By Professor Ewa Magdalena Goldys

Journal articles

Goldys EM; Drozdowicz-Tomsia K; Jinjun S; Dosev D; Kennedy IM; Yatsunenko S; Godlewski M, 2006, 'Optical characterization of Eu-doped and undoped Gd2O 3 nanoparticles synthesized by the hydrogen flame pyrolysis method', Journal of the American Chemical Society, 128, pp. 14498 - 14505, http://dx.doi.org/10.1021/ja0621602

Drozdowicz-Tomsia K; Goldys EM; Fu L; Jagadish C, 2006, 'Doping effect on dark currents in In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition', Applied Physics Letters, 89, http://dx.doi.org/10.1063/1.2354432

Bhatta H; Goldys EM; Learmonth RP, 2006, 'Use of fluorescence spectroscopy to differentiate yeast and bacterial cells', Applied Microbiology and Biotechnology, 71, pp. 121 - 126, http://dx.doi.org/10.1007/s00253-005-0309-y

Dosev D; Kennedy IM; Godlewski M; Gryczynski I; Tomsia K; Goldys EM, 2006, 'Fluorescence upconversion in Sm-doped Gd 2O 3', Applied Physics Letters, 88, http://dx.doi.org/10.1063/1.2161400

Zhu G; Drozdowicz-Tomsia K; Yu H; Motlan ; Goldys EM, 2006, 'Synthesis and characterization of disodium ethylenediaminetetraacetic acid capped and europium doped CdS nanoparticles', Solid State Communications, 137, pp. 503 - 506, http://dx.doi.org/10.1016/j.ssc.2005.12.026

Chen PPT; Butcher KSA; Goldys EM; Tansley TL; Prince KE, 2006, 'High energy Urbach characteristic observed for gallium nitride amorphous surface oxide', Thin Solid Films, 496, pp. 342 - 345, http://dx.doi.org/10.1016/j.tsf.2005.09.005

Gryczynski I; Malicka J; Lakowicz JR; Goldys EM; Calander N; Gryczynski Z, 2005, 'Directional two-photon induced surface plasmon-coupled emission', Thin Solid Films, 491, pp. 173 - 176, http://dx.doi.org/10.1016/j.tsf.2005.06.010

Matveeva EG; Gryczynski I; Malicka J; Gryczynski Z; Goldys E; Howe J; Berndt KW; Lakowicz JR, 2005, 'Plastic versus glass support for an immunoassay on metal-coated surfaces in optically eense samples utilizing directional surface plasmon-coupled emission', Journal of Fluorescence, 15, pp. 865 - 871, http://dx.doi.org/10.1007/s10895-005-0015-2

Yu H; Birch D; Te'o J; Goldys E; Nevalainen H, 2005, 'Confocal microscopy of FM 4-64 tagged membranes in the living fungus Trichoderma reesei', Chinese Optics Letters, 3

Paskova T; Arnaudov B; Paskov PP; Goldys EM; Hautakangas S; Saarinen K; Södervall U; Monemar B, 2005, 'Donor-acceptor pair emission enhancement in mass-transport-grown GaN', Journal of Applied Physics, 98, http://dx.doi.org/10.1063/1.1994943

Drozdowicz-Tomsia K; Goldys EM; Motlan M; Zareie H; Phillips MR, 2005, 'Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures', Applied Physics Letters, 86, pp. 1 - 3, http://dx.doi.org/10.1063/1.1920418

Paskova T; Paskov PP; Goldys EM; Valcheva E; Darakchieva V; Södervall U; Godlewski M; Zielinski M; Hautakangas S; Saarinen K; Carlström CF; Wahab Q; Monemar B, 2004, 'Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy', Journal of Crystal Growth, 273, pp. 118 - 128, http://dx.doi.org/10.1016/j.jcrysgro.2004.09.025

Gelhausen O; Malguth E; Phillips MR; Goldys EM; Strassburg M; Hoffmann A; Graf T; Gjukic M; Stutzmann M, 2004, 'Doping-level-dependent optical properties of GaN:Mn', Applied Physics Letters, 84, pp. 4514 - 4516, http://dx.doi.org/10.1063/1.1757641

Ramelan AH; Butcher KSA; Goldys EM; Tansley TL, 2004, 'High-resolution X-ray photoelectron spectroscopy of Al x Ga 1-x Sb', Applied Surface Science, 229, pp. 263 - 267, http://dx.doi.org/10.1016/j.apsusc.2004.02.001

Gelhausen O; Phillips MR; Goldys EM; Paskova T; Monemar B; Strassburg M; Hoffmann A, 2004, 'Dissociation of H-related defect complexes in Mg-doped GaN', Physical Review B - Condensed Matter and Materials Physics, 69, http://dx.doi.org/10.1103/PhysRevB.69.125210

