By Dr Fay Hudson

Preprints

Van VKH; Serrano S; Bohémier C; Dash A; Hudson FE; Tanttu T; Yang CH; Feng M; Vahapoglu E; Unseld FK; Lim WH; Morello A; Dzurak AS; Chan KW, 2026, Dispersive Readout of a SiMOS Quantum Dot Using a Flip-Chip Integrated Microwave Resonator, http://dx.doi.org/10.48550/arxiv.2607.14559

Steinacker P; Seedhouse AE; Stuyck ND; Tanttu T; Feng M; Serrano S; Vahapoglu E; Bartee SK; Mai PY; Shaw A; Nickl A; Pauka S; Harlech-Jones B; Dehollain JP; Hudson FE; Chan KW; Ohki TA; Reilly D; Escott CC; Yang CH; Lim WH; Laucht A; Saraiva A; Dzurak AS; Cole JH, 2026, Optimal operating temperature for industry-compatible silicon spin quantum computing: colder is not necessarily better, http://dx.doi.org/10.48550/arxiv.2607.11846

Nickl A; Stuyck ND; Steinacker P; Cifuentes JD; Serrano S; Feng M; Vahapoglu E; Hudson FE; Chan KW; Kubicek S; Jussot J; Canvel Y; Beyne S; Shimura Y; Loo R; Godfrin C; Raes B; Baudot S; Wan D; Laucht A; Yang C-H; Lim WH; Saraiva A; Escott CC; De Greve K; Dzurak AS; Tanttu T, 2026, Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device, http://dx.doi.org/10.48550/arxiv.2512.10174

Jones C; Huang JY; Serrano S; Feng M; Paz-Silva GA; Tanttu T; Steinacker P; Hudson FE; Lim WH; Abrosimov NV; Pohl H-J; Thewalt MLW; Dzurak AS; Saraiva A; Laucht A; Yang CH, 2026, Multi-Qubit Entanglement of Unit Cell Pairs in SiMOS, http://dx.doi.org/10.48550/arxiv.2605.20781

Rahman MM; Vahapoglu E; Chan KW; Tanttu T; Dash A; Huang JY; Yianni S; Chenniappan V; Cifuentes JD; Hudson F; Escott CC; Lee YK; Stuyck ND; Laucht A; Morello A; Saraiva A; Cole JH; Dzurak AS; Lim WH, 2026, Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices, http://dx.doi.org/10.48550/arxiv.2603.02814

Lin S-C; Steinacker P; Feng M; Dash A; Serrano S; Lim WH; Itoh KM; Hudson FE; Tanttu T; Saraiva A; Laucht A; Dzurak AS; Goan H-S; Yang CH, 2026, Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling, http://dx.doi.org/10.48550/arxiv.2507.15554

Jones C; Wysocki P; Feng M; Paz-Silva GA; Ostrove CI; Tanttu T; Rudinger KM; Bartee SK; Young K; Hudson FE; Lim WH; Abrosimov NV; Pohl H-J; Thewalt MLW; Blume-Kohout R; Dzurak AS; Saraiva A; Laucht A; Yang CH, 2026, Mid-circuit logic executed in the qubit layer of a quantum processor, http://dx.doi.org/10.48550/arxiv.2512.12648

Shamim A; Liles SD; Hillier J; Huang JY; Vorreiter I; Chowdhury P; Escott CC; Hudson FE; Lim WH; Chan KW; Rahman R; Dzurak AS; Hamilton AR, 2026, Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation, http://dx.doi.org/10.48550/arxiv.2603.02746

Stemp HG; van Blankenstein MR; Wilhelm B; Asaad S; Mądzik MT; Laucht A; Hudson FE; Dzurak AS; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; Morello A, 2026, Electron readout contrast enhancement in the parallel nuclear regime of an exchange-coupled donor spin qubit system, http://dx.doi.org/10.48550/arxiv.2602.14426

Vaartjes A; Su RY; O'Neill LA; Steinacker P; Goenka G; van Blankenstein MR; Yu X; Wilhelm B; Jakob AM; Hudson FE; Itoh KM; Yang CH; Dzurak AS; Jamieson DN; Nurizzo M; Holmes D; Laucht A; Morello A, 2025, Maximizing the nondemolition nature of a quantum measurement via an adaptive readout protocol, http://dx.doi.org/10.48550/arxiv.2511.10978

Severin B; Botzem T; Fedele F; Yu X; Wilhelm B; Stemp HG; de Fuentes IF; Schwienbacher D; Holmes D; Hudson FE; Dzurak AS; Jakob AM; Jamieson DN; Morello A; Ares N, 2025, Automatic tuning of a donor in a silicon quantum device using machine learning, http://dx.doi.org/10.48550/arxiv.2511.04543

