By Dr Andrew Dzurak

Patents

Dzurak A; Escott C; Pla J, 2025, Global control for quantum computing systems, Patent No. Japan - 7739282;

Dzurak A; Veldhorst M; Yang H, 2023, Advanced processing apparatus comprising a plurality of quantum processing elements, Patent No. Hong Kong - HK1248921; India - 479776; South Korea - 2574909

Dzurak A; Veldhorst M; Yang H, 2022, Advanced processing apparatus comprising a plurality of quantum processing elements, Patent No. Australia - 2016303798

Dzurak A; Veldhorst M; Yang H, 2022, Quantum processing device comprising a plurality of quantum processing elements, Patent No. China - ZL201680045977.2

Dzurak A; Veldhorst M; Yang H, 2022, Advanced processing apparatus, Patent No. Belgium, Denmark, Europe, Finland, France, Ireland, Netherlands, Norway, Sweden, Switzerland, United Kingdom - 3152153; Germany - 602014082262.2; Italy - 502022000024161; Spain - 300445988

Yang H; Dzurak A; Veldhorst M, 2020, Advanced processing apparatus comprising a plurality of quantum processing elements, Patent No. United States patent no. 10692924, Singapore 2021 pat no.11201800814T, Patent Agent:UNSW ref - 2015-055, https://worldwide.espacenet.com/publicationDetails/biblio?II=0&ND=3&adjacent=true&locale=en_EP&FT=D&date=20180809&CC=US&NR=2018226451A1&KC=A1

Morello A; Huebl H-G; Escott C; Jamieson D; Hollenberg L; van Beveren L; Clark R; Dzurak A, 2019, Control and Readout of Electron or Hole Spin, Patent No. 2248157

Dzurak A; Veldhorst M; Yang C-HH, 2018, Advanced processing apparatus, Patent No. US patent no. 9886668; China patent no. ZL201480079553.9, https://pdfpiw.uspto.gov/.piw?Docid=09886668&homeurl=http%3A%2F%2Fpatft.uspto.gov%2Fnetacgi%2Fnph-Parser%3FSect1%3DPTO1%2526Sect2%3DHITOFF%2526d%3DPALL%2526p%3D1%2526u%3D%25252Fnetahtml%25252FPTO%25252Fsrchnum.htm%2526r%3D1%2526f%3DG%2526l%3D50%2526s1%3D9886668.PN.%2526OS%3DPN%2F9886668%2526RS%3DPN%2F9886668&PageNum=&Rtype=&SectionNum=&idkey=NONE&Input=View+first+page

Andresen S; Dzurak A; Guaja E; Hearne S; Hopf T; Jamieson D; Mitic M; Prawer S; Yang C, 2017, Implanted counted ions, Belgium, Patent No. 1747579, https://worldwide.espacenet.com/publicationDetails/biblio?CC=EP&NR=1747579B1&KC=B1&FT=D#

Andresen S; Dzurak A; Guaja E; Hearne S; Hopf T; Jamieson D; Mitic M; Prawer S; Yang C, 2017, Implanted counted ions, France, Patent No. 1747579, https://worldwide.espacenet.com/publicationDetails/biblio?CC=EP&NR=1747579B1&KC=B1&FT=D#

Andresen S; Dzurak A; Guaja E; Hearne S; Hopf T; Jamieson D; Mitic M; Prawer S; Yang C, 2017, Implanted counted ions, Netherlands, Patent No. 1747579, https://worldwide.espacenet.com/publicationDetails/biblio?CC=EP&NR=1747579B1&KC=B1&FT=D#

Andresen S; Dzurak A; Guaja E; Hearne S; Hopf T; Jamieson D; Mitic M; Prawer S; Yang C, 2017, Implanted counted ions, United Kingdom, Patent No. 1747579, https://worldwide.espacenet.com/publicationDetails/biblio?CC=EP&NR=1747579B1&KC=B1&FT=D#

Andresen S; Dzurak A; Guaja E; Hearne S; Hopf T; Jamieson D; Mitic M; Prawer S; Yang C, 2017, Implanted counted ions, Germany, Patent No. 602005052411.8, https://register.dpma.de/DPMAregister/pat/register?AKZ=E057399008

Working Papers

Cifuentes J; Tanttu T; Gilbert W; Huang J; Vahapoglu E; Leon R; Serrano S; Otter D; Dunmore D; Mai P; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang C-H; Escott C; Lim WH; Hudson F; Rahman R; Dzurak A; Saraiva A, Bounds to electron spin qubit variability for scalable CMOS architectures, Research Square Platform, http://dx.doi.org10.21203/rs.3.rs-3057916/v1

Creative Works (non-textual)

