By Dr Nard Dumoulin Stuyck

Journal articles

Hansen I; Seedhouse AE; Serrano S; Nickl A; Feng MK; Huang JY; Tanttu T; Dumoulin Stuyck N; Lim WH; Hudson FE; Itoh KM; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2024, 'Entangling gates on degenerate spin qubits dressed by a global field', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-52010-4

Huang JY; Su RY; Lim WH; Feng MK; van Straaten B; Severin B; Gilbert W; Dumoulin Stuyck N; Tanttu T; Serrano S; Cifuentes JD; Hansen I; Seedhouse AE; Vahapoglu E; Leon RCC; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Escott CC; Ares N; Bartlett SD; Morello A; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2024, 'High-fidelity spin qubit operation and algorithmic initialization above 1 K', Nature, 627, pp. 772 - 777, http://dx.doi.org/10.1038/s41586-024-07160-2

Dumoulin Stuyck N; Seedhouse AE; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson F; Itoh KM; Laucht A; Lim WH; Yang CH; Saraiva A; Dzurak AS, 2024, 'Silicon spin qubit noise characterization using real-time feedback protocols and wavelet analysis', Applied Physics Letters, 124, http://dx.doi.org/10.1063/5.0179958

Tanttu T; Lim WH; Huang JY; Dumoulin Stuyck N; Gilbert W; Su RY; Feng MK; Cifuentes JD; Seedhouse AE; Seritan SK; Ostrove CI; Rudinger KM; Leon RCC; Huang W; Escott CC; Itoh KM; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Blume-Kohout R; Bartlett SD; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2024, 'Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots', Nature Physics, http://dx.doi.org/10.1038/s41567-024-02614-w

Dumoulin Stuyck NI; Mohiyaddin FA; Li R; Heyns M; Govoreanu B; Radu IP, 2021, 'Low dephasing and robust micromagnet designs for silicon spin qubits', Applied Physics Letters, 119, http://dx.doi.org/10.1063/5.0059939

Stuyck ND; Li R; Kubicek S; Mohiyaddin FA; Jussot J; Chan BT; Simion G; Govoreanu B; Heyns M; Radu I, 2020, 'An Integrated Silicon MOS Single-Electron Transistor Charge Sensor for Spin-Based Quantum Information Processing', IEEE Electron Device Letters, 41, pp. 1253 - 1256, http://dx.doi.org/10.1109/LED.2020.3001291

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