By Professor Brett Jason Hallam

Journal articles

Nampalli N; Hallam B; Chan C; Abbott M; Wenham S, 2015, 'Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon', Applied Physics Letters, 106, pp. 173501, http://dx.doi.org/10.1063/1.4919385

Hamer P; Wang S; Hallam B; Wenham S; Chong CM; Wenham A; Abbott M, 2015, 'Laser illumination for manipulation of hydrogen charge states in silicon solar cells', Physica Status Solidi Rapid Research Letters, 9, pp. 111 - 114, http://dx.doi.org/10.1002/pssr.201409495

Cornagliotti E; Uruena A; Hallam B; Tous L; Russell R; Duerinckx F; Szlufcik J, 2015, 'Large area p-type PERL cells featuring local p+ BSF formed by laser processing of ALD Al2O3 layers', Solar Energy Materials and Solar Cells, 138, pp. 72 - 79, http://dx.doi.org/10.1016/j.solmat.2015.02.034

Song L; Wenham A; Wang S; Hamer P; Ahmmed MS; Hallam B; Mai L; Abbott M; Hawkes ER; Chong C; Wenham S, 2015, 'Laser enhanced hydrogen passivation of silicon wafers', International Journal of Photoenergy, 2015, pp. 1 - 13, http://dx.doi.org/10.1155/2015/193892

Chan C; Abbott M; Hallam B; Juhl M; Lin D; Li Z; Li Y; Rodriguez J; Wenham S, 2015, 'Edge isolation of solar cells using laser doping', Solar Energy Materials and Solar Cells, 132, pp. 535 - 543, http://dx.doi.org/10.1016/j.solmat.2014.10.002

Hallam B; Tjahjono B; Trupke T; Wenham S, 2014, 'Erratum: Photoluminescence imaging for determining the spatially resolved implied open circuit voltage of silicon solar cells (Journal of Applied Physics (2014) 115 (044901))', Journal of Applied Physics, 115, http://dx.doi.org/10.1063/1.4884755

Hallam B; Augarten Y; Tjahjono B; Trupke T; Wenham S, 2014, 'Photoluminescence imaging for determining the spatially resolved implied open circuit voltage of silicon solar cells', Journal of Applied Physics, 115, http://dx.doi.org/10.1063/1.4862957

Hallam BJ; Hamer PG; Wenham SR; Abbott MD; Sugianto A; Wenham AM; Chan CE; Xu G; Kraiem J; Degoulange J; Einhaus R, 2014, 'Advanced bulk defect passivation for silicon solar cells', IEEE Journal of Photovoltaics, 4, pp. 88 - 95, http://dx.doi.org/10.1109/JPHOTOV.2013.2281732

Hallam B; Sugianto A; Mai L; Xu G; Chan C; Abbott M; Wenham S; Uruena A; Cornagliotti E; Aleman M, 2014, 'Hydrogen passivation of laser-induced defects for laser-doped silicon solar cells', IEEE Journal of Photovoltaics, 4, pp. 1413 - 1420, http://dx.doi.org/10.1109/JPHOTOV.2014.2347804

Lin D; Abbott M; Lu PH; Xiao B; Hallam B; Tjahjono B; Wenham S, 2014, 'Incorporation of deep laser doping to form the rear localized back surface field in high efficiency solar cells', Solar Energy Materials and Solar Cells, 130, pp. 83 - 90, http://dx.doi.org/10.1016/j.solmat.2014.06.037

Hamer P; Hallam B; Wenham S; Abbott M, 2014, 'Manipulation of hydrogen charge states for passivation of P-type wafers in photovoltaics', IEEE Journal of Photovoltaics, 4, pp. 1252 - 1260, http://dx.doi.org/10.1109/JPHOTOV.2014.2339494

Chan CE; Abbott MD; Juhl MK; Hallam BJ; Xiao B; Wenham SR, 2013, 'Assessing the Performance of Surface Passivation Using Low-Intensity Photoluminescence Characterization Techniques', IEEE Journal of Photovoltaics, pp. 1 - 7, http://dx.doi.org/10.1109/JPHOTOV.2013.2282739

Hallam B; Wenham S; Lee H; Lee E; Lee H; Kim J; Shin J; Cho K; Kim J, 2012, 'Record Efficiency on Large Area P-Type Czochralski Silicon Substrates', Japanese Journal of Applied Physics, 51, pp. 10na08, http://dx.doi.org/10.7567/jjap.51.10na08

Hallam B; Wenham S; Lee H; Lee E; Lee H; Kim J; Shin J, 2012, 'Erratum: Effect of edge junction isolation on the performance of laser doped selective emitter solar cells (Solar Energy Materials & Solar Cells (2011) 95 (3557-3563))', Solar Energy Materials and Solar Cells, 99, pp. 365, http://dx.doi.org/10.1016/j.solmat.2011.12.017

Wang Z; Han P; Lu H; Qian H; Chen L; Meng Q; Tang N; Gao F; Jiang Y; Wu J; Wu W; Zhu H; Jingjia J; Shi Z; Sugianto A; Mai L; Hallam B; Wenham SR, 2012, 'Advanced PERC and PERL production cells with 20.3% record efficiency for standard commercial p-type silicon wafers', Progress in Photovoltaics: Research and Applications, 20, pp. 260 - 268, http://dx.doi.org/10.1002/pip.2178

Hallam B; Tjahjono BS; Wenham SR, 2012, 'Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers', Solar Energy Materials and Solar Cells, 96, pp. 173 - 179, http://dx.doi.org/10.1016/j.solmat.2011.09.052

Hallam B; Wenham SR; Lee H; Lee E; Lee H; Kim KJ; Shin J; Cho K; Kim J, 2012, 'Record Efficiency on Large Area P-Type Czochralski Silicon Substrates', Japanese Journal of Applied Physics, 51, pp. 10NA08, http://dx.doi.org/10.1143/JJAP.51.10NA08

Lee E; Lee H; Choi CJ; Oh D; Shim J; Cho K; Kim KJ; Lee S; Hallam B; Wenham SR; Lee H, 2011, 'Improved LDSE processing for the avoidance of overplating yielding 19.2% efficiency on commercial grade crystalline Si solar cell', Solar Energy Materials and Solar Cells, 95, pp. 3592 - 3595, http://dx.doi.org/10.1016/j.solmat.2011.07.030

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