Wang Z; Feng M; Serrano S; Gilbert W; Leon RCC; Tanttu T; Mai P; Liang D; Huang JY; Su Y; Lim WH; Hudson FE; Escott CC; Morello A; Yang CH; Dzurak AS; Saraiva A; Laucht A, 2023, Jellybean Quantum Dots in Silicon for Qubit Coupling and On‐Chip Quantum Chemistry (Adv. Mater. 19/2023)

Preprints

Van VKH; Serrano S; Bohémier C; Dash A; Hudson FE; Tanttu T; Yang CH; Feng M; Vahapoglu E; Unseld FK; Lim WH; Morello A; Dzurak AS; Chan KW, 2026, Dispersive Readout of a SiMOS Quantum Dot Using a Flip-Chip Integrated Microwave Resonator, http://dx.doi.org/10.48550/arxiv.2607.14559

Steinacker P; Seedhouse AE; Stuyck ND; Tanttu T; Feng M; Serrano S; Vahapoglu E; Bartee SK; Mai PY; Shaw A; Nickl A; Pauka S; Harlech-Jones B; Dehollain JP; Hudson FE; Chan KW; Ohki TA; Reilly D; Escott CC; Yang CH; Lim WH; Laucht A; Saraiva A; Dzurak AS; Cole JH, 2026, Optimal operating temperature for industry-compatible silicon spin quantum computing: colder is not necessarily better, http://dx.doi.org/10.48550/arxiv.2607.11846

Nickl A; Stuyck ND; Steinacker P; Cifuentes JD; Serrano S; Feng M; Vahapoglu E; Hudson FE; Chan KW; Kubicek S; Jussot J; Canvel Y; Beyne S; Shimura Y; Loo R; Godfrin C; Raes B; Baudot S; Wan D; Laucht A; Yang C-H; Lim WH; Saraiva A; Escott CC; De Greve K; Dzurak AS; Tanttu T, 2026, Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device, http://dx.doi.org/10.48550/arxiv.2512.10174

Jones C; Huang JY; Serrano S; Feng M; Paz-Silva GA; Tanttu T; Steinacker P; Hudson FE; Lim WH; Abrosimov NV; Pohl H-J; Thewalt MLW; Dzurak AS; Saraiva A; Laucht A; Yang CH, 2026, Multi-Qubit Entanglement of Unit Cell Pairs in SiMOS, http://dx.doi.org/10.48550/arxiv.2605.20781

Rahman MM; Vahapoglu E; Chan KW; Tanttu T; Dash A; Huang JY; Yianni S; Chenniappan V; Cifuentes JD; Hudson F; Escott CC; Lee YK; Stuyck ND; Laucht A; Morello A; Saraiva A; Cole JH; Dzurak AS; Lim WH, 2026, Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices, http://dx.doi.org/10.48550/arxiv.2603.02814

Lin S-C; Steinacker P; Feng M; Dash A; Serrano S; Lim WH; Itoh KM; Hudson FE; Tanttu T; Saraiva A; Laucht A; Dzurak AS; Goan H-S; Yang CH, 2026, Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling, http://dx.doi.org/10.48550/arxiv.2507.15554

Jones C; Wysocki P; Feng M; Paz-Silva GA; Ostrove CI; Tanttu T; Rudinger KM; Bartee SK; Young K; Hudson FE; Lim WH; Abrosimov NV; Pohl H-J; Thewalt MLW; Blume-Kohout R; Dzurak AS; Saraiva A; Laucht A; Yang CH, 2026, Mid-circuit logic executed in the qubit layer of a quantum processor, http://dx.doi.org/10.48550/arxiv.2512.12648

Shamim A; Liles SD; Hillier J; Huang JY; Vorreiter I; Chowdhury P; Escott CC; Hudson FE; Lim WH; Chan KW; Rahman R; Dzurak AS; Hamilton AR, 2026, Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation, http://dx.doi.org/10.48550/arxiv.2603.02746

Stemp HG; van Blankenstein MR; Wilhelm B; Asaad S; Mądzik MT; Laucht A; Hudson FE; Dzurak AS; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; Morello A, 2026, Electron readout contrast enhancement in the parallel nuclear regime of an exchange-coupled donor spin qubit system, http://dx.doi.org/10.48550/arxiv.2602.14426

Vaartjes A; Su RY; O'Neill LA; Steinacker P; Goenka G; van Blankenstein MR; Yu X; Wilhelm B; Jakob AM; Hudson FE; Itoh KM; Yang CH; Dzurak AS; Jamieson DN; Nurizzo M; Holmes D; Laucht A; Morello A, 2025, Maximizing the nondemolition nature of a quantum measurement via an adaptive readout protocol, http://dx.doi.org/10.48550/arxiv.2511.10978

