By Professor Rajib Rahman

Conference Papers

Verduijn J; Lansbergen GP; Tettamanzi GC; Rahman R; Biesemans S; Colleart N; Klimeck G; L. Hollenberg LC; Rogge S, 2009, 'From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs', in Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, presented at 2009 International Conference on Solid State Devices and Materials, 06 October 2009 - 09 October 2009, http://dx.doi.org/10.7567/ssdm.2009.k-1-1

Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest International Electron Devices Meeting Iedm, http://dx.doi.org/10.1109/IEDM.2008.4796794

Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology Iconn 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272

Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003

Ahmed S; Usman M; Heitzinger C; Rahman R; Schliwa A; Klimeck G, 2007, 'Symmetry breaking and fine structure splitting in zincblende quantum dots: Atomistic simulations of long-range strain and piezoelectric field', in Aip Conference Proceedings, pp. 849 - 850, http://dx.doi.org/10.1063/1.2730157

Working Papers

Cifuentes J; Tanttu T; Gilbert W; Huang J; Vahapoglu E; Leon R; Serrano S; Otter D; Dunmore D; Mai P; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang C-H; Escott C; Lim WH; Hudson F; Rahman R; Dzurak A; Saraiva A, 2023, Bounds to electron spin qubit variability for scalable CMOS architectures, http://dx.doi.org10.21203/rs.3.rs-3057916/v1, https://doi.org/10.21203/rs.3.rs-3057916/v1

Preprints

Sarkar A; Chowdhury P; Hu X; Saraiva A; Dzurak AS; Hamilton AR; Rahman R; Culcer D, 2025, Effect of disorder and strain on the operation of planar Ge hole spin qubits, http://dx.doi.org/10.48550/arxiv.2502.06949

Ma H; Cullen JH; Monir S; Rahman R; Culcer D, 2024, Spin-Hall effect in topological materials: Evaluating the proper spin current in systems with arbitrary degeneracies, http://dx.doi.org/10.1038/s44306-024-00057-w

Donnelly MB; Rowlands J; Kranz L; Hsueh YL; Chung Y; Timofeev AV; Geng H; Singh-Gregory P; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2024, Noise Correlations in a 1D Silicon Spin Qubit Array, http://arxiv.org/abs/2405.03763v1

Krishnan R; Gan BY; Hsueh Y-L; Huq AMS-E; Kenny J; Rahman R; Koh TS; Simmons MY; Weber B, 2024, Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon, http://dx.doi.org/10.48550/arxiv.2404.15762

Aliyar T; Ma H; Krishnan R; Singh G; Chong BQ; Wang Y; Verzhbitskiy I; Wong CPY; Goh KEJ; Shen ZX; Koh TS; Rahman R; Weber B, 2024, Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers, http://dx.doi.org/10.48550/arxiv.2402.01193

Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh Y-L; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2023, Impact of measurement backaction on nuclear spin qubits in silicon, http://dx.doi.org/10.48550/arxiv.2310.12656

Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2023, Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays, http://dx.doi.org/10.1103/PhysRevB.110.125414

Munia MM; Monir S; Osika EN; Simmons MY; Rahman R, 2023, Superexchange coupling of donor qubits in silicon, http://dx.doi.org/10.48550/arxiv.2309.00276

Krishnan R; Biswas S; Hsueh Y-L; Ma H; Rahman R; Weber B, 2023, Spin-valley locking for in-gap quantum dots in a MoS2 transistor, http://dx.doi.org/10.48550/arxiv.2306.13542

Roknuzzaman M; Bharadwaj S; Wang Y; Khandekar C; Jiao D; Rahman R; Jacob Z, 2023, First-Principles Study of Large Gyrotropy in MnBi for Infrared Thermal Photonics, http://dx.doi.org/10.48550/arxiv.2306.09233

Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2023, Bounds to electron spin qubit variability for scalable CMOS architectures, http://dx.doi.org/10.1038/s41467-024-48557-x

Losert MP; Eriksson MA; Joynt R; Rahman R; Scappucci G; Coppersmith SN; Friesen M, 2023, Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells, http://dx.doi.org/10.48550/arxiv.2303.02499

Sun W; Bharadwaj S; Yang L-P; Hsueh Y-L; Wang Y; Jiao D; Rahman R; Jacob Z, 2022, Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations, http://dx.doi.org/10.48550/arxiv.2207.09441

