Select Publications
Journal articles
2024, 'High-fidelity initialization and control of electron and nuclear spins in a four-qubit register', Nature Nanotechnology, 19, pp. 605 - 611, http://dx.doi.org/10.1038/s41565-023-01596-9
,2024, 'Impact of measurement backaction on nuclear spin qubits in silicon', Physical Review B, 109, http://dx.doi.org/10.1103/PhysRevB.109.035157
,2023, 'Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates', ACS Nano, 17, pp. 22601 - 22610, http://dx.doi.org/10.1021/acsnano.3c06668
,2023, 'Hyperfine-mediated spin relaxation in donor-atom qubits in silicon', Physical Review Research, 5, http://dx.doi.org/10.1103/PhysRevResearch.5.023043
,2023, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202201625
,2023, 'High-Fidelity CNOT Gate for Donor Electron Spin Qubits in Silicon', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.024068
,2023, 'Single-Shot Readout of Multiple Donor Electron Spins with a Gate-Based Sensor', PRX Quantum, 4, http://dx.doi.org/10.1103/PRXQuantum.4.010319
,2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202370039
,2022, 'Impact of charge noise on electron exchange interactions in semiconductors', npj Quantum Information, 8, http://dx.doi.org/10.1038/s41534-022-00523-5
,2022, 'Ramped measurement technique for robust high-fidelity spin qubit readout', Science Advances, 8, http://dx.doi.org/10.1126/sciadv.abq0455
,2022, 'Shelving and latching spin readout in atom qubits in silicon', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.075418
,2022, 'Engineering topological states in atom-based semiconductor quantum dots', Nature, 606, pp. 694 - 699, http://dx.doi.org/10.1038/s41586-022-04706-0
,2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006
,2020, 'Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202003361
,2019, 'A two-qubit gate between phosphorus donor electrons in silicon', Nature, 571, pp. 371 - 375, http://dx.doi.org/10.1038/s41586-019-1381-2
,2019, 'Benchmarking high fidelity single-shot readout of semiconductor qubits', New Journal of Physics, 21, pp. 063011, http://dx.doi.org/10.1088/1367-2630/ab242c
,2018, 'Two-electron spin correlations in precision placed donors in silicon', Nature Communications, 9, pp. 980, http://dx.doi.org/10.1038/s41467-018-02982-x
,2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, 4, pp. eaaq1459, http://dx.doi.org/10.1126/sciadv.aaq1459
,2018, 'Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot', Applied Physics Letters, 112, pp. 243105, http://dx.doi.org/10.1063/1.5021500
,2017, 'Tunneling Statistics for Analysis of Spin-Readout Fidelity', Physical Review Applied, 8, pp. 034019, http://dx.doi.org/10.1103/PhysRevApplied.8.034019
,2017, 'High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon', Physical Review Letters, 119, http://dx.doi.org/10.1103/PhysRevLett.119.046802
,2016, 'Mapping the chemical potential landscape of a triple quantum dot', Physical Review B, 94, pp. 054314, http://dx.doi.org/10.1103/PhysRevB.94.054314
,2016, 'Extracting inter-dot tunnel couplings between few donor quantum dots in silicon', New Journal of Physics, 18, pp. 053041, http://dx.doi.org/10.1088/1367-2630/18/5/053041
,2015, 'Impact of nuclear spin dynamics on electron transport through donors', Physical Review B - Condensed Matter and Materials Physics, 92, pp. 125413, http://dx.doi.org/10.1103/PhysRevB.92.125413
,2012, 'Inhomogeneities in YBa2Cu3O7 thin films with reduced thickness', Physica C: Superconductivity, 479, pp. 102 - 105, http://dx.doi.org/10.1016/j.physc.2011.12.009
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