By Associate Professor Stephen Bremner

Journal articles

Green MA; Bremner SP, 2016, 'Energy conversion approaches and materials for high-efficiency photovoltaics', Nature Materials, 16, pp. 23 - 34, http://dx.doi.org/10.1038/nmat4676

Ban KY; Kim Y; Kuciauskas D; Bremner SP; Honsberg CB, 2016, 'Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels', Semiconductor Science and Technology, 31, http://dx.doi.org/10.1088/0268-1242/31/12/125010

Bremner SP; Yi C; Almansouri I; Ho-Baillie A; Green MA, 2016, 'Optimum band gap combinations to make best use of new photovoltaic materials', Solar Energy, 135, pp. 750 - 757, http://dx.doi.org/10.1016/j.solener.2016.06.042

Zhang Y; Tayebjee MJY; Smyth S; Dvořák M; Wen X; Xia H; Heilmann M; Liao Y; Zhang Z; Williamson T; Williams J; Bremner S; Shrestha S; Huang S; Schmidt TW; Conibeer GJ; Dvorak M, 2016, 'Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation', Applied Physics Letters, 108, pp. 131904, http://dx.doi.org/10.1063/1.4945594

Smyth T; Dvorak M; Tayebjee MJY; Yasarapudi VB; Xia H; Feng Y; Wang Y; Puthen-Veettil B; Huang S; Shrestha S; Bremner SP; Schmidt TW; Sugiyama M; Conibeer GJ, 2016, 'Hot carrier cooling in In0.17Ga0.83As/GaAs0.80P0.20 multiple quantum wells: The effect of barrier thickness', IEEE Journal of Photovoltaics, 6, pp. 166 - 171, http://dx.doi.org/10.1109/JPHOTOV.2015.2480222

Dai L; Bremner SP; Tan S; Wang S; Zhang G; Liu Z, 2015, 'Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems', Nanoscale Research Letters, 10, http://dx.doi.org/10.1186/s11671-015-0908-1

Limpert S; Bremner S; Linke H, 2015, 'Reversible electron-hole separation in a hot carrier solar cell', New Journal of Physics, 17, http://dx.doi.org/10.1088/1367-2630/17/9/095004

Limpert SC; Bremner SP, 2015, 'Hot carrier extraction using energy selective contacts and its impact on the limiting efficiency of a hot carrier solar cell', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4928750

Western NJ; Perez-Wurfl I; Wenham SR; Bremner SP, 2015, 'Point-contacting by localised dielectric breakdown: Characterisation of a metallisation technique for the rear surface of a solar cell', Journal of Applied Physics, 118, http://dx.doi.org/10.1063/1.4927282

Western NJ; Perez-Wurfl I; Wenham SR; Bremner SP, 2015, 'Point-contacting by localized dielectric breakdown with breakdown fields described by the weibull distribution', IEEE Transactions on Electron Devices, 62, pp. 1826 - 1830, http://dx.doi.org/10.1109/TED.2015.2423292

Almansouri I; Ho-Baillie A; Bremner SP; Green MA, 2015, 'Supercharging Silicon Solar Cell Performance by Means of Multijunction Concept', IEEE Journal of Photovoltaics, 5, pp. 968 - 976, http://dx.doi.org/10.1109/JPHOTOV.2015.2395140

Almansouri I; Bremner S; Ho-Baillie A; Mehrvarz H; Hao X; Conibeer G; Grassman TJ; Carlin JA; Haas A; Ringel SA; Green MA, 2015, 'Designing bottom silicon solar cells for multijunction devices', IEEE Journal of Photovoltaics, 5, pp. 683 - 690, http://dx.doi.org/10.1109/JPHOTOV.2014.2381875

Dai L; Bremner SP; Tan S; Wang S; Zhang G; Liu Z, 2014, 'Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots', Nanoscale Research Letters, 9, pp. 1 - 5, http://dx.doi.org/10.1186/1556-276X-9-278

Bremner SP; Ban KY; Faleev NN; Honsberg CB; Smith DJ, 2013, 'Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)', Journal of Applied Physics, 114, http://dx.doi.org/10.1063/1.4819962

Western NJ; Sung AY; Wenham SR; Bremner S, 2013, 'Localized ohmic contact through a passivation dielectric for solar cell rear surface design', Applied Physics Letters, 102, pp. 4 pp., http://dx.doi.org/10.1063/1.4809820

Bray T; Zhao Y; Reece PJ; Bremner S, 2013, 'Photoluminescence of antimony sprayed indium arsenide quantum dots for novel photovoltaic devices', Journal of Applied Physics, 113, pp. 093102-1 - 093102-7, http://dx.doi.org/10.1063/1.4794018

Ikpi ME; Atkinson P; Bremner SP; Ritchie DA, 2012, 'Fabrication of a self-aligned cross-wire quantum-dot chain light emitting diode by molecular beam epitaxial regrowth', Nanotechnology, 23

Ban KY; Kuciauskas D; Honsberg CB; Bremner S, 2012, 'Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence', Journal of Applied Physics, 111

Ban KY; Hong WK; Bremner S; Dahal S; McFelea H; Honsberg CB, 2011, 'Controllability of the subband occupation of InAs quantum dots on a delta-doped GaAsSb barrier', Journal of Applied Physics, 109, pp. 014312

Bremner S; Nataraj L; Cloutier SG; Weiland C; Pancholi A; Opila R, 2011, 'Use of Sb spray for improved performance of InAs/GaAs quantum dots for novel photovoltaic structures', Solar Energy Materials and Solar Cells

Dahal S; Bremner S; Honsberg CB, 2010, 'Identification of candidate material systems for quantum dot solar cells using a k.p method to include strain', Progress in Photovoltaics: Research and Applications, 18, pp. 233 - 239

