By Dr Michelle Vaqueiro Contreras

Book Chapters

Contreras MV, 2024, 'Carrier-Induced Degradation', in Photovoltaic Solar Energy: From Fundamentals to Applications, Volume 2, pp. 103 - 122, http://dx.doi.org/10.1002/9781119578826.ch9

Contreras MV; Li J; Kim M; Green MA, 2023, 'Solar photovoltaic technologies for mitigating global climate change', in Handbook on Climate Change and Technology, Edward Elgar, pp. 58 - 81, http://dx.doi.org/10.4337/9781800882119.00013

Vaqueiro-Contreras M; Wright M; Chan C, 2021, 'Laser doping for rapid diffusion in silicon', in Hydrogen Passivation and Laser Doping for Silicon Solar Cells, Institution of Engineering and Technology, pp. 305 - 335, http://dx.doi.org/10.1049/pbpo134e_ch7

Chen R; Ciesla A; Vaqueiro-Contreras M; Chen D; Wright M; Hallam B; Peaker T, 2021, 'Negative impacts of hydrogen in silicon', in Hydrogen Passivation and Laser Doping for Silicon Solar Cells, pp. 249 - 303, http://dx.doi.org/10.1049/pbpo134e_ch6

Journal articles

Juhl MK; Heinz FD; Coletti G; Rougieux FE; Sun C; Contreras MV; Niewelt T; Krich J; Schubert MC, 2023, 'On the Conversion between Recombination Rates and Electronic Defect Parameters in Semiconductors', IEEE Journal of Photovoltaics, 13, pp. 524 - 534, http://dx.doi.org/10.1109/JPHOTOV.2023.3267173

Vaqueiro-Contreras M; Hallam B; Chan C, 2023, 'Review of Laser Doping and its Applications in Silicon Solar Cells', IEEE Journal of Photovoltaics, 13, pp. 373 - 384, http://dx.doi.org/10.1109/JPHOTOV.2023.3244367

Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon', IEEE Journal of Photovoltaics, 12, pp. 1369 - 1376, http://dx.doi.org/10.1109/JPHOTOV.2022.3195098

Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2022, 'Electronic Properties of the Boron-Oxygen Defect Precursor of the Light-Induced Degradation in Silicon', IEEE Journal of Photovoltaics, 12, pp. 1135 - 1141, http://dx.doi.org/10.1109/JPHOTOV.2022.3190769

Chen D; Vaqueiro Contreras M; Ciesla A; Hamer P; Hallam B; Abbott M; Chan C, 2021, 'Progress in the understanding of light- and elevated temperature-induced degradation in silicon solar cells: A review', Progress in Photovoltaics: Research and Applications, 29, pp. 1180 - 1201, http://dx.doi.org/10.1002/pip.3362

Markevich VP; Vaqueiro-Contreras M; De Guzman JT; Coutinho J; Santos P; Crowe IF; Halsall MP; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2019, 'Boron–Oxygen Complex Responsible for Light-Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem', Physica Status Solidi (A) Applications and Materials Science, 216, http://dx.doi.org/10.1002/pssa.201900315

Vaqueiro-Contreras M; Markevich VP; Coutinho J; Santos P; Crowe IF; Halsall MP; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2019, 'Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells', Journal of Applied Physics, 125, http://dx.doi.org/10.1063/1.5091759

Markevich VP; Vaqueiro-Contreras M; Lastovskii SB; Murin LI; Halsall MP; Peaker AR, 2018, 'Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques', Journal of Applied Physics, 124, http://dx.doi.org/10.1063/1.5053805

Vaqueiro-Contreras M; Bartlam C; Bonilla RS; Markevich VP; Halsall MP; Vijayaraghavan A; Peaker AR, 2018, 'Graphene oxide films for field effect surface passivation of silicon for solar cells', Solar Energy Materials and Solar Cells, 187, pp. 189 - 193, http://dx.doi.org/10.1016/j.solmat.2018.08.002

Mullins J; Markevich VP; Vaqueiro-Contreras M; Grant NE; Jensen L; Jabłoński J; Murphy JD; Halsall MP; Peaker AR, 2018, 'Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states', Journal of Applied Physics, 124, http://dx.doi.org/10.1063/1.5036718

Vaqueiro-Contreras M; Markevich VP; Mullins J; Halsall MP; Murin LI; Falster R; Binns J; Coutinho J; Peaker AR, 2018, 'Lifetime degradation of n-type Czochralski silicon after hydrogenation', Journal of Applied Physics, 123, http://dx.doi.org/10.1063/1.5011351

Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR; Santos P; Coutinho J; Öberg S; Murin LI; Falster R; Binns J; Monakhov EV; Svensson BG, 2017, 'Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n-type Czochralski-grown silicon', Physica Status Solidi - Rapid Research Letters, 11, http://dx.doi.org/10.1002/pssr.201700133

Vaqueiro‐Contreras M; Markevich VP; Halsall MP; Peaker AR; Santos P; Coutinho J; Öberg S; Murin LI; Falster R; Binns J; Monakhov EV; Svensson BG, 2017, 'Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon (Phys. Status Solidi RRL 8/2017)', physica status solidi (RRL) – Rapid Research Letters, 11, http://dx.doi.org/10.1002/pssr.201770342

Conference Papers

Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Deep Level Transient Spectroscopy Study of Float-zone Silicon Degradation under Light and Elevated Temperature', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0089221

Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 269 - 271, http://dx.doi.org/10.1109/PVSC43889.2021.9519027

Halsall MP; Vaqueiro Contreras M; Markevich VP; Coutinho J; Santos P; Crowe IF; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2020, 'Identification of a boron-oxygen complex as the origin of a non-radiative recombination process in silicon photodetectors and solar cells (Conference Presentation)', in Reed GT; Knights AP (ed.), Silicon Photonics XV, SPIE, pp. 33 - 33, presented at Silicon Photonics XV, 01 February 2020 - 06 February 2020, http://dx.doi.org/10.1117/12.2543773

Vaqueiro-Contreras M; Walton AS; Bartlam C; Byrne C; Bonilla RS; Markevich VP; Halsall MP; Vijayaraghavan A; Peaker AR, 2019, 'The surface passivation mechanism of graphene oxide for crystalline silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1931 - 1934, http://dx.doi.org/10.1109/PVSC40753.2019.8980620

Santos P; Coutinho J; Öberg S; Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR, 2017, 'Theory of a carbon-oxygen-hydrogen recombination center in n-type Si', in Physica Status Solidi (A) Applications and Materials Science, http://dx.doi.org/10.1002/pssa.201700309

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