By Associate Professor Fiacre Rougieux

Conference Papers

Rougieux FE; Thiboust M; Grant N; Tan J; Macdonald D; Cuevas A, 2011, 'Contactless Determination of the Injection Dependent Carrier Mobility Sum in Silicon', Institute of Electrical and Electronics Engineers (IEEE), pp. 002928 - 002928, presented at 2011 37th IEEE Photovoltaic Specialists Conference, http://dx.doi.org/10.1109/pvsc.2011.6186558

Rougieux FE; Macdonald ID; Cuevas A; Lim B; Schmidt J, 2011, 'Formation Kinetics and Extent of the Boron Oxygen Defect in Compensated n- Type Silicon', Institute of Electrical and Electronics Engineers (IEEE), pp. 003424 - 003424, presented at 2011 37th IEEE Photovoltaic Specialists Conference, http://dx.doi.org/10.1109/pvsc.2011.6186682

Lim B; Rougieux F; MacDonald D; Bothe K; Schmidt J, 2010, 'Generation and annihilation of boron-oxygen-related recombination centers in compensated p - And n -type silicon', in Journal of Applied Physics, http://dx.doi.org/10.1063/1.3511741

Lim B; Liu A; Rougieux F; Macdonald D; Bothe K; Schmidt J, 2010, 'Boron-Oxygen-Related Recombination Centers in Compensated Silicon', WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010

Rougieux F; Macdonald D; Cuevas A; Ruffel S; Schmidt J; Lim B, 2010, 'Electron and hole mobility reduction and Hall Factor in compensated p-type silicon', WIP-Renewable Energies, Munich, Germany, Valenci, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valenci, 06 September 2010 - 10 September 2010

Tan J; Macdonald D; Rougieux F; Cuevas A, 2010, 'revised equation for the formation rate of iron-boron pairs in silicon', WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010

Macdonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Boron-oxygen defects in compensated p-type Czochralski silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009

Rougieux F; Macdonald D; McIntosh K; Cuevas A, 2009, 'Oxidation-induced inversion layer in compensated p-type silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009

Back to profile page