By Dr Michelle Vaqueiro Contreras

Conference Papers

Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Deep Level Transient Spectroscopy Study of Float-zone Silicon Degradation under Light and Elevated Temperature', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0089221

Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 269 - 271, http://dx.doi.org/10.1109/PVSC43889.2021.9519027

Halsall MP; Vaqueiro Contreras M; Markevich VP; Coutinho J; Santos P; Crowe IF; Hawkins I; Lastovskii SB; Murin LI; Peaker AR, 2020, 'Identification of a boron-oxygen complex as the origin of a non-radiative recombination process in silicon photodetectors and solar cells (Conference Presentation)', in Reed GT; Knights AP (ed.), Silicon Photonics XV, SPIE, presented at Silicon Photonics XV, 01 February 2020 - 06 February 2020, http://dx.doi.org/10.1117/12.2543773

Vaqueiro-Contreras M; Walton AS; Bartlam C; Byrne C; Bonilla RS; Markevich VP; Halsall MP; Vijayaraghavan A; Peaker AR, 2019, 'The surface passivation mechanism of graphene oxide for crystalline silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1931 - 1934, http://dx.doi.org/10.1109/PVSC40753.2019.8980620

Santos P; Coutinho J; Öberg S; Vaqueiro-Contreras M; Markevich VP; Halsall MP; Peaker AR, 2017, 'Theory of a carbon-oxygen-hydrogen recombination center in n-type Si', in Physica Status Solidi (A) Applications and Materials Science, http://dx.doi.org/10.1002/pssa.201700309

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