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Journal articles

Shrestha SK, 2010, 'Photovoltaics literature survey (No. 80)', Progress in Photovoltaics: Research and Applications, 18, pp. 481 - 484

Shrestha SK, 2010, 'Photovoltaics literature survey (No. 81)', Progress in Photovoltaics: Research and Applications, 18, pp. 559 - 561

Shrestha S, 2010, 'Photovoltaics literature survey (No. 81)', Progress in Photovoltaics Research and Applications, 18, pp. 559 - 561, http://dx.doi.org/10.1002/pip.1042

Shrestha SK, 2010, 'Photovoltaics literature survey (No. 82)', Progress in Photovoltaics: Research and Applications, 18, pp. 607 - 610

Takeda Y; Motohiro T; Konig D; Aliberti P; Feng Y; Conibeer G; Shrestha SK, 2010, 'Practical factors lowering conversion efficiency of hot carrier solar cells', Applied Physics Express, 3, pp. 104301, http://dx.doi.org/10.1143/APEX.3.104301

Zhang B; Shrestha SK; Green MA; Conibeer G, 2010, 'Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 °C using magnetron sputtering', Applied Physics Letters, 96, pp. 261901, http://dx.doi.org/10.1063/1.3457864

Aliberti P; Shrestha SK; Teuscher R; Zhang B; Green MA; Conibeer G, 2010, 'Study of silicon quantum dots in a SiO2 matrix for energy selective contacts applications', Solar Energy Materials and Solar Cells, 94, pp. 1936 - 1941, http://dx.doi.org/10.1016/j.solmat.2010.06.024

Zhang B; Shrestha SK; Green MA; Conibeer G, 2010, 'Surface states induced high p-type conductivity in nanostructured thin film composed of Ge nanocrystals in SiO2 matrix', Applied Physics Letters, 97, pp. 132109, http://dx.doi.org/10.1063/1.3496031

Takeda Y; Ito T; Motohiro T; Konig D; Shrestha SK; Conibeer GJ, 2009, 'Hot carrier solar cells operating under practical conditions', Journal of Applied Physics, 105, http://dx.doi.org/10.1063/1.3086447

Takeda Y; Ito T; Suzuki R; Motohiro T; Shrestha SK; Conibeer GJ, 2009, 'Impact ionization and Auger recombination at high carrier temperature', Solar Energy Materials and Solar Cells, 93, pp. 797 - 802

Shalav A; Shrestha SK, 2009, 'Photovoltaics literature survey (No. 74)', Progress in Photovoltaics, 17, pp. 594 - 599

Conibeer GJ; Ekins-Daukes NJ; Guillemoles J; Konig D; Cho EC; Jiang C; Shrestha SK; Green MA, 2009, 'Progress on Hot Carrier Cells', Solar Energy Materials and Solar Cells, 93, pp. 713 - 719, http://dx.doi.org/10.1016/j.solmat.2008.09.034

Zeitz W; Dogra R; Byrne AP; Shrestha SK; Edge AV; Timmers H, 2008, 'Magnetism of isolated cadmium atoms in vacancy-associated sites in nickel', Physical Review - Section B - Condensed Matter, 78, pp. 1 - 7, http://dx.doi.org/10.1103/PhysRevB.78.014406

Conibeer GJ; Jiang C; Konig D; Shrestha SK; Walsh TM; Green MA, 2008, 'Selective energy contacts for hot carrier solar cells', Thin Solid Films, 516, pp. 6968 - 6973, http://dx.doi.org/10.1016/j.tsf.2007.12.031

Butcher KS; Fernandes AJ; Chen PP; Wintrebert-Fouquet M; Timmers H; Shrestha SK; Hirshy H; Perks R; Usher BF, 2007, 'The nature of nitrogen related point defects in common forms of InN', Journal of Applied Physics, 101, pp. 1 - 11

