Select Publications

Journal articles

Johnson BC; Alves A; Van Donkelaar J; Thompson S; Yang C; Jamieson D; Verduijn A; Mol J; Tettamanzi G; Rogge S; Wacquez R; Vinet M; Dzurak A, 2010, 'Single Dopant Implantation into a Nanoscale MOSFET Devices', ECS Meeting Abstracts, MA2010-02, pp. 1570 - 1570, http://dx.doi.org/10.1149/ma2010-02/23/1570

Mol JA; Beentjes SPC; Rogge S, 2010, 'A low temperature surface preparation method for STM nano-lithography on Si(100)', Applied Surface Science, 256, pp. 5042 - 5045, http://dx.doi.org/10.1016/j.apsusc.2010.03.052

Verduijn J; Tettamanzi G; Lansbergen G; Collaert N; Biesemans S; Rogge S, 2010, 'Coherent transport through a double donor system in silicon', Applied Physics Letters, 96, pp. 072110-1 - 072110-3, http://dx.doi.org/10.1063/1.3318271

Nguyen HM; Dundar MA; Van der heijden RW; Van der drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact Mach-Zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics Express, 18, pp. 6437 - 6446, http://dx.doi.org/10.1364/OE.18.006437

Johnson BC; Tettamanzi G; Alves A; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, 'Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation', Applied Physics Letters, 96, pp. 264102-1 - 264102-3, http://dx.doi.org/10.1063/1.3458783

Yan Y; Mol JA; Verduijn J; Rogge S; Levine RD; Remacle F, 2010, 'Electrically addressing a molecule-like donor pair in silicon: An atomic scale cyclable full Adder logic', Journal of Physical Chemistry C, 114, pp. 20380 - 20386, http://dx.doi.org/10.1021/jp103524d

Calderon M; Verduijn J; Lansbergen G; Tettamanzi G; Rogge S; Koiller B, 2010, 'Heterointerface effects on the charging energy of the shallow D− ground state in silicon: Role of dielectric mismatch', Physical Review - Section B - Condensed Matter, 82, pp. 075317-1 - 075317-7, http://dx.doi.org/10.1103/PhysRevB.82.075317

Rogge S, 2010, 'Nanoelectronics: Single dopants learn their place', Nature Nanotechnology, 5, pp. 100 - 101, http://dx.doi.org/10.1038/nnano.2010.11

Tettamanzi G; Lansbergen G; Paul A; Lee S; Deosarran P; Collaert N; Biesemans S; Rogge S, 2010, 'Sub-threshold study of undoped trigate nFinFET', Thin Solid Films, 518, pp. 2521 - 2523, http://dx.doi.org/10.1016/j.tsf.2009.10.114

Klein M; Mol JA; Verduijn J; Lansbergen G; Rogge S; Levine RD; Remacle F, 2010, 'Ternary logic implemented on a single dopant atom field effect silicon transistor', Applied Physics Letters, 96, pp. 043107, http://dx.doi.org/10.1063/1.3297906

Tettamanzi G; Paul A; Lansbergen G; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Thermionic emission as a tool to study transport in undoped nFinFETs', IEEE Electron Device Letters, 31, pp. 150 - 152, http://dx.doi.org/10.1109/LED.2009.2036134

Lansbergen G; Tettamanzi G; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'Tunable Kondo effect in a single donor atom', Nano Letters, 10, pp. 455 - 460, http://dx.doi.org/10.1021/nl9031132

Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; van den Brink J, 2009, 'Evidence for the formation of a Mott state in potassium-intercalated pentacene', Physical Review - Section B - Condensed Matter, 79, pp. 125116-1 - 125116-8, http://dx.doi.org/10.1103/PhysRevB.79.125116

Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301

Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314

Klein M; Lansbergen G; Mol JA; Rogge S; Levine RD; Remacle F, 2009, 'Reconfigurable Logic Devices on a Single Dopant Atom—Operation up to a Full Adder by Using Electrical Spectroscopy', Chemphyschem, 10, pp. 162 - 173, http://dx.doi.org/10.1002/cphc.200800568

Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07

Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03

Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', Optics InfoBase Conference Papers

Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994

Caro J; Roeling E; Rong B; Nguyen HM; Van der drift EWJM; Rogge S; Karouta F; Van der heijden RW; Salemink HWM, 2008, 'Transmission measurement of the photonic band gap of GaN photonic crystal slabs', Applied Physics Letters, 93, pp. 051117-1 - 051117-3, http://dx.doi.org/10.1063/1.2967744

Snijders P; Moon E; Gonzalez C; Rogge S; Ortega J; Flores F; Weitering H, 2007, 'Controlled self-organization of atom vacancies in monatomic gallium layers', Physical Review Letters, 99, pp. 116102-1 - 116102-4, http://dx.doi.org/10.1103/PhysRevLett.99.116102

Sellier H; Lansbergen G; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2007, 'Subthreshold channels at the edges of nanoscale triple-gate silicon transistors', Applied Physics Letters, 90, pp. 073502-1 - 073502-3, http://dx.doi.org/10.1063/1.2476343

Klein M; Rogge S; Remacle F; Levine RD, 2007, 'Transcending binary logic by gating three coupled quantum dots', Nano Letters, 7, pp. 2795 - 2799, http://dx.doi.org/10.1021/nl071376e

Lansbergen GP; Sellier H; Collaert N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 351 - 354, http://dx.doi.org/10.1109/ICONN.2006.340624

Sellier H; Lansbergen GP; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2006, 'Transport spectroscopy of a single dopant in a gated silicon nanowire', Physical Review Letters, 97, http://dx.doi.org/10.1103/PhysRevLett.97.206805

Snijders PC; Rogge S; Weitering HH, 2006, 'Density waves in atomic necklaces', Europhysics News, 37, pp. 27 - 30, http://dx.doi.org/10.1051/epn:2006506

Morpurgo A; Craciun M; Rogge S; Iwasa Y, 2006, 'Alkali-doped Metal-phthalocyanines: Electronic Properties and Structure', ECS Meeting Abstracts, MA2005-01, pp. 922 - 922, http://dx.doi.org/10.1149/ma2005-01/25/922

Craciun MF; Rogge S; den Boer ML; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Inside Front Cover: Electronic Transport through Electron‐Doped Metal Phthalocyanine Materials (Adv. Mater. 3/2006)', Advanced Materials, 18, http://dx.doi.org/10.1002/adma.200690014

Snijders P; Rogge S; Weitering H, 2006, 'Competing periodicities in fractionally filled one-dimensional bands', Physical Review Letters, 96, pp. 076801-1 - 076801-4, http://dx.doi.org/10.1103/PhysRevLett.96.076801

Craciun MF; Rogge S; den Boer M-JL; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Electronic Transport through Electron-Doped Metal Phthalocyanine Materials', Advanced Materials, 18, pp. 320 - 324, http://dx.doi.org/10.1002/adma.200501268

Margadonna S; Prassides K; Iwasa Y; Taguchi Y; Craciun MF; Rogge S; Morpurgo AF, 2006, 'Potassium Phthalocyanine, KPc: One-Dimensional Molecular Stacks Bridged by K+ Ions', Inorganic Chemistry, 45, pp. 10472 - 10478, http://dx.doi.org/10.1021/ic060727

de Boer R; Stassen A; Craciun MF; Mulder C; Molinari A; Rogge S; Morpurgo AF, 2005, 'Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors', Applied Physics Letters, 86, pp. 262109-1 - 262109-3, http://dx.doi.org/10.1063/1.1984093

Craciun MF; Rogge S; Morpurgo AF, 2005, 'Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped metal-phthalocyanine compounds', Journal of the American Chemical Society, 127, pp. 12210 - 12211, http://dx.doi.org/10.1021/ja054468j

