By Professor Alistair Sproul

Journal articles

Sproul AB, 2007, 'Erratum to `Derivation of the solar geometric relationships using vector analysis`. [Renew. Energy 32 (2007) 1187-1205] (DOI:10.1016/j.renene.2006.05.001)', Renewable Energy, 32, pp. 2642 - 2642, http://dx.doi.org/10.1016/j.renene.2007.05.039

Corkish RP; Wenham SR; Cotter JE; Sproul AB; Aberle AG; Bruce AG; Green MA, 2006, 'Materials Engineering Education in two new engineering degree programs at the centre for photovoltaic engineering', Journal of Materials Education, 28, pp. 57 - 68

Straub A; Gebs R; Habenicht H; Trunk S; Bardos RA; Sproul AB; Aberle AG, 2005, 'Impedance analysis: A powerful method for the determination of the doping concentration and built-in potential of nonideal semiconductor p-n diodes', Journal of Applied Physics, 97, pp. 083703-1 - 083703-8

Aberle AG; Straub A; Widenborg P; Sproul AB; Huang Y; Campbell PR, 2005, 'Polycrystalline silicon thin-film solar cells on glass by aluminium-induced crystallisation and subsequent ion-assisted deposition (ALICIA)', Progress in Photovoltaics, 13, pp. 37 - 47

Aberle AG; Widenborg P; Song DY; Straub A; Terry M; Walsh TM; Sproul AB; Campbell PR; Inns D; Beilby B; Griffin M; Weber JW; Huang Y; Kunz O; Gebs R; Martin-Brune F; Barroux V; Wenham SR, 2005, 'Recent advances in polycrystalline silicon thin-film solar cells on glass at UNSW', IEEE Photovoltaic Specialists Conference, pp. 877 - 882

Straub A; Inns D; Kunz O; Terry M; Widenborg P; Sproul AB; Aberle AG, 2005, 'Towards 400 mV ALICIA thin-film silicon solar cells on glass', IEEE Photovoltaic Specialists Conference, pp. 1221 - 1224

Richards BS; Lambertz A; Sproul AB, 2004, 'Determination of the optical properties of non-uniformly thick non-hydrogenated sputtered silicon thin films on glass', Thin Solid Films, 460, pp. 247 - 255

Straub A; Widenborg P; Sproul AB; Huang Y; Harder NP; Aberle AG, 2004, 'Fast and non-destructive assessment of epitaxial quality of polycrystalline silicon films on glass by optical measurements', Journal of Crystal Growth, 265, pp. 168 - 173

Harder NP; Sproul AB, 2003, 'Effects of Sheet Resistance and Contact Shading on the Characterization of Solar Cells by Open-Circuit Voltage Measurements', Journal of Applied Physics, 94, pp. 2473 - 2479

Widenborg P; Neuhaus DH; Campbell PR; Sproul AB; Aberle AG, 2002, 'Back electrode formation for poly-Si thin-film solar cells on glass having AIC-grown seeding layer', Solar Energy Materials and Solar Cells, 74, pp. 305 - 314

Neuhaus DH; Harder NP; Oelting S; Bardos RA; Sproul AB; Widenborg P; Aberle AG, 2002, 'Dependence of the Recombination in Thin-film Si Solar Cells Grown by Ion-Assisted Deposition on the Crystallographic Orientation of the Substrate', Solar Energy Materials and Solar Cells, 74, pp. 225 - 232

Nast O; Puzzer T; Koschier L; Sproul AB; Wenham SR, 1998, 'Aluminium-induced crystallization of amorphous silicon on glass substrates above andbelow the autectic temperature', Applied Physics Letters, pp. 3214 - 3216

Corkish RP; Puzzer T; Sproul AB; Luke KL, 1998, 'Quantitative interpretation of electron-beam-induced current grain boundarycontrast profiles with application to silicon', Journal of Applied Physics, pp. 5473 - 5481

