By Scientia Professor Sven Rogge

Journal articles

Salfi J; Mol JA; Culcer D; Rogge S, 2016, 'Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon', Physical Review Letters, 116, http://dx.doi.org/10.1103/PhysRevLett.116.246801

Salfi J; Tong M; Rogge S; Culcer D, 2016, 'Quantum computing with acceptor spins in silicon', Nanotechnology, 27, http://dx.doi.org/10.1088/0957-4484/27/24/244001

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, 7, http://dx.doi.org/10.1038/ncomms11342

Kobayashi T; Van Der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, 108, http://dx.doi.org/10.1063/1.4945736

Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2016, 'Donor wave functions in Si gauged by STM images', Physical Review B, 93, http://dx.doi.org/10.1103/PhysRevB.93.045303

Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal', Physical Review A - Atomic, Molecular, and Optical Physics, 92, http://dx.doi.org/10.1103/PhysRevA.92.062313

House MG; Kobayashi T; Weber B; Hile SJ; Watson TF; Van Der Heijden J; Rogge S; Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, 6, pp. 8848, http://dx.doi.org/10.1038/ncomms9848

Klymenko MV; Rogge S; Remacle F, 2015, 'Multivalley envelope function equations and effective potentials for phosphorus impurity in silicon', Physical Review B - Condensed Matter and Materials Physics, 92, http://dx.doi.org/10.1103/PhysRevB.92.195302

Hill CD; Peretz E; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY; Hollenberg LCL, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, 1, http://dx.doi.org/10.1126/sciadv.1500707

Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4929827

Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, 'A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4928589

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, 91, pp. 245209, http://dx.doi.org/10.1103/PhysRevB.91.245209

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, 106, pp. 203110, http://dx.doi.org/10.1063/1.4921640

Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207

Schofield SR; Rogge S, 2015, 'Single dopants in semiconductors', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/150301

Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203

Agundez RR; Salfi J; Rogge S; Blaauboer M, 2015, 'Local Kondo temperatures in atomic chains', Physical Review B - Condensed Matter and Materials Physics, 91, http://dx.doi.org/10.1103/PhysRevB.91.041117

Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, 'Charge dynamics and spin blockade in a hybrid double quantum dot in silicon', Physical Review X, 5, http://dx.doi.org/10.1103/PhysRevX.5.031024

Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, 'An accurate single-electron pump based on a highly tunable silicon quantum dot', Nano Letters, 14, pp. 3405 - 3411, http://dx.doi.org/10.1021/nl500927q

Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S; Verduijn A, 2014, 'Probing the spin states of a single acceptor atom', Nano Letters, 14, pp. 1492 - 1496, http://dx.doi.org/10.1021/nl4047015

Verduijn J; Vinet M; Rogge S, 2014, 'Radio-frequency dispersive detection of donor atoms in a field-effect transistor', Applied Physics Letters, 104, pp. 102107-1 - 102107-4, http://dx.doi.org/10.1063/1.4868423

Tettamanzi GC; Wacquez R; Rogge S, 2014, 'Charge pumping through a single donor atom', New Journal of Physics, 16, pp. 063036, http://dx.doi.org/10.1088/1367-2630/16/6/063036

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941

Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2013, 'Silicon Quantum Electronics', Reviews of Modern Physics, 85, pp. 961 - 1019, http://dx.doi.org/10.1103/RevModPhys.85.961

Rogge S; Sellars MJ, 2013, 'Quantum computing: Atomic clocks in the solid state', Nature Nanotechnology, 8, pp. 544 - 545, http://dx.doi.org/10.1038/nnano.2013.152

Tettamanzi G, 2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, 110, pp. 49901 - 049901, http://dx.doi.org/10.1103/PhysRevLett.110.049901

Simmons MY; Miwa JA; Rogge S; Mol J; Salfi J, 2013, 'Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants', Physical Review B, 87, pp. 245417, http://arxiv.org/abs/1303.2712

Agundez RR; Verduijn J; Rogge S; Blaauboer M, 2013, 'Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system', Physical Review B, 87, pp. Article number235407, http://dx.doi.org/10.1103/PhysRevB.87.235407

Collini E; Levine RD; Remacle F; Rogge S; Willner I, 2013, 'Multi project: Multi-valued and parallel molecular logic', International Journal of Unconventional Computing, 8, pp. 307 - 312

Verduijn A; Agundez RR; Blaauboer M; Rogge S, 2013, 'Non-local coupling of two donor-bound electrons', New Journal of Physics, 15, http://dx.doi.org/10.1088/1367-2630/15/3/033020

