Select Publications

Journal articles

Chen D; Vaqueiro Contreras M; Ciesla A; Hamer P; Hallam B; Abbott M; Chan C, 2020, 'Progress in the understanding of light- and elevated temperature-induced degradation in silicon solar cells: A review', Progress in Photovoltaics: Research and Applications, http://dx.doi.org/10.1002/pip.3362

Markevich VP; Vaqueiro-Contreras M; De Guzman JT; Coutinho J; Santos P; Crowe IF; Halsall MP; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2019, 'Boron–Oxygen Complex Responsible for Light-Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem', Physica Status Solidi (A) Applications and Materials Science, vol. 216, http://dx.doi.org/10.1002/pssa.201900315

Vaqueiro-Contreras M; Markevich VP; Coutinho J; Santos P; Crowe IF; Halsall MP; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2019, 'Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells', Journal of Applied Physics, vol. 125, http://dx.doi.org/10.1063/1.5091759

Markevich VP; Vaqueiro-Contreras M; Lastovskii SB; Murin LI; Halsall MP; Peaker AR, 2018, 'Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques', Journal of Applied Physics, vol. 124, http://dx.doi.org/10.1063/1.5053805

Vaqueiro-Contreras M; Bartlam C; Bonilla RS; Markevich VP; Halsall MP; Vijayaraghavan A; Peaker AR, 2018, 'Graphene oxide films for field effect surface passivation of silicon for solar cells', Solar Energy Materials and Solar Cells, vol. 187, pp. 189 - 193, http://dx.doi.org/10.1016/j.solmat.2018.08.002

Mullins J; Markevich VP; Vaqueiro-Contreras M; Grant NE; Jensen L; Jabłoński J; Murphy JD; Halsall MP; Peaker AR, 2018, 'Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states', Journal of Applied Physics, vol. 124, http://dx.doi.org/10.1063/1.5036718

Vaqueiro-Contreras M; Markevich VP; Mullins J; Halsall MP; Murin LI; Falster R; Binns J; Coutinho J; Peaker AR, 2018, 'Lifetime degradation of n-type Czochralski silicon after hydrogenation', Journal of Applied Physics, vol. 123, http://dx.doi.org/10.1063/1.5011351

Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR; Santos P; Coutinho J; Öberg S; Murin LI; Falster R; Binns J; Monakhov EV; Svensson BG, 2017, 'Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n-type Czochralski-grown silicon', Physica Status Solidi - Rapid Research Letters, vol. 11, http://dx.doi.org/10.1002/pssr.201700133

Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR; Santos P; Coutinho J; Öberg S; Murin LI; Falster R; Binns J; Monakhov EV; Svensson BG, 2017, 'Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon (Phys. Status Solidi RRL 8/2017)', physica status solidi (RRL) - Rapid Research Letters, vol. 11, pp. 1770342 - 1770342, http://dx.doi.org/10.1002/pssr.201770342

Conference Papers

Halsall MP; Vaqueiro Contreras M; Markevich VP; Coutinho J; Santos P; Crowe IF; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2020, 'Identification of a boron-oxygen complex as the origin of a non-radiative recombination process in silicon photodetectors and solar cells (Conference Presentation)', in Silicon Photonics XV, SPIE, presented at Silicon Photonics XV, 01 February 2020 - 06 February 2020, http://dx.doi.org/10.1117/12.2543773

Vaqueiro-Contreras M; Walton AS; Bartlam C; Byrne C; Bonilla RS; Markevich VP; Halsall MP; Vijayaraghavan A; Peaker AR, 2019, 'The surface passivation mechanism of graphene oxide for crystalline silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1931 - 1934, http://dx.doi.org/10.1109/PVSC40753.2019.8980620

Santos P; Coutinho J; Öberg S; Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR, 2017, 'Theory of a carbon-oxygen-hydrogen recombination center in n-type Si', in Physica Status Solidi (A) Applications and Materials Science, http://dx.doi.org/10.1002/pssa.201700309


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