By Scientia Professor Alexander Hamilton

Preprints

Wang DQ; Krix Z; Tkachenko OA; Tkachenko VA; Chen C; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR; Klochan O, 2025, Artificial electrostatic crystals: a new platform for creating correlated quantum states, http://dx.doi.org/10.48550/arxiv.2402.12769

Wang Z; Liles SD; Hillier J; Hamilton AR; Culcer D, 2025, Anisotropic spin-blockade leakage current in a Ge hole double quantum dot, http://dx.doi.org/10.48550/arxiv.2504.17852

Sarkar A; Chowdhury P; Hu X; Saraiva A; Dzurak AS; Hamilton AR; Rahman R; Culcer D, 2025, Effect of disorder and strain on the operation of planar Ge hole spin qubits, http://dx.doi.org/10.48550/arxiv.2502.06949

Wendoloski JP; Hillier J; Liles SD; Rendell M; Ashlea-Alava Y; Raes B; Li R; Kubicek S; Godfrin C; Jussot J; Beyne S; Wan D; Rahman MM; Yianni S; Chan KW; Hudson FE; Lim WH; De Greve K; Dzurak AS; Hamilton AR, 2025, Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs, http://dx.doi.org/10.48550/arxiv.2502.21173

Rendell MJ; Liles SD; Bladwell S; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR, 2025, Probing Fermi surface parity with spin resolved transverse magnetic focussing, http://dx.doi.org/10.48550/arxiv.2310.04005

Alava YA; Kumar K; Harsas C; Mehta P; Hathi P; Chen C; Ritchie DA; Hamilton AR, 2024, Simultaneous study of acoustic and optic phonon scattering of electrons and holes in undoped $\mathrm{GaAs}$/$\mathrm{Al_{x} Ga_{1-x} As}$ heterostructures, http://dx.doi.org/10.48550/arxiv.2410.14288

Krix ZE; Tkachenko OA; Tkachenko VA; Wang DQ; Klochan O; Hamilton AR; Sushkov OP, 2024, Quantum magnetic oscillations in the absence of closed electron trajectories, http://dx.doi.org/10.48550/arxiv.2404.04592

Wang DQ; Reuter D; Wieck AD; Hamilton AR; Klochan O, 2024, Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential, http://dx.doi.org/10.48550/arxiv.2403.07273

Wang DQ; Krix Z; Sushkov OP; Farrer I; Ritchie DA; Hamilton AR; Klochan O, 2024, Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas, http://dx.doi.org/10.48550/arxiv.2403.06426

Liles SD; Halverson DJ; Wang Z; Shamim A; Eggli RS; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell M; Huang JH; Escott CC; Hudson FE; Lim WH; Culcer D; Dzurak AS; Hamilton AR, 2023, A singlet-triplet hole-spin qubit in MOS silicon, http://dx.doi.org/10.48550/arxiv.2310.09722

Wang Z; Sarkar A; Liles SD; Saraiva A; Dzurak AS; Hamilton AR; Culcer D, 2023, Electrical operation of hole spin qubits in planar MOS silicon quantum dots, http://dx.doi.org/10.48550/arxiv.2309.12243

Sarkar A; Wang Z; Rendell M; Hendrickx NW; Veldhorst M; Scappucci G; Khalifa M; Salfi J; Saraiva A; Dzurak AS; Hamilton AR; Culcer D, 2023, Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field, http://dx.doi.org/10.48550/arxiv.2307.01451

Hudson K; Srinivasan A; Miserev D; Wang Q; Klochan O; Sushkov O; Farrer I; Ritchie D; Hamilton A, 2022, Observation of oscillating $g$-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts, http://dx.doi.org/10.48550/arxiv.2211.00253

Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2022, Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform, http://dx.doi.org/10.48550/arxiv.2211.00178

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing, http://dx.doi.org/10.48550/arxiv.2210.03383

Johnson BC; Stuiber M; Creedon DL; Berhane A; van Beveren LHW; Rubanov S; Cole JH; Mourik V; Hamilton AR; Duty TL; McCallum JC, 2022, Phase transformation-induced superconducting aluminium-silicon alloy rings, http://dx.doi.org/10.48550/arxiv.2207.05343

