By Associate Professor Joris Gerhard Keizer

Journal articles

Paffen MLJE; Keizer JG; De Winter GV; Arends AJ; Hendrikx AJM, 2008, 'A comparison of the physical properties of four new generation flexible ureteroscopes: (de)flection, flow properties, torsion stiffness, and optical characteristics', Journal of Endourology, 22, pp. 2227 - 2234, http://dx.doi.org/10.1089/end.2008.0371

Broks BHP; Keizer JG; Zijlmans RAB; Van Der Mullen JJAM, 2006, 'Modelling of a pinched cascaded arc light source using argon', Plasma Sources Science and Technology, 15, pp. 865 - 872, http://dx.doi.org/10.1088/0963-0252/15/4/033

Conference Papers

Keizer JG; Bozkurt M; Bocquel J; Koenraad PM; Mano T; Noda T; Sakoda K; Clark EC; Bichler M; Abstreiter G; Finley JJ; Lu W; Rohel T; Folliot H; Bertru N, 2010, 'Shape Control of QDs Studied by Cross-sectional Scanning Tunneling Microscopy', in JOURNAL OF THE KOREAN PHYSICAL SOCIETY, KOREAN PHYSICAL SOC, SOUTH KOREA, Seoul, pp. 1244 - 1250, presented at 30th International Conference on the Physics of Semiconductors (ICPS-30), SOUTH KOREA, Seoul, 25 July 2010 - 30 July 2010, http://dx.doi.org/10.3938/jkps.58.1244

Patents

Keizer J; Simmons M, 2023, A method for selective incorporation of dopant atoms in a semiconductive surface, Patent No. Australia - 2019262099; Austria, Europe, France, Netherlands, Spain, Sweden, Switzerland, United Kingdom - 3787998; Germany - 602019027521.8; India - 474003; Italy - 502023000024528; Taiwan - I815883

Simmons M; Keizer J, 2022, A method for selective incorporation of dopant atoms in a semiconductive surface, Patent No. United States - 11227768

Simmons M; Keizer J; Koch M, 2019, A method of fabricating a three dimensional electronic structure, Patent No. United States patent no. 10373914; Australia patent no. 2017203949, http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=10373914.PN.&OS=PN/10373914&RS=PN/10373914

Preprints

Thorvaldson I; Poulos D; Moehle CM; Misha SH; Edlbauer H; Reiner J; Geng H; Voisin B; Jones MT; Donnelly MB; Pena LF; Hill CD; Myers CR; Keizer JG; Chung Y; Gorman SK; Kranz L; Simmons MY, 2024, Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold, http://arxiv.org/abs/2404.08741v1

Donnelly MB; Keizer JG; Chung Y; Simmons MY, 2022, 3-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction, http://dx.doi.org/10.48550/arxiv.2211.02180

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2018, Benchmarking high fidelity single-shot readout of semiconductor qubits, http://dx.doi.org/10.48550/arxiv.1811.03630

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, Addressable electron spin resonance using donors and donor molecules in silicon, http://dx.doi.org/10.48550/arxiv.1807.10290

Broome MA; Watson TF; Keith D; Gorman SK; House MG; Keizer JG; Hile SJ; Baker W; Simmons MY, 2018, High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon, http://dx.doi.org/10.48550/arxiv.1807.10285

Gorman SK; Broome MA; House MG; Hile SJ; Keizer JG; Keith D; Watson TF; Baker WJ; Simmons MY, 2018, Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot, http://dx.doi.org/10.48550/arxiv.1807.10289

Broome MA; Gorman SK; House MG; Hile SJ; Keizer JG; Keith D; Hill CD; Watson TF; Baker WJ; Hollenberg LCL; Simmons MY, 2018, Two-Electron Spin Correlations in Precision Placed Donors in Silicon, http://dx.doi.org/10.48550/arxiv.1807.10295

Gorman SK; He Y; House MG; Keizer JG; Keith D; Fricke L; Hile SJ; Broome MA; Simmons MY, 2017, Tunneling statistics for analysis of spin-readout fidelity, http://dx.doi.org/10.48550/arxiv.1710.02243

Broome MA; Gorman SK; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, Mapping the Chemical Potential Landscape of a Triple Quantum Dot, http://dx.doi.org/10.48550/arxiv.1609.03381

Gorman SK; Broome MA; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, Extracting inter-dot tunnel couplings between few donor quantum dots in silicon, http://dx.doi.org/10.48550/arxiv.1606.00851

House MG; Peretz E; Keizer JG; Hile SJ; Simmons MY, 2014, Single-charge detection by an atomic precision tunnel junction, http://dx.doi.org/10.48550/arxiv.1403.5320

Jovanov V; Eissfeller T; Kapfinger S; Clark EC; Klotz F; Bichler M; Keizer JG; Koenraad PM; Brandt MS; Abstreiter G; Finley JJ, 2011, Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms, http://dx.doi.org/10.48550/arxiv.1112.2585

Keizer JG; Bozkurt M; Bocquel J; Koenraad PM; Mano T; Noda T; Sakoda K; Clark EC; Bichler M; Abstreiter G; Finley JJ; Lu W; Rohel T; Folliot H; Bertru N, 2010, Shape control of QDs studied by cross-sectional scanning tunneling microscopy, http://dx.doi.org/10.48550/arxiv.1011.3316

Giddings AD; Keizer JG; Hara M; Hamhuis GJ; Yuasa H; Fukuzawa H; Koenraad PM, 2010, Composition profiling InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunnelling microscopy, http://dx.doi.org/10.48550/arxiv.1010.5888

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