By Professor Ewa Magdalena Goldys

Journal articles

Goldys EM; Godlewski M; Kaminska E; Piotrowska A; Butcher KSA, 2001, 'Spatial Fluctuations and Localisation Effects in Optical Characteristics of p-Doped GaN Films', physica status solidi (b), 228, pp. 365 - 369, http://dx.doi.org/10.1002/1521-3951(200111)228:2<365::aid-pssb365>3.0.co;2-e

Goldys EM; Godlewski M, 2000, 'Nonuniform defect distribution in GaN thin films examined by cathodoluminescence', Applied Physics A: Materials Science and Processing, 70, pp. 329 - 331, http://dx.doi.org/10.1007/s003390050055

Godlewski M; Goldys EM; Phillips MR; Langer R; Barski A, 2000, 'Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures', Journal of Materials Research, 15, pp. 495 - 501, http://dx.doi.org/10.1557/JMR.2000.0074

Godlewski M; Goldys EM; Phillips MR, 2000, 'Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers', Journal of Luminescence, 87, pp. 1155 - 1157, http://dx.doi.org/10.1016/S0022-2313(99)00577-3

Subekti A; Goldys EM; Tansley TL, 2000, 'Characterization of undoped gallium antimonide grown by metalorganic chemical vapour deposition', Journal of Physics and Chemistry of Solids, 61, pp. 537 - 544, http://dx.doi.org/10.1016/S0022-3697(99)00248-6

Paskova T; Goldys EM; Yakimova R; Svedberg EB; Henry A; Monemar B, 2000, 'Influence of growth rate on the structure of thick GaN layers grown by HVPE', Journal of Crystal Growth, 208, pp. 18 - 26, http://dx.doi.org/10.1016/S0022-0248(99)00487-X

Goldys E; La Rocca G; Bassani F, 2000, 'Signatures of excitonic dark states in the time-resolved coherent response of a quantum well microcavity', Physical Review B - Condensed Matter and Materials Physics, 61, pp. 10346 - 10360, http://dx.doi.org/10.1103/PhysRevB.61.10346

Sudesh V; Goldys EM, 2000, 'Spectroscopic properties of thulium-doped crystalline materials including a novel host, La2Be2O5: A comparative study', Journal of the Optical Society of America B: Optical Physics, 17, pp. 1068 - 1076, http://dx.doi.org/10.1364/JOSAB.17.001068

Goldys EM; Godlewski M; Langer R; Barski A, 2000, 'Surface morphology of cubic and wurtzite GaN films', Applied Surface Science, 153, pp. 143 - 149, http://dx.doi.org/10.1016/S0169-4332(99)00342-6

Kaminska E; Piotrowska A; Barcz A; Jasinski J; Zielinski M; Golaszewska K; Davis RF; Goldys E; Tomsia K, 2000, 'Zirconium mediated hydrogen outdiffusion from p-GaN', Materials Research Society Symposium - Proceedings, 595, pp. W1091 - W1096

Muensit S; Goldys EM; Guy IL, 1999, 'Shear piezoelectric coefficients of gallium nitride and aluminum nitride', Applied Physics Letters, 75, pp. 3965 - 3967, http://dx.doi.org/10.1063/1.125508

Guy IL; Muensit S; Goldys EM, 1999, 'Electrostriction in gallium nitride', Applied Physics Letters, 75, pp. 3641 - 3643, http://dx.doi.org/10.1063/1.125414

Guy IL; Muensit S; Goldys EM, 1999, 'Extensional piezoelectric coefficients of gallium nitride and aluminum nitride', Applied Physics Letters, 75, pp. 4133 - 4135, http://dx.doi.org/10.1063/1.125560

Shi JJ; Goldys EM, 1999, 'Intersubband optical absorption in strained double barrier quantum well infrared photodetectors', IEEE Transactions on Electron Devices, 46, pp. 83 - 88, http://dx.doi.org/10.1109/16.737445

Paskova T; Birch J; Tungasmita S; Beccard R; Heuken M; Svedberg EB; Runesson P; Goldys EM; Monemar B, 1999, 'Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers', Physica Status Solidi (A) Applied Research, 176, pp. 415 - 419, http://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<415::AID-PSSA415>3.0.CO;2-U

Shi JJ; Sanders BC; Pan SH; Goldys EM, 1999, 'Optical waves in a semiconductor planar microcavity', PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 215, pp. 1157 - 1163, http://dx.doi.org/10.1002/(SICI)1521-3951(199910)215:2<1157::AID-PSSB1157>3.0.CO;2-G

Nott GJ; Goldys EM, 1999, 'Accurate modelling of absorption and refractive index in a GaAs/AlGaAs quantum well', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 526 - 529

