By Professor Bram Hoex

Journal articles

Benick J; Hoex B; Van De Sanden MCM; Kessels WMM; Schultz O; Glunz SW, 2008, 'High efficiency n-type Si solar cells on Al2O 3-passivated boron emitters', Applied Physics Letters, 92, http://dx.doi.org/10.1063/1.2945287

Gielis JJH; Van Den Oever PJ; Hoex B; Van De Sanden MCM; Kessels WMM, 2008, 'Real-time study of a-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation', Physical Review B - Condensed Matter and Materials Physics, 77, http://dx.doi.org/10.1103/PhysRevB.77.205329

Hoex B; Schmidt J; Bock R; Altermatt PP; Van De Sanden MCM; Kessels WMM, 2007, 'Excellent passivation of highly doped p -type Si surfaces by the negative-charge-dielectric Al2 O3', Applied Physics Letters, 91, http://dx.doi.org/10.1063/1.2784168

Hoang J; Van TT; Sawkar-Mathur M; Hoex B; Van De Sanden MCM; Kessels WMM; Ostroumov R; Wang KL; Bargar JR; Chang JP, 2007, 'Optical properties of Y2O3 thin films doped with spatially controlled Er³⁺ by atomic layer deposition', Journal of Applied Physics, 101, http://dx.doi.org/10.1063/1.2748629

Hoex B; Peeters FJJ; Creatore M; Blauw MA; Kessels WMM; Van De Sanden MCM, 2006, 'High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 24, pp. 1823 - 1830, http://dx.doi.org/10.1116/1.2232580

Hoex B; Heil SBS; Langereis E; Van De Banden MCM; Kessels WMM, 2006, 'Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3', Applied Physics Letters, 89, http://dx.doi.org/10.1063/1.2240736

Agarwal S; Valipa MS; Hoex B; Van De Sanden MCM; Maroudas D; Aydil ES, 2005, 'Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces', Surface Science, 598, pp. 35 - 44, http://dx.doi.org/10.1016/j.susc.2005.09.026

Hoex B; Van Erven AJM; Bosch RCM; Stals WTM; Bijker MD; Van Den Oever PJ; Kessels WMM; Van De Sanden MCM, 2005, 'Industrial high-rate (∼5nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions', Progress in Photovoltaics: Research and Applications, 13, pp. 705 - 712, http://dx.doi.org/10.1002/pip.628

Agarwal S; Hoex B; Van De Banden MCM; Maraudas D; Aydil ES, 2004, 'Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22, pp. 2719 - 2726, http://dx.doi.org/10.1116/1.1824191

Aarts IMP; Hoex B; Smets AHM; Engeln R; Kessels WMM; Van de Sanden MCM, 2004, 'Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy', Applied Physics Letters, 84, pp. 3079 - 3081, http://dx.doi.org/10.1063/1.1713047

Agarwal S; Hoex B; Van De Sanden MCM; Maroudas D; Aydil ES, 2003, 'Absolute densities of N and excited N2 in a N2 plasma', Applied Physics Letters, 83, pp. 4918 - 4920, http://dx.doi.org/10.1063/1.1630843

LeClair P; Hoex B; Wieldraaijer H; Kohlhepp JT; Swagten HJM; De Jonge WJM, 2001, 'Sign reversal of spin polarization in Co/Ru/Al2O3/Co magnetic tunnel junctions', Physical Review B - Condensed Matter and Materials Physics, 64, pp. 1004061 - 1004064

LeClair P; Hoex B; Wieldraaijer H; Kohlhepp JT; Swagten HJM; de Jonge WJM, 2001, 'Sign reversal of spin polarization in (formula presented) magnetic tunnel junctions', Physical Review B - Condensed Matter and Materials Physics, 64, http://dx.doi.org/10.1103/PhysRevB.64.100406

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