Mai PY; Pereira PH; Alonso LA; Leon RCC; Yang CH; Hwang JCC; Dunmore D; Lemyre JC; Tanttu T; Huang W; Chan KW; Tan KY; Cifuentes JD; Hudson FE; Itoh KM; Laucht A; Pioro-Ladrière M; Escott CC; Dzurak A; Saraiva A; Souza RDME; Feng M, 2025, Enhancement of Electric Drive in Silicon Quantum Dots with Electric Quadrupole Spin Resonance, http://dx.doi.org/10.48550/arxiv.2502.01040

Steinacker P; Goenka G; Su RY; Tanttu T; Lim WH; Serrano S; Botzem T; Cifuentes JD; Lim SQ; McCallum JC; Johnson BC; Hudson FE; Chan KW; Escott CC; Saraiva A; Yang CH; Mourik V; Morello A; Dzurak AS; Laucht A, 2025, Coupling a $^{73}$Ge nuclear spin to an electrostatically defined quantum dot, http://dx.doi.org/10.48550/arxiv.2510.03981

Stemp HG; van Blankenstein MR; Asaad S; Mądzik MT; Joecker B; Firgau HR; Laucht A; Hudson FE; Dzurak AS; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; Morello A, 2025, Scalable entanglement of nuclear spins mediated by electron exchange, http://dx.doi.org/10.48550/arxiv.2503.06872

Stemp HG; Asaad S; van Blankenstein MR; Vaartjes A; Johnson MAI; Mądzik MT; Heskes AJA; Firgau HR; Su RY; Yang CH; Laucht A; Ostrove CI; Rudinger KM; Young K; Blume-Kohout R; Hudson FE; Dzurak AS; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; Morello A, 2025, Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits, http://dx.doi.org/10.48550/arxiv.2309.15463

Lim WH; Tanttu T; Youn T; Huang JY; Serrano S; Dickie A; Yianni S; Hudson FE; Escott CC; Yang CH; Laucht A; Saraiva A; Chan KW; Cifuentes JD; Dzurak AS, 2025, A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling, http://dx.doi.org/10.48550/arxiv.2411.13882

Seedhouse AE; Stuyck ND; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson FE; Itoh KM; Laucht A; Lim WH; Yang CH; Dzurak AS; Saraiva A, 2025, Wavelet correlation noise analysis for qubit operation variable time series, http://dx.doi.org/10.48550/arxiv.2309.12542

Wendoloski JP; Hillier J; Liles SD; Rendell M; Ashlea-Alava Y; Raes B; Li R; Kubicek S; Godfrin C; Jussot J; Beyne S; Wan D; Rahman MM; Yianni S; Chan KW; Hudson FE; Lim WH; De Greve K; Dzurak AS; Hamilton AR, 2025, Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs, http://dx.doi.org/10.48550/arxiv.2502.21173

Yu X; Wilhelm B; Holmes D; Vaartjes A; Schwienbacher D; Nurizzo M; Kringhøj A; van Blankenstein MR; Jakob AM; Gupta P; Hudson FE; Itoh KM; Murray RJ; Blume-Kohout R; Ladd TD; Anand N; Dzurak AS; Sanders BC; Jamieson DN; Morello A, 2025, Schrödinger cat states of a nuclear spin qudit in silicon, http://dx.doi.org/10.48550/arxiv.2405.15494

Steinacker P; Stuyck ND; Lim WH; Tanttu T; Feng M; Nickl A; Serrano S; Candido M; Cifuentes JD; Hudson FE; Chan KW; Kubicek S; Jussot J; Canvel Y; Beyne S; Shimura Y; Loo R; Godfrin C; Raes B; Baudot S; Wan D; Laucht A; Yang CH; Saraiva A; Escott CC; De Greve K; Dzurak AS, 2024, A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations, http://dx.doi.org/10.48550/arxiv.2410.15590

Vaartjes A; Nurizzo M; Zaw LH; Wilhelm B; Yu X; Holmes D; Schwienbacher D; Kringhøj A; van Blankenstein MR; Jakob AM; Hudson FE; Itoh KM; Murray RJ; Blume-Kohout R; Anand N; Dzurak AS; Jamieson DN; Scarani V; Morello A, 2024, Certifying the quantumness of a nuclear spin qudit through its uniform precession, http://dx.doi.org/10.48550/arxiv.2410.07641

