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Preprints

Yoneda J; Huang W; Feng M; Yang CH; Chan KW; Tanttu T; Gilbert W; Leon RCC; Hudson FE; Itoh KM; Morello A; Bartlett SD; Laucht A; Saraiva A; Dzurak AS, 2020, Coherent spin qubit transport in silicon, http://dx.doi.org/10.48550/arxiv.2008.04020

Leon RCC; Yang CH; Hwang JCC; Lemyre JC; Tanttu T; Huang W; Huang JY; Hudson FE; Itoh KM; Laucht A; Pioro-Ladrière M; Saraiva A; Dzurak AS, 2020, Bell-state tomography in a silicon many-electron artificial molecule, http://dx.doi.org/10.48550/arxiv.2008.03968

Mądzik MT; Laucht A; Hudson FE; Jakob AM; Johnson BC; Jamieson DN; Itoh KM; Dzurak AS; Morello A, 2020, Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device, http://dx.doi.org/10.48550/arxiv.2006.04483

Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2020, Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon, http://dx.doi.org/10.48550/arxiv.2004.07666

Yang CH; Chan KW; Harper R; Huang W; Evans T; Hwang JCC; Hensen B; Laucht A; Tanttu T; Hudson FE; Flammia ST; Itoh KM; Morello A; Bartlett SD; Dzurak AS, 2020, Silicon qubit fidelities approaching incoherent noise limits via pulse engineering, http://dx.doi.org/10.48550/arxiv.1807.09500

Jenei M; Zhao R; Tan KY; Tanttu T; Chan KW; Sun Y; Sevriuk V; Hudson F; Rossi A; Dzurak A; Möttönen M, 2019, Superconducting charge sensor coupled to an electron layer in silicon, http://dx.doi.org/10.48550/arxiv.1909.11976

Zhao R; Tanttu T; Tan KY; Hensen B; Chan KW; Hwang JCC; Leon RCC; Yang CH; Gilbert W; Hudson FE; Itoh KM; Kiselev AA; Ladd TD; Morello A; Laucht A; Dzurak AS, 2019, Single-spin qubits in isotopically enriched silicon at low magnetic field, http://dx.doi.org/10.48550/arxiv.1812.08347

Mądzik MT; Ladd TD; Hudson FE; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; McCallum JC; Dzurak AS; Laucht A; Morello A, 2019, Controllable freezing of the nuclear spin bath in a single-atom spin qubit, http://dx.doi.org/10.48550/arxiv.1907.11032

Hensen B; Huang WW; Yang C-H; Chan KW; Yoneda J; Tanttu T; Hudson FE; Laucht A; Itoh KM; Ladd TD; Morello A; Dzurak AS, 2019, A silicon quantum-dot-coupled nuclear spin qubit, http://dx.doi.org/10.48550/arxiv.1904.08260

Yang CH; Leon RCC; Hwang JCC; Saraiva A; Tanttu T; Huang W; Lemyre JC; Chan KW; Tan KY; Hudson FE; Itoh KM; Morello A; Pioro-Ladrière M; Laucht A; Dzurak AS, 2019, Silicon quantum processor unit cell operation above one Kelvin, http://dx.doi.org/10.48550/arxiv.1902.09126

Asaad S; Mourik V; Joecker B; Johnson MAI; Baczewski AD; Firgau HR; Mądzik MT; Schmitt V; Pla JJ; Hudson FE; Itoh KM; McCallum JC; Dzurak AS; Laucht A; Morello A, 2019, Coherent electrical control of a single high-spin nucleus in silicon, http://dx.doi.org/10.48550/arxiv.1906.01086

Leon RCC; Yang CH; Hwang JCC; Lemyre JC; Tanttu T; Huang W; Chan KW; Tan KY; Hudson FE; Itoh KM; Morello A; Laucht A; Pioro-Ladriere M; Saraiva A; Dzurak AS, 2019, Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1902.01550

