By Dr Ran Chen

Conference Presentations

Chen D; Hamer P; Kim M; Bourett-Sicotte G; Liu S; Ciesla A; Chan C; Chen R; Fung TH; Vargas C; Ye Q; Abbott M; Hallam BJ; Wenham SR, 2018, 'Hydrogen Induced Degradation : A Possible Mechanism for Light and Elevated Temperature Induced Degradation (LeTID) in n-type Silicon', presented at 8th International Conference on Crystalline Silicon Photovoltaics, Lausanne Switzerland, 19 March 2018 - 18 May 2018, http://dx.doi.org/10.1016/j.solmat.2018.05.034

Chen D; Abbott M; Chan C; Chen R; Ciesla A; Hallam B; Kim K; kim M; liu S; Samadi A; Wenham S, 2017, 'New insights into LeTID: Degradation of multi-crystalline silicon PERC Cells', presented at PVQAT TG13 Cell Task Force Technical Committee, Wuxi, China, 21 September 2017 - 22 September 2017

Patents

Wenham S; Shi Z; Fung T; Abbott M; Mai L; Hallam B; Ciesla A; Chan C; Chen R; Kim M; Bagnall D; Payne D; Chong C; Chen D, 2023, Advanced hydrogen passivation that mitigates hydrogen-induced recombination (HIR) and surface passivation deterioration in PV devices, Patent No. China - 109983561; South Korea - 10-2750219;

Ciesla A; Chen D; Shi Z; Fung T; Abbott M; Mai L; Hallam B; Chan C; Chen R; Kim M; Bagnall D; Payne D; Chong C; Wenham S, 2023, A method for improving wafer performance for photovoltaic devices, Patent No. China - 109983559; South Korea - 2519569

Ciesla A; Hallam B; Chan C; Chong C; Chen D; Bagnall D; Payne D; Mai L; Abbott M; Kim M; Chen R; Wenham S; Fung T; Shi Z, 2021, A method for improving wafer performance for photovoltaic devices, Patent No. US pat no. 10910509

Ciesla A; Wenham S; Hallam B; Chan C; Chong CM; Chen R; Abbott M; Payne D, 2019, A method for processing silicon material, Patent No. 10461212; Chine 2021 pat no. ZL201680015469.X, http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=10461212.PN.&OS=PN/10461212&RS=PN/10461212

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