Select Publications

Conference Papers

Tundo S; Mazzer M; Barnham K; Ekins-Daukes N; Bushnell DB, 2001, 'EBIC investigation on the influence of misfit dislocations on the performance of strained InGaAs/GaAs MQW solar cells', in Dini L; Catalano M (ed.), PROCEEDINGS OF THE 5TH MULTINATIONAL CONGRESS ON ELECTRON MICROSCOPY, RINTON PRESS, INC, ITALY, LECCE, pp. 363 - 364, presented at 5th Multinational Congress on Electron Microscopy, ITALY, LECCE, 20 September 2001 - 25 September 2001

Tundo S; Mazzer M; Lazzarini L; Nasi L; Salviati G; Passaseo A; Barnham K; Rohr C; Ekins-Daukes N, 2001, 'Structural characterisation of strain balanced InxGa1-xAs/GaAs p-i-n structure', in Dini L; Catalano M (ed.), PROCEEDINGS OF THE 5TH MULTINATIONAL CONGRESS ON ELECTRON MICROSCOPY, RINTON PRESS, INC, ITALY, LECCE, pp. 365 - 366, presented at 5th Multinational Congress on Electron Microscopy, ITALY, LECCE, 20 September 2001 - 25 September 2001

Chatten AJ; Barnham KWJ; Blieske U; Ekins-Daukes NJ; Malik MA; Marques JL; Williams ML, 2000, 'Characterising quantum dot concentrators', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 865 - 868, http://dx.doi.org/10.1109/PVSC.2000.916020

Ekins-Daukes NJ; Zhang J; Bushneil DB; Barnham KWJ; Mazzer M; Roberts JS, 2000, 'Strain-balanced materials for high-efficiency solar cells', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1273 - 1276, http://dx.doi.org/10.1109/PVSC.2000.916122

Nelson J; Ballard I; Barnes J; Ekins-Daukes N; Barnham KWJ; Kluftinger BG; Tsui ESM; Foxon CT; Cheng TS; Roberts JS, 1997, 'Reduced radiative currents from GaAs/InGaAs and AlGaAs/GaAs p-i-n quantum well devices', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 919 - 922

Nelson J; Barnes J; Ekins-Daukes N; Barnham KWJ; Kluftinger B; Tsui ESM; Foxon CT; Cheng TS; Roberts JS, 1997, 'Reduced radiative currents from GaAs/InGaAs and AlGaAs/GaAs p-i-n quantum well devices', in Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997, pp. 413 - 416, http://dx.doi.org/10.1109/ISCS.1998.711674


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