Severin B; Botzem T; Fedele F; Yu X; Wilhelm B; Stemp HG; de Fuentes IF; Schwienbacher D; Holmes D; Hudson FE; Dzurak AS; Jakob AM; Jamieson DN; Morello A; Ares N, 2025, Automatic tuning of a donor in a silicon quantum device using machine learning, http://dx.doi.org/10.48550/arxiv.2511.04543

Mai PY; Pereira PH; Alonso LA; Leon RCC; Yang CH; Hwang JCC; Dunmore D; Lemyre JC; Tanttu T; Huang W; Chan KW; Tan KY; Cifuentes JD; Hudson FE; Itoh KM; Laucht A; Pioro-Ladrière M; Escott CC; Dzurak A; Saraiva A; Souza RDME; Feng M, 2025, Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance, http://dx.doi.org/10.48550/arxiv.2502.01040

Steinacker P; Goenka G; Su RY; Tanttu T; Lim WH; Serrano S; Botzem T; Cifuentes JD; Lim SQ; McCallum JC; Johnson BC; Hudson FE; Chan KW; Escott CC; Saraiva A; Yang CH; Mourik V; Morello A; Dzurak AS; Laucht A, 2025, Coupling a $^{73}$Ge nuclear spin to an electrostatically defined quantum dot, http://dx.doi.org/10.48550/arxiv.2510.03981

Stemp HG; van Blankenstein MR; Asaad S; Mądzik MT; Joecker B; Firgau HR; Laucht A; Hudson FE; Dzurak AS; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; Morello A, 2025, Scalable entanglement of nuclear spins mediated by electron exchange, http://dx.doi.org/10.48550/arxiv.2503.06872

Stemp HG; Asaad S; van Blankenstein MR; Vaartjes A; Johnson MAI; Mądzik MT; Heskes AJA; Firgau HR; Su RY; Yang CH; Laucht A; Ostrove CI; Rudinger KM; Young K; Blume-Kohout R; Hudson FE; Dzurak AS; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; Morello A, 2025, Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits, http://dx.doi.org/10.48550/arxiv.2309.15463

Vorreiter I; Huang JY; Liles SD; Hillier J; Li R; Raes B; Kubicek S; Jussot J; Beyne S; Godfrin C; Sharma S; Wan D; Stuyck ND; Gilbert W; Yang CH; Dzurak AS; De Greve K; Hamilton AR, 2025, Precision high-speed quantum logic with holes on a natural silicon foundry platform, http://dx.doi.org/10.48550/arxiv.2508.00446

Dash A; Tripathi SP; Georgakopoulos D; Feng M; Yianni S; Vahapoglu E; Rahman MM; Bonen S; Brace O; Huang JY; Lim WH; Chan KW; Gilbert W; Laucht A; Morello A; Saraiva A; Escott CC; Voinigescu SP; Dzurak AS; Tanttu T, 2025, Scalable quantum current source on commercial CMOS process technology, http://dx.doi.org/10.48550/arxiv.2506.15956

Lim WH; Tanttu T; Youn T; Huang JY; Serrano S; Dickie A; Yianni S; Hudson FE; Escott CC; Yang CH; Laucht A; Saraiva A; Chan KW; Cifuentes JD; Dzurak AS, 2025, A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling, http://dx.doi.org/10.48550/arxiv.2411.13882

Sarkar A; Chowdhury P; Hu X; Saraiva A; Dzurak AS; Hamilton AR; Rahman R; Culcer D, 2025, Effect of disorder and strain on the operation of planar Ge hole spin qubits, http://dx.doi.org/10.48550/arxiv.2502.06949

Seedhouse AE; Stuyck ND; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson FE; Itoh KM; Laucht A; Lim WH; Yang CH; Dzurak AS; Saraiva A, 2025, Wavelet correlation noise analysis for qubit operation variable time series, http://dx.doi.org/10.48550/arxiv.2309.12542

Wendoloski JP; Hillier J; Liles SD; Rendell M; Ashlea-Alava Y; Raes B; Li R; Kubicek S; Godfrin C; Jussot J; Beyne S; Wan D; Rahman MM; Yianni S; Chan KW; Hudson FE; Lim WH; De Greve K; Dzurak AS; Hamilton AR, 2025, Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs, http://dx.doi.org/10.48550/arxiv.2502.21173

Yu X; Wilhelm B; Holmes D; Vaartjes A; Schwienbacher D; Nurizzo M; Kringhøj A; van Blankenstein MR; Jakob AM; Gupta P; Hudson FE; Itoh KM; Murray RJ; Blume-Kohout R; Ladd TD; Anand N; Dzurak AS; Sanders BC; Jamieson DN; Morello A, 2025, Schrödinger cat states of a nuclear spin qudit in silicon, http://dx.doi.org/10.48550/arxiv.2405.15494

