Select Publications

Conference Papers

Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Canberra, presented at Asia-Pacific Solar Research Conference, Canberra, 03 December 2019

Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019 - 13 September 2019

Zhu Y; Rougieux F; Grant N; Mullins J; Ann De Guzman J; Murphy J; Markevich V; Coletti G; Peaker A; Hameiri Z, 2019, 'New insights into the thermally activated defects in n-type float-zone silicon', Leuven, presented at 9th International Conference on Silicon Photovoltaics, Leuven, 08 April 2019 - 10 April 2019

Rougieux FE; Sun C; Zhu Y; MacDonald DH, 2018, 'Accurate defect recombination parameters: What are the limitations of current analyses?', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 2520 - 2523, http://dx.doi.org/10.1109/PVSC.2018.8547585

Juhl MK; Heinz FD; Coletti G; MacDonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository for Defects in Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 328 - 332, http://dx.doi.org/10.1109/PVSC.2018.8547621

Basnet R; Weigand W; Yu ZJ; Sun C; Phang SP; Rougieux FE; Einhaus R; Degoulange J; Holman Z; Macdonald D, 2018, 'Impact of Tabula Rasa and Phosphorus Diffusion Gettering on 21% Heterojunction Solar Cells Based on n-Type Czochralski-Grown Upgrade Metallurgical-Grade Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 1687 - 1691, http://dx.doi.org/10.1109/PVSC.2018.8548218

Siriwardhana M; Macdonald D; Heinz FD; Rougieux FE, 2018, 'Slow minority carrier trapping and de-trapping in Czochralski silicon: Influence of thermal donors and the doping density', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3312 - 3314, http://dx.doi.org/10.1109/PVSC.2018.8547946

Juhl MK; Heinz FD; Coletti G; Macdonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository For Defects in Silicon', in 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), IEEE, Waikoloa, HI, pp. 0328 - 0332, presented at 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC, Waikoloa, HI, 10 June 2018 - 15 June 2018, http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000469200400077&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Rougieux F; Nguyen H; Maconald D; Mitchell B; Falster R, 2017, 'Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime', in Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime, WIP-Renewable Energies, Munich, Germany, Amsterdam, presented at 35th European Photovoltaic Solar Energy Conference, Amsterdam, 24 September 2017 - 28 September 2017

Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; MacDonald D, 2016, 'Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell', in Energy Procedia, pp. 434 - 442, http://dx.doi.org/10.1016/j.egypro.2016.07.124

Grant NE; Rougieux FE; Macdonald D, 2016, 'Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers', in Solid State Phenomena, pp. 120 - 125, http://dx.doi.org/10.4028/www.scientific.net/SSP.242.120

Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2016, 'Carrier induced degradation in compensated n-type silicon solar cells', in Carrier induced degradation in compensated n-type silicon solar cells, 26th Photovoltaic Science and Engineering Conference, Singapore, presented at 26th Photovoltaic Science and Engineering Conference, Singapore, 24 October 2016 - 28 October 2016

Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2016, 'Characterization of Cu and Ni Precipitates in n- and p-type Czochralski-grown Silicon by Photoluminescence', in Energy Procedia, pp. 880 - 885, http://dx.doi.org/10.1016/j.egypro.2016.07.097

Rougieux FE; Grant NE; Macdonald D; Murphy JD, 2015, 'Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?', in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, http://dx.doi.org/10.1109/PVSC.2015.7355687

Nguyen HT; Rougieux FE; Wang F; Macdonald D, 2015, 'Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon', in Energy Procedia, pp. 619 - 625, http://dx.doi.org/10.1016/j.egypro.2015.07.089

Macdonald D; Liu A; Nguyen HT; Lim SY; Rougieux F, 2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', in Physical Modelling of Luminescence Spectra from Crystalline Silicon, WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 31st European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 14 September 2015 - 18 September 2015

Sun C; Liu A; Rougieux FE; MacDonald D, 2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', in Energy Procedia, pp. 646 - 650, http://dx.doi.org/10.1016/j.egypro.2015.07.092

Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level: Extension to p-type Silicon', in 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), IEEE, Denver, CO, pp. 125 - 130, presented at 40th IEEE Photovoltaic Specialists Conference (PVSC), Denver, CO, 08 June 2014 - 13 June 2014, http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000366638900029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Rougieux FE; Grant NE; Macdonald D, 2014, 'Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers', in Energy Procedia, pp. 81 - 84, http://dx.doi.org/10.1016/j.egypro.2014.12.346

Macdonald D; Zheng P; Rougieux F, 2014, 'Limiting defects in high-lifetime n-type silicon wafers', in Limiting defects in high-lifetime n-type silicon wafers, 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014

