By Professor Renate Judith Egan

Journal articles

Egan RJ; Chin VWL; Tansley TL, 1994, 'Dislocation scattering effects on electron mobility in InAsSb', Journal of Applied Physics, 75, pp. 2473 - 2476, http://dx.doi.org/10.1063/1.356244

Egan RJ; Chin VWL; Tansley TL, 1994, 'Growth, morphology and electrical transport properties of MOCVD-grown p-InSb', Semiconductor Science and Technology, 9, pp. 1591 - 1597, http://dx.doi.org/10.1088/0268-1242/9/9/004

Butcher KSA; Alexiev D; Chin VWL; Tansley TL; Egan RJ; Keane M, 1993, 'Schottky barrier height modification on high-purity LPE GaAs following a sulphur-based etch', Semiconductor Science and Technology, 8, pp. 1451 - 1458, http://dx.doi.org/10.1088/0268-1242/8/7/041

Tansley TL; Egan RJ, 1993, 'Defects, optical absorption and electron mobility in indium and gallium nitrides', Physica B Physics of Condensed Matter, 185, pp. 190 - 198, http://dx.doi.org/10.1016/0921-4526(93)90236-Y

Chin VWL; Egan RJ; Tansley TL, 1992, 'Carrier concentration and compensation ratio dependence of electron drift mobility in InAs1-xSbx', Journal of Applied Physics, 72, pp. 1410 - 1415, http://dx.doi.org/10.1063/1.351700

Tansley TL; Egan RJ, 1992, 'Point-defect energies in the nitrides of aluminum, gallium, and indium', Physical Review B, 45, pp. 10942 - 10950, http://dx.doi.org/10.1103/PhysRevB.45.10942

TANSLEY TL; EGAN RJ, 1992, 'OPTICAL AND ELECTRONIC-PROPERTIES OF THE NITRIDES OF INDIUM, GALLIUM AND ALUMINUM AND THE INFLUENCE OF NATIVE DEFECTS', WIDE BAND GAP SEMICONDUCTORS, 242, pp. 395 - 407, http://dx.doi.org/10.1557/PROC-242-395

Chin VWL; Egan RJ; Tansley TL, 1991, 'Electron mobility in InAs1-xSbx and the effect of alloy scattering', Journal of Applied Physics, 69, pp. 3571 - 3577, http://dx.doi.org/10.1063/1.348499

Tansley TL; Egan RJ; Horrigan EC, 1988, 'Properties of sputtered nitride semiconductors', Thin Solid Films, 164, pp. 441 - 448, http://dx.doi.org/10.1016/0040-6090(88)90174-5

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