By Dr Wayne Hutchison

Preprints

Radhanpura K; Hargreaves S; Lewis RA; Krüger H; Rey E; Si P-Z; Söhnel T; Jovic V; Metson JB; Waterhouse GIN; Abiona AA; Kemp WJ; Byrne AP; Ridgeway MC; Timmers H; Cashion JD; Gates WP; Greaves TL; Dorjkhaidav O; Constable E; Gladkis LG; Scarvell JM; Smith PN; Hamer CJ; Rojas O; Oitmaa J; Hillman B; Norén L; Goossens DJ; Kessler P; Vianden R; Leslie JW; Kluth P; Liu Y; Malik AE; Hutchison WD; Nishimura K; Elliman RG; Harris AB; Sushkov OP; Warner JA; Kiss AE; Young J; O'Brien CC; Micolich AP, 2011, Proceedings of the 35th Annual Australian/New Zealand Condensed Matter and Materials Meeting, http://dx.doi.org/10.48550/arxiv.1107.3617

Alexander LK; Suwuntanasarn N; Hutchison WD, 2010, Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures, http://dx.doi.org/10.48550/arxiv.1009.4240

Hutchison WD; Spizzirri PG; Hoehne F; Brandt MS, 2010, Electrically Detected Magnetic Resonance Applied to the Study of Near Surface Electron Donors in Silicon, http://dx.doi.org/10.48550/arxiv.1002.4071

Hutchison WD; Alexander LK; Suwuntanasarn N; Milford GN, 2010, Pulsed ESR Measurement of Coherence Times in Si:P at Very Low Temperatures, http://dx.doi.org/10.48550/arxiv.1002.4069

Spizzirri PG; Hutchison WD; Stavrias N; McCallum JC; Suwuntanasarn N; Alexander LK; Prawer S, 2010, ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface, http://dx.doi.org/10.48550/arxiv.1002.1764

McCamey DR; Huebl H; Brandt MS; Hutchison WD; McCallum JC; Clark RG; Hamilton AR, 2006, Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures, http://dx.doi.org/10.48550/arxiv.cond-mat/0605516

Back to profile page