Steinacker P; Tanttu T; Lim WH; Stuyck ND; Feng M; Serrano S; Vahapoglu E; Su RY; Huang JY; Jones C; Itoh KM; Hudson FE; Escott CC; Morello A; Saraiva A; Yang CH; Dzurak AS; Laucht A, 2024, Violating Bell's inequality in gate-defined quantum dots, http://dx.doi.org/10.48550/arxiv.2407.15778

Bartee SK; Gilbert W; Zuo K; Das K; Tanttu T; Yang CH; Stuyck ND; Pauka SJ; Su RY; Lim WH; Serrano S; Escott CC; Hudson FE; Itoh KM; Laucht A; Dzurak AS; Reilly DJ, 2024, Spin Qubits with Scalable milli-kelvin CMOS Control, http://dx.doi.org/10.48550/arxiv.2407.15151

Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2024, Bounds to electron spin qubit variability for scalable CMOS architectures, http://dx.doi.org/10.48550/arxiv.2303.14864

Tanttu T; Lim WH; Huang JY; Stuyck ND; Gilbert W; Su RY; Feng M; Cifuentes JD; Seedhouse AE; Seritan SK; Ostrove CI; Rudinger KM; Leon RCC; Huang W; Escott CC; Itoh KM; Abrosimov NV; Pohl H-J; Thewalt MLW; Hudson FE; Blume-Kohout R; Bartlett SD; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2024, Assessment of error variation in high-fidelity two-qubit gates in silicon, http://dx.doi.org/10.48550/arxiv.2303.04090

Hansen I; Seedhouse AE; Serrano S; Nickl A; Feng M; Huang JY; Tanttu T; Stuyck ND; Lim WH; Hudson FE; Itoh KM; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2023, Entangling gates on degenerate spin qubits dressed by a global field, http://dx.doi.org/10.48550/arxiv.2311.09567

Liles SD; Halverson DJ; Wang Z; Shamim A; Eggli RS; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell M; Huang JH; Escott CC; Hudson FE; Lim WH; Culcer D; Dzurak AS; Hamilton AR, 2023, A singlet-triplet hole-spin qubit in MOS silicon, http://dx.doi.org/10.48550/arxiv.2310.09722

Su RY; Huang JY; Stuyck ND; Feng MK; Gilbert W; Evans TJ; Lim WH; Hudson FE; Chan KW; Huang W; Itoh KM; Harper R; Bartlett SD; Yang CH; Laucht A; Saraiva A; Tanttu T; Dzurak AS, 2023, Characterizing non-Markovian Quantum Process by Fast Bayesian Tomography, http://dx.doi.org/10.48550/arxiv.2307.12452

Stuyck ND; Seedhouse AE; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson F; Itoh KM; Laucht A; Lim WH; Yang CH; Saraiva A; Dzurak AS, 2023, Real-time feedback protocols for optimizing fault-tolerant two-qubit gate fidelities in a silicon spin system, http://dx.doi.org/10.48550/arxiv.2309.12541

Dash A; Yianni S; Feng M; Hudson F; Saraiva A; Dzurak AS; Tanttu T, 2023, Silicon charge pump operation limit above and below liquid helium temperature, http://dx.doi.org/10.48550/arxiv.2309.05896

Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2023, Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays, http://dx.doi.org/10.48550/arxiv.2309.01849

Guo KS; Feng M; Huang JY; Gilbert W; Itoh KM; Hudson FE; Chan KW; Lim WH; Dzurak AS; Saraiva A, 2023, Methods for transverse and longitudinal spin-photon coupling in silicon quantum dots with intrinsic spin-orbit effect, http://dx.doi.org/10.48550/arxiv.2308.12626

Huang JY; Su RY; Lim WH; Feng M; van Straaten B; Severin B; Gilbert W; Stuyck ND; Tanttu T; Serrano S; Cifuentes JD; Hansen I; Seedhouse AE; Vahapoglu E; Abrosimov NV; Pohl H-J; Thewalt MLW; Hudson FE; Escott CC; Ares N; Bartlett SD; Morello A; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2023, High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin, http://dx.doi.org/10.48550/arxiv.2308.02111

Holmes D; Wilhelm B; Jakob AM; Yu X; Hudson FE; Itoh KM; Dzurak AS; Jamieson DN; Morello A, 2023, Improved placement precision of implanted donor spin qubits in silicon using molecule ions, http://dx.doi.org/10.48550/arxiv.2308.04117

Serrano S; Feng M; Lim WH; Seedhouse AE; Tanttu T; Gilbert W; Escott CC; Abrosimov NV; Pohl H-J; Thewalt MLW; Hudson FE; Saraiva A; Dzurak AS; Laucht A, 2023, Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations, http://dx.doi.org/10.48550/arxiv.2307.07724

de Fuentes IF; Botzem T; Johnson MAI; Vaartjes A; Asaad S; Mourik V; Hudson FE; Itoh KM; Johnson BC; Jakob AM; McCallum JC; Jamieson DN; Dzurak AS; Morello A, 2023, Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields, http://dx.doi.org/10.48550/arxiv.2306.07453

