ORCID as entered in ROS
https://orcid.org/0000-0002-9879-1554
Select Publications
Journal articles
, 2016, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', Physica Status Solidi A Applications and Materials Science, 213, pp. 2844 - 2849, http://dx.doi.org/10.1002/pssa.201600360
, 2016, 'Reassessment of the recombination properties of aluminium–oxygen complexes in n- and p-type Czochralski-grown silicon', Physica Status Solidi B Basic Research, 253, pp. 2079 - 2084, http://dx.doi.org/10.1002/pssb.201600363
, 2016, 'Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon', Physica Status Solidi Rapid Research Letters, 10, pp. 443 - 447, http://dx.doi.org/10.1002/pssr.201600080
, 2016, 'High efficiency UMG silicon solar cells: Impact of compensation on cell parameters', Progress in Photovoltaics Research and Applications, 24, pp. 725 - 734, http://dx.doi.org/10.1002/pip.2729
, 2016, 'Upgraded metallurgical-grade silicon solar cells with efficiency above 20%', Applied Physics Letters, 108, http://dx.doi.org/10.1063/1.4944788
, 2016, 'Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy', Solar Energy Materials and Solar Cells, 145, pp. 403 - 411, http://dx.doi.org/10.1016/j.solmat.2015.11.006
, 2015, 'Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon', Journal of Applied Physics, 118, http://dx.doi.org/10.1063/1.4929757
, 2015, 'Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon', IEEE Journal of Photovoltaics, 5, pp. 799 - 804, http://dx.doi.org/10.1109/JPHOTOV.2015.2407158
, 2015, 'Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon', IEEE Journal of Photovoltaics, 5, pp. 495 - 498, http://dx.doi.org/10.1109/JPHOTOV.2014.2367912
, 2015, 'Grown-in defects limiting the bulk lifetime of p -type float-zone silicon wafers', Journal of Applied Physics, 117, http://dx.doi.org/10.1063/1.4907804
, 2015, 'A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon', Journal of Applied Physics, 117, http://dx.doi.org/10.1063/1.4906465
, 2015, 'Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon', IEEE Journal of Photovoltaics, 5, pp. 183 - 188, http://dx.doi.org/10.1109/JPHOTOV.2014.2366687
, 2015, 'Impact of carrier profile and rear-side reflection on photoluminescence spectra in planar crystalline silicon wafers at different temperatures', IEEE Journal of Photovoltaics, 5, pp. 77 - 81, http://dx.doi.org/10.1109/JPHOTOV.2014.2359737
, 2014, 'Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon', Journal of Applied Physics, 115, http://dx.doi.org/10.1063/1.4881497
, 2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4870002
, 2014, 'Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level', IEEE Journal of Photovoltaics, 4, pp. 560 - 565, http://dx.doi.org/10.1109/JPHOTOV.2013.2294755
, 2014, 'Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements', Applied Physics Letters, 104, pp. 073506, http://dx.doi.org/10.1063/1.4865804
, 2014, 'Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence', Journal of Applied Physics, 115, pp. 043710, http://dx.doi.org/10.1063/1.4862912
, 2014, 'Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells', Solar Energy Materials and Solar Cells, 120, pp. 390 - 395, http://dx.doi.org/10.1016/j.solmat.2013.06.014
, 2013, 'Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers', Physica Status Solidi Rapid Research Letters, 7, pp. 616 - 618, http://dx.doi.org/10.1002/pssr.201308053
, 2013, 'Boron-oxygen defect imaging in p-type Czochralski silicon', Applied Physics Letters, 103, http://dx.doi.org/10.1063/1.4819096
, 2013, 'Incomplete Ionization and Carrier Mobility in Compensated $p$-Type and $n$-Type Silicon', 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, pp. 1 - 6
, 2013, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', IEEE Journal of Photovoltaics, 3, pp. 108 - 113, http://dx.doi.org/10.1109/JPHOTOV.2012.2210032
, 2012, 'Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering', Semiconductor Science and Technology, 27, http://dx.doi.org/10.1088/0268-1242/27/12/125016
, 2012, 'Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon', Journal of Applied Physics, 111, http://dx.doi.org/10.1063/1.3686151