Yin CM; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, 'Optical addressing of an individual erbium ion in silicon', Nature, 497, pp. 91 - 94, http://dx.doi.org/10.1038/nature12081

Simmons MY; Miwa JA; Mol J; Rogge S; Salfi J, 2013, 'Transport through a single donor in p-type silicon', Applied Physics Letters, 103, pp. 043106, http://dx.doi.org/10.1063/1.4816439

Verduijn A; Tettamanzi G; Rogge S, 2013, 'Wave function control over a single donor atom', Nano Letters, 14, pp. 1476 - 1480, http://dx.doi.org/10.1021/nl304518v

Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn JA; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, 'Few electron limit of n-type metal oxide semiconductor single electron transistors', Nanotechnology, 23, pp. 215204-1 - 215204-5, http://dx.doi.org/10.1088/0957-4484/23/21/215204

Paul A; Tettamanzi G; Lee S; Mehrotra SR; Collaert N; Biesemans S; Rogge S; Klimeck , 2012, 'Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs', Journal of Applied Physics, 110, pp. 124507 - 124516, http://dx.doi.org/10.1063/1.3660697

Tettamanzi G; Verduijn JA; Lansbergen G; Blaauboer M; Calderon M; Aquado R; Rogge S, 2012, 'Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor', Physical Review Letters, 108, pp. 46803 - 046807, http://dx.doi.org/10.1103/PhysRevLett.108.046803

Fresch B; Verduijn A; Mol J; Rogge S; Remacle F, 2012, 'Querying a quasi-classical Oracle: One-bit function identification problem implemented in a single atom transistor', Europhysics Letters, 99, pp. 28004-1 - 28004-6, http://dx.doi.org/10.1209/0295-5075/99/28004

Tung BT; Nguyen HM; Dao DV; Rogge S; Salemink HWM; Sugiyama S, 2011, 'Strain sensitive effect in a triangular lattice photonic crystal hole-modified nanocavity', IEEE Sensors Journal, 11, pp. 2657 - 2663, http://dx.doi.org/10.1109/JSEN.2011.2157122

Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.239904

Jehl X; Roche B; Sanquer M; Voisin B; Wacquez R; Deshpande V; Previtali B; Vinet M; Verduijn J; Tettamanzi GC; Rogge S; Kotekar-Patil D; Ruoff M; Kern D; Wharam DA; Belli M; Prati E; Fanciulli M, 2011, 'Mass production of silicon MOS-SETs: Can we live with nano-devices' variability?', Procedia Computer Science, 7, pp. 266 - 268, http://dx.doi.org/10.1016/j.procs.2011.09.016

Mol J; Van der heijden J; Verduijn JA; Klein M; Remacle F; Rogge S, 2011, 'Balanced ternary addition using a gated silicon nanowire', Applied Physics Letters, 99, pp. 263109-1 - 263109-3, http://dx.doi.org/10.1063/1.3669536

Rahman ; Lansbergen ; Verduijn A; Tettamanzi G; Park ; Collaert ; Biesemans ; Klimeck ; Hollenberg ; Rogge S, 2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, 84, pp. 115458-1 - 115458-7, http://dx.doi.org/10.1103/PhysRevB.84.115428

Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323

Mol J; Verduijn A; Levine RD; Remacle F; Rogge S, 2011, 'Integrated logic circuits using single-atom transistors', Proceedings of the National Academy of Sciences of the United States of America, 108, pp. 13969 - 13972, http://dx.doi.org/10.1073/pnas.1109935108

Tettamanzi G; Paul A; Lee SH; Mehrotra S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2011, 'Interface trap density metrology of state-of-the-art undoped Si n-FinFETs', IEEE Electron Device Letters, 32, pp. 440 - 442, http://dx.doi.org/10.1109/LED.2011.2106150

Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602

Gasseller M; Deninno M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH, 2011, 'Single-electron capacitance spectroscopy of individual dopants in silicon', Nano Letters, 11, pp. 5208 - 5212, http://dx.doi.org/10.1021/nl2025163

Tettamanzi GC; Lansbergen GP; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'A novel Kondo effect in single atom transistors', ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, pp. 319 - 321, http://dx.doi.org/10.1109/ICONN.2010.6045240

Nguyen HM; Dundar MA; van der Heijden RW; van der Drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact mach-zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics InfoBase Conference Papers

Tung BT; Dao DV; Susumu S; Nguyen HM; Rogge S; Salemink HWM, 2010, 'Strain sensitivity of a modified single-defect photonic crystal nanocavity for mechanical sensing', Proceedings of IEEE Sensors, pp. 2585 - 2588, http://dx.doi.org/10.1109/ICSENS.2010.5690169

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