By Dr Fiacre Rougieux

Journal articles

Rougieux FE; Sen C; Abbott M; Hoex B, 2024, 'Light-activated surface passivation for more efficient silicon heterojunction solar cells: Origin, physics and stability', Solar Energy Materials and Solar Cells, 269, http://dx.doi.org/10.1016/j.solmat.2024.112789

Le TT; Zhou Z; Chen A; Yang Z; Rougieux F; Macdonald D; Liu A, 2024, 'Reassessing iron–gallium recombination activity in silicon', Journal of Applied Physics, 135, http://dx.doi.org/10.1063/5.0198737

Sun Z; Yi C; Cai Y; Soeriyadi A; Rougieux F; Bremner S, 2024, 'Low-temperature aluminum doped and induced polysilicon and its application as partial rear contacts on p-type silicon solar cells', Solar Energy Materials and Solar Cells, 267, http://dx.doi.org/10.1016/j.solmat.2024.112708

Deng S; Cai Y; Roemer U; Ma FJ; Rougieux F; Huang J; Cheng Y; Green MA; Song N, 2024, 'Mitigating parasitic absorption in Poly-Si contacts for TOPCon solar cells: A comprehensive review', Solar Energy Materials and Solar Cells, 267, http://dx.doi.org/10.1016/j.solmat.2024.112704

Poddar S; Evans J; Prasad A; Kay M; Rougieux F; Bremner S, 2024, 'Accelerated degradation of photovoltaic modules under a future warmer climate', Progress in Photovoltaics: research and applications, http://dx.doi.org/10.1002/pip.3788

Sharma AS; Hanif M; Bremner SP; Nielsen MP; Tayebjee MJY; Rougieux FE; Ekins-Daukes NJ; Pusch A, 2023, 'Heat Flow through Nonideal Contacts in Hot-Carrier Solar Cells', Physical Review Applied, 20, http://dx.doi.org/10.1103/PhysRevApplied.20.034001

Juhl MK; Heinz FD; Coletti G; Rougieux FE; Sun C; Contreras MV; Niewelt T; Krich J; Schubert MC, 2023, 'On the Conversion between Recombination Rates and Electronic Defect Parameters in Semiconductors', IEEE Journal of Photovoltaics, 13, pp. 524 - 534, http://dx.doi.org/10.1109/JPHOTOV.2023.3267173

Yi C; Zhou Z; Juhl MK; Tong J; Fong KC; Rougieux FE; Bremner S, 2023, 'Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing', AIP Advances, 13, http://dx.doi.org/10.1063/5.0117424

Zhou Z; Rougieux F; Siriwardhana M; Coletti G, 2022, 'Characterisation of striations in n-type silicon wafer processed with polysilicon contacts', Solar Energy Materials and Solar Cells, 248, http://dx.doi.org/10.1016/j.solmat.2022.111965

Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon', IEEE Journal of Photovoltaics, 12, pp. 1369 - 1376, http://dx.doi.org/10.1109/JPHOTOV.2022.3195098

Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2022, 'Electronic Properties of the Boron-Oxygen Defect Precursor of the Light-Induced Degradation in Silicon', IEEE Journal of Photovoltaics, 12, pp. 1135 - 1141, http://dx.doi.org/10.1109/JPHOTOV.2022.3190769

Sharma AS; Pusch A; Nielsen MP; Römer U; Tayebjee MJY; Rougieux FE; Ekins-Daukes NJ, 2022, 'Constraints imposed by the sparse solar photon flux on upconversion and hot carrier solar cells', Solar Energy, 237, pp. 44 - 51, http://dx.doi.org/10.1016/j.solener.2022.03.037

Siriwardhana M; Rougieux F; Basnet R; Nguyen HT; Macdonald D, 2022, 'Photoluminescence Spectroscopy of Thermal Donors and Oxygen Precipitates Formed in Czochralski Silicon at 450 °c', IEEE Journal of Photovoltaics, 12, pp. 222 - 229, http://dx.doi.org/10.1109/JPHOTOV.2021.3126120

Tan X; Chen R; Rougieux FE, 2021, 'The Mechanism of Surface Passivation Degradation in SiO2/SiNxStack under Light and Elevated Temperature', IEEE Journal of Photovoltaics, 11, pp. 1380 - 1387, http://dx.doi.org/10.1109/JPHOTOV.2021.3106881

Basnet R; Sio H; Siriwardhana M; Rougieux FE; Macdonald D, 2021, 'Ring-Like Defect Formation in N-Type Czochralski-Grown Silicon Wafers during Thermal Donor Formation', Physica Status Solidi (A) Applications and Materials Science, 218, http://dx.doi.org/10.1002/pssa.202000587

