By Scientia Professor Alexander Hamilton

Preprints

Krix ZE; Tkachenko OA; Tkachenko VA; Wang DQ; Klochan O; Hamilton AR; Sushkov OP, 2024, Quantum magnetic oscillations in the absence of closed electron trajectories, http://dx.doi.org/10.48550/arxiv.2404.04592

Wang DQ; Krix Z; Sushkov OP; Farrer I; Ritchie DA; Hamilton AR; Klochan O, 2024, Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas, http://dx.doi.org/10.48550/arxiv.2403.06426

Wang DQ; Reuter D; Wieck AD; Hamilton AR; Klochan O, 2024, Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential, http://dx.doi.org/10.48550/arxiv.2403.07273

Wang DQ; Krix Z; Tkachenko OA; Tkachenko VA; Chen C; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR; Klochan O, 2024, Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells, http://dx.doi.org/10.48550/arxiv.2402.12769

Liles S; Halverson D; Wang Z; Shamim A; Eggli R; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell M; Huang JY; Escott C; Hudson F; Lim WH; Culcer D; Dzurak A; Hamilton A, 2024, A singlet-triplet hole-spin qubit in MOS silicon, http://dx.doi.org/10.21203/rs.3.rs-3603337/v1

Liles SD; Halverson DJ; Wang Z; Shamim A; Eggli RS; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell M; Huang JH; Escott CC; Hudson FE; Lim WH; Culcer D; Dzurak AS; Hamilton AR, 2023, A singlet-triplet hole-spin qubit in MOS silicon, http://dx.doi.org/10.1038/s41467-024-51902-9

Rendell MJ; Liles SD; Bladwell S; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR, 2023, Probing Fermi surface parity with spin resolved transverse magnetic focussing, http://arxiv.org/abs/2310.04005v2

Wang Z; Sarkar A; Liles SD; Saraiva A; Dzurak AS; Hamilton AR; Culcer D, 2023, Electrical operation of hole spin qubits in planar MOS silicon quantum dots, http://dx.doi.org/10.48550/arxiv.2309.12243

Sarkar A; Wang Z; Rendell M; Hendrickx NW; Veldhorst M; Scappucci G; Khalifa M; Salfi J; Saraiva A; Dzurak AS; Hamilton AR; Culcer D, 2023, Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field, http://dx.doi.org/10.1103/PhysRevB.108.245301

Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2022, Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform, http://dx.doi.org/10.1021/acs.nanolett.2c04417

Hudson K; Srinivasan A; Miserev D; Wang Q; Klochan O; Sushkov O; Farrer I; Ritchie D; Hamilton A, 2022, Observation of oscillating $g$-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts, http://arxiv.org/abs/2211.00253v2

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing, http://dx.doi.org/10.1103/PhysRevB.107.045304

Johnson BC; Stuiber M; Creedon DL; Berhane A; van Beveren LHW; Rubanov S; Cole JH; Mourik V; Hamilton AR; Duty TL; McCallum JC, 2022, Phase transformation-induced superconducting aluminium-silicon alloy rings, http://dx.doi.org/10.48550/arxiv.2207.05343

Chen Y-H; Xing K; Liu S; Holtzman L; Creedon DL; McCallum JC; Watanabe K; Taniguchi T; Barmak K; Hone J; Hamilton AR; Chen S-Y; Fuhrer MS, 2022, P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3, http://dx.doi.org/10.48550/arxiv.2206.11096

Nguyen A; Akhgar G; Cortie DL; Bake A; Pastuovic Z; Zhao W; Liu C; Chen Y-H; Suzuki K; Fuhrer MS; Culcer D; Hamilton AR; Edmonds MT; Karel J, 2022, Increased Phase Coherence Length in a Porous Topological Insulator, http://dx.doi.org/10.48550/arxiv.2205.10589

Conti S; Perali A; Hamilton AR; Milosevic MV; Peeters FM; Neilson D, 2022, Chester supersolid of spatially indirect excitons in double-layer semiconductor heterostructures, http://dx.doi.org/10.48550/arxiv.2205.06598