Godlewski M; Łusakowska E; Goldys EM; Phillips MR; Böttcher T; Figge S; Hommel D; Prystawko P; Leszczynski M; Grzegory I; Porowski S, 2004, 'Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure', Applied Surface Science, 223, pp. 294 - 302, http://dx.doi.org/10.1016/j.apsusc.2003.09.012

Motlan ; Goldys EM; Butcher KSA; Tansley TL, 2004, 'Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD', Materials Letters, 58, pp. 80 - 83, http://dx.doi.org/10.1016/S0167-577X(03)00419-1

Shi JJ; Chu XL; Goldys EM, 2004, 'Propagating optical-phonon modes and their electron-phonon interactions in wurtzite GaN/AlxGa1-xN quantum wells', Physical Review B - Condensed Matter and Materials Physics, 70, http://dx.doi.org/10.1103/PhysRevB.70.115318

Gelhausen O; Phillips MR; Goldys EM, 2003, 'A method to improve the light emission efficiency of Mg-doped GaN', Journal of Physics D: Applied Physics, 36, pp. 2976 - 2979, http://dx.doi.org/10.1088/0022-3727/36/23/018

Gelhausen O; Klein HN; Phillips MR; Goldys EM, 2003, 'Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN', Applied Physics Letters, 83, pp. 3293 - 3295, http://dx.doi.org/10.1063/1.1619210

Gelhausen O; Klein HN; Phillips MR; Goldys EM, 2003, 'Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN', Physica Status Solidi (B) Basic Research, 239, pp. 310 - 315, http://dx.doi.org/10.1002/pssb.200301844

Motlan ; Butcher KSA; Goldys EM; Tansley TL, 2003, 'Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition', Materials Chemistry and Physics, 81, pp. 8 - 10, http://dx.doi.org/10.1016/S0254-0584(03)00163-9

Butcher KA; Godlewski M; Godlewski MM; Goldys EM; Kopalko K; Phillips MR; Szczerbakow A; Łusakowska E, 2003, 'Atomic layer deposition of ZnO thin films and dot structures', Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 52, pp. 277 - 277, http://dx.doi.org/10.3176/phys.math.2003.3.04

Motlan ; Goldys EM; Tansley TL, 2002, 'The effect of target nitridation on structural properties of InN grown by radio-frequency reactive sputtering', Thin Solid Films, 422, pp. 28 - 32, http://dx.doi.org/10.1016/S0040-6090(02)00772-1

Ramelan AH; Goldys EM, 2002, 'Hole mobility in Al xGa 1-xSb grown by metalorganic chemical vapor deposition', Journal of Applied Physics, 92, pp. 6051 - 6056, http://dx.doi.org/10.1063/1.1506192

Gelhausen O; Klein HN; Phillips MR; Goldys EM, 2002, 'Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN', Applied Physics Letters, 81, pp. 3747 - 3749, http://dx.doi.org/10.1063/1.1519358

Butcher KSA; Timmers H; Afifuddin ; Chen PPT; Weijers TDM; Goldys EM; Tansley TL; Elliman RG; Freitas JA, 2002, 'Crystal size and oxygen segregation for polycrystalline GaN', Journal of Applied Physics, 92, pp. 3397 - 3403, http://dx.doi.org/10.1063/1.1499232

Solov’ev VA; Toropov AA; Meltser BY; Terent’ev YA; Kyutt RN; Sitnikova AA; Semenov AN; Ivanov SV; Motlan M; Goldys EM; Kop’ev PS, 2002, 'GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics', Semiconductors, 36, pp. 816 - 820, http://dx.doi.org/10.1134/1.1493755

Valcheva E; Paskova T; Abrashev MV; Paskov PP; Persson POA; Goldys EM; Beccard R; Heuken M; Monemar B, 2002, 'Erratum: Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates (Journal of Applied Physics (2001) 90 (6011))', Journal of Applied Physics, 91, pp. 6778, http://dx.doi.org/10.1063/1.1471940

Galiev VI; Kruglov AN; Polupanov AF; Goldys EM; Tansley TL, 2002, 'Multichannel carrier scattering at quantum-well heterostructures', Semiconductors, 36, pp. 546 - 551, http://dx.doi.org/10.1134/1.1478546

Motlan ; Goldys EM; Tansley TL, 2002, 'Optical and electrical properties of InN grown by radio-frequency reactive sputtering', Journal of Crystal Growth, 241, pp. 165 - 170, http://dx.doi.org/10.1016/S0022-0248(02)01155-7

Motlan ; Goldys EM; Tansley TL, 2002, 'Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD', Journal of Crystal Growth, 236, pp. 621 - 626, http://dx.doi.org/10.1016/S0022-0248(02)00845-X

Toropov AA; Solov'ev VA; Mel'tser BY; Terent'ev YV; Kyutt RN; Semenov AN; Ivanov SV; Kop'ev PS; Motlan ; Goldys EM, 2002, 'GaAs in gaSb: A new type of heterostructure emitting at 2 μm wavelength', Journal of Materials Chemistry, 12, pp. 309 - 311, http://dx.doi.org/10.1039/b104183p

