By Dr Michelle Vaqueiro Contreras

Journal articles

Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon', IEEE Journal of Photovoltaics, 12, pp. 1369 - 1376, http://dx.doi.org/10.1109/JPHOTOV.2022.3195098

Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2022, 'Electronic Properties of the Boron-Oxygen Defect Precursor of the Light-Induced Degradation in Silicon', IEEE Journal of Photovoltaics, 12, pp. 1135 - 1141, http://dx.doi.org/10.1109/JPHOTOV.2022.3190769

Chen D; Vaqueiro Contreras M; Ciesla A; Hamer P; Hallam B; Abbott M; Chan C, 2021, 'Progress in the understanding of light- and elevated temperature-induced degradation in silicon solar cells: A review', Progress in Photovoltaics: Research and Applications, 29, pp. 1180 - 1201, http://dx.doi.org/10.1002/pip.3362

Markevich VP; Vaqueiro-Contreras M; De Guzman JT; Coutinho J; Santos P; Crowe IF; Halsall MP; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2019, 'Boron–Oxygen Complex Responsible for Light-Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem', Physica Status Solidi (A) Applications and Materials Science, 216, http://dx.doi.org/10.1002/pssa.201900315

Vaqueiro-Contreras M; Markevich VP; Coutinho J; Santos P; Crowe IF; Halsall MP; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2019, 'Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells', Journal of Applied Physics, 125, http://dx.doi.org/10.1063/1.5091759

Markevich VP; Vaqueiro-Contreras M; Lastovskii SB; Murin LI; Halsall MP; Peaker AR, 2018, 'Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques', Journal of Applied Physics, 124, http://dx.doi.org/10.1063/1.5053805

Vaqueiro-Contreras M; Bartlam C; Bonilla RS; Markevich VP; Halsall MP; Vijayaraghavan A; Peaker AR, 2018, 'Graphene oxide films for field effect surface passivation of silicon for solar cells', Solar Energy Materials and Solar Cells, 187, pp. 189 - 193, http://dx.doi.org/10.1016/j.solmat.2018.08.002

Mullins J; Markevich VP; Vaqueiro-Contreras M; Grant NE; Jensen L; Jabłoński J; Murphy JD; Halsall MP; Peaker AR, 2018, 'Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states', Journal of Applied Physics, 124, http://dx.doi.org/10.1063/1.5036718

Vaqueiro-Contreras M; Markevich VP; Mullins J; Halsall MP; Murin LI; Falster R; Binns J; Coutinho J; Peaker AR, 2018, 'Lifetime degradation of n-type Czochralski silicon after hydrogenation', Journal of Applied Physics, 123, http://dx.doi.org/10.1063/1.5011351

Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR; Santos P; Coutinho J; Öberg S; Murin LI; Falster R; Binns J; Monakhov EV; Svensson BG, 2017, 'Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n-type Czochralski-grown silicon', Physica Status Solidi - Rapid Research Letters, 11, http://dx.doi.org/10.1002/pssr.201700133

Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR; Santos P; Coutinho J; Öberg S; Murin LI; Falster R; Binns J; Monakhov EV; Svensson BG, 2017, 'Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon (Phys. Status Solidi RRL 8/2017)', physica status solidi (RRL) - Rapid Research Letters, 11, pp. 1770342 - 1770342, http://dx.doi.org/10.1002/pssr.201770342

Back to profile page