By Dr Nard Dumoulin Stuyck

Journal articles

Hansen I; Seedhouse AE; Serrano S; Nickl A; Feng MK; Huang JY; Tanttu T; Dumoulin Stuyck N; Lim WH; Hudson FE; Itoh KM; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2024, 'Entangling gates on degenerate spin qubits dressed by a global field', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-52010-4

Huang JY; Su RY; Lim WH; Feng MK; van Straaten B; Severin B; Gilbert W; Dumoulin Stuyck N; Tanttu T; Serrano S; Cifuentes JD; Hansen I; Seedhouse AE; Vahapoglu E; Leon RCC; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Escott CC; Ares N; Bartlett SD; Morello A; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2024, 'High-fidelity spin qubit operation and algorithmic initialization above 1 K', Nature, 627, pp. 772 - 777, http://dx.doi.org/10.1038/s41586-024-07160-2

Dumoulin Stuyck N; Seedhouse AE; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson F; Itoh KM; Laucht A; Lim WH; Yang CH; Saraiva A; Dzurak AS, 2024, 'Silicon spin qubit noise characterization using real-time feedback protocols and wavelet analysis', Applied Physics Letters, 124, http://dx.doi.org/10.1063/5.0179958

Tanttu T; Lim WH; Huang JY; Dumoulin Stuyck N; Gilbert W; Su RY; Feng MK; Cifuentes JD; Seedhouse AE; Seritan SK; Ostrove CI; Rudinger KM; Leon RCC; Huang W; Escott CC; Itoh KM; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Blume-Kohout R; Bartlett SD; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2024, 'Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots', Nature Physics, http://dx.doi.org/10.1038/s41567-024-02614-w

Dumoulin Stuyck NI; Mohiyaddin FA; Li R; Heyns M; Govoreanu B; Radu IP, 2021, 'Low dephasing and robust micromagnet designs for silicon spin qubits', Applied Physics Letters, 119, http://dx.doi.org/10.1063/5.0059939

Stuyck ND; Li R; Kubicek S; Mohiyaddin FA; Jussot J; Chan BT; Simion G; Govoreanu B; Heyns M; Radu I, 2020, 'An Integrated Silicon MOS Single-Electron Transistor Charge Sensor for Spin-Based Quantum Information Processing', IEEE Electron Device Letters, 41, pp. 1253 - 1256, http://dx.doi.org/10.1109/LED.2020.3001291

Conference Papers

Stuyck ND; Feng MK; Lim WH; Ramirez SS; Escott CC; Botzem T; Tanttu T; Yang CH; Saraiva A; Laucht A; Kubicek S; Jussot J; Beyne S; Raes B; Li R; Godfrin C; Wan D; De Greve K; Dzurak AS, 2024, 'Demonstration of 99.9% single qubit control fidelity of a silicon quantum dot spin qubit made in a 300 mm foundry process', in 2024 IEEE Silicon Nanoelectronics Workshop, SNW 2024, pp. 11 - 12, http://dx.doi.org/10.1109/SNW63608.2024.10639218

Stuyck NID; Li R; Godfrin C; Elsayed A; Kubicek S; Jussot J; Chan BT; Mohiyaddin FA; Shehata M; Simion G; Canvel Y; Goux L; Heyns M; Govoreanu B; Radu IP, 2021, 'Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process', in 2021 Symposium on VLSI Circuits, IEEE, pp. 1 - 2, presented at 2021 Symposium on VLSI Circuits, 13 June 2021 - 19 June 2021, http://dx.doi.org/10.23919/vlsicircuits52068.2021.9492427

Li R; Stuyck NID; Kubicek S; Jussot J; Chan BT; Mohiyaddin FA; Elsayed A; Shehata M; Simion G; Godfrin C; Canvel Y; Ivanov T; Goux L; Govoreanu B; Radu IP, 2020, 'A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration', in 2020 IEEE International Electron Devices Meeting (IEDM), IEEE, pp. 38.3.1 - 38.3.4, presented at 2020 IEEE International Electron Devices Meeting (IEDM), 12 December 2020 - 18 December 2020, http://dx.doi.org/10.1109/iedm13553.2020.9371956

Mohiyaddin FA; Chan BT; Ivanov T; Spessot A; Matagne P; Lee J; Govoreanu B; Raduimec IP; Simion G; Stuyck NID; Li R; Ciubotaru F; Eneman G; Bufler FM; Kubicek S; Jussot J, 2019, 'Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices', in 2019 IEEE International Electron Devices Meeting (IEDM), IEEE, pp. 39.5.1 - 39.5.4, presented at 2019 IEEE International Electron Devices Meeting (IEDM), 07 December 2019 - 11 December 2019, http://dx.doi.org/10.1109/iedm19573.2019.8993541