Bremner S; Ghosh K; Nataraj L; Cloutier SG; Honsberg CB, 2010, 'Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces', Thin Solid Films, 519, pp. 64 - 68, http://dx.doi.org/10.1016/j.tsf.2010.07.060

Ban KY; Bremner S; Liu G; Dahal S; Norman A; Honsberg CB, 2010, 'Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots', Applied Physics Letters, 96, pp. 183101

Pancholi A; Bremner S; Boyle J; Stoleru V; Honsberg CB, 2010, 'Variability of heterostructure type with thickness of barriers and temperature in the InhAs/GaAsSb quantum dot system', Solar Energy Materials and Solar Cells, 94, pp. 1025 - 1030

Ikpi ME; Atkinson P; Bremner SP; Ritchie DA, 2009, 'The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution', Journal of Crystal Growth, 311, pp. 3911 - 3917, http://dx.doi.org/10.1016/j.jcrysgro.2009.04.031

Atkinson P; Schmidt OG; Bremner SP; Ritchie DA, 2008, 'Formation and ordering of epitaxial quantum dots', Comptes Rendus Physique, 9, pp. 788 - 803, http://dx.doi.org/10.1016/j.crhy.2008.10.014

Bremner SP; Liu GM; Faleev N; Ghosh K; Honsberg CB, 2008, 'Growth and characterization of Ga As1-x Sbx barrier layers for advanced concept solar cells', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26, pp. 1149 - 1152, http://dx.doi.org/10.1116/1.2835062

Bremner SP; Levy MY; Honsberg CB, 2008, 'Limiting efficiency of an intermediate band solar cell under a terrestrial spectrum', Applied Physics Letters, 92, http://dx.doi.org/10.1063/1.2907493

Bremner SP; Levy MY; Honsberg CB, 2008, 'Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method', Progress in Photovoltaics: Research and Applications, 16, pp. 225 - 233, http://dx.doi.org/10.1002/pip.799

Gell JR; Ward MB; Atkinson P; Bremner SP; Anderson D; Norman CE; Kataoka M; Barnes CHW; Jones GAC; Shields AJ; Ritchie DA, 2008, 'Temporal isolation of surface-acoustic-wave-driven luminescence from a lateral p-n junction using pulsed techniques', Physica E: Low-Dimensional Systems and Nanostructures, 40, pp. 1775 - 1779, http://dx.doi.org/10.1016/j.physe.2007.09.140

Gell JR; Ward MB; Shields AJ; Atkinson P; Bremner SP; Anderson D; Kataoka M; Barnes CHW; Jones GAC; Ritchie DA, 2007, 'Temporal characteristics of surface-acoustic-wave-driven luminescence from a lateral p-n junction', Applied Physics Letters, 91, http://dx.doi.org/10.1063/1.2753759

Gell JR; Atkinson P; Bremner SP; Sfigakis F; Kataoka M; Anderson D; Jones GAC; Barnes CHW; Ritchie DA; Ward MB; Norman CE; Shields AJ, 2006, 'Surface-acoustic-wave-driven luminescence from a lateral p-n junction', Applied Physics Letters, 89, http://dx.doi.org/10.1063/1.2405419

Gevaux DG; Atkinson P; Anderson D; Bennett AJ; Bremner SP; Griffiths J; Ellis DJP; Stevenson RM; Jones GAC; Ritchie DA; Shields AJ, 2006, 'Controlling spontaneous emission from quantum dots using photonic crystal microcavities', Physica Status Solidi (C) Current Topics in Solid State Physics, 3, pp. 3676 - 3679, http://dx.doi.org/10.1002/pssc.200671514

Atkinson P; Bremner SP; Anderson D; Jones GAC; Ritchie DA, 2006, 'Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates', Microelectronics Journal, 37, pp. 1436 - 1439, http://dx.doi.org/10.1016/j.mejo.2006.05.003

Atkinson P; Ward MB; Bremner SP; Anderson D; Farrow T; Jones GAC; Shields AJ; Ritchie DA, 2006, 'Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates', Physica E: Low-Dimensional Systems and Nanostructures, 32, pp. 21 - 24, http://dx.doi.org/10.1016/j.physe.2005.12.007

Atkinson P; Bremner SP; Anderson D; Jones GAC; Ritchie DA, 2006, 'Size evolution of site-controlled InAs quantum dots grown by molecular beam epitaxy on prepatterned GaAs substrates', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24, pp. 1523 - 1526, http://dx.doi.org/10.1116/1.2190674

Atkinson P; Ward MB; Bremner SP; Anderson D; Farrow T; Jones GAC; Shields AJ; Ritchie DA, 2006, 'Site-control of InAs quantum dots using Ex-situ electron-beam lithographic patterning of GaAs substrates', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45, pp. 2519 - 2521, http://dx.doi.org/10.1143/JJAP.45.2519

Ikpi ME; Atkinson P; Bremner SP; Ritchie DA, 2005, 'Distribution of self-assembled InAs dots on patterned GaAs (1 0 0) substrates', Journal of Crystal Growth, 278, pp. 113 - 118, http://dx.doi.org/10.1016/j.jcrysgro.2004.12.178

Honsberg C; Bremner S; Corkish RP, 2002, 'Design Trade-Offs and Rules for Multiple Quasi-Fermi Level Solar Cells', Physica E - Low - Dimensional Systems and Nanostructures, 14, pp. 136 - 141

Nishino SF; Spain JC, 2001, 'Technology Status Review: Bioremediation of Dinitrotoluene (DNT)', , http://dx.doi.org/10.21236/ada480579

Bremner S; Cotter JE; Honsberg C, 1999, 'Detailed balance limits with quasi-Fermi level variations', IEEE Transactions on Electron Devices, pp. 1932 - 1939

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