By Professor Renate Judith Egan

Journal articles

Tansley TL; Egan RJ, 1992, 'Point-defect energies in the nitrides of aluminum, gallium, and indium', Physical Review B, 45, pp. 10942 - 10950, http://dx.doi.org/10.1103/PhysRevB.45.10942

Chin VWL; Egan RJ; Tansley TL, 1991, 'Electron mobility in InAs1-xSbx and the effect of alloy scattering', Journal of Applied Physics, 69, pp. 3571 - 3577, http://dx.doi.org/10.1063/1.348499

Tansley TL; Egan RJ; Horrigan EC, 1988, 'Properties of sputtered nitride semiconductors', Thin Solid Films, 164, pp. 441 - 448, http://dx.doi.org/10.1016/0040-6090(88)90174-5

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