Govoreanu B; Mocuta D; Lee J; Radu IP; Kubicek S; Jussot J; Chan BT; Dumoulin-Stuyck NI; Mohiyaddin FA; Li R; Simion G; Ivanov T, 2019, 'Moving Spins From Lab to Fab: A Silicon-Based Platform for Quantum Computing Device Technologies', in 2019 Silicon Nanoelectronics Workshop (SNW), IEEE, pp. 1 - 2, presented at 2019 Silicon Nanoelectronics Workshop (SNW), 09 June 2019 - 10 June 2019, http://dx.doi.org/10.23919/snw.2019.8782903

Preprints

Steinacker P; Stuyck ND; Lim WH; Tanttu T; Feng M; Nickl A; Serrano S; Candido M; Cifuentes JD; Hudson FE; Chan KW; Kubicek S; Jussot J; Canvel Y; Beyne S; Shimura Y; Loo R; Godfrin C; Raes B; Baudot S; Wan D; Laucht A; Yang CH; Saraiva A; Escott CC; Greve KD; Dzurak AS, 2024, A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations, http://arxiv.org/abs/2410.15590v2

Stuyck ND; Saraiva A; Gilbert W; Pardo JC; Li R; Escott CC; Greve KD; Voinigescu S; Reilly DJ; Dzurak AS, 2024, CMOS compatibility of semiconductor spin qubits, http://arxiv.org/abs/2409.03993v1

Hansen I; Seedhouse AE; Serrano S; Nickl A; Feng M; Huang JY; Tanttu T; Stuyck ND; Lim WH; Hudson FE; Itoh KM; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2023, Entangling gates on degenerate spin qubits dressed by a global field, http://dx.doi.org/10.1038/s41467-024-52010-4

Stuyck ND; Seedhouse AE; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson F; Itoh KM; Laucht A; Lim WH; Yang CH; Saraiva A; Dzurak AS, 2023, Real-time feedback protocols for optimizing fault-tolerant two-qubit gate fidelities in a silicon spin system, http://dx.doi.org/10.1063/5.0179958

Seedhouse AE; Stuyck ND; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson FE; Itoh KM; Laucht A; Lim WH; Yang CH; Dzurak AS; Saraiva A, 2023, Spatio-temporal correlations of noise in MOS spin qubits, http://arxiv.org/abs/2309.12542v2

Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2023, Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays, http://dx.doi.org/10.1103/PhysRevB.110.125414

Huang JY; Su RY; Lim WH; Feng M; Straaten BV; Severin B; Gilbert W; Stuyck ND; Tanttu T; Serrano S; Cifuentes JD; Hansen I; Seedhouse AE; Vahapoglu E; Abrosimov NV; Pohl H-J; Thewalt MLW; Hudson FE; Escott CC; Ares N; Bartlett SD; Morello A; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2023, High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin, http://dx.doi.org/10.1038/s41586-024-07160-2

Su RY; Huang JY; Stuyck ND; Feng MK; Gilbert W; Evans TJ; Lim WH; Hudson FE; Chan KW; Huang W; Itoh KM; Harper R; Bartlett SD; Yang CH; Laucht A; Saraiva A; Tanttu T; Dzurak AS, 2023, Characterizing non-Markovian Quantum Process by Fast Bayesian Tomography, http://arxiv.org/abs/2307.12452v2

Tanttu T; Lim WH; Huang JY; Stuyck ND; Gilbert W; Su RY; Feng M; Cifuentes JD; Seedhouse AE; Seritan SK; Ostrove CI; Rudinger KM; Leon RCC; Huang W; Escott CC; Itoh KM; Abrosimov NV; Pohl H-J; Thewalt MLW; Hudson FE; Blume-Kohout R; Bartlett SD; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2023, Assessment of error variation in high-fidelity two-qubit gates in silicon, http://dx.doi.org/10.1038/s41567-024-02614-w

Stuyck NID; Mohiyaddin FA; Li R; Heyns M; Govoreanu B; Radu IP, 2021, Low dephasing and robust micromagnet designs for silicon spin qubits, http://dx.doi.org/10.1063/5.0059939

Stuyck NID; Li R; Godfrin C; Elsayed A; Kubicek S; Jussot J; Chan BT; Mohiyaddin FA; Shehata M; Simion G; Canvel Y; Goux L; Heyns M; Govoreanu B; Radu IP, 2021, Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process, http://dx.doi.org/10.23919/VLSICircuits52068.2021.9492427

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