ORCID as entered in ROS

Select Publications
Wang Z; McNab S; Cai Y; Cheng Y; Rougieux F; Song N, 2024, 'Balancing Pinhole Density and Doping Depth in for High Quality P+ TOPCon Layers', in Proceedings of the Asia Pacific Solar Research Conference 2024, Australian PV Institute, Sydney, Australia, presented at Asia Pacific Solar Research Conference 2024’, Sydney, Australia, 03 December 2024 - 05 December 2024, http://dx.doi.org/10.26190/unsworks/30838
Zou Y; Zhou Z; Sun C; Jin Q; Wang Y; Rougieux F; Song N, 2024, 'The Impact of Oxygen Concentration on LID in Gallium Doped Wafers', in Rougieux F (ed.), Proceedings of the Asia Pacific Solar Research Conference 2024, Australian PV Institute, Sydney, presented at Asia Pacific Solar Research Conference 2024, Sydney, 03 December 2024 - 05 December 2024, http://dx.doi.org/10.26190/unsworks/30837
Xia D; Sharma ASS; Pusch A; Tayebjee MJY; Nielsen MP; Rougieux FE; Dorman KR; Mishima TD; Santos MB; Sellers IR; Ekins-Daukes NJ; Krich JJ, 2024, 'Global Analysis of Valley Photovoltaic Devices Demonstrates Challenges of Current Designs', in 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC), IEEE, pp. 0494 - 0494, presented at 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC), 09 June 2024 - 14 June 2024, http://dx.doi.org/10.1109/pvsc57443.2024.10749061
Sabah SH; Le TT; Zhou Z; Sun C; Wang Y; Jin Q; Rougieux FE; Macdonald D; Liu A, 2024, 'Recombination Activity of Chromium-Gallium Pairs in Silicon', in 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC), IEEE, pp. 504 - 504, presented at 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC), 09 June 2024 - 14 June 2024, http://dx.doi.org/10.1109/pvsc57443.2024.10748828
Thite SD; Danish N; Florez GO; Rougieux F, 2024, 'A Three-Step Approach to Shift from Assessment Integrity to Assurance of Learning in the Age of AI', in 2024 World Engineering Education Forum - Global Engineering Deans Council, WEEF-GEDC 2024, http://dx.doi.org/10.1109/WEEF-GEDC63419.2024.10854944
Deng S; Gentle A; Roemer U; Cai Y; Cheng Y; Rougieux F; Green M; Song N, 2023, 'Influence of light element incorporation on poly-Si/SiOX passivated contact', in Proceedings of the Asia Pacific Solar Research Conference 2023, Australian PV Institute, Melbourne,Australian, presented at Asia Pacific Solar Research Conference 2023, Melbourne,Australian, 03 December 2023 - 05 December 2023, http://dx.doi.org/10.26190/unsworks/30834
Rougieux FE; Hossain MA; Hoex B, 2023, 'Density functional theory to calculate accurate defect energy levels in silicon', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0141286
Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Deep Level Transient Spectroscopy Study of Float-zone Silicon Degradation under Light and Elevated Temperature', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0089221
Song N; Ng C; Roemer U; Deng S; Cai Y; Rougieux F, 2021, 'Tuning the crystalline and optical properties of sputtered polysilicon carbide contacts', Sydney, Australia, presented at 31st International Photovoltaic Science and Engineering Conference, Sydney, Sydney, Australia, 13 December 2021 - 15 December 2021
Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 269 - 271, http://dx.doi.org/10.1109/PVSC43889.2021.9519027
Jafari S; Zhu Y; Rougieux F; De Guzman JA; Markevich V; Peaker A; Hameiri Z, 2020, 'Boron-oxygen-related traps in Czochralski grown silicon', Online, presented at Asia Pacific Solar Research Conference, Online, 30 November 2020
Jafari S; Zhu Y; Rougieux F; De Guzman JAT; Markevich VP; Peaker AR; Hameiri Z, 2020, 'Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier trapping and recombination active centers', in Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), Virtual, pp. 0689 - 0692, presented at 47th IEEE Photovoltaics Specialists Conference, Virtual, 15 June 2020 - 21 August 2020, http://dx.doi.org/10.1109/PVSC45281.2020.9300371
Siriwardhana M; Rougieux FE; MacDonald D, 2020, 'Defect luminescence from thermal donors in silicon: Impact of dopant type and thermal donor concentration', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2652 - 2654, http://dx.doi.org/10.1109/PVSC45281.2020.9300685
Rougieux F; Sun C; Juhl M, 2020, 'The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2522 - 2524, http://dx.doi.org/10.1109/PVSC45281.2020.9300431
Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Canberra, presented at Asia-Pacific Solar Research Conference, Canberra, 03 December 2019
Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019 - 13 September 2019
Chen D; Hamer P; Kim M; Mullins J; Sen C; Khan M; Oshima T; Abe H; Liu S; Ciesla A; Chan C; Chen R; Rougieux F; Zhou Z; Wright B; Varshney U; Vicari Stefani B; Soeriyadi A; Vargas Castrillon C; Samadi A; Hameiri Z; zhang X; Jin H; Qi W; Abbott M; Chong C; Peaker A; Hallam B, 2019, 'Will LeTID remain a commercial problem? Evaluating the solutions and a possible root cause. (LeTID仍是一个商业难题吗?根源分析和问题解决)', Wuxi, China, presented at 18th Issue PV WE CLASS-Crystalline Silicon Advanced Technology and Materials Forum, Wuxi, China, 24 April 2019 - 24 May 2019, http://dx.doi.org/10.26190/unsworks/27317
Zhu Y; Rougieux F; Grant N; Mullins J; Ann De Guzman J; Murphy J; Markevich V; Coletti G; Peaker A; Hameiri Z, 2019, 'New insights into the thermally activated defects in n-type float-zone silicon', Leuven, presented at 9th International Conference on Silicon Photovoltaics, Leuven, 08 April 2019 - 10 April 2019
Chen D; Hamer P; Ciesla A; Chan C; Chen R; Rougieux F; Liu S; Kim M; Samadi A; Wright B; Vargas C; Zhang X; Hameiri Z; Hao J; Wenham S; Abbott M; Hallam B, 2019, 'Hydrogen-Induced Degradation: An explanation of Light-and Elevated Temperature-Induced Degradation Mechanisms in n-and p-type Silicon', Leuven, Belgium, presented at 9thInternational Conference on Crystalline Silicon Photovoltaics 2019, Leuven, Belgium, 08 April 2019, http://dx.doi.org/10.26190/unsworks/27902
Rougieux FE; Sun C; Zhu Y; MacDonald DH, 2018, 'Accurate defect recombination parameters: What are the limitations of current analyses?', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 2520 - 2523, http://dx.doi.org/10.1109/PVSC.2018.8547585
Basnet R; Weigand W; Yu ZJ; Sun C; Phang SP; Rougieux FE; Einhaus R; Degoulange J; Holman Z; Macdonald D, 2018, 'Impact of Tabula Rasa and Phosphorus Diffusion Gettering on 21% Heterojunction Solar Cells Based on n-Type Czochralski-Grown Upgrade Metallurgical-Grade Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 1687 - 1691, http://dx.doi.org/10.1109/PVSC.2018.8548218
Siriwardhana M; Macdonald D; Heinz FD; Rougieux FE, 2018, 'Slow minority carrier trapping and de-trapping in Czochralski silicon: Influence of thermal donors and the doping density', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3312 - 3314, http://dx.doi.org/10.1109/PVSC.2018.8547946
Juhl MK; Heinz FD; Coletti G; MacDonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository for Defects in Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers (IEEE), pp. 328 - 332, presented at 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 10 June 2018 - 15 June 2018, http://dx.doi.org/10.1109/PVSC.2018.8547621
Juhl MK; Heinz FD; Coletti G; Macdonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository For Defects in Silicon', in 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), IEEE, HI, Waikoloa, pp. 0328 - 0332, presented at 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC, HI, Waikoloa, 10 June 2018 - 15 June 2018, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000469200400077&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
Rougieux F; Nguyen H; Maconald D; Mitchell B; Falster R, 2017, 'Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime', WIP-Renewable Energies, Munich, Germany, Amsterdam, presented at 35th European Photovoltaic Solar Energy Conference, Amsterdam, 24 September 2017 - 28 September 2017
Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2016, 'Carrier induced degradation in compensated n-type silicon solar cells', Singapore, presented at 26th Photovoltaic Science and Engineering Conference, Singapore, 24 October 2016 - 28 October 2016
Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2016, 'Characterization of Cu and Ni Precipitates in n- and p-type Czochralski-grown Silicon by Photoluminescence', in Energy Procedia, pp. 880 - 885, http://dx.doi.org/10.1016/j.egypro.2016.07.097
Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; MacDonald D, 2016, 'Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell', in Energy Procedia, pp. 434 - 442, http://dx.doi.org/10.1016/j.egypro.2016.07.124
Grant NE; Rougieux FE; Macdonald D, 2016, 'Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers', in Solid State Phenomena, pp. 120 - 125, http://dx.doi.org/10.4028/www.scientific.net/SSP.242.120