Grant NE; Rougieux FE; Macdonald D; Bullock J; Wan Y, 2014, 'Recombination active defects limiting the lifetime of float-zone silicon', in Recombination active defects limiting the lifetime of float-zone silicon, 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014

Grant N; Markevich VP; Mullins J; Peaker A; Rougieux FIACRE; Macdonald D; Murphy JD, 2014, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', in Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon, European Materials Research Society Spring Meeting, Lille, presented at European Materials Research Society Spring Meeting, Lille, 26 May 2014 - 28 May 2014

Rougieux F; Samundsett C; Zheng P; Fong K; Macdonald D, 2014, 'Towards high efficiency UMG silicon solar cells', in Towards high efficiency UMG silicon solar cells, 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, presented at 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, 23 October 2014 - 27 October 2014

Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, pp. 129 - 134, http://dx.doi.org/10.1109/PVSC.2014.6925391

Nguyen HT; Rougieux FE; Baker-Finch S; Macdonald D, 2014, 'Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence', in Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence, 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, Denver, presented at 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, Denver, 08 June 2014 - 13 June 2014

Lim S; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralskisilicon', in Boron-oxygen defect imaging in p-type Czochralskisilicon, 23rdWorkshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, Breckenridge, presented at 23rdWorkshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, Breckenridge, 28 July 2013 - 31 July 2013

Grant NE; McIntosh KR; Tan J; Rougieux FE; Wan Y; Barugkin C, 2013, 'Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes', in Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes, 28th European Photovoltaic Solar Energy Conference, Paris, France, Paris, presented at 28th European Photovoltaic Solar Energy Conference, Paris, France, Paris, 30 September 2013 - 04 October 2013

Cuevas A; Forster M; Rougieux F; Macdonald D, 2012, 'Compensation engineering for silicon solar cells', in Energy Procedia, pp. 67 - 77, http://dx.doi.org/10.1016/j.egypro.2012.02.008

Rougieux F; Phang SP; Shalav A; Lim B; Macdonald D, 2012, 'Acceptor-related metastable defects in compensated n-type silicon', in Acceptor-related metastable defects in compensated n-type silicon, 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012

Rougieux F; Forster M; Macdonald D; Cuevas A, 2012, 'Impact of minority-impurity scattering on the carrier mobility in compensated silicon', in Impact of minority-impurity scattering on the carrier mobility in compensated silicon, 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012

Rougieux FE; MacDonald D; Cuevas A, 2011, 'Transport properties of p-type compensated silicon at room temperature', in Progress in Photovoltaics: Research and Applications, pp. 787 - 793, http://dx.doi.org/10.1002/pip.1036

Rougieux F; Thiboust M; Zheng P; Tan J; Grant N; Macdonald D; Cuevas A, 2011, 'A contactless method for determining the carrier mobility sum in silicon wafers for solar cells', in A contactless method for determining the carrier mobility sum in silicon wafers for solar cells, 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011

Rougieux F, 2011, 'Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon', in Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon, 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011

Lim B; Rougieux F; MacDonald D; Bothe K; Schmidt J, 2010, 'Generation and annihilation of boron-oxygen-related recombination centers in compensated p - And n -type silicon', in Journal of Applied Physics, http://dx.doi.org/10.1063/1.3511741

Lim B; Liu A; Rougieux F; Macdonald D; Bothe K; Schmidt J, 2010, 'Boron-Oxygen-Related Recombination Centers in Compensated Silicon', in Boron-Oxygen-Related Recombination Centers in Compensated Silicon, WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010

Rougieux F; Macdonald D; Cuevas A; Ruffel S; Schmidt J; Lim B, 2010, 'Electron and hole mobility reduction and Hall Factor in compensated p-type silicon', in Electron and hole mobility reduction and Hall Factor in compensated p-type silicon, WIP-Renewable Energies, Munich, Germany, Valenci, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valenci, 06 September 2010 - 10 September 2010

Tan J; Macdonald D; Rougieux F; Cuevas A, 2010, 'revised equation for the formation rate of iron-boron pairs in silicon', in revised equation for the formation rate of iron-boron pairs in silicon, WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010

Macdonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Boron-oxygen defects in compensated p-type Czochralski silicon', in Boron-oxygen defects in compensated p-type Czochralski silicon, WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009

Rougieux F; Macdonald D; McIntosh K; Cuevas A, 2009, 'Oxidation-induced inversion layer in compensated p-type silicon', in Oxidation-induced inversion layer in compensated p-type silicon, WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009


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