ORCID as entered in ROS
https://orcid.org/0000-0003-2470-7118
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Conference Papers
, 2004, 'Luminescent properties of wide bandgap materials at room temperature', in Physica Status Solidi C: Conferences, pp. 213 - 218, http://dx.doi.org/10.1002/pssc.200303935
, 2004, 'Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers', in Physica Status Solidi (A) Applied Research, pp. 212 - 215, http://dx.doi.org/10.1002/pssa.200303903
, 2004, 'Cathodoluminescence properties of zinc oxide nanoparticiles', in Physica Status Solidi (A) Applied Research, pp. 229 - 234, http://dx.doi.org/10.1002/pssa.200303977
, 2004, 'Compensation mechanisms in magnesium doped GaN', in Physica Status Solidi (A) Applied Research, pp. 216 - 220, http://dx.doi.org/10.1002/pssa.200303904
, 2004, 'In-depth and in-plane profiling of light emission properties from semiconductor-based heterostructures', in Opto-Electronics Review, pp. 353 - 359
, 2004, 'In-depth and in-plane profiling of light emission properties of InGaN-based laser diode', in Physica Status Solidi (A) Applied Research, pp. 207 - 211, http://dx.doi.org/10.1002/pssa.200303902
, 2003, 'Origin of white color light emission in ALE-grown ZnSe', in Journal of Luminescence, pp. 455 - 459, http://dx.doi.org/10.1016/S0022-2313(02)00597-5
, 2003, 'Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission', in Acta Physica Polonica A, pp. 689 - 694, http://dx.doi.org/10.12693/APhysPolA.103.689
, 2003, 'Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN', in Materials Research Society Symposium - Proceedings, pp. 497 - 502, http://dx.doi.org/10.1557/proc-798-y5.20
, 2003, 'Optical properties of Mn-doped GaN', in Materials Research Society Symposium - Proceedings, pp. 569 - 574, http://dx.doi.org/10.1557/proc-798-y8.5
, 2003, 'Spin dependent interactions of free carriers and manganese ions in nanostructures of wide band gap II-Mn-VI semiconductors - Mechanism of lifetime reduction', in Acta Physica Polonica A, pp. 643 - 648, http://dx.doi.org/10.12693/APhysPolA.103.643
, 2002, 'Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers', in Journal of Crystal Growth, pp. 237 - 243, http://dx.doi.org/10.1016/S0022-0248(02)01747-5
, 2002, 'Free-standing HVPE-GaN quasi-substrates: Impurity and strain distributions', in Physica Status Solidi C: Conferences, pp. 209 - 213, http://dx.doi.org/10.1002/pssc.200390025
, 2002, 'Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride', in Physica Status Solidi C: Conferences, pp. 373 - 376, http://dx.doi.org/10.1002/pssc.200390066
, 2002, 'Atomic layer epitaxy of ZnO for substrates for GaN epitaxy', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 13 - 16, http://dx.doi.org/10.1109/COMMAD.2002.1237178
, 2002, 'Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN', in Materials Research Society Symposium - Proceedings, pp. 653 - 658, http://dx.doi.org/10.1557/proc-744-m10.7
, 2002, 'Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition', in Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, pp. 291 - 294, http://dx.doi.org/10.1116/1.1445167
, 2002, 'Relationship between sample morphology and carrier diffusion length in gan thin films', in Acta Physica Polonica A, pp. 627 - 632, http://dx.doi.org/10.12693/APhysPolA.102.627
, 2002, 'X-ray photoelectron spectroscopy of Al
, 2001, 'MOCVD GaSb/GaAs quantum dots', in Materials Research Society Symposium - Proceedings
, 2001, 'Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells', in Materials Research Society Symposium - Proceedings
, 2001, 'Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures', in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, WILEY-V C H VERLAG GMBH, COLORADO, DENVER, pp. 179 - 182, presented at
, 2001, 'Spatial fluctuations and localisation effects in optical characteristics of p-Doped GaN films', in Physica Status Solidi (B) Basic Research, pp. 365 - 369, http://dx.doi.org/10.1002/1521-3951(200004)218