Feng M; Yoneda J; Huang W; Su Y; Tanttu T; Yang CH; Cifuentes JD; Chan KW; Gilbert W; Leon RCC; Hudson FE; Itoh KM; Laucht A; Dzurak AS; Saraiva A, 2023, Control of dephasing in spin qubits during coherent transport in silicon, http://dx.doi.org/10.48550/arxiv.2207.11865

Savytskyy R; Botzem T; de Fuentes IF; Joecker B; Pla JJ; Hudson FE; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; Dzurak AS; Morello A, 2023, An electrically-driven single-atom `flip-flop' qubit, http://dx.doi.org/10.48550/arxiv.2202.04438

Johnson MAI; Mądzik MT; Hudson FE; Itoh KM; Jakob AM; Jamieson DN; Dzurak A; Morello A, 2022, Beating the thermal limit of qubit initialization with a Bayesian Maxwell's demon, http://dx.doi.org/10.48550/arxiv.2110.02046

Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2022, Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform, http://dx.doi.org/10.48550/arxiv.2211.00178

Wang Z; Feng M; Serrano S; Gilbert W; Leon RCC; Tanttu T; Mai P; Liang D; Huang JY; Su Y; Lim WH; Hudson FE; Escott CC; Morello A; Yang CH; Dzurak AS; Saraiva A; Laucht A, 2022, Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry, http://dx.doi.org/10.48550/arxiv.2208.04724

Gilbert W; Tanttu T; Lim WH; Feng M; Huang JY; Cifuentes JD; Serrano S; Mai PY; Leon RCC; Escott CC; Itoh KM; Abrosimov NV; Pohl H-J; Thewalt MLW; Hudson FE; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2022, On-demand electrical control of spin qubits, http://dx.doi.org/10.48550/arxiv.2201.06679

Mądzik MT; Asaad S; Youssry A; Joecker B; Rudinger KM; Nielsen E; Young KC; Proctor TJ; Baczewski AD; Laucht A; Schmitt V; Hudson FE; Itoh KM; Jakob AM; Johnson BC; Jamieson DN; Dzurak AS; Ferrie C; Blume-Kohout R; Morello A, 2022, Precision tomography of a three-qubit donor quantum processor in silicon, http://dx.doi.org/10.48550/arxiv.2106.03082

Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2021, Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot, http://dx.doi.org/10.48550/arxiv.2012.04985

Vahapoglu E; Slack-Smith JP; Leon RCC; Lim WH; Hudson FE; Day T; Cifuentes JD; Tanttu T; Yang CH; Saraiva A; Abrosimov NV; Pohl H-J; Thewalt MLW; Laucht A; Dzurak AS; Pla JJ, 2021, Coherent control of electron spin qubits in silicon using a global field, http://dx.doi.org/10.48550/arxiv.2107.14622

Hansen I; Seedhouse AE; Chan KW; Hudson F; Itoh KM; Laucht A; Saraiva A; Yang CH; Dzurak AS, 2021, Implementation of the SMART protocol for global qubit control in silicon, http://dx.doi.org/10.48550/arxiv.2108.00836

Evans TJ; Huang W; Yoneda J; Harper R; Tanttu T; Chan KW; Hudson FE; Itoh KM; Saraiva A; Yang CH; Dzurak AS; Bartlett SD, 2021, Fast Bayesian tomography of a two-qubit gate set in silicon, http://dx.doi.org/10.48550/arxiv.2107.14473

Huang JY; Lim WH; Leon RCC; Yang CH; Hudson FE; Escott CC; Saraiva A; Dzurak AS; Laucht A, 2021, A high-sensitivity charge sensor for silicon qubits above one kelvin, http://dx.doi.org/10.48550/arxiv.2103.06433

Seedhouse A; Tanttu T; Leon RCC; Zhao R; Tan KY; Hensen B; Hudson FE; Itoh KM; Yoneda J; Yang CH; Morello A; Laucht A; Coppersmith SN; Saraiva A; Dzurak AS, 2021, Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control, http://dx.doi.org/10.48550/arxiv.2004.07078

Vahapoglu E; Slack-Smith JP; Leon RCC; Lim WH; Hudson FE; Day T; Tanttu T; Yang CH; Laucht A; Dzurak AS; Pla JJ, 2021, Single-electron spin resonance in a nanoelectronic device using a global field, http://dx.doi.org/10.48550/arxiv.2012.10225

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