Chen Y-H; Xing K; Liu S; Holtzman L; Creedon DL; McCallum JC; Watanabe K; Taniguchi T; Barmak K; Hone J; Hamilton AR; Chen S-Y; Fuhrer MS, 2022, P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3, http://dx.doi.org/10.48550/arxiv.2206.11096

Nguyen A; Akhgar G; Cortie DL; Bake A; Pastuovic Z; Zhao W; Liu C; Chen Y-H; Suzuki K; Fuhrer MS; Culcer D; Hamilton AR; Edmonds MT; Karel J, 2022, Increased Phase Coherence Length in a Porous Topological Insulator, http://dx.doi.org/10.48550/arxiv.2205.10589

Conti S; Perali A; Hamilton AR; Milosevic MV; Peeters FM; Neilson D, 2022, Chester supersolid of spatially indirect excitons in double-layer semiconductor heterostructures, http://dx.doi.org/10.48550/arxiv.2205.06598

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing, http://dx.doi.org/10.48550/arxiv.2204.01223

Nadeem M; Zhang C; Culcer D; Hamilton AR; Fuhrer MS; Wang X, 2022, Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects, http://dx.doi.org/10.48550/arxiv.2107.12278

Lodari M; Kong O; Rendell M; Tosato A; Sammak A; Veldhorst M; Hamilton AR; Scappucci G, 2022, Lightly-strained germanium quantum wells with hole mobility exceeding one million, http://dx.doi.org/10.48550/arxiv.2112.11860

Tosato A; Ferrari BM; Sammak A; Hamilton AR; Veldhorst M; Virgilio M; Scappucci G, 2022, A high-mobility hole bilayer in a germanium double quantum well, http://dx.doi.org/10.48550/arxiv.2201.06862

Shetty A; Sfigakis F; Mak WY; Gupta KD; Buonacorsi B; Tam MC; Kim HS; Farrer I; Croxall AF; Beere HE; Hamilton AR; Pepper M; Austing DG; Studenikin SA; Sachrajda A; Reimer ME; Wasilewski ZR; Ritchie DA; Baugh J, 2021, Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs, http://dx.doi.org/10.48550/arxiv.2012.14370

Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2021, Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot, http://dx.doi.org/10.48550/arxiv.2012.04985

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2021, Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits, http://dx.doi.org/10.48550/arxiv.1911.11143

Keser AC; Wang DQ; Klochan O; Ho DYH; Tkachenko OA; Tkachenko VA; Culcer D; Adam S; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR, 2021, Geometric control of universal hydrodynamic flow in a two dimensional electron fluid, http://dx.doi.org/10.48550/arxiv.2103.09463

Terrazos LA; Marcellina E; Wang Z; Coppersmith SN; Friesen M; Hamilton AR; Hu X; Koiller B; Saraiva AL; Culcer D; Capaz RB, 2021, Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots, http://dx.doi.org/10.48550/arxiv.1803.10320

Nadeem M; Hamilton AR; Fuhrer MS; Wang X, 2020, Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review, http://dx.doi.org/10.48550/arxiv.2101.01074

Conti S; Pouya SS; Perali A; Virgilio M; Peeters FM; Hamilton AR; Scappucci G; Neilson D, 2020, Electron-hole superfluidity in strained Si/Ge type II heterojunctions, http://dx.doi.org/10.48550/arxiv.2012.05631

Cullen JH; Bhalla P; Marcellina E; Hamilton AR; Culcer D, 2020, Generating a topological anomalous Hall effect in a non-magnetic conductor, http://dx.doi.org/10.48550/arxiv.2011.09481

Srinivasan A; Farrer I; Ritchie DA; Hamilton AR, 2020, Improving reproducibility of quantum devices with completely undoped architectures, http://dx.doi.org/10.48550/arxiv.2011.04119

Tan C; Deng M-X; Xiang F; Zheng G; Albarakati S; Algarni M; Partridge J; Hamilton AR; Wang R-Q; Wang L, 2020, Determination of the spin orientation of helical electrons in monolayer WTe2, http://dx.doi.org/10.48550/arxiv.2010.15717

