Select Publications
Journal articles
2010, 'Photovoltaics literature survey (No. 81)', Progress in Photovoltaics: Research and Applications, 18, pp. 559 - 561
,2010, 'Photovoltaics literature survey (No. 81)', Progress in Photovoltaics: Research and Applications, 18, pp. 559 - 561, http://dx.doi.org/10.1002/pip.1042
,2010, 'Photovoltaics literature survey (No. 82)', Progress in Photovoltaics: Research and Applications, 18, pp. 607 - 610
,2010, 'Practical factors lowering conversion efficiency of hot carrier solar cells', Applied Physics Express, 3, pp. 104301, http://dx.doi.org/10.1143/APEX.3.104301
,2010, 'Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 °C using magnetron sputtering', Applied Physics Letters, 96, pp. 261901, http://dx.doi.org/10.1063/1.3457864
,2010, 'Study of silicon quantum dots in a SiO2 matrix for energy selective contacts applications', Solar Energy Materials and Solar Cells, 94, pp. 1936 - 1941, http://dx.doi.org/10.1016/j.solmat.2010.06.024
,2010, 'Surface states induced high p-type conductivity in nanostructured thin film composed of Ge nanocrystals in SiO2 matrix', Applied Physics Letters, 97, pp. 132109, http://dx.doi.org/10.1063/1.3496031
,2009, 'Hot carrier solar cells operating under practical conditions', Journal of Applied Physics, 105, http://dx.doi.org/10.1063/1.3086447
,2009, 'Impact ionization and Auger recombination at high carrier temperature', Solar Energy Materials and Solar Cells, 93, pp. 797 - 802
,2009, 'Photovoltaics literature survey (No. 74)', Progress in Photovoltaics, 17, pp. 594 - 599
,2009, 'Progress on Hot Carrier Cells', Solar Energy Materials and Solar Cells, 93, pp. 713 - 719, http://dx.doi.org/10.1016/j.solmat.2008.09.034
,2008, 'Magnetism of isolated cadmium atoms in vacancy-associated sites in nickel', Physical Review - Section B - Condensed Matter, 78, pp. 1 - 7, http://dx.doi.org/10.1103/PhysRevB.78.014406
,2008, 'Selective energy contacts for hot carrier solar cells', Thin Solid Films, 516, pp. 6968 - 6973, http://dx.doi.org/10.1016/j.tsf.2007.12.031
,2007, 'The nature of nitrogen related point defects in common forms of InN', Journal of Applied Physics, 101, pp. 1 - 11
,2006, 'Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD', Journal of Crystal Growth, 288, pp. 241 - 246
,2006, 'Compositional and structural characterization of indium nitride using swift ions', Journal of Crystal Growth, 288, pp. 236 - 240, http://dx.doi.org/10.1016/j.jcrysgro.2005.12.004
,2006, 'The optimum heavy ion beam for the compositional analysis of indium nitride films', Nuclear Instruments and Methods in Physics Research Section B - Beam Interactions With Materials and Atoms, 249, pp. 257 - 260, http://dx.doi.org/10.1016/j.nimb.2006.04.010
,2005, 'Evidence for atomic scale disorder in indium nitride from perturbed angular correlation spectroscopy', Journal of Physics: Condensed Matter, 17, pp. 6037 - 6046
,2005, 'Implantation of the 111In/Cd Probe as InO− Ion for Radioisotope Tracer Studies', Hyperfine Interactions, 158, pp. 407 - 411, http://www.springerlink.com/content/yj42n45763w87j44/
,2005, 'Nitrogen depletion of indium nitride films during Elastic Recoil Detection analysis', Nuclear Instruments and Methods in Physics Research Section B - Beam Interactions With Materials and Atoms, 234, pp. 291 - 307
,2005, 'Non-stoichiometry and non-homogeneity in InN', Physica Status Solidi C - Conferences and Critical Reviews, 2, pp. 2263 - 2266
,2004, 'Accurate stoichiometric analysis of polycrystalline indium nitridefilms with elastic recoil detection', Current Applied Physics, 4, pp. 237 - 240
,2004, 'Nitrogen-rich indium nitride', Journal of Applied Physics, 95, pp. 6124 - 6128
,2004, 'Reliable ERD analysis of group-III nitrides despite severe nitrogen depletion', Nuclear Instruments and Methods in Physics Research Section B - Beam Interactions With Materials and Atoms, 219-220, pp. 686 - 692
,2004, 'The potential of ion beam techniques for the development of indiumnitride', Journal of Crystal Growth, 269, pp. 50 - 58
,2003, 'Detailed analysis of absorption data for indium nitride', Materials Science in Semiconductor Processing, 6, pp. 351 - 354
,2002, 'A study of indium nitride films grown under conditions resulting in apparent band-gaps from 0.7 eV to 2.3 eV', Materials Research Society Symposium - Proceedings, 743, pp. 707 - 712, http://dx.doi.org/10.1557/proc-743-l11.23
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