ORCID as entered in ROS
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Select Publications
2024, 'The Intermediate Connection of Subcells in Si-based Tandem Solar Cells', Small Methods, 8, http://dx.doi.org/10.1002/smtd.202300432
,2024, 'Cu2(Thiourea)Br2 complex as a multifunctional interfacial layer for reproducible PTAA‐based p‐i‐n perovskite solar cells', Solar RRL, http://dx.doi.org/10.1002/solr.202300920
,2024, 'Methylammonium-Free Ink for Low-Temperature Crystallization of α-FAPbI
2023, 'Bifacial and Semitransparent Sb
2023, 'A modeling framework to quantify the intermediate layer impact in III-V//Si multijunction solar cells', Japanese Journal of Applied Physics, 62, http://dx.doi.org/10.35848/1347-4065/acd45e
,2023, 'Perovskite solar cells based on spiro-OMeTAD stabilized with an alkylthiol additive', Nature Photonics, 17, pp. 96 - 105, http://dx.doi.org/10.1038/s41566-022-01111-x
,2021, 'Improving Performance of Bifacial-Grid III–V Solar Cells Bonded on Glass by Selective Contact Annealing', Solar RRL, 5, http://dx.doi.org/10.1002/solr.202100438
,2021, 'Kinetics of light-induced degradation in semi-transparent perovskite solar cells', Solar Energy Materials and Solar Cells, 219, http://dx.doi.org/10.1016/j.solmat.2020.110776
,2019, 'Laser-induced aluminium-assisted crystallization of Ge-rich Si
2019, 'Improvement of Cs-(FAPbI3)0.85(MAPbBr3)0.15 quality via DMSO-molecule-control to increase the efficiency and boost the long-term stability of 1 cm2 sized planar perovskite solar cells', Solar RRL, pp. 1800338 - 1800338, http://dx.doi.org/10.1002/solr.201800338
,2019, 'High open-circuit voltage CuSbS
2018, 'Reduction of Threading Dislocation Density in Sputtered Ge/Si(100) Epitaxial Films by Continuous-Wave Diode Laser-Induced Recrystallization', ACS Applied Energy Materials, 1, pp. 1893 - 1897, http://dx.doi.org/10.1021/acsaem.7b00130
,2018, 'Fabrication of low-defect Ge-rich SiGe-on-insulator by continuous-wave diode laser-induced recrystallization', Journal of Alloys and Compounds, 744, pp. 679 - 682, http://dx.doi.org/10.1016/j.jallcom.2018.02.151
,2018, 'Investigating the effect of silicon thickness on ultra-thin silicon on insulator as a compliant substrate for gallium arsenide heteroepitaxial growth', Thin Solid Films, 653, pp. 371 - 376, http://dx.doi.org/10.1016/j.tsf.2018.03.056
,2018, 'Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon: A Versatile Platform for Modern Optoelectronic Materials', Advanced Optical Materials, 6, http://dx.doi.org/10.1002/adom.201701329
,2018, 'Exploring inorganic binary alkaline halide to passivate defects in low-temperature-processed planar-structure hybrid perovskite solar cells', Advanced Energy Materials, 8, pp. 1800138 - 1800138, http://dx.doi.org/10.1002/aenm.201800138
,2017, 'Effects of Al thickness on one-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering', Materials Letters, 209, pp. 32 - 35, http://dx.doi.org/10.1016/j.matlet.2017.07.103
,2017, 'Diode laser annealing of epitaxy Ge on sapphire (0 0 0 1) grown by magnetron sputtering', Materials Letters, 208, pp. 35 - 38, http://dx.doi.org/10.1016/j.matlet.2017.05.043
,2017, 'Modeling of continuous wave laser melting of germanium epitaxial films on silicon substrates', Materials Express, 7, pp. 341 - 350, http://dx.doi.org/10.1166/mex.2017.1382
,2017, 'In situ X-ray diffraction study on epitaxial growth of Si
2016, 'Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering', Thin Solid Films, 609, pp. 49 - 52, http://dx.doi.org/10.1016/j.tsf.2016.04.040
,2015, 'Cyclic thermal annealing on Ge/Si(100) epitaxial films grown by magnetron sputtering', Thin Solid Films, http://dx.doi.org/10.1016/j.tsf.2014.11.083
,2014, 'One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4864463
,2014, 'Epitaxial growth of single-crystalline silicon-germanium on silicon by aluminium-assisted crystallization', Scripta Materialia, 71, pp. 25 - 28, http://dx.doi.org/10.1016/j.scriptamat.2013.09.026
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