Select Publications
Journal articles
2019, 'Silicon integration for quantum sensing', Nature Electronics, 2, pp. 266 - 267, http://dx.doi.org/10.1038/s41928-019-0278-2
,2019, 'Fidelity benchmarks for two-qubit gates in silicon', Nature, 569, pp. 532 - 536, http://dx.doi.org/10.1038/s41586-019-1197-0
,2019, 'Geometric formalism for constructing arbitrary single-qubit dynamically corrected gates', Physical Review A, 99, http://dx.doi.org/10.1103/PhysRevA.99.052321
,2019, 'Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices', Physical Review B, 99, http://dx.doi.org/10.1103/PhysRevB.99.205306
,2019, 'Controlling Spin-Orbit Interactions in Silicon Quantum Dots Using Magnetic Field Direction', Physical Review X, 9, http://dx.doi.org/10.1103/PhysRevX.9.021028
,2019, 'Gate-based single-shot readout of spins in silicon', Nature Nanotechnology, 14, pp. 437 - 441, http://dx.doi.org/10.1038/s41565-019-0400-7
,2019, 'High-fidelity and robust two-qubit gates for quantum-dot spin qubits in silicon', Physical Review A, 99, http://dx.doi.org/10.1103/PhysRevA.99.042310
,2019, 'Silicon qubit fidelities approaching incoherent noise limits via pulse engineering', Nature Electronics, 2, pp. 151 - 158, http://dx.doi.org/10.1038/s41928-019-0234-1
,2019, 'Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector', Physical Review Research, 1, http://dx.doi.org/10.1103/physrevresearch.1.033163
,2018, 'Electron g -factor of valley states in realistic silicon quantum dots', Physical Review B, 98, http://dx.doi.org/10.1103/PhysRevB.98.245424
,2018, 'Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout', Nature Communications, 9, http://dx.doi.org/10.1038/s41467-018-06039-x
,2018, 'Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot', Nature Communications, 9, http://dx.doi.org/10.1038/s41467-018-05700-9
,2018, 'Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy', Physical Review Applied, 10, http://dx.doi.org/10.1103/PhysRevApplied.10.044017
,2018, 'Coherent control via weak measurements in P 31 single-atom electron and nuclear spin qubits', Physical Review B, 98, http://dx.doi.org/10.1103/PhysRevB.98.155201
,2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, 18, pp. 4141 - 4147, http://dx.doi.org/10.1021/acs.nanolett.8b00874
,2018, 'Impact of valley phase and splitting on readout of silicon spin qubits', Physical Review B, 97, http://dx.doi.org/10.1103/PhysRevB.97.245412
,2018, 'Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability', Physical Review B, 97, http://dx.doi.org/10.1103/PhysRevB.97.241401
,2018, 'Logical Qubit in a Linear Array of Semiconductor Quantum Dots', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.021058
,2017, 'Silicon CMOS architecture for a spin-based quantum computer', Nature Communications, 8, http://dx.doi.org/10.1038/s41467-017-01905-6
,2017, 'Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping', Physical Review Applied, 8, http://dx.doi.org/10.1103/PhysRevApplied.8.044021
,2017, 'Electrically driven spin qubit based on valley mixing (vol 95, 075103, 2017)', PHYSICAL REVIEW B, 96, http://dx.doi.org/10.1103/PhysRevB.96.159901
,2017, 'Impact of g -factors and valleys on spin qubits in a silicon double quantum dot', Physical Review B, 96, http://dx.doi.org/10.1103/PhysRevB.96.045302
,2017, 'Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor', Applied Physics Letters, 110, http://dx.doi.org/10.1063/1.4984224
,2017, 'A single-atom quantum memory in silicon', Quantum Science and Technology, 2, pp. 015009, http://dx.doi.org/10.1088/2058-9565/aa63a4
,2017, 'Electrically driven spin qubit based on valley mixing', Physical Review B, 95, http://dx.doi.org/10.1103/PhysRevB.95.075403
