ORCID as entered in ROS
https://orcid.org/0000-0002-3672-7127
Select Publications
By Dr Yan Zhu
Conference Papers
, 2024, 'Contactless quantitative imaging of series resistance of solar cells', Vienna, Austria, presented at
, 2024, 'Contactless quantitative imaging of series resistance of solar cells', Vienna, Austria, presented at
, 2024, 'Contactless external quantum efficiency evaluation of perovskite solar cells', Seattle; USA, presented at
, 2024, 'Outdoor photoluminescence imaging of perovskite-based photovoltaic devices', Seattle; USA, presented at
, 2024, 'Spatially resolved characterisation of large-area perovskite modules', Seattle, USA, presented at
, 2023, 'Dynamic calibration of injection dependent carrier lifetime from time-resolved photoluminescence', in 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC), Institute of Electrical and Electronics Engineers (IEEE), Puerto Rico, pp. 1 - 1, presented at
, 2022, 'Extracting the parameters of two-energy-level defects in silicon wafers using machine learning', Newcastle, Australia, presented at
, 2022, 'Photoluminescence imaging using non-uniform excitation: Recent progress', Milan, Italy, presented at
, 2022, 'Contactless determination of emitter sheet resistance for diffused silicon wafers', in 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Institute of Electrical and Electronics Engineers (IEEE), Philadelphia, USA, pp. 0367 - 0367, presented at
, 2020, 'Boron-oxygen-related traps in Czochralski grown silicon', Online, presented at
, 2020, 'Improving photoluminescence imaging using non-uniform illumination', UNSW ACDC Research Group, On-line, presented at
, 2020, 'Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier trapping and recombination active centers', in Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), Virtual, pp. 0689 - 0692, presented at
, 2020, 'Temperature-dependent photoluminescence imaging using non-uniform excitation', in Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), Virtual, pp. 0789 - 0792, presented at
, 2019, 'An incomplete ionization model for indium in silicon', Canberra, presented at
, 2019, 'Inversion of the Shockley-Read-Hall equation using random forests', Canberra, presented at
, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Canberra, presented at
, 2019, 'Injection dependent lifetime spectroscopy for two level defects in silicon', Chicago, USA, presented at
, 2019, 'New insights into the thermally activated defects in n-type float-zone silicon', Leuven, presented at
, 2018, 'Accurate defect recombination parameters: What are the limitations of current analyses?', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 2520 - 2523, http://dx.doi.org/10.1109/PVSC.2018.8547585
, 2018, 'Insights into bulk defect in n-type monocrystalline silicon via temperature-dependent micro-photoluminescence spectroscopy', Hawaii, presented at
, 2018, 'Analysis of SiNx SRV injection- and temperature-dependence and its degradation via TIDLS measurements', Hawaii, presented at
, 2018, 'Investigating the different degradation behavior of multicrystalline silicon PERC and Al-BSF solar cells', Hawaii, presented at
, 2018, 'Reassessment of minority carrier traps in silicon during “quasi-steady-state” photoconductance measurements', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers (IEEE), Hawaii, USA, pp. 77 - 80, presented at
, 2018, 'Surface photovoltage spectroscopy as a characterization technique for surface passivation quality assessmen', Hawaii, presented at
, 2018, 'Insights into striations in n-type Czochralski wafers investigated via low-temperature hyperspectral and temperature-dependent spectral photoluminescence', Japan, presented at
, 2017, 'Defect engineering for material-quality improvements in low-capex crystalline silicon—an application of temperature- and injection-dependent lifetime spectroscopy', Boston, presented at
, 2017, 'Advanced temperature charctrisation of silicon nitride surface passivation layer', Shiga, Japan, presented at
, 2017, 'Impact of transient trapping on steady state photoconductance lifetime measurements', Shiga, Japan, presented at
, 2017, 'Photoluminescence imaging at uniform excess carrier density using non uniform illumination', in IEEE Journal of Photovoltaics, Institute of Electrical and Electronics Engineers (IEEE), Shiga, Japan, pp. 1787 - 1792, presented at
, 2017, 'Applications of DMD-based inhomogeneous illumination photoluminescence imaging for silicon wafers and solar cells', in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers (IEEE), Washington D.C., pp. 66 - 69, presented at
, 2017, 'Assessing the defect responsible for LeTID: Temperature- and injection-dependent lifetime spectroscopy', in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers (IEEE), Washington D.C, pp. 3290 - 3294, presented at
, 2016, 'Defect characterization via temperature and injection dependent lifetime spectroscopy', Tempe, Arizona, presented at
https://orcid.org/0000-0002-3672-7127