Rougieux FE; Grant NE; Macdonald D; Murphy JD, 2015, 'Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?', in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, http://dx.doi.org/10.1109/PVSC.2015.7355687
Macdonald D; Liu A; Nguyen HT; Lim SY; Rougieux F, 2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 31st European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 14 September 2015 - 18 September 2015
Nguyen HT; Rougieux FE; Wang F; Macdonald D, 2015, 'Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon', in Energy Procedia, pp. 619 - 625, http://dx.doi.org/10.1016/j.egypro.2015.07.089
Sun C; Liu A; Rougieux FE; MacDonald D, 2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', in Energy Procedia, pp. 646 - 650, http://dx.doi.org/10.1016/j.egypro.2015.07.092
Rougieux F; Samundsett C; Zheng P; Fong K; Macdonald D, 2014, 'Towards high efficiency UMG silicon solar cells', Kyoto, presented at 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, 23 October 2014 - 27 October 2014
Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, pp. 129 - 134, http://dx.doi.org/10.1109/PVSC.2014.6925391
Macdonald D; Zheng P; Rougieux F, 2014, 'Limiting defects in high-lifetime n-type silicon wafers', Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014
Grant NE; Rougieux FE; Macdonald D; Bullock J; Wan Y, 2014, 'Recombination active defects limiting the lifetime of float-zone silicon', Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014
Nguyen HT; Rougieux FE; Baker-Finch S; Macdonald D, 2014, 'Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence', Denver, presented at 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, Denver, 08 June 2014 - 13 June 2014
Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level: Extension to p-type Silicon', in 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), IEEE, CO, Denver, pp. 125 - 130, presented at 40th IEEE Photovoltaic Specialists Conference (PVSC), CO, Denver, 08 June 2014 - 13 June 2014, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000366638900029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
Grant N; Markevich VP; Mullins J; Peaker A; Rougieux FIACRE; Macdonald D; Murphy JD, 2014, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', Lille, presented at European Materials Research Society Spring Meeting, Lille, 26 May 2014 - 28 May 2014
Rougieux FE; Grant NE; Macdonald D, 2014, 'Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers', in Energy Procedia, pp. 81 - 84, http://dx.doi.org/10.1016/j.egypro.2014.12.346
Grant NE; McIntosh KR; Tan J; Rougieux FE; Wan Y; Barugkin C, 2013, 'Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes', Paris, presented at 28th European Photovoltaic Solar Energy Conference, Paris, France, Paris, 30 September 2013 - 04 October 2013
Lim S; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralskisilicon', Breckenridge, presented at 23rdWorkshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, Breckenridge, 28 July 2013 - 31 July 2013
Rougieux F; Phang SP; Shalav A; Lim B; Macdonald D, 2012, 'Acceptor-related metastable defects in compensated n-type silicon', Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012
Rougieux F; Forster M; Macdonald D; Cuevas A, 2012, 'Impact of minority-impurity scattering on the carrier mobility in compensated silicon', Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012
Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2012, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', in 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, IEEE, pp. 1 - 6, presented at 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 03 June 2012 - 08 June 2012, http://dx.doi.org/10.1109/pvsc-vol2.2013.6656739
Cuevas A; Forster M; Rougieux F; Macdonald D, 2012, 'Compensation engineering for silicon solar cells', in Energy Procedia, pp. 67 - 77, http://dx.doi.org/10.1016/j.egypro.2012.02.008
Rougieux FE; MacDonald D; Cuevas A, 2011, 'Transport properties of p-type compensated silicon at room temperature', in Progress in Photovoltaics: Research and Applications, pp. 787 - 793, http://dx.doi.org/10.1002/pip.1036
Rougieux F; Thiboust M; Zheng P; Tan J; Grant N; Macdonald D; Cuevas A, 2011, 'A contactless method for determining the carrier mobility sum in silicon wafers for solar cells', Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011
Rougieux F, 2011, 'Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon', Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011