Tenberg SB; Asaad S; Mądzik MT; Johnson MAI; Joecker B; Laucht A; Hudson FE; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; McCallum JC; Dzurak AS; Joynt R; Morello A, 2019, Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices, http://dx.doi.org/10.48550/arxiv.1812.06644

Tanttu T; Hensen B; Chan KW; Yang H; Huang W; Fogarty M; Hudson F; Itoh K; Culcer D; Laucht A; Morello A; Dzurak A, 2019, Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction, http://dx.doi.org/10.48550/arxiv.1807.10415

West A; Hensen B; Jouan A; Tanttu T; Yang CH; Rossi A; Gonzalez-Zalba MF; Hudson FE; Morello A; Reilly DJ; Dzurak AS, 2018, Gate-based single-shot readout of spins in silicon, http://dx.doi.org/10.48550/arxiv.1809.01864

Huang W; Yang CH; Chan KW; Tanttu T; Hensen B; Leon RCC; Fogarty MA; Hwang JCC; Hudson FE; Itoh KM; Morello A; Laucht A; Dzurak AS, 2018, Fidelity benchmarks for two-qubit gates in silicon, http://dx.doi.org/10.48550/arxiv.1805.05027

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, http://dx.doi.org/10.48550/arxiv.1803.00791

Chan KW; Huang W; Yang CH; Hwang JCC; Hensen B; Tanttu T; Hudson FE; Itoh KM; Laucht A; Morello A; Dzurak AS, 2018, Assessment of a silicon quantum dot spin qubit environment via noise spectroscopy, http://dx.doi.org/10.48550/arxiv.1803.01609

Liles SD; Li R; Yang CH; Hudson FE; Veldhorst M; Dzurak AS; Hamilton AR, 2018, Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot, http://dx.doi.org/10.48550/arxiv.1801.04494

Fogarty MA; Chan KW; Hensen B; Huang W; Tanttu T; Yang CH; Laucht A; Veldhorst M; Hudson FE; Itoh KM; Culcer D; Morello A; Dzurak AS, 2017, Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout, http://dx.doi.org/10.48550/arxiv.1708.03445

Zhao R; Rossi A; Giblin SP; Fletcher JD; Hudson FE; Möttönen M; Kataoka M; Dzurak AS, 2017, Thermal-error regime in high-accuracy gigahertz single-electron pumping, http://dx.doi.org/10.48550/arxiv.1703.04795

Muhonen JT; Dehollain JP; Laucht A; Simmons S; Kalra R; Hudson FE; Jamieson DN; McCallum JC; Itoh KM; Dzurak AS; Morello A, 2017, Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits, http://dx.doi.org/10.48550/arxiv.1702.07991

Hwang JCC; Yang CH; Veldhorst M; Hendrickx N; Fogarty MA; Huang W; Hudson FE; Morello A; Dzurak AS, 2017, Impact of g-factors and valleys on spin qubits in a silicon double quantum dot, http://dx.doi.org/10.48550/arxiv.1608.07748

Freer S; Simmons S; Laucht A; Muhonen JT; Dehollain JP; Kalra R; Mohiyaddin FA; Hudson F; Itoh KM; McCallum JC; Jamieson DN; Dzurak AS; Morello A, 2016, A single-atom quantum memory in silicon, http://dx.doi.org/10.48550/arxiv.1608.07109

Laucht A; Simmons S; Kalra R; Tosi G; Dehollain JP; Muhonen JT; Freer S; Hudson FE; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2016, Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin, http://dx.doi.org/10.48550/arxiv.1606.02380

Laucht A; Kalra R; Simmons S; Dehollain JP; Muhonen JT; Mohiyaddin FA; Freer S; Hudson FE; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2016, A Dressed Spin Qubit in Silicon, http://dx.doi.org/10.48550/arxiv.1603.04800

Li R; Hudson FE; Dzurak AS; Hamilton AR, 2015, Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1509.00553