Chen PP; Butcher KS; Wintrebert-Fouquet M; Wuhrer R; Phillips MR; Prince KE; Timmers H; Shrestha SK; Usher BF, 2006, 'Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD', Journal of Crystal Growth, 288, pp. 241 - 246

Timmers H; Butcher KS; Shrestha SK; Chen PP; Wintrebert-Fouquet M; Dogra R, 2006, 'Compositional and structural characterization of indium nitride using swift ions', Journal of Crystal Growth, 288, pp. 236 - 240, http://dx.doi.org/10.1016/j.jcrysgro.2005.12.004

Shrestha SK; Timmers H, 2006, 'The optimum heavy ion beam for the compositional analysis of indium nitride films', Nuclear Instruments and Methods in Physics Research Section B - Beam Interactions With Materials and Atoms, 249, pp. 257 - 260, http://dx.doi.org/10.1016/j.nimb.2006.04.010

Dogra R; Shrestha SK; Byrne AP; Ridgway MC; Edge AV; Vianden R; Penner J; Timmers H, 2005, 'Evidence for atomic scale disorder in indium nitride from perturbed angular correlation spectroscopy', Journal of Physics: Condensed Matter, 17, pp. 6037 - 6046

Shrestha SK; Timmers H; Byrne AP; Hutchison WD; Chaplin DH; Dogra R, 2005, 'Implantation of the 111In/Cd Probe as InO− Ion for Radioisotope Tracer Studies', Hyperfine Interactions, 158, pp. 407 - 411, http://www.springerlink.com/content/yj42n45763w87j44/

Shrestha SK; Timmers H; Butcher KS; Wintrebert-Fouquet M; Chen PP, 2005, 'Nitrogen depletion of indium nitride films during Elastic Recoil Detection analysis', Nuclear Instruments and Methods in Physics Research Section B - Beam Interactions With Materials and Atoms, 234, pp. 291 - 307

Scott K; Butcher A; Wintrebert-Fouquet M; Chen PP; Prince KE; Timmers H; Shrestha SK; Shubina TV; Ivanov SV; Wuhrer R; Phillips MR; Monemar B, 2005, 'Non-stoichiometry and non-homogeneity in InN', Physica Status Solidi C - Conferences and Critical Reviews, 2, pp. 2263 - 2266

Shrestha SK; Timmers H; Butcher KS; Wintrebert-Fouquet T, 2004, 'Accurate stoichiometric analysis of polycrystalline indium nitridefilms with elastic recoil detection', Current Applied Physics, 4, pp. 237 - 240

Butcher KS; Wintrebert-Fouquet M; Chen PP; Tansley TL; Dou HF; Shrestha SK; Timmers H; Kuball M; Prince K; Bradby JE, 2004, 'Nitrogen-rich indium nitride', Journal of Applied Physics, 95, pp. 6124 - 6128

Shrestha SK; Butcher KS; Wintrebert-Fouquet M; Timmers H, 2004, 'Reliable ERD analysis of group-III nitrides despite severe nitrogen depletion', Nuclear Instruments and Methods in Physics Research Section B - Beam Interactions With Materials and Atoms, 219-220, pp. 686 - 692

Timmers H; Shrestha SK; Byrne A, 2004, 'The potential of ion beam techniques for the development of indiumnitride', Journal of Crystal Growth, 269, pp. 50 - 58

Butcher KSA; Wintrebert-Fouquet M; Chen PP-T; Timmers H; Shrestha SK, 2003, 'Detailed analysis of absorption data for indium nitride', Materials Science in Semiconductor Processing, 6, pp. 351 - 354, http://dx.doi.org/10.1016/j.mssp.2003.07.004

Butcher KSA; Wintrebert-Fouquet M; Motlan ; Shrestha SK; Timmers H; Prince KE; Tansley TL, 2002, 'A study of indium nitride films grown under conditions resulting in apparent band-gaps from 0.7 eV to 2.3 eV', Materials Research Society Symposium Proceedings, 743, pp. 707 - 712, http://dx.doi.org/10.1557/proc-743-l11.23


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