Silicon Nanoelectronics Workshop, SNW 2010, http://dx.doi.org/10.1109/SNW.2010.5562585

Lee WC; Scappucci G; Thompson DL; Simmons MY, 2010, 'Development of a tunable donor quantum dot in silicon', Applied Physics Letters, 96, pp. 43116-1 - 43116-3, http://dx.doi.org/10.1063/1.3299726

Lin H; Rauba J; Thygesen K; Jacobsen K; Simmons MY; Hofer W, 2010, 'First-principles modelling of scanning tunneling microscopy using non-equilibrium Green’s functions', Frontiers of Physics In China, 5, pp. 369 - 379, http://dx.doi.org/10.1007/s11467-010-0133-4

McKibbin S; Clarke WR; Fuhrer A; Simmons MY, 2010, 'Optimizing dopant activation in Si:P double δ-layers', Journal of Crystal Growth, 312, pp. 3247 - 3250, http://dx.doi.org/10.1016/j.jcrysgro.2010.08.003

Reusch TC; Fuhrer A; Fuchsle M; Weber B; Simmons MY, 2009, 'Aharonov-Bohm oscillations in a nanoscale dopant ring in silicon', Applied Physics Letters, 95, pp. 032110-1 - 032110-3, http://dx.doi.org/10.1063/1.3186031

Scappucci G; Capellini G; Lee WC; Simmons MY, 2009, 'Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy', Nanotechnology, 20, pp. 495302 - 495302

Fuhrer A; Fuechsle MM; Reusch TC; Weber B; Simmons MY, 2009, 'Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon', Nano Letters, 9, pp. 707 - 710, http://dx.doi.org/10.1021/nl803196f

Goh KE; Simmons MY, 2009, 'Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices', Applied Physics Letters, 95, pp. 142104-1 - 142104-3, http://dx.doi.org/10.1063/1.3245313

Scappucci G; Capellini G; Simmons MY, 2009, 'Influence of encapsulation temperature on Ge:P δ-doped layers', Physical Review - Section B - Condensed Matter, 80, pp. 233202.1 - 233202.4, http://dx.doi.org/10.1103/PhysRevB.80.233202

McKibbin S; Clarke WR; Fuhrer A; Reusch TC; Simmons MY, 2009, 'Investigating the regrowth surface of Si:P a-layers toward vertically stacked three dimensional devices', Applied Physics Letters, 95, pp. 233111-1 - 233111-3, http://dx.doi.org/10.1063/1.3269924

McKibbin S; Clarke WR; Simmons MY, 2009, 'Investigating the surface quality and confinement of Si:P δ-layers at different growth temperatures', Physica E - Low - Dimensional Systems and Nanostructures, 42, pp. 1180 - 1183, http://dx.doi.org/10.1016/j.physe.2009.11.111

Scappucci G; Capellini G; Lee WC; Simmons MY, 2009, 'Ultradense phosphorus in germanium delta-doped layers', Applied Physics Letters, 94, pp. 162106-1 - 162106-3, http://dx.doi.org/10.1063/1.3123391

Danneau RJ; Klochan O; Clarke WR; Ho L; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, '0.7 Structure and zero bias anomaly in ballistic hole quantum wires', Physical Review Letters, 100

Graham AC; Simmons MY; Ritchie DA; Pepper M, 2008, 'Anticrossing of spin-spin subbands in quasi-one-dimensional wires', Physical Review Letters, 100, pp. 226804 - 226807

Simmons MY; Ruess FJ; Goh KE; Pok W; Hallam T; Butcher M; Reusch TC; Scappucci G; Hamilton AR; Oberbeck L, 2008, 'Atomic-scale silicon device fabrication', INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 5, pp. 352 - 369, http://dx.doi.org/10.1504/IJNT.2008.016923

Ruess FJ; Scappucci G; Fuchsle M; Pok W; Fuhrer A; Thompson DL; Reusch TC; Simmons MY, 2008, 'Demonstration of gating action in atomically controlled Si:P nanodots defined by scanning probe microscopy', Physica E - Low - Dimensional Systems and Nanostructures, 40, pp. 1006 - 1009, http://dx.doi.org/10.1016/j.physe.2007.08.057

Ho L; Clarke WR; Micolich AP; Danneau RJ; Klochan O; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, 'Effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems', Physical Review B: Condensed Matter and Materials Physics, 77

Liang CT; Li Y; Lin L; Lin P; Yang C; Tseng Y; Chen K; Cooper N; Simmons MY; Ritchie DA, 2008, 'Electron heating and huge positive magnetoresistance in an AlGaAs/GaAs high electron mobility transistor structure at high temperatures', Applied Physics Letters, 92, pp. 152117 - 152119, http://dx.doi.org/10.1063/1.2912526

Goh KE; Simmons MY; Hamilton AR, 2008, 'Electron-electron interactions in highly disordered two-dimensional systems', Physical Review - Section B - Condensed Matter, 77, pp. 235410 - 235418

Goh KE; Augarten Y; Oberbeck L; Simmons MY, 2008, 'Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal', Applied Physics Letters, 93, pp. 142105 - 142107

Bassett L; Michael C; Kataoka M; Simmons MY; Ritchie DA; Barnes CW; Ford CJ, 2008, 'Geometric suppression of single-particle energy spacings in quantum antidots', Physica E - Low - Dimensional Systems and Nanostructures, 40, pp. 1633 - 1636, http://dx.doi.org/10.1016/j.physe.2007.10.062

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