Sarkar A; Hochstetter J; Kha A; Hu X; Simmons MY; Rahman R; Culcer D, 2022, Optimisation of electrically-driven multi-donor quantum dot qubits, http://dx.doi.org/10.48550/arxiv.2203.16553

Wuetz BP; Losert MP; Koelling S; Stehouwer LEA; Zwerver A-MJ; Philips SGJ; Mądzik MT; Xue X; Zheng G; Lodari M; Amitonov SV; Samkharadze N; Sammak A; Vandersypen LMK; Rahman R; Coppersmith SN; Moutanabbir O; Friesen M; Scappucci G, 2021, Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots, http://dx.doi.org/10.48550/arxiv.2112.09606

McJunkin T; Harpt B; Feng Y; Losert MP; Rahman R; Dodson JP; Wolfe MA; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Joynt R; Eriksson MA, 2021, SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits, http://dx.doi.org/10.48550/arxiv.2112.09765

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon, http://dx.doi.org/10.48550/arxiv.2109.08540

Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits, http://dx.doi.org/10.48550/arxiv.2107.00784

Gardin A; Monaghan RD; Whittaker T; Rahman R; Tettamanzi GC, 2021, Non-adiabatic quantum control of valley states in silicon, http://dx.doi.org/10.48550/arxiv.2105.13668

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon, http://dx.doi.org/10.48550/arxiv.2105.10931

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, http://dx.doi.org/10.48550/arxiv.2105.02906

Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, http://dx.doi.org/10.48550/arxiv.2105.02904

Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2020, Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon, http://dx.doi.org/10.1021/acs.nanolett.0c04771

Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2019, Electron g-factor engineering for non-reciprocal spin photonics, http://dx.doi.org/10.48550/arxiv.1908.06393

Mazzola F; Chen C-Y; Rahman R; Zhu X-G; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2019, The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon, http://dx.doi.org/10.48550/arxiv.1904.10929

Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, Aharonov-Bohm interference of fractional quantum Hall edge modes, http://dx.doi.org/10.48550/arxiv.1901.08452

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, Addressable electron spin resonance using donors and donor molecules in silicon, http://dx.doi.org/10.48550/arxiv.1807.10290

Chen C-Y; Ameen TA; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2018, Channel thickness optimization for ultra thin and 2D chemically doped TFETs, http://dx.doi.org/10.48550/arxiv.1804.11034

Chen F; Ilatikhameneh H; Tan Y; Klimeck G; Rahman R, 2017, Switching Mechanism and the Scalability of vertical-TFETs, http://dx.doi.org/10.48550/arxiv.1711.01832

Ilatikhameneh H; Ameen T; Chen C; Klimeck G; Rahman R, 2017, Sensitivity Challenge of Steep Transistors, http://dx.doi.org/10.48550/arxiv.1709.06276

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, http://dx.doi.org/10.48550/arxiv.1706.09261

Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2017, Optimization of edge state velocity in the integer quantum Hall regime, http://dx.doi.org/10.48550/arxiv.1705.07005

Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2017, Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions, http://dx.doi.org/10.48550/arxiv.1704.05488

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, http://dx.doi.org/10.48550/arxiv.1703.04175

Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Klimeck G; Morello A; Dzurak AS; Rahman R, 2017, Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability, http://dx.doi.org/10.1103/PhysRevB.97.241401

Ferdous R; Kawakami E; Scarlino P; Nowak MP; Ward DR; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Eriksson MA; Vandersypen LMK; Rahman R, 2017, Valley dependent anisotropic spin splitting in silicon quantum dots, http://dx.doi.org/10.48550/arxiv.1702.06210

Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions, http://dx.doi.org/10.48550/arxiv.1702.01248

Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen T; Rahman R; Rodwell MJW; Klimeck G, 2017, A Multiscale Modeling of Triple-Heterojunction Tunneling FETs, http://dx.doi.org/10.48550/arxiv.1701.00480

Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2016, Impact of Dimensionality on PN Junctions, http://dx.doi.org/10.48550/arxiv.1611.08784

Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2016, Transport in vertically stacked hetero-structures from 2D materials, http://dx.doi.org/10.48550/arxiv.1608.05057

Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene, http://dx.doi.org/10.48550/arxiv.1607.04065

Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, Characterizing Si:P quantum dot qubits with spin resonance techniques, http://dx.doi.org/10.48550/arxiv.1607.01086

Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass, http://dx.doi.org/10.48550/arxiv.1605.03979

Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, Design Rules for High Performance Tunnel Transistors from 2D Materials, http://dx.doi.org/10.48550/arxiv.1603.09402

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