By Associate Professor Rajib Rahman

Conference Papers

Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices', in 2017 Silicon Nanoelectronics Workshop, SNW 2017, pp. 23 - 24, http://dx.doi.org/10.23919/SNW.2017.8242278

Nishat MRK; Tankasala A; Kharche N; Rahman R; Ahmed SS, 2017, 'Multiscale-multiphysics modeling of nonpolar InGaN LEDs', in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, pp. 85 - 88, http://dx.doi.org/10.1109/NANO.2017.8117449

Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2017, 'Transport in vertically stacked hetero-structures from 2D materials', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/864/1/012053

Fay P; Li W; Digiovanni D; Cao L; Ilatikhameneh H; Chen F; Ameen T; Rahman R; Klimeck G; Lund C; Keller S; Islam SM; Chaney A; Cho Y; Jena D, 2017, 'III-N heterostructure devices for low-power logic', in China Semiconductor Technology International Conference 2017, CSTIC 2017, http://dx.doi.org/10.1109/CSTIC.2017.7919743

Fay P; Li W; Cao L; Pourang K; Islam SM; Lund C; Saima S; Ilatikhameneh H; Amin T; Huang J; Rahman R; Jena D; Keller S; Klimeck G, 2016, 'Novel III-N heterostructure devices for low-power logic and more', in 16th International Conference on Nanotechnology - IEEE NANO 2016, pp. 767 - 769, http://dx.doi.org/10.1109/NANO.2016.7751336

Long P; Povolotskyi M; Huang JZ; Ilatikhameneh H; Ameen T; Rahman R; Kubis T; Klimeck G; Rodwell MJW, 2016, 'Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors', in Device Research Conference - Conference Digest, DRC, http://dx.doi.org/10.1109/DRC.2016.7548424

Huang JZ; Long P; Ilatikhameneh H; Ameen T; Rahman R; Povolotskyi M; Rodwell MJW; Klimeck G, 2016, 'Multiscale Transport Simulation of Nanoelectronic Devices with NEMO5', in 2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS), IEEE, PEOPLES R CHINA, Shanghai, pp. 914 - 914, presented at Progress in Electromagnetic Research Symposium (PIERS), PEOPLES R CHINA, Shanghai, 08 August 2016 - 11 August 2016, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000400013900313&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Long P; Huang JZ; Povolotskyi M; Verreck D; Klimeck G; Rodwell MJW, 2016, 'High-current InP-based triple heterojunction tunnel transistors', in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), IEEE, pp. 1 - 2, presented at 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)], 26 June 2016 - 30 June 2016, http://dx.doi.org/10.1109/iciprm.2016.7528592

Ilatikhameneh H; Novakovic B; Tan Y; Salmani-Jelodar M; Kubis T; Povolotskyi M; Rahman R; Klimeck G, 2015, 'Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348606

Mohiyaddin FA; Rahman R; Kalra R; Lee S; Klimeck G; Hollenberg LCL; Yang CH; Rossi A; Dzurak AS; Morello A, 2015, 'Designing a large scale quantum computer with atomistic simulations', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348565

Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Lee S; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2015, 'Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348550

Tan YHM; Ryu H; Weber B; Lee S; Rahman R; Hollenberg LCL; Simmons MY; Klimeck G, 2015, 'Statistical modeling of ultra-scaled donor-based silicon phosphorus devices', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348589

Ilatikhameneh H; Klimeck G; Rahman R, 2015, '2D tunnel transistors for ultra-low power applications: Promises and challenges', in 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings, http://dx.doi.org/10.1109/E3S.2015.7336792

Ilatikhameneh H; Chen FW; Rahman R; Klimeck G, 2015, 'Electrically doped 2D material tunnel transistor', in 18th International Workshop on Computational Electronics, IWCE 2015, http://dx.doi.org/10.1109/IWCE.2015.7301966

Ameen TA; Ilatikhameneh H; Valencia D; Rahman R; Klimeck G, 2015, 'Engineering the optical transitions of self-assembled quantum dots', in 18th International Workshop on Computational Electronics, IWCE 2015, http://dx.doi.org/10.1109/IWCE.2015.7301940

Chen FW; Ilatikhameneh H; Klimeck G; Rahman R; Chu T; Chen Z, 2015, 'Achieving a higher performance in bilayer graphene FET - Strain engineering', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 177 - 181, http://dx.doi.org/10.1109/SISPAD.2015.7292288

Ilatikhameneh H; Rahman R; Appenzeller J; Klimeck G, 2015, 'Electrically doped WTe2 tunnel transistors', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 270 - 272, http://dx.doi.org/10.1109/SISPAD.2015.7292311

Ameen T; Ilatikhameneh H; Charles J; Hsueh Y; Chen S; Fonseca J; Povolotskyi M; Rahman R; Klimeck G, 2014, 'Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots', in Proceedings of the IEEE Conference on Nanotechnology, pp. 921 - 924, http://dx.doi.org/10.1109/NANO.2014.6968137

Neupane MR; Rahman R; Lake RK, 2011, 'Carrier leakage in Ge/Si core-shell nanocrystals for lasers: Core size and strain effects', in Proceedings of SPIE - The International Society for Optical Engineering, http://dx.doi.org/10.1117/12.894153

Tettamanzi G; Lansbergen G; Verduijn J; Rahman R; Paul A; Lee SH; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Innovative characterization techniques for ultra-scaled FinFETs', in Proceedings of the 10th IEEE International Conference on Nanotechnology, IEEE, Korea, pp. 25 - 30, presented at 10th IEEE International Conference on Nanotechnology joint Symposium with Nano Korea 2010, Korea, 17 August 2010 - 20 August 2010, http://dx.doi.org/10.1109/NANO.2010.5698069

Lansbergen GP; Rahman R; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2009, '+Level spectrum of single gated as donors', in AIP Conference Proceedings, pp. 93 - 94, http://dx.doi.org/10.1063/1.3295570

Verduijn J; Lansbergen GP; Tettamanzi GC; Rahman R; Biesemans S; Colleart N; Klimeck G; L. Hollenberg LC; Rogge S, 2009, 'From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs', in Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, presented at 2009 International Conference on Solid State Devices and Materials, 06 October 2009 - 09 October 2009, http://dx.doi.org/10.7567/ssdm.2009.k-1-1

Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest - International Electron Devices Meeting, IEDM, http://dx.doi.org/10.1109/IEDM.2008.4796794

Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272

Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003

Ahmed S; Usman M; Heitzinger C; Rahman R; Schliwa A; Klimeck G, 2007, 'Symmetry breaking and fine structure splitting in zincblende quantum dots: Atomistic simulations of long-range strain and piezoelectric field', in AIP Conference Proceedings, pp. 849 - 850, http://dx.doi.org/10.1063/1.2730157

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