Goldys EM; Barski A, 1999, 'Analysis of the red optical emission in cubic gan grown by molecular-beam epitaxy', Physical Review B - Condensed Matter and Materials Physics, 60, pp. 5464 - 5469, http://dx.doi.org/10.1103/PhysRevB.60.5464

Subekti A; Goldys EM; Paterson MJ; Drozdowicz-Tomsia K; Tansley TL, 1999, 'Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide', Journal of Materials Research, 14, pp. 1238 - 1245, http://dx.doi.org/10.1557/JMR.1999.0169

Arnaudov B; Paskova T; Goldys EM; Yakimova R; Evtimova S; Ivanov IG; Henry A; Monemar B, 1999, 'Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy', Journal of Applied Physics, 85, pp. 7888 - 7892, http://dx.doi.org/10.1063/1.370602

Paskova T; Goldys EM; Monemar B, 1999, 'Hydride vapour-phase epitaxy growth and cathodoluminescence characterization of thick GaN films', Journal of Crystal Growth, 203, pp. 1 - 11, http://dx.doi.org/10.1016/S0022-0248(99)00088-3

Zuo HY; Paterson MJ; Goldys E; Tansley TL; Afifuddin , 1999, 'Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 199 - 201

Goldys EM; Godlewski M; Drozdowicz-Tomsia K; Langer R; Barski A, 1999, 'Optical emission bands in cubic GaN grown by MBE', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 202 - 205

Shi JJ; Sanders BC; Shao-Hua P; Goldys EM, 1999, 'Optical waves in a semiconductor planar microcavity', Physica Status Solidi (B) Basic Research, 215, pp. 1157 - 1163, http://dx.doi.org/10.1002/(SICI)1521-3951(199910)215:2<1157::AID-PSSB1157>3.0.CO;2-G

Shi JJ; Sanders BC; Pan SH; Goldys EM, 1999, 'Optical-phonon modes and electron-phonon interaction in arbitrary semiconductor planar microcavities', Physical Review B - Condensed Matter and Materials Physics, 60, pp. 16031 - 16038, http://dx.doi.org/10.1103/PhysRevB.60.16031

Motlan ; Goldys EM; Drozdowicz-Tomsia K; Tansley TL, 1999, 'Size and density control of MOCVD grown self-organized GaSb islands on GaAs', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 460 - 463

Subekti A; Paterson MJ; Goldys EM; Tansley TL, 1999, 'The influence of substrate on the self-organised island nucleation and morphology of metalorganic chemical vapour deposited GaSb', Applied Surface Science, 140, pp. 190 - 196, http://dx.doi.org/10.1016/S0169-4332(98)00590-X

Goldys EM; Paskova T; Ivanov IG; Arnaudov B; Monemar B, 1998, 'Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence', Applied Physics Letters, 73, pp. 3583 - 3585, http://dx.doi.org/10.1063/1.122831

Godlewski M; Goldys EM; Phillips MR; Langer R; Barski A, 1998, 'Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN', Applied Physics Letters, 73, pp. 3686 - 3688, http://dx.doi.org/10.1063/1.122863

Kinder BM; Goldys EM, 1998, 'Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition', Applied Physics Letters, 73, pp. 1233 - 1235, http://dx.doi.org/10.1063/1.122137

Subekti A; Tansley TL; Goldys EM, 1998, 'Tunnelling transport in Al-n-GaSb schottky diodes', IEEE Transactions on Electron Devices, 45, pp. 2247 - 2248, http://dx.doi.org/10.1109/16.725261

Goldys EM; Shi JJ, 1998, 'Linear and nonlinear intersubband optical absorption in a strained double barrier quantum well', PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 210, pp. 237 - 248, http://dx.doi.org/10.1002/(SICI)1521-3951(199811)210:1<237::AID-PSSB237>3.0.CO;2-V

Subekti A; Paterson MJ; Goldys E; Tansley TL, 1998, 'Metalorganic chemical vapour deposition of GaSb quantum dots on germanium', Thin Solid Films, 320, pp. 166 - 168, http://dx.doi.org/10.1016/S0040-6090(98)00348-4

Goldys EM; Zuo HY; Tansley TL; Phillips MR; Contessa CM, 1998, 'Band offsets in In0.15Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence', Superlattices and Microstructures, 23, pp. 1223 - 1226, http://dx.doi.org/10.1006/spmi.1996.0371

Paterson MJ; Goldys EM; Zuo HY; Tansley TL, 1998, 'Characterisation of microcrystalline GaN grown on quartz and on sapphire by laser and microwave plasma enhanced metalorganic chemical vapour deposition', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37, pp. 426 - 431, http://dx.doi.org/10.1143/jjap.37.426

Sudesh V; Piper JA; Goldys EM; Seymour RS, 1998, 'Growth, characterization, and laser potential of Tm : La2Be2O5', JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 15, pp. 239 - 246, http://dx.doi.org/10.1364/JOSAB.15.000239