Steinacker P; Stuyck ND; Lim WH; Tanttu T; Feng M; Nickl A; Serrano S; Candido M; Cifuentes JD; Hudson FE; Chan KW; Kubicek S; Jussot J; Canvel Y; Beyne S; Shimura Y; Loo R; Godfrin C; Raes B; Baudot S; Wan D; Laucht A; Yang CH; Saraiva A; Escott CC; De Greve K; Dzurak AS, 2024, A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations, http://dx.doi.org/10.48550/arxiv.2410.15590

Vaartjes A; Nurizzo M; Zaw LH; Wilhelm B; Yu X; Holmes D; Schwienbacher D; Kringhøj A; van Blankenstein MR; Jakob AM; Hudson FE; Itoh KM; Murray RJ; Blume-Kohout R; Anand N; Dzurak AS; Jamieson DN; Scarani V; Morello A, 2024, Certifying the quantumness of a nuclear spin qudit through its uniform precession, http://dx.doi.org/10.48550/arxiv.2410.07641

Stuyck ND; Saraiva A; Gilbert W; Pardo JC; Li R; Escott CC; De Greve K; Voinigescu S; Reilly DJ; Dzurak AS, 2024, CMOS compatibility of semiconductor spin qubits, http://dx.doi.org/10.48550/arxiv.2409.03993

Steinacker P; Tanttu T; Lim WH; Stuyck ND; Feng M; Serrano S; Vahapoglu E; Su RY; Huang JY; Jones C; Itoh KM; Hudson FE; Escott CC; Morello A; Saraiva A; Yang CH; Dzurak AS; Laucht A, 2024, Violating Bell's inequality in gate-defined quantum dots, http://dx.doi.org/10.48550/arxiv.2407.15778

Bartee SK; Gilbert W; Zuo K; Das K; Tanttu T; Yang CH; Stuyck ND; Pauka SJ; Su RY; Lim WH; Serrano S; Escott CC; Hudson FE; Itoh KM; Laucht A; Dzurak AS; Reilly DJ, 2024, Spin Qubits with Scalable milli-kelvin CMOS Control, http://dx.doi.org/10.48550/arxiv.2407.15151

Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2024, Bounds to electron spin qubit variability for scalable CMOS architectures, http://dx.doi.org/10.48550/arxiv.2303.14864

Liang DH; Feng M; Mai PY; Cifuentes JD; Dzurak AS; Saraiva A, 2024, Electronic Correlations in Multielectron Silicon Quantum Dots, http://dx.doi.org/10.48550/arxiv.2407.04289

Tanttu T; Lim WH; Huang JY; Stuyck ND; Gilbert W; Su RY; Feng M; Cifuentes JD; Seedhouse AE; Seritan SK; Ostrove CI; Rudinger KM; Leon RCC; Huang W; Escott CC; Itoh KM; Abrosimov NV; Pohl H-J; Thewalt MLW; Hudson FE; Blume-Kohout R; Bartlett SD; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2024, Assessment of error variation in high-fidelity two-qubit gates in silicon, http://dx.doi.org/10.48550/arxiv.2303.04090

Hansen I; Seedhouse AE; Serrano S; Nickl A; Feng M; Huang JY; Tanttu T; Stuyck ND; Lim WH; Hudson FE; Itoh KM; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2023, Entangling gates on degenerate spin qubits dressed by a global field, http://dx.doi.org/10.48550/arxiv.2311.09567

Liles SD; Halverson DJ; Wang Z; Shamim A; Eggli RS; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell M; Huang JH; Escott CC; Hudson FE; Lim WH; Culcer D; Dzurak AS; Hamilton AR, 2023, A singlet-triplet hole-spin qubit in MOS silicon, http://dx.doi.org/10.48550/arxiv.2310.09722

Su RY; Huang JY; Stuyck ND; Feng MK; Gilbert W; Evans TJ; Lim WH; Hudson FE; Chan KW; Huang W; Itoh KM; Harper R; Bartlett SD; Yang CH; Laucht A; Saraiva A; Tanttu T; Dzurak AS, 2023, Characterizing non-Markovian Quantum Process by Fast Bayesian Tomography, http://dx.doi.org/10.48550/arxiv.2307.12452

Wang Z; Sarkar A; Liles SD; Saraiva A; Dzurak AS; Hamilton AR; Culcer D, 2023, Electrical operation of hole spin qubits in planar MOS silicon quantum dots, http://dx.doi.org/10.48550/arxiv.2309.12243

Stuyck ND; Seedhouse AE; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson F; Itoh KM; Laucht A; Lim WH; Yang CH; Saraiva A; Dzurak AS, 2023, Real-time feedback protocols for optimizing fault-tolerant two-qubit gate fidelities in a silicon spin system, http://dx.doi.org/10.48550/arxiv.2309.12541

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