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing, http://dx.doi.org/10.1103/PhysRevB.105.245305

Tosato A; Ferrari BM; Sammak A; Hamilton AR; Veldhorst M; Virgilio M; Scappucci G, 2022, A high-mobility hole bilayer in a germanium double quantum well, http://dx.doi.org/10.48550/arxiv.2201.06862

Lodari M; Kong O; Rendell M; Tosato A; Sammak A; Veldhorst M; Hamilton AR; Scappucci G, 2021, Lightly-strained germanium quantum wells with hole mobility exceeding one million, http://dx.doi.org/10.48550/arxiv.2112.11860

Keser AC; Wang DQ; Klochan O; Ho DYH; Tkachenko OA; Tkachenko VA; Culcer D; Adam S; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR, 2021, Geometric control of universal hydrodynamic flow in a two dimensional electron fluid, http://dx.doi.org/10.48550/arxiv.2103.09463

Shetty A; Sfigakis F; Mak WY; Gupta KD; Buonacorsi B; Tam MC; Kim HS; Farrer I; Croxall AF; Beere HE; Hamilton AR; Pepper M; Austing DG; Studenikin SA; Sachrajda A; Reimer ME; Wasilewski ZR; Ritchie DA; Baugh J, 2020, Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs, http://dx.doi.org/10.48550/arxiv.2012.14370

Conti S; Pouya SS; Perali A; Virgilio M; Peeters FM; Hamilton AR; Scappucci G; Neilson D, 2020, Electron-hole superfluidity in strained Si/Ge type II heterojunctions, http://dx.doi.org/10.48550/arxiv.2012.05631

Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2020, Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot, http://dx.doi.org/10.1103/PhysRevB.104.235303

Cullen JH; Bhalla P; Marcellina E; Hamilton AR; Culcer D, 2020, Generating a topological anomalous Hall effect in a non-magnetic conductor, http://dx.doi.org/10.1103/PhysRevLett.126.256601

Srinivasan A; Farrer I; Ritchie DA; Hamilton AR, 2020, Improving reproducibility of quantum devices with completely undoped architectures, http://dx.doi.org/10.48550/arxiv.2011.04119

Tan C; Deng M-X; Xiang F; Zheng G; Albarakati S; Algarni M; Partridge J; Hamilton AR; Wang R-Q; Wang L, 2020, Determination of the spin orientation of helical electrons in monolayer WTe2, http://dx.doi.org/10.48550/arxiv.2010.15717

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2019, Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits, http://dx.doi.org/10.48550/arxiv.1911.11143

Van der Donck M; Conti S; Perali A; Hamilton AR; Partoens B; Peeters FM; Neilson D, 2019, Three-dimensional electron-hole superfluidity in a superlattice close to room temperature, http://dx.doi.org/10.48550/arxiv.1911.01123

Saberi-Pouya S; Conti S; Perali A; Croxall AF; Hamilton AR; Peeters FM; Neilson D, 2019, Experimental conditions for observation of electron-hole superfluidity in GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.1910.06631

Marcellina E; Srinivasan A; Nichele F; Stano P; Ritchie DA; Farrer I; Culcer D; Hamilton AR, 2019, Non-linear spin filter for non-magnetic materials at zero magnetic field, http://dx.doi.org/10.48550/arxiv.1907.01312

Marcellina E; Bhalla P; Hamilton AR; Culcer D, 2019, Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes, http://dx.doi.org/10.48550/arxiv.1906.11439

Albarakati S; Tan C; Chen Z-J; Partridge JG; Zheng G; Farrar L; Mayes ELH; Field MR; Lee C; Wang Y; Xiong Y; Tian M; Xiang F; Hamilton AR; Tretiakov OA; Culcer D; Zhao Y-J; Wang L, 2019, Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures, http://dx.doi.org/10.48550/arxiv.1904.10588

Marcellina E; Srinivasan A; Miserev D; Croxall A; Ritchie D; Farrer I; Sushkov O; Culcer D; Hamilton A, 2018, Electrical control of the Zeeman spin splitting in two-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.1806.10817

