By Dr Ivan Perez-Wurfl

Journal articles

Morgano M; Perez-Wurfl I; Binetti S, 2011, 'Nanostructured silicon-based films for photovoltaics: Recent progresses and perspectives', Science of Advanced Materials, 3, pp. 388 - 400, http://dx.doi.org/10.1166/sam.2011.1178

Morgano M; Zhang T; Perez-Wurfl I; Binetti S; Acciarri M; Conibeer G, 2011, 'Assessment of the composition of Silicon-Rich Oxide films for photovoltaic applications by optical techniques', Energy Procedia, 10, pp. 28 - 32, http://www.sciencedirect.com/science/article/pii/S1876610211019734

Zhang T; Perez-Wurfl I; Berghoff B; Suckow S; Conibeer G, 2011, 'Optical evaluation of doping concentration in SiO2 doping source layer for silicon quantum dot materials', EPJ Photovoltaics, 2, pp. N/A, http://dx.doi.org/10.1051/epjpv/2011024

Conibeer G; Green MA; Konig D; Perez-Wurfl I; Huang S; Hao X; Di D; Shi L; Shrestha SK; Puthen Veettil B; So Y; Zhang B; Wan Z, 2011, 'Silicon quantum dot based solar cells: addressing the issues of doping, voltage and current transport', Progress in Photovoltaics: Res. Appl., 19, pp. 813 - 824, http://dx.doi.org/10.1002/pip.1045

Lin D; Ma L; Conibeer G; Perez-Wurfl I, 2011, 'Study on electrical properties of Si quantum dot based materials', Physica status solidi. C, Current topics in solid state physics : PSS, 248, pp. 472 - 476, http://dx.doi.org/10.1002/pssb.201000676

Pillai S; Perez-Wurfl I; Conibeer G; Green MA, 2011, 'Surface plasmons for improving the performance of quantum dot structures for third generation solar cell applications', Physica status solidi. C, Current topics in solid state physics : PSS, 8, pp. 181 - 184, http://dx.doi.org/10.1002/pssc.201000644

Flynn CR; Konig D; Perez-Wurfl I; Green MA; Conibeer G, 2010, 'Correlation between fixed charge and capacitance peaks in silicon nanocrystal metal–insulator–semiconductor devices', Semiconductor Science and Technology, 25, pp. 045011-1 - 045011-8, http://dx.doi.org/10.1088/0268-1242/25/4/045011

Di D; Perez-Wurfl I; Conibeer G; Green MA, 2010, 'Formation and photoluminescence of Si quantum dots in SiO2/Si3N4 hybrid matrix for all-Si tandem solar cells', Solar Energy Materials and Solar Cells, 94, pp. 2238 - 2243, http://dx.doi.org/10.1016/j.solmat.2010.07.018

Di D; Perez-Wurfl I; Gentle A; Kim DH; Hao X; Shi L; Conibeer G; Green MA, 2010, 'Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells', Nanoscale research letters, 5, pp. 1762 - 1767, http://dx.doi.org/10.1007/s11671-010-9707-x

Flynn CR; Konig D; Perez-Wurfl I; Conibeer GJ; Green MA, 2009, 'Capacitance and conductance characteristics of silicon nanocrystal metal-insulator-semiconductor devices', Solid - State Electronics, 53, pp. 530 - 539, http://dx.doi.org/10.1016/j.sse.2009.03.001

Perez-Wurfl I; Hao X; Gentle A; Kim DH; Conibeer G; Green MA, 2009, 'Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications', Applied Physics Letters, 95, pp. 153506

Gao F; Green MA; Conibeer GJ; Cho EC; Huang Y; Perez-Wurfl I; Flynn CR, 2008, 'Fabrication of multilayered Ge nanocrystals by magnetron sputtering and annealing', Nanotechnology, 19, pp. 455611 - 455615

Gao F; Green MA; Conibeer GJ; Cho EC; Huang Y; Perez-Wurfl I; Flynn CR, 2008, 'Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films', Applied Surface Science, 254, pp. 7527 - 7530

Scardera G; Puzzer T; Perez-Wurfl I; Conibeer GJ, 2008, 'The effects of annealing temperature on the photoluminescence from silicon nitride multilayer structures', Journal of Crystal Growth, 310, pp. 3680 - 3684, http://dx.doi.org/10.1016/j.jcrysgro.2008.05.018

Goulakov AB; Zhao F; Perez-Wurfl I; Torvik JT; Van Zeghbroeck B, 2007, 'Optimized reactive ion etch process for high performance SiC bipolar junction transistors', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 25, pp. 961 - 966, http://dx.doi.org/10.1116/1.2436502

Zhao F; Perez-Wurfl I; Huang CF; Torvik J; Van Zeghbroeck B, 2005, 'First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with fT/fMAX of 1/5.2 GHz', IEEE MTT-S International Microwave Symposium Digest, 2005, pp. 2035 - 2038, http://dx.doi.org/10.1109/MWSYM.2005.1517145

Perez-Wurfl I; Krutsinger R; Torvik J; Van zegjbroeck B, 2003, '4H-SiC Bipolar Junction Transistor with High Current and Power Density', Solid - State Electronics, 47, pp. 229 - 231, http://dx.doi.org/10.1016/S0038-1101(02)00199-5

Perez-Wurfl I; Konstantinov A; Torvik J; Van Zeghbroeck B, 2002, 'RF 4H-SiC Bipolar Junction Transistors', Proceedings IEEE Lester Eastman Conference on High Performance Devices, pp. 193 - 200

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