Rogge S; Snijders P; Gonzalez C; Paul S; Ortega J; Flores F; Weitering H, 2005, 'Ga-induced atom wire formation and passivation of stepped Si(112)', Physical Review - Section B - Condensed Matter, 72, pp. 125343-1 - 125343-12, http://dx.doi.org/10.1103/PhysRevB.72.125343

Craciun MF; Rogge S; den Boer M-JL; Klapwijk T; Morpurgo AF, 2004, 'Electron transport and tunnelling spectroscopy in alkali doped metal phthalocyanines', Journal de Physique Iv, 114, pp. 607 - 610, http://dx.doi.org/10.1051/jp4:2004114144

Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics', Physical Review - Section B - Condensed Matter, 69, pp. 035338-1 - 035338-5, http://dx.doi.org/10.1103/PhysRevB.69.035338

Caro J; Vink I; Smit G; Rogge S; Klapwijk T; Loo R; Caymax M, 2004, 'Direct observation by resonant tunneling of the B+ level in a delta-doped silicon barrier', Physical Review - Section B - Condensed Matter, 69, pp. 125324-1 - 125324-5, http://dx.doi.org/10.1103/PhysRevB.69.125324

Gonzalez C; Snijders P; Ortega J; Perez R; Flores F; Rogge S; Weitering H, 2004, 'Formation of atom wires on vicinal silicon', Physical Review Letters, 93, pp. 126106-1 - 126106-4, http://dx.doi.org/10.1103/PhysRevLett.93.126106

Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Group-theoretical analysis of double acceptors in a magnetic field: Identification of the Si : B+ ground state', Physical Review - Section B - Condensed Matter, 69, pp. 085211-1 - 085211-7, http://dx.doi.org/10.1103/PhysRevB.69.085211

Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Stark effect in shallow impurities in Si', Physical Review - Section B - Condensed Matter, 70, pp. 035206-1 - 035206-10, http://dx.doi.org/10.1103/PhysRevB.70.035206

Rogge S; Durkut M; Klapwijk TM, 2003, 'Single domain transport measurements of C-60 films', PHYSICAL REVIEW B, 67, http://dx.doi.org/10.1103/PhysRevB67.033410

Smit G; Rogge S; Caro J; Klapwijk T, 2003, 'Gate-induced ionization of single dopant atoms', Physical Review - Section B - Condensed Matter, 68, pp. 193302-1 - 193302-4, http://dx.doi.org/10.1103/PhysRevB.68.193302

Snijders PC, 2003, 'New Structural Model of the Si(112)6 × 1-Ga Interface', AIP Conference Proceedings, http://dx.doi.org/10.1063/1.1639773

Craciun MF, 2003, 'Scanning Tunnelling Microscopy and Spectroscopy on Alkali Doped Copper Phthalocyanine', AIP Conference Proceedings, http://dx.doi.org/10.1063/1.1639741

Rogge S; Durkut M; Klapwijk T, 2003, 'Single domain transport measurements of C-60 films', Physical Review - Section B - Condensed Matter, 67, pp. 033410-1 - 033410-4, http://dx.doi.org/10.1103/PhysRevB.67.033410

Smit G; Rogge S; Klapwijk T, 2002, 'Enhanced tunneling across nanometer-scale metal-semiconductor interfaces', Applied Physics Letters, 80, pp. 2568 - 2570, http://dx.doi.org/10.1063/1.1467980

Smit G; Flokstra M; Rogge S; Klapwijk T, 2002, 'Scaling of micro-fabricated nanometer-sized Schottky diodes', Microelectronic Engineering, 64, pp. 429 - 433, http://dx.doi.org/10.1016/S0167-9317(02)00817-1

Smit G; Rogge S; Klapwijk T, 2002, 'Scaling of nano-Schottky-diodes', Applied Physics Letters, 81, pp. 3852 - 3854, http://dx.doi.org/10.1063/1.1521251

Rogge S; Timmerman R; Scholte P; Geerligs L; Salemink HWM, 2001, 'Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001)', Journal of Vacuum Science and Technology B, 19, pp. 659 - 665, http://dx.doi.org/10.1116/1.1372925


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