,2017, 'A dressed spin qubit in silicon', Nature Nanotechnology, 12, pp. 61 - 66, http://dx.doi.org/10.1038/nnano.2016.178
,2016, 'Valley splitting of single-electron Si MOS quantum dots', Applied Physics Letters, 109, http://dx.doi.org/10.1063/1.4972514
,2016, 'Three-waveform bidirectional pumping of single electrons with a silicon quantum dot', Scientific Reports, 6, pp. 36381, http://dx.doi.org/10.1038/srep36381
,2016, 'Breaking the rotating wave approximation for a strongly driven dressed single-electron spin', Physical Review B, 94, http://dx.doi.org/10.1103/PhysRevB.94.161302
,2016, 'Optimization of a solid-state electron spin qubit using gate set tomography', New Journal of Physics, 18, pp. 103018, http://dx.doi.org/10.1088/1367-2630/18/10/103018
,2016, 'Erratum: Printed circuit board metal powder filters for low electron temperatures (Review of Scientific Instruments (2013) 84 (044706))', Review of Scientific Instruments, 87, http://dx.doi.org/10.1063/1.4959151
,2016, 'Bell's inequality violation with spins in silicon', Nature Nanotechnology, 11, pp. 242 - 246, http://dx.doi.org/10.1038/nnano.2015.262
,2016, 'Interfacing spin qubits in quantum dots and donors - hot, dense and coherent', Mesoscale and Nanoscale Physics
,2015, 'Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot', Nano Letters, 15, pp. 7314 - 7318, http://dx.doi.org/10.1021/acs.nanolett.5b02561
,2015, 'Spin-orbit coupling and operation of multivalley spin qubits', Physical Review B - Condensed Matter and Materials Physics, 92, http://dx.doi.org/10.1103/PhysRevB.92.201401
,2015, 'Electron counting in a silicon single-electron pump', New Journal of Physics, 17, http://dx.doi.org/10.1088/1367-2630/17/10/103030
,2015, 'A two-qubit logic gate in silicon', Nature, 526, pp. 410 - 414, http://dx.doi.org/10.1038/nature15263
,2015, 'Nonexponential fidelity decay in randomized benchmarking with low-frequency noise', Physical Review A - Atomic, Molecular, and Optical Physics, 92, http://dx.doi.org/10.1103/PhysRevA.92.022326
,2015, 'A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4928589
,2015, 'Silicon metal-oxide-semiconductor quantum dots for single-electron pumping', Journal of Visualized Experiments, 2015, http://dx.doi.org/10.3791/52852
,2015, 'Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping', Journal of Visualized Experiments, http://dx.doi.org/10.3791/52852-v
,2015, 'Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154205
,2015, 'Single atom devices by ion implantation', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154204
,2015, 'Electrically controlling single-spin qubits in a continuous microwave field', Science Advances, http://dx.doi.org/10.1126/sciadv.1500022
,2014, 'Coherent control of a single Si 29 nuclear spin qubit', Physical Review Letters, 113, http://dx.doi.org/10.1103/PhysRevLett.113.246801
,2014, 'Charge state hysteresis in semiconductor quantum dots', Applied Physics Letters, 105, http://dx.doi.org/10.1063/1.4901218
,2014, 'Charge offset stability in Si single electron devices with Al gates', Nanotechnology, 25, http://dx.doi.org/10.1088/0957-4484/25/40/405201
,2014, 'Sub-nanoampere one-shot single electron transistor readout electrometry below 10 kelvin', IEEE Transactions on Circuits and Systems I: Regular Papers, 61, pp. 2816 - 2824, http://dx.doi.org/10.1109/TCSI.2014.2321196
,2014, 'An accurate single-electron pump based on a highly tunable silicon quantum dot', Nano Letters, 14, pp. 3405 - 3411, http://dx.doi.org/10.1021/nl500927q
,2014, 'Single-shot readout and relaxation of singlet and triplet states in exchange-coupled P 31 electron spins in silicon', Physical Review Letters, 112, http://dx.doi.org/10.1103/PhysRevLett.112.236801
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