, 2012, 'Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron', Applied Physics Letters, 100, http://dx.doi.org/10.1063/1.3680205
, 2012, 'A contactless method for determining the carrier mobility sum in silicon wafers', IEEE Journal of Photovoltaics, 2, pp. 41 - 46, http://dx.doi.org/10.1109/JPHOTOV.2011.2175705
, 2011, 'Recombination activity and impact of the boron-oxygen-related defect in compensated N-type silicon', IEEE Journal of Photovoltaics, 1, pp. 54 - 58, http://dx.doi.org/10.1109/JPHOTOV.2011.2165698
, 2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, 110, http://dx.doi.org/10.1063/1.3633492
, 2011, 'Accurate measurement of the formation rate of iron-boron pairs in silicon', Semiconductor Science and Technology, 26, http://dx.doi.org/10.1088/0268-1242/26/5/055019
, 2010, 'Scanning X-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon', Physica Status Solidi A Applications and Materials Science, 207, pp. 1807 - 1810, http://dx.doi.org/10.1002/pssa.201026137
, 2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p -type silicon', Journal of Applied Physics, 108, http://dx.doi.org/10.1063/1.3456076
, 2010, 'Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon', Semiconductor Science and Technology, 25, http://dx.doi.org/10.1088/0268-1242/25/5/055009
, 2009, 'Light-induced boron-oxygen defect generation in compensated p -type Czochralski silicon', Journal of Applied Physics, 105, http://dx.doi.org/10.1063/1.3121208
Conference Papers
, 2024, 'Balancing Pinhole Density and Doping Depth in for High Quality P+ TOPCon Layers', in Proceedings of the Asia Pacific Solar Research Conference 2024, Australian PV Institute, Sydney, Australia, presented at
, 2024, 'The Impact of Oxygen Concentration on LID in Gallium Doped Wafers', in Sun C; Rougieux F (ed.), Proceedings of the Asia Pacific Solar Research Conference 2024, Australian PV Institute, Sydney, presented at
, 2024, 'Global analysis of valley photovoltaic devices demonstrates challenges of current designs', in 2024 IEEE 52ND PHOTOVOLTAIC SPECIALIST CONFERENCE, PVSC, IEEE, WA, Seattle, pp. 0494 - 0494, presented at
, 2024, 'Recombination Activity of Chromium-Gallium Pairs in Silicon', Institute of Electrical and Electronics Engineers (IEEE), pp. 504 - 504, presented at
, 2024, 'A Three-Step Approach to Shift from Assessment Integrity to Assurance of Learning in the Age of AI', in 2024 World Engineering Education Forum Global Engineering Deans Council Weef Gedc 2024, http://dx.doi.org/10.1109/WEEF-GEDC63419.2024.10854944
, 2023, 'Influence of light element incorporation on poly-Si/SiOX passivated contact', in Proceedings of the Asia Pacific Solar Research Conference 2023, Australian PV Institute, Melbourne，Australian, presented at
, 2023, 'Density functional theory to calculate accurate defect energy levels in silicon', in Aip Conference Proceedings, http://dx.doi.org/10.1063/5.0141286
, 2022, 'Deep Level Transient Spectroscopy Study of Float-zone Silicon Degradation under Light and Elevated Temperature', in Aip Conference Proceedings, http://dx.doi.org/10.1063/5.0089221
, 2021, 'Tuning the crystalline and optical properties of sputtered polysilicon carbide contacts', Sydney, Australia, presented at
, 2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 269 - 271, http://dx.doi.org/10.1109/PVSC43889.2021.9519027
, 2020, 'Boron-oxygen-related traps in Czochralski grown silicon', Online, presented at
, 2020, 'Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier trapping and recombination active centers', in Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), Virtual, pp. 0689 - 0692, presented at
, 2020, 'Defect luminescence from thermal donors in silicon: Impact of dopant type and thermal donor concentration', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2652 - 2654, http://dx.doi.org/10.1109/PVSC45281.2020.9300685
, 2020, 'The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2522 - 2524, http://dx.doi.org/10.1109/PVSC45281.2020.9300431
, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Canberra, presented at
, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at
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https://orcid.org/0000-0002-9879-1554