Honsberg CB; Edmiston S; Koschier L; Wenham SR; Sproul AB; Green MA, 1996, 'Capitalizing on two dimensional minority carrier injection in silicon solar cell design', Solar Energy Materials and Solar Cells, 41-42, pp. 183 - 193, http://dx.doi.org/10.1016/0927-0248(95)00115-8

Zheng GF; Zhang WZ; Gross M; Sproul AB; Wenham SR; Green MA; Shi Z, 1996, '16.4% efficient thin acative layer silicon solar cell grown by liquid ophase epitaxy', Solar Energy Materials and Solar Cells, pp. 231 - 238

Edminston SA; Heiser GA; Sproul AB; Green MA, 1996, 'Improved modelling of grain boundary recombination in bulk and p-n junction regions of polycrystalline silicon solar cells', Journal of Applied Physics, pp. 6783 - 6795

Edminston SA; Sproul AB; Green MA; Wenham SR, 1995, 'Modelling of thin-film crystalline silicon parallel multi-junction solar cells', Progress in Photovoltaics, pp. 333 - 350

Simonian AW; Sproul AB; Shi Z; Gauja E, 1995, 'Observation of Fano resonance in heavily doped p-type silicon at room temperature', Physical Review - Section B - Condensed Matter, pp. 5672 - 5674

Sproul AB; Shi Z; Zhao J; Wang A; Tang YH; Yun F; Young T; Huang Y; Edmiston S; Wenham SR; Green MA, 1994, 'Characterization and analysis of multilayer solar cells', Conference Record of the IEEE Photovoltaic Specialists Conference, 2, pp. 1410 - 1412

Sproul AB, 1994, 'Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors', Journal of Applied Physics, 76, pp. 2851 - 2854, http://dx.doi.org/10.1063/1.357521

Glunz SW; Sproul AB; Warta W; Wettling W, 1994, 'Injection-level-dependent recombination velocities at the Si-SiO 2 interface for various dopant concentrations', Journal of Applied Physics, 75, pp. 1611 - 1615, http://dx.doi.org/10.1063/1.356399

Sproul AB; Edmiston S; Wenham SR; Heiser GH; Green MA, 1994, 'Innovative structures for thin film crystalline silicon solar cells to give high efficiencies from low quality silicon', Conference Record of the IEEE Photovoltaic Specialists Conference, 2, pp. 1563 - 1566

Warta W; Glunz SW; Sproul AB; Lautenschlager H; Reis I; Schindler R, 1994, 'Properties of Multicrystalline Silicon Heat Treated by Classical and Rapid Thermal Processing', Solid State Phenomena, 37-38, pp. 415 - 420, http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.415

Sproul AB; Green MA, 1993, 'Intrinsic carrier concentration and minority-carrier mobility of silicon from 77 to 300 K', Journal of Applied Physics, 73, pp. 1214 - 1225, http://dx.doi.org/10.1063/1.353288

Sproul AB; Green MA; Stephens AW, 1992, 'Accurate determination of minority carrier- and lattice scattering-mobility in silicon from photoconductance decay', Journal of Applied Physics, 72, pp. 4161 - 4171, http://dx.doi.org/10.1063/1.352225

Sproul AB; Green MA, 1991, 'Improved value for the silicon intrinsic carrier concentration from 275 to 375 K', Journal of Applied Physics, 70, pp. 846 - 854, http://dx.doi.org/10.1063/1.349645

Sproul AB; Green MA; Zhao J, 1990, 'Improved value for the silicon intrinsic carrier concentration at 300 K', Applied Physics Letters, 57, pp. 255 - 257, http://dx.doi.org/10.1063/1.103707

Sproul AB; Green MA; Robinson AM, 1990, 'Computer-aided analysis of high efficiency laser-grooved silicon solar cells', Solar Cells, 28, pp. 233 - 240, http://dx.doi.org/10.1016/0379-6787(90)90057-C

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