Sudesh V; Piper JA; Goldys EM; Seymour RS, 1998, 'Growth, characterization, and laser potential of Tm:La2Be2O5', Journal of the Optical Society of America B: Optical Physics, 15, pp. 239 - 246, http://dx.doi.org/10.1364/JOSAB.15.000239

Godlewski M; Holz PO; Bergman JP; Monemar B; Reginski K; Bugajski A; Goldys EM; Tansley TL, 1998, 'Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics', Superlattices and Microstructures, 23, pp. 107 - 111, http://dx.doi.org/10.1006/spmi.1996.0290

Goldys EM; Shi JJ, 1998, 'Linear and Nonlinear Intersubband Optical Absorption in a Strained Double Barrier Quantum Well', Physica Status Solidi (B) Basic Research, 210, pp. 237 - 248, http://dx.doi.org/10.1002/(SICI)1521-3951(199811)210:1<237::AID-PSSB237>3.0.CO;2-V

Goldys EM; Paterson MJ; Zuo HY; Tansley TL, 1998, 'Low temperature growth of gallium nitride on quartz and sapphire substrates', Materials Science Forum, 264-268, pp. 1205 - 1208, http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1205

Godlewski M; Suski T; Grzegory I; Porowski S; Langer R; Barski A; Bergman JP; Monemar B; Goldys EM; Phillips MR, 1998, 'Mechanisms of yellow and red photoluminescence in wurtzite and cubic GaN', Acta Physica Polonica A, 94, pp. 326 - 330, http://dx.doi.org/10.12693/APhysPolA.94.326

Godlewski M; Goldys EM; Philips MR; Bergman JP; Monemar B; Langer R; Barski A, 1998, 'Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si', MRS Internet Journal of Nitride Semiconductor Research, 3, http://dx.doi.org/10.1557/S109257830000123X

Goldys EM; Godlewski M; Tansley TL, 1998, 'Morphology and optical properties of laser-assisted chemical vapour deposited GaN', Acta Physica Polonica A, 94, pp. 331 - 335, http://dx.doi.org/10.12693/APhysPolA.94.331

Godlewski M; Holtz PO; Bergman JP; Monemar B; Regiński K; Bugajski M; Goldys EM; Tansley TL, 1997, 'Interisland exciton migration and enhanced bound exciton recombination in an AlGaAs/GaAs quantum well structure grown by molecular beam epitaxy without growth interruptions at interfaces', Semiconductor Science and Technology, 12, pp. 1416 - 1421, http://dx.doi.org/10.1088/0268-1242/12/11/014

Goldys EM; Zuo HY; Phillips MR; Contessa CM; Vaughan MR; Tansley TL, 1997, 'Type I and type II alignment of the light hole band in In0.15Ga0.85As/GaAs and in In0.15Ga0.85As/Al0.15Ga0.85As strained quantum wells', JOURNAL OF ELECTRONIC MATERIALS, 26, pp. 922 - 927, http://dx.doi.org/10.1007/s11664-997-0275-5

Goldys EM; Nott G; Tansley TL; Henini M; Pate MA; Hill G, 1997, 'Operation and theoretical analysis of the multiple asymmetric coupled quantum-well light modulator in the n-i-n configuration', IEEE Journal of Quantum Electronics, 33, pp. 1084 - 1088, http://dx.doi.org/10.1109/3.594869

Arifin P; Tansley TL; Goldys EM, 1997, 'Conduction mechanism in a metal-insulator-semiconductor structure with a low temperature GaAs insulating layer', Solid-State Electronics, 41, pp. 1075 - 1078, http://dx.doi.org/10.1016/S0038-1101(97)00061-0

Godlewski M; Ivanov VY; Kamińska A; Zuo HY; Goldys EM; Tansley TL; Barski A; Rossner U; Rouvicre JL; Arlery M; Grzegory I; Suski T; Porowski S; Bergman JP; Monemar B, 1997, 'On the origin of the yellow donor-acceptor pair emission in GaN', Materials Science Forum, 258-263, pp. 1149 - 1154, http://dx.doi.org/10.4028/www.scientific.net/msf.258-263.1149

Goldys EM; Zuo HY; Phillips MR; Contessa CM; Vaughan MR; Tansley TL, 1997, 'Type I and type II alignment of the light hole band in In0.15Ga0.85As/GaAs and in In0.15Ga0.85As/Al0.15Ga0.85As strained quantum wells', Journal of Electronic Materials, 26, pp. 922 - 927, http://dx.doi.org/10.1007/s11664-997-0275-5

Goldys EM; Mitchell A; Tansley TL; Egan RJ; Clark A, 1996, 'Photoreflectance of AlxGa1-xAs/GaAs and GaAs/GaAs interfaces at high light intensities', Optics Communications, 124, pp. 392 - 399, http://dx.doi.org/10.1016/0030-4018(95)00694-X

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