Select Publications
Book Chapters
2018, 'Epitaxial Growth of Ge on Si by Magnetron Sputtering', in Epitaxy
,Journal articles
2024, 'Methylammonium-Free Ink for Low-Temperature Crystallization of α-FAPbI
2024, 'Nanostructured hybrid catalysts empower the artificial leaf for solar-driven ammonia production from nitrate', Energy and Environmental Science, 17, pp. 5653 - 5665, http://dx.doi.org/10.1039/d3ee03836j
,2024, 'The Intermediate Connection of Subcells in Si-based Tandem Solar Cells', Small Methods, 8, http://dx.doi.org/10.1002/smtd.202300432
,2024, 'Cu2(Thiourea)Br2 complex as a multifunctional interfacial layer for reproducible PTAA‐based p‐i‐n perovskite solar cells', Solar RRL, http://dx.doi.org/10.1002/solr.202300920
,2024, 'Methylammonium‐Free Ink for Low‐Temperature Crystallization of α‐FAPbI3 Perovskite (Adv. Energy Mater. 30/2024)', Advanced Energy Materials, 14, http://dx.doi.org/10.1002/aenm.202470124
,2023, 'Bifacial and Semitransparent Sb
2023, 'A modeling framework to quantify the intermediate layer impact in III-V//Si multijunction solar cells', Japanese Journal of Applied Physics, 62, http://dx.doi.org/10.35848/1347-4065/acd45e
,2023, 'Perovskite solar cells based on spiro-OMeTAD stabilized with an alkylthiol additive', Nature Photonics, 17, pp. 96 - 105, http://dx.doi.org/10.1038/s41566-022-01111-x
,2021, 'Improving Performance of Bifacial-Grid III–V Solar Cells Bonded on Glass by Selective Contact Annealing', Solar RRL, 5, http://dx.doi.org/10.1002/solr.202100438
,2021, 'Kinetics of light-induced degradation in semi-transparent perovskite solar cells', Solar Energy Materials and Solar Cells, 219, http://dx.doi.org/10.1016/j.solmat.2020.110776
,2019, 'Laser-induced aluminium-assisted crystallization of Ge-rich Si
2019, 'Improvement of Cs-(FAPbI3)0.85(MAPbBr3)0.15 quality via DMSO-molecule-control to increase the efficiency and boost the long-term stability of 1 cm2 sized planar perovskite solar cells', Solar RRL, pp. 1800338 - 1800338, http://dx.doi.org/10.1002/solr.201800338
,2019, 'High open-circuit voltage CuSbS
2018, 'Reduction of Threading Dislocation Density in Sputtered Ge/Si(100) Epitaxial Films by Continuous-Wave Diode Laser-Induced Recrystallization', ACS Applied Energy Materials, 1, pp. 1893 - 1897, http://dx.doi.org/10.1021/acsaem.7b00130
,2018, 'Fabrication of low-defect Ge-rich SiGe-on-insulator by continuous-wave diode laser-induced recrystallization', Journal of Alloys and Compounds, 744, pp. 679 - 682, http://dx.doi.org/10.1016/j.jallcom.2018.02.151
,2018, 'Investigating the effect of silicon thickness on ultra-thin silicon on insulator as a compliant substrate for gallium arsenide heteroepitaxial growth', Thin Solid Films, 653, pp. 371 - 376, http://dx.doi.org/10.1016/j.tsf.2018.03.056
,2018, 'Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon: A Versatile Platform for Modern Optoelectronic Materials', Advanced Optical Materials, 6, http://dx.doi.org/10.1002/adom.201701329
,2018, 'Exploring inorganic binary alkaline halide to passivate defects in low-temperature-processed planar-structure hybrid perovskite solar cells', Advanced Energy Materials, 8, pp. 1800138 - 1800138, http://dx.doi.org/10.1002/aenm.201800138
,2017, 'Effects of Al thickness on one-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering', Materials Letters, 209, pp. 32 - 35, http://dx.doi.org/10.1016/j.matlet.2017.07.103
,2017, 'Diode laser annealing of epitaxy Ge on sapphire (0 0 0 1) grown by magnetron sputtering', Materials Letters, 208, pp. 35 - 38, http://dx.doi.org/10.1016/j.matlet.2017.05.043
,2017, 'Modeling of continuous wave laser melting of germanium epitaxial films on silicon substrates', Materials Express, 7, pp. 341 - 350, http://dx.doi.org/10.1166/mex.2017.1382
,2017, 'In situ X-ray diffraction study on epitaxial growth of Si
2016, 'Diode laser annealing on Ge/Si (100) epitaxial films grown by magnetron sputtering', Thin Solid Films, 609, pp. 49 - 52, http://dx.doi.org/10.1016/j.tsf.2016.04.040
,2015, 'Cyclic thermal annealing on Ge/Si(100) epitaxial films grown by magnetron sputtering', Thin Solid Films, http://dx.doi.org/10.1016/j.tsf.2014.11.083
,2014, 'One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4864463
,2014, 'Epitaxial growth of single-crystalline silicon-germanium on silicon by aluminium-assisted crystallization', Scripta Materialia, 71, pp. 25 - 28, http://dx.doi.org/10.1016/j.scriptamat.2013.09.026
,Conference Papers
2020, 'Design of nanostructured intermediate layer for tandem solar cells', Virtual, presented at 47th IEEE Photovoltaics Specialists Conference, Virtual, 15 June 2020