Veldhorst M; Ruskov R; Yang CH; Hwang JCC; Hudson FE; Flatté ME; Tahan C; Itoh KM; Morello A; Dzurak AS, 2015, Spin-orbit coupling and operation of multi-valley spin qubits, http://dx.doi.org/10.48550/arxiv.1505.01213

Dehollain JP; Simmons S; Muhonen JT; Kalra R; Laucht A; Hudson F; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2015, Bell's inequality violation with spins in silicon, http://dx.doi.org/10.48550/arxiv.1504.03112

Laucht A; Muhonen JT; Mohiyaddin FA; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2015, Electrically controlling single spin qubits in a continuous microwave field, http://dx.doi.org/10.48550/arxiv.1503.05985

Veldhorst M; Yang CH; Hwang JCC; Huang W; Dehollain JP; Muhonen JT; Simmons S; Laucht A; Hudson FE; Itoh KM; Morello A; Dzurak AS, 2014, A Two Qubit Logic Gate in Silicon, http://dx.doi.org/10.48550/arxiv.1411.5760

Muhonen JT; Laucht A; Simmons S; Dehollain JP; Kalra R; Hudson FE; Freer S; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2014, Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking, http://dx.doi.org/10.48550/arxiv.1410.2338

Veldhorst M; Hwang JCC; Yang CH; Leenstra AW; de Ronde B; Dehollain JP; Muhonen JT; Hudson FE; Itoh KM; Morello A; Dzurak AS, 2014, An addressable quantum dot qubit with fault-tolerant control fidelity, http://dx.doi.org/10.48550/arxiv.1407.1950

Muhonen JT; Dehollain JP; Laucht A; Hudson FE; Sekiguchi T; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2014, Storing quantum information for 30 seconds in a nanoelectronic device, http://dx.doi.org/10.48550/arxiv.1402.7140

Laucht A; Kalra R; Muhonen JT; Dehollain JP; Mohiyaddin FA; Hudson F; McCallum JC; Jamieson DN; Dzurak AS; Morello A, 2013, High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon, http://dx.doi.org/10.48550/arxiv.1312.4647

Li R; Hudson FE; Dzurak AS; Hamilton AR, 2013, Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot, http://dx.doi.org/10.48550/arxiv.1304.2871

Hudson FE; Ferguson AJ; Escott CC; Dzurak AS; Clark RG; Jamieson DN; Yang C, 2008, Gate-controlled charge transfer in Si:P double quantum dots, http://dx.doi.org/10.48550/arxiv.cond-mat/0612507

Ferguson AJ; Court NA; Hudson FE; Clark RG, 2006, Microsecond resolution of quasiparticle tunneling in the single-Cooper-pair-transistor, http://dx.doi.org/10.48550/arxiv.cond-mat/0604403

Buehler TM; Chan V; Ferguson AJ; Dzurak AS; Hudson FE; Reilly DJ; Hamilton AR; Clark RG; Jamieson DN; Yang C; Pakes CI; Prawer S, 2006, Controlled single electron transfer between Si:P dots, http://dx.doi.org/10.48550/arxiv.cond-mat/0506594

Hudson FE; Ferguson AJ; Yang C; Jamieson DN; Dzurak AS; Clark RG, 2006, Coulomb blockade in a nanoscale phosphorus-in-silicon island, http://dx.doi.org/10.48550/arxiv.cond-mat/0510488

Liles S; Halverson D; Wang Z; Shamim A; Eggli R; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell M; Huang JY; Escott C; Hudson F; Lim WH; Culcer D; Dzurak A; Hamilton A, A singlet-triplet hole-spin qubit in MOS silicon, http://dx.doi.org/10.21203/rs.3.rs-3603337/v1

Rahman MM; Vahapoglu E; Chan KW; Tanttu T; Dash A; Huang JY; Yianni S; Chenniappan V; Cifuentes JD; Hudson F; Escott CC; Lee YK; Stuyck ND; Laucht A; Morello A; Saraiva A; Cole JH; Dzurak AS; Lim WH, Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices, http://dx.doi.org/10.21203/rs.3.rs-9297493/v1


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