Buyanova IA; Chen WM; Goldys EM; Xin HP; Tu CW, 2002, 'Raman studies of GaNP alloy', Materials Research Society Symposium - Proceedings, 693, pp. 303 - 308

Valcheva E; Paskova T; Abrashev MV; Paskov PP; Persson POA; Goldys EM; Beccard R; Heuken M; Monemar B, 2001, 'Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates', Journal of Applied Physics, 90, pp. 6011 - 6016, http://dx.doi.org/10.1063/1.1415363

Godlewski M; Goldys EM; Pozina G; Monemar B; Pakula K; Baranowski JM; Prystawko P; Leszczynski M, 2001, 'In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayers', Physica B: Condensed Matter, 308-310, pp. 102 - 105, http://dx.doi.org/10.1016/S0921-4526(01)00671-8

Buyanova IA; Chen WM; Goldys EM; Phillips MR; Xin HP; Tu CW, 2001, 'Strain relaxation in GaNxP1-x alloy: Effect on optical properties', Physica B: Condensed Matter, 308-310, pp. 106 - 109, http://dx.doi.org/10.1016/S0921-4526(01)00708-6

Godlewski M; Goldys EM; Butcher KSA; Phillips MR; Pakula K; Baranowski JM, 2001, 'Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures', Physica Status Solidi (B) Basic Research, 228, pp. 179 - 182, http://dx.doi.org/10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.0.CO;2-3

Paskova T; Paskov PP; Goldys EM; Darakchieva V; Södervall U; Godlewski M; Zielinski M; Valcheva E; Carlström CF; Wahab Q; Monemar B, 2001, 'Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN', Physica Status Solidi (A) Applied Research, 188, pp. 447 - 451, http://dx.doi.org/10.1002/1521-396X(200111)188:1<447::AID-PSSA447>3.0.CO;2-9

Butcher KSA; Afifuddin ; Chen PPT; Goldys EM; Tansley TL, 2001, 'UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition', Physica Status Solidi (A) Applied Research, 188, pp. 667 - 671, http://dx.doi.org/10.1002/1521-396X(200112)188:2<667::AID-PSSA667>3.0.CO;2-S

Motlan ; Goldys EM, 2001, 'Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure', Applied Physics Letters, 79, pp. 2976 - 2978, http://dx.doi.org/10.1063/1.1415351

Arnaudov B; Paskova T; Goldys EM; Evtimova S; Monemar B, 2001, 'Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN', Physical Review B - Condensed Matter and Materials Physics, 64, pp. 452131 - 4521312

Paskova T; Goldys EM; Paskov PP; Wahab Q; Wilzen L; De Jong MP; Monemar B, 2001, 'Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN', Applied Physics Letters, 78, pp. 4130 - 4132, http://dx.doi.org/10.1063/1.1381421

Buyanova IA; Chen WM; Goldys EM; Xin HP; Tu CW, 2001, 'Structural properties of a GaNxP1-x alloy: Raman studies', Applied Physics Letters, 78, pp. 3959 - 3961, http://dx.doi.org/10.1063/1.1380244

Godlewski M; Mackowski S; Karczewski G; Goldys EM; Phillips MR, 2001, 'Cathodolfiminescence studies of self-organized cdTe/ZnTe quantum dot structure grown by MBE: In-plane and in-depth properties of the system', Semiconductor Science and Technology, 16, pp. 493 - 496, http://dx.doi.org/10.1088/0268-1242/16/6/314

Godlewski M; Goldys EM; Phillips MR; Pakula K; Baranowski JM, 2001, 'Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer', Applied Surface Science, 177, pp. 22 - 31, http://dx.doi.org/10.1016/S0169-4332(01)00188-X

Shi JJ; Sanders BC; Pan SH; Goldys EM, 2001, 'Improving performance of resonant tunneling devices in asymmetric structures', Physica E: Low-Dimensional Systems and Nanostructures, 10, pp. 535 - 543, http://dx.doi.org/10.1016/S1386-9477(01)00147-3

Valcheva E; Paskova T; Abrashev MV; Persson PAO; Paskov PP; Goldys EM; Beccard R; Heuken M; Monemar B, 2001, 'Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN', Materials Science and Engineering: B, 82, pp. 35 - 38, http://dx.doi.org/10.1016/S0921-5107(00)00676-0

Goldys EM; Godlewski M; Paskova T; Pozina G; Monemar B, 2001, 'Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN', MRS Internet Journal of Nitride Semiconductor Research, 6, http://dx.doi.org/10.1557/S1092578300000132

Monemar B; Arnaudov B; Evtimova S; Paskova T; Goldys EM, 2001, 'Modeling of the free-electron recombination band in emission spectra of highly conducting (formula presented)', Physical Review B - Condensed Matter and Materials Physics, 64, http://dx.doi.org/10.1103/PhysRevB.64.045213

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