Zarenia M; Hamilton AR; Peeters FM; Neilson D, 2018, Multiband Mechanism for the Sign Reversal of Coulomb Drag Observed in Double Bilayer Graphene Heterostructures, http://dx.doi.org/10.48550/arxiv.1806.10732

Terrazos LA; Marcellina E; Wang Z; Coppersmith SN; Friesen M; Hamilton AR; Hu X; Koiller B; Saraiva AL; Culcer D; Capaz RB, 2018, Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots, http://dx.doi.org/10.48550/arxiv.1803.10320

Liles SD; Li R; Yang CH; Hudson FE; Veldhorst M; Dzurak AS; Hamilton AR, 2018, Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot, http://dx.doi.org/10.48550/arxiv.1801.04494

Liu H; Marcellina E; Hamilton AR; Culcer D, 2017, Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.1708.07247

Srinivasan A; Miserev DS; Hudson KL; Klochan O; Muraki K; Hirayama Y; Reuter D; Wieck AD; Sushkov OP; Hamilton AR, 2017, Detection and control of spin-orbit interactions in a GaAs hole quantum point contact, http://dx.doi.org/10.48550/arxiv.1703.04233

Suominen HJ; Kjaergaard M; Hamilton AR; Shabani J; Palmstrøm CJ; Marcus CM; Nichele F, 2017, Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform, http://dx.doi.org/10.48550/arxiv.1703.03699

Xiang F-X; Srinivasan A; Klochan O; Dou S-X; Hamilton AR; Wang X-L, 2017, Thickness dependent electronic structure in WTe$_2$ thin films, http://dx.doi.org/10.48550/arxiv.1703.02741

Srinivasan A; Hudson KL; Miserev DS; Yeoh LA; Klochan O; Muraki K; Hirayama Y; Sushkov OP; Hamilton AR, 2017, Electrical control of the sign of the g-factor in a GaAs hole quantum point contact, http://dx.doi.org/10.48550/arxiv.1702.08135

Wang DQ; Klochan O; Hung J-T; Culcer D; Farrer I; Ritchie DA; Hamilton AR, 2016, Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1612.01062

Miserev DS; Srinivasan A; Tkachenko OA; Tkachenko VA; Farrer I; Ritchie DA; Hamilton AR; Sushkov OP, 2016, Mechanisms for strong anisotropy of in-plane g-factors in hole based quantum point contacts, http://dx.doi.org/10.48550/arxiv.1612.00572

Hung J-T; Marcellina E; Wang B; Hamilton AR; Culcer D, 2016, Spin blockade as a probe of Zeeman interactions in hole quantum dots, http://dx.doi.org/10.48550/arxiv.1610.02119

Marcellina E; Hamilton AR; Winkler R; Culcer D, 2016, Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis, http://dx.doi.org/10.48550/arxiv.1604.08759

Li T; Yeoh LA; Srinivasan A; Klochan O; Ritchie DA; Simmons MY; Sushkov OP; Hamilton AR, 2016, Manifestation of a non-abelian gauge field in a p-type semiconductor system, http://dx.doi.org/10.48550/arxiv.1604.06149

Li R; Hudson FE; Dzurak AS; Hamilton AR, 2015, Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1509.00553

Scappucci G; Klesse WM; Yeoh LA; Carter DJ; Warschkow O; Marks NA; Jaeger DL; Capellini G; Simmons MY; Hamilton AR, 2015, Bottom-up assembly of metallic germanium, http://dx.doi.org/10.48550/arxiv.1503.05994

Smith LW; Al-Taie H; Lesage AAJ; Sfigakis F; See P; Griffiths JP; Beere HE; Jones GAC; Ritchie DA; Hamilton AR; Kelly MJ; Smith CG, 2015, Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires, http://dx.doi.org/10.48550/arxiv.1503.01490

Lo S-T; Klochan O; Liu C-H; Wang W-H; Hamilton AR; Liang C-T, 2014, Transport in disordered monolayer molybdenum disulfide nanoflakes: evidence for inhomogeneous charge transport, http://dx.doi.org/10.48550/arxiv.1409.0087

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