,2019, 'Optical optimization for III-V/Si multijunction solar cells', Xi'an, China, presented at 29th International Photovoltaic Science and Engineering Conference, Xi'an, China, 04 November 2019
,2019, 'Optimization of Ag/PMMA particles in transparent conductive adhesive layer for two-terminal multijunction solar cells', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019
,2019, 'Aluminium-assisted crystallization of Ge and SiGe epitaxy on Si', Beijing, China, presented at 2019 International Conference on Metals and Alloys, Beijing, China, 19 August 2019
,2019, 'Effects of layer thicknesses on laser-induced aluminium-assisted crystallization of Ge-rich SiGe epitaxy on Si', Chicago, USA, presented at 46th IEEE Photovoltaic Specialists Conference, Chicago, USA, 16 June 2019
,2018, 'Optical optimization for III-V//Si multijunction solar cells', Sydney, presented at Asia Pacific Solar Research Conference, Sydney, 04 December 2018
,2018, 'Low-temperature epitaxial growth of Ge on Si, towards a cost-effective substrate for III-V solar cells', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 216 - 219, http://dx.doi.org/10.1109/PVSC.2018.8547316
,2018, 'Low-temperature epitaxial growth of Ge on Si, towards a cost-effective substrate for III-V solar cells', in 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), IEEE, HI, Waikoloa, pp. 0216 - 0219, presented at 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC, HI, Waikoloa, 10 June 2018 - 15 June 2018, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000469200400050&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
,2017, 'Epitaxial growth of Ge on Si at low temperatures for III-V tandem solar cells', Melbourne, Australia, presented at Asia Pacific Solar Research Conference, Melbourne, Australia, 05 December 2017
,2017, 'Dislocation density reduction of virtual Ge substrates by CW diode laser treatment', in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, pp. 412 - 416, http://dx.doi.org/10.1109/PVSC.2017.8366548
,2016, 'Defect control in mismatched Ge hetero-epitaxy by laser annealing, towards a cost-effective virtual Ge substrate for high efficiency III-V solar cells', Canberra, Australia, presented at Asia Pacific Solar Research Conference,, Canberra, Australia, 30 November 2016
,2016, 'The Development of Novel Nanocluster-Based Buffer Layers for Multi-Junction Solar Cells', Canberra, Australia, presented at Asia Pacific Solar Research Conference, Canberra, Australia, 30 November 2016
,2016, 'Dislocation density reduction of virtual Ge substrates by CW diode laser treatment', in Conference Record of the IEEE Photovoltaic Specialists Conference, Portland, OR, USA, pp. 2382 - 2384, presented at 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR, USA, 05 June 2016 - 10 June 2016, http://dx.doi.org/10.1109/PVSC.2016.7750067
,2016, 'Virtual Ge substrates with low threading dislocation density produced by CW laser induced recrystallization', Phoenix, USA, presented at 2016 MRS Spring Meeting, Phoenix, USA, 28 March 2016
,2015, 'Laser annealed Ge/Si, a cost-effective virtual Ge substrate for high efficiency III-V tandem solar cells', Brisbane, Australia, presented at Asia Pacific Solar Research Conference, Brisbane, Australia, 01 December 2015
,2015, 'Laser annealed Ge epitaxial film on Si wafer, a cost-effective virtual Ge substrate for III-V tandem solar cells', Hamburg, Germany, presented at European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 14 September 2015
,2014, 'Strategies for fabricating cost-effective virtual Ge substrates for high efficiency III-V tandem solar cells', Sydney, Australia, presented at Asia Pacific Solar Research Conference, Sydney, Australia, 08 December 2014
,2014, 'Dislocation density reduction of Ge epitaxy on Si', San Francisco, USA, presented at 2014 MRS spring meeting, San Francisco, USA, 21 April 2014
,2014, 'Transmission electron microscopy analysis of secondary phases in Cu2ZnSnS4 thin film solar cells', in Materials Research Society Symposium Proceedings, http://dx.doi.org/10.1557/opl.2014.740
,2012, 'Film thickness and substrate temperature effects on sputtered Al:ZnO window layer for Cu
Patents
2018, A method for forming a virtual germanium substrate using a laser, Patent No. US patent no.10115854; Taiwan patent no. I699817, http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=US-10115854-B2
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