, 2000, 'Cathodoluminescence study of nitride transistor structures - Characterisation of native oxide', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 133 - 136, http://dx.doi.org/10.1109/COMMAD.2000.1022909
, 2000, 'Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 539 - 542, http://dx.doi.org/10.1109/COMMAD.2000.1023006
, 2000, 'Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 125 - 128, http://dx.doi.org/10.1109/COMMAD.2000.1022907
, 2000, 'Glass substrates for GaN using ZnO buffer layers', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 535 - 538, http://dx.doi.org/10.1109/COMMAD.2000.1023005
, 2000, 'Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 129 - 132, http://dx.doi.org/10.1109/COMMAD.2000.1022908
, 2000, 'Measurements of piezoelectric coefficients of nitride semiconductor films', in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, pp. 55 - 58, http://dx.doi.org/10.1109/SIM.2000.939197
, 2000, 'Optical and electronic properties of GaNAs/GaAs structures', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 483 - 490, http://dx.doi.org/10.1109/COMMAD.2000.1022995
, 2000, 'Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD', in Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 419 - 422, http://dx.doi.org/10.1109/COMMAD.2000.1022979
, 2000, 'Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures', in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, pp. 31 - 34, http://dx.doi.org/10.1109/SIM.2000.939192
, 2000, 'Study of optical and electrical properties of GaSb/Al
, 2000, 'The effect of growth temperature on the structure of GaSb/GaAs quantum dots grown by MOCVD', in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, pp. 236 - 239, http://dx.doi.org/10.1109/SIM.2000.939234
, 2000, 'Zirconium mediated hydrogen outdiffusion from p-GaN', in MRS Internet Journal of Nitride Semiconductor Research, http://dx.doi.org/10.1557/s1092578300004774
, 2000, 'Zirconium mediated hydrogen outdiffusion from p-GaN', in Materials Research Society Symposium - Proceedings
, 1999, 'Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers', in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, WILEY-V C H VERLAG GMBH, FRANCE, MONTPELLIER, pp. 415 - 419, presented at
, 1998, 'Structure, surface morphology and optical properties of thin films of ZnS and CdS grown by atomic layer epitaxy', in ACTA PHYSICA POLONICA A, POLISH ACAD SCIENCES INST PHYSICS, POLAND, JASZOWIEC, pp. 579 - 582, presented at
, 1996, 'Design of quantum well materials for maximum change in refractive index with minimal loss', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 83 - 86
, 1996, 'Effect of component non-idealities on optical oversampled analog-to-digital converter resolution', in Proceedings of the International Symposium on Signal Processing and its Applications, ISSPA, pp. 853 - 855
, 1996, 'Electron transport in low temperature grown in GaAs', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 349 - 352
, 1996, 'Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n +GaAs Schottky diodes', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 345 - 348
, 1996, 'Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 426 - 429
, 1996, 'Influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 406 - 409
, 1996, 'Realistic continuum hole states in Si-SiGe quantum wells', in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 333 - 336
, 1990, 'THE OPTICAL AND ELECTRON-SPIN-RESONANCE DETERMINATION OF GERMANIUM POSITION IN NEUTRON TRANSMUTATION DOPED GAP', in Anastassakis EM; Joannopoulos JD (ed.), 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3, WORLD SCIENTIFIC PUBL CO PTE LTD, GREECE, THESSALONIKI, pp. 646 - 649, presented at
, 1989, 'RESONANCE SCATTERING ON SHALLOW DONOR STATE IN N-GAP DETECTED BY PHOTOCONDUCTIVITY EXPERIMENT', in ACTA PHYSICA POLONICA A, POLISH ACAD SCIENCES INST PHYSICS, POLAND, JASZOWIEC, pp. 261 - 265, presented at
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https://orcid.org/0000-0003-2470-7118