By Dr Yu-Ling Hsueh

Preprints

Krishnan R; Gan BY; Hsueh Y-L; Huq AMS-E; Kenny J; Rahman R; Koh TS; Simmons MY; Weber B, 2024, Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon, http://dx.doi.org/10.48550/arxiv.2404.15762

Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh Y-L; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2023, Impact of measurement backaction on nuclear spin qubits in silicon, http://dx.doi.org/10.48550/arxiv.2310.12656

Krishnan R; Biswas S; Hsueh Y-L; Ma H; Rahman R; Weber B, 2023, Spin-valley locking for in-gap quantum dots in a MoS2 transistor, http://dx.doi.org/10.48550/arxiv.2306.13542

Sun W; Bharadwaj S; Yang L-P; Hsueh Y-L; Wang Y; Jiao D; Rahman R; Jacob Z, 2022, Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations, http://dx.doi.org/10.48550/arxiv.2207.09441

Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, http://dx.doi.org/10.48550/arxiv.2105.02904

Ameen T; Ilatikhameneh H; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Wenner BR; Rahman R; Klimeck G, 2015, Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots, http://dx.doi.org/10.48550/arxiv.1502.07726

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, http://dx.doi.org/10.48550/arxiv.1501.05669

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