Marcellina E; Srinivasan A; Nichele F; Stano P; Ritchie DA; Farrer I; Culcer D; Hamilton AR, 2020, Non-linear spin filter for non-magnetic materials at zero magnetic field, http://dx.doi.org/10.48550/arxiv.1907.01312

Drachmann ACC; Diaz RE; Thomas C; Suominen HJ; Whiticar AM; Fornieri A; Gronin S; Wang T; Gardner GC; Hamilton AR; Nichele F; Manfra MJ; Marcus CM, 2020, Anodic Oxidation of Epitaxial Superconductor-Semiconductor Hybrids, http://dx.doi.org/10.48550/arxiv.2009.08190

Saberi-Pouya S; Conti S; Perali A; Croxall AF; Hamilton AR; Peeters FM; Neilson D, 2020, Experimental conditions for observation of electron-hole superfluidity in GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.1910.06631

Marcellina E; Bhalla P; Hamilton AR; Culcer D, 2020, Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes, http://dx.doi.org/10.48550/arxiv.1906.11439

Van der Donck M; Conti S; Perali A; Hamilton AR; Partoens B; Peeters FM; Neilson D, 2019, Three-dimensional electron-hole superfluidity in a superlattice close to room temperature, http://dx.doi.org/10.48550/arxiv.1911.01123

Albarakati S; Tan C; Chen Z-J; Partridge JG; Zheng G; Farrar L; Mayes ELH; Field MR; Lee C; Wang Y; Xiong Y; Tian M; Xiang F; Hamilton AR; Tretiakov OA; Culcer D; Zhao Y-J; Wang L, 2019, Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures, http://dx.doi.org/10.48550/arxiv.1904.10588

Marcellina E; Srinivasan A; Miserev D; Croxall A; Ritchie D; Farrer I; Sushkov O; Culcer D; Hamilton A, 2018, Electrical control of the Zeeman spin splitting in two-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.1806.10817

Zarenia M; Hamilton AR; Peeters FM; Neilson D, 2018, Multiband Mechanism for the Sign Reversal of Coulomb Drag Observed in Double Bilayer Graphene Heterostructures, http://dx.doi.org/10.48550/arxiv.1806.10732

Liles SD; Li R; Yang CH; Hudson FE; Veldhorst M; Dzurak AS; Hamilton AR, 2018, Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot, http://dx.doi.org/10.48550/arxiv.1801.04494

Suominen HJ; Kjaergaard M; Hamilton AR; Shabani J; Palmstrøm CJ; Marcus CM; Nichele F, 2017, Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform, http://dx.doi.org/10.48550/arxiv.1703.03699

Miserev DS; Srinivasan A; Tkachenko OA; Tkachenko VA; Farrer I; Ritchie DA; Hamilton AR; Sushkov OP, 2017, Mechanisms for strong anisotropy of in-plane g-factors in hole based quantum point contacts, http://dx.doi.org/10.48550/arxiv.1612.00572

Liu H; Marcellina E; Hamilton AR; Culcer D, 2017, Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.1708.07247

Srinivasan A; Miserev DS; Hudson KL; Klochan O; Muraki K; Hirayama Y; Reuter D; Wieck AD; Sushkov OP; Hamilton AR, 2017, Detection and control of spin-orbit interactions in a GaAs hole quantum point contact, http://dx.doi.org/10.48550/arxiv.1703.04233

Xiang F-X; Srinivasan A; Klochan O; Dou S-X; Hamilton AR; Wang X-L, 2017, Thickness dependent electronic structure in WTe$_2$ thin films, http://dx.doi.org/10.48550/arxiv.1703.02741

Srinivasan A; Hudson KL; Miserev DS; Yeoh LA; Klochan O; Muraki K; Hirayama Y; Sushkov OP; Hamilton AR, 2017, Electrical control of the sign of the g-factor in a GaAs hole quantum point contact, http://dx.doi.org/10.48550/arxiv.1702.08135

Marcellina E; Hamilton AR; Winkler R; Culcer D, 2017, Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis, http://dx.doi.org/10.48550/arxiv.1604.08759

Wang DQ; Klochan O; Hung J-T; Culcer D; Farrer I; Ritchie DA; Hamilton AR, 2016, Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1612.01062

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