By Dr Nard Dumoulin Stuyck

Preprints

Steinacker P; Stuyck ND; Lim WH; Tanttu T; Feng M; Nickl A; Serrano S; Candido M; Cifuentes JD; Hudson FE; Chan KW; Kubicek S; Jussot J; Canvel Y; Beyne S; Shimura Y; Loo R; Godfrin C; Raes B; Baudot S; Wan D; Laucht A; Yang CH; Saraiva A; Escott CC; Greve KD; Dzurak AS, 2024, A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations, http://arxiv.org/abs/2410.15590v2

Stuyck ND; Saraiva A; Gilbert W; Pardo JC; Li R; Escott CC; Greve KD; Voinigescu S; Reilly DJ; Dzurak AS, 2024, CMOS compatibility of semiconductor spin qubits, http://arxiv.org/abs/2409.03993v1

Hansen I; Seedhouse AE; Serrano S; Nickl A; Feng M; Huang JY; Tanttu T; Stuyck ND; Lim WH; Hudson FE; Itoh KM; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2023, Entangling gates on degenerate spin qubits dressed by a global field, http://dx.doi.org/10.1038/s41467-024-52010-4

Stuyck ND; Seedhouse AE; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson F; Itoh KM; Laucht A; Lim WH; Yang CH; Saraiva A; Dzurak AS, 2023, Real-time feedback protocols for optimizing fault-tolerant two-qubit gate fidelities in a silicon spin system, http://dx.doi.org/10.1063/5.0179958

Seedhouse AE; Stuyck ND; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson FE; Itoh KM; Laucht A; Lim WH; Yang CH; Dzurak AS; Saraiva A, 2023, Spatio-temporal correlations of noise in MOS spin qubits, http://arxiv.org/abs/2309.12542v2

Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2023, Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays, http://dx.doi.org/10.1103/PhysRevB.110.125414

Huang JY; Su RY; Lim WH; Feng M; Straaten BV; Severin B; Gilbert W; Stuyck ND; Tanttu T; Serrano S; Cifuentes JD; Hansen I; Seedhouse AE; Vahapoglu E; Abrosimov NV; Pohl H-J; Thewalt MLW; Hudson FE; Escott CC; Ares N; Bartlett SD; Morello A; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2023, High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin, http://dx.doi.org/10.1038/s41586-024-07160-2

Su RY; Huang JY; Stuyck ND; Feng MK; Gilbert W; Evans TJ; Lim WH; Hudson FE; Chan KW; Huang W; Itoh KM; Harper R; Bartlett SD; Yang CH; Laucht A; Saraiva A; Tanttu T; Dzurak AS, 2023, Characterizing non-Markovian Quantum Process by Fast Bayesian Tomography, http://arxiv.org/abs/2307.12452v2

Tanttu T; Lim WH; Huang JY; Stuyck ND; Gilbert W; Su RY; Feng M; Cifuentes JD; Seedhouse AE; Seritan SK; Ostrove CI; Rudinger KM; Leon RCC; Huang W; Escott CC; Itoh KM; Abrosimov NV; Pohl H-J; Thewalt MLW; Hudson FE; Blume-Kohout R; Bartlett SD; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2023, Assessment of error variation in high-fidelity two-qubit gates in silicon, http://dx.doi.org/10.1038/s41567-024-02614-w

Stuyck NID; Mohiyaddin FA; Li R; Heyns M; Govoreanu B; Radu IP, 2021, Low dephasing and robust micromagnet designs for silicon spin qubits, http://dx.doi.org/10.1063/5.0059939

Stuyck NID; Li R; Godfrin C; Elsayed A; Kubicek S; Jussot J; Chan BT; Mohiyaddin FA; Shehata M; Simion G; Canvel Y; Goux L; Heyns M; Govoreanu B; Radu IP, 2021, Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process, http://dx.doi.org/10.23919/VLSICircuits52068.2021.9492427

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