ORCID as entered in ROS
https://orcid.org/0000-0002-9879-1554
Select Publications
Conference Papers
, 2023, 'Density functional theory to calculate accurate defect energy levels in silicon', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0141286
, 2022, 'Deep Level Transient Spectroscopy Study of Float-zone Silicon Degradation under Light and Elevated Temperature', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0089221
, 2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 269 - 271, http://dx.doi.org/10.1109/PVSC43889.2021.9519027
, 2020, 'Boron-oxygen-related traps in Czochralski grown silicon', Online, presented at
, 2020, 'Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier trapping and recombination active centers', in Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), Virtual, pp. 0689 - 0692, presented at
, 2020, 'Defect luminescence from thermal donors in silicon: Impact of dopant type and thermal donor concentration', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2652 - 2654, http://dx.doi.org/10.1109/PVSC45281.2020.9300685
, 2020, 'The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2522 - 2524, http://dx.doi.org/10.1109/PVSC45281.2020.9300431
, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Canberra, presented at
, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at
, 2019, 'Will LeTID remain a commercial problem? Evaluating the solutions and a possible root cause. (LeTID仍是一个商业难题吗？根源分析和问题解决)', Wuxi, China, presented at
, 2019, 'New insights into the thermally activated defects in n-type float-zone silicon', Leuven, presented at
, 2019, 'Hydrogen-Induced Degradation: An explanation of Light-and Elevated Temperature-Induced Degradation Mechanisms in n-and p-type Silicon', Leuven, Belgium, presented at
, 2018, 'Accurate defect recombination parameters: What are the limitations of current analyses?', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 2520 - 2523, http://dx.doi.org/10.1109/PVSC.2018.8547585
, 2018, 'Impact of Tabula Rasa and Phosphorus Diffusion Gettering on 21% Heterojunction Solar Cells Based on n-Type Czochralski-Grown Upgrade Metallurgical-Grade Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 1687 - 1691, http://dx.doi.org/10.1109/PVSC.2018.8548218
, 2018, 'Slow minority carrier trapping and de-trapping in Czochralski silicon: Influence of thermal donors and the doping density', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3312 - 3314, http://dx.doi.org/10.1109/PVSC.2018.8547946
, 2018, 'An Open Source Based Repository for Defects in Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers (IEEE), pp. 328 - 332, presented at
, 2018, 'An Open Source Based Repository For Defects in Silicon', in 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), IEEE, HI, Waikoloa, pp. 0328 - 0332, presented at
, 2017, 'Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime', WIP-Renewable Energies, Munich, Germany, Amsterdam, presented at
, 2016, 'Carrier induced degradation in compensated n-type silicon solar cells', Singapore, presented at
, 2016, 'Characterization of Cu and Ni Precipitates in n- and p-type Czochralski-grown Silicon by Photoluminescence', in Energy Procedia, pp. 880 - 885, http://dx.doi.org/10.1016/j.egypro.2016.07.097
, 2016, 'Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell', in Energy Procedia, pp. 434 - 442, http://dx.doi.org/10.1016/j.egypro.2016.07.124
, 2016, 'Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers', in Solid State Phenomena, pp. 120 - 125, http://dx.doi.org/10.4028/www.scientific.net/SSP.242.120
, 2015, 'Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?', in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, http://dx.doi.org/10.1109/PVSC.2015.7355687
, 2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at
, 2015, 'Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon', in Energy Procedia, pp. 619 - 625, http://dx.doi.org/10.1016/j.egypro.2015.07.089
, 2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', in Energy Procedia, pp. 646 - 650, http://dx.doi.org/10.1016/j.egypro.2015.07.092
, 2014, 'Towards high efficiency UMG silicon solar cells', Kyoto, presented at
, 2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, pp. 129 - 134, http://dx.doi.org/10.1109/PVSC.2014.6925391
, 2014, 'Limiting defects in high-lifetime n-type silicon wafers', Breckenridge, presented at
, 2014, 'Recombination active defects limiting the lifetime of float-zone silicon', Breckenridge, presented at
, 2014, 'Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence', Denver, presented at
, 2014, 'Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level: Extension to p-type Silicon', in 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), IEEE, CO, Denver, pp. 125 - 130, presented at
, 2014, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', Lille, presented at
, 2014, 'Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers', in Energy Procedia, pp. 81 - 84, http://dx.doi.org/10.1016/j.egypro.2014.12.346
, 2013, 'Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes', Paris, presented at
, 2013, 'Boron-oxygen defect imaging in p-type Czochralskisilicon', Breckenridge, presented at
, 2012, 'Acceptor-related metastable defects in compensated n-type silicon', Hangzhou, presented at
, 2012, 'Impact of minority-impurity scattering on the carrier mobility in compensated silicon', Hangzhou, presented at
, 2012, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', in 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, IEEE, pp. 1 - 6, presented at
, 2012, 'Compensation engineering for silicon solar cells', in Energy Procedia, pp. 67 - 77, http://dx.doi.org/10.1016/j.egypro.2012.02.008
, 2011, 'Transport properties of p-type compensated silicon at room temperature', in Progress in Photovoltaics: Research and Applications, pp. 787 - 793, http://dx.doi.org/10.1002/pip.1036
, 2011, 'A contactless method for determining the carrier mobility sum in silicon wafers for solar cells', Seattle, presented at
, 2011, 'Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon', Seattle, presented at
, 2011, 'Contactless determination of the injection dependent carrier mobility sum in silicon', in 2011 37th IEEE Photovoltaic Specialists Conference, IEEE, pp. 002928 - 002928, presented at
, 2011, 'Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon', in 2011 37th IEEE Photovoltaic Specialists Conference, IEEE, pp. 003424 - 003424, presented at
, 2010, 'Generation and annihilation of boron-oxygen-related recombination centers in compensated p - And n -type silicon', in Journal of Applied Physics, http://dx.doi.org/10.1063/1.3511741
, 2010, 'Boron-Oxygen-Related Recombination Centers in Compensated Silicon', WIP-Renewable Energies, Munich, Germany, Valencia, presented at
, 2010, 'Electron and hole mobility reduction and Hall Factor in compensated p-type silicon', WIP-Renewable Energies, Munich, Germany, Valenci, presented at
, 2010, 'revised equation for the formation rate of iron-boron pairs in silicon', WIP-Renewable Energies, Munich, Germany, Valencia, presented at
, 2009, 'Boron-oxygen defects in compensated p-type Czochralski silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at
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https://orcid.org/0000-0002-9879-1554