Jafari S; Zhu Y; Rougieux F; De Guzman JAT; Markevich VP; Peaker AR; Hameiri Z, 2021, 'On the correlation between light-induced degradation and minority carrier traps in boron-doped Czochralski silicon', ACS Applied Materials & Interfaces, 13, pp. 6140 - 6146, http://dx.doi.org/10.1021/acsami.0c17549

Siriwardhana M; Zhu Y; Hameiri Z; Macdonald D; Rougieux F, 2021, 'Photoconductance determination of carrier capture cross sections of slow traps in silicon through variable pulse filling', IEEE Journal of Photovoltaics, 11, pp. 273 - 281, http://dx.doi.org/10.1109/JPHOTOV.2020.3043835

Sun C; Zhu Y; Juhl M; Yang W; Rougieux F; Hameiri Z; Macdonald D, 2021, 'The role of charge and recombination-enhanced defect reaction effects in the dissociation of FeB pairs in p-type silicon under carrier injection', Physica Status Solidi - Rapid Research Letters, 15, pp. 2000520 - 2000520, http://dx.doi.org/10.1002/pssr.202000520

Zhu Y; Rougieux F; Grant NE; De Guzman JAT; Murphy JD; Markevich VP; Coletti G; Peaker AR; Hameiri Z, 2021, 'Electrical characterization of thermally activated defects in n-type float-zone silicon', IEEE Journal of Photovoltaics, 11, pp. 26 - 35, http://dx.doi.org/10.1109/jphotov.2020.3031382

Raj V; Rougieux F; Fu L; Tan HH; Jagadish C, 2020, 'Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts', IEEE Journal of Photovoltaics, 10, pp. 1657 - 1666, http://dx.doi.org/10.1109/JPHOTOV.2019.2961615

Rougieux FE; Sun C; Juhl M, 2020, 'Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results', Solar Energy Materials and Solar Cells, 210, http://dx.doi.org/10.1016/j.solmat.2020.110481

Basnet R; Phang SP; Sun C; Rougieux FE; MacDonald D, 2020, 'Onset of ring defects in n-type Czochralski-grown silicon wafers', Journal of Applied Physics, 127, http://dx.doi.org/10.1063/5.0005899

Chen D; Hamer P; Kim M; Chan C; Ciesla nee Wenham A; Rougieux F; Zhang Y; Abbott M; Hallam B, 2020, 'Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon', Solar Energy Materials and Solar Cells, 207, http://dx.doi.org/10.1016/j.solmat.2019.110353

Basnet R; Weigand W; Yu ZJ; Sun C; Phang SP; Sio HC; Rougieux FE; Holman ZC; Macdonald D, 2020, 'Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells', Solar Energy Materials and Solar Cells, 205, http://dx.doi.org/10.1016/j.solmat.2019.110287

Rougieux FE; Kwapil W; Heinz F; Siriwardhana M; Schubert MC, 2019, 'Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption', Scientific Reports, 9, http://dx.doi.org/10.1038/s41598-019-49804-8

Sun C; Chen D; Rougieux F; basnet R; Hallam B; macdonald D, 2019, 'Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon', Solar Energy Materials and Solar Cells, http://dx.doi.org/10.1016/j.solmat.2019.03.016

Basnet R; Sun C; Wu H; Nguyen HT; Rougieux FE; Macdonald D, 2018, 'Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman', Journal of Applied Physics, 124, http://dx.doi.org/10.1063/1.5057724

Rougieux FE; Sun C; Macdonald D, 2018, 'Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review', Solar Energy Materials and Solar Cells, 187, pp. 263 - 272, http://dx.doi.org/10.1016/j.solmat.2018.07.029

Raj V; Dos Santos TS; Rougieux F; Vora K; Lysevych M; Fu L; Mokkapati S; Tan HH; Jagadish C, 2018, 'Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer', Journal of Physics D: Applied Physics, 51, http://dx.doi.org/10.1088/1361-6463/aad7e3

Basnet R; Rougieux FE; Sun C; Phang SP; Samundsett C; Einhaus R; Degoulange J; Macdonald D, 2018, 'Methods to improve bulk lifetime in n-type czochralski-grown upgraded metallurgical-grade silicon wafers', IEEE Journal of Photovoltaics, 8, pp. 990 - 996, http://dx.doi.org/10.1109/JPHOTOV.2018.2834944

Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2017, 'Carrier induced degradation in compensated n-type silicon solar cells: Impact of light-intensity, forward bias voltage, and temperature on the reaction kinetics', Japanese Journal of Applied Physics, 56, http://dx.doi.org/10.7567/JJAP.56.08MB23

Sun C; Nguyen HT; Sio HC; Rougieux FE; Macdonald D, 2017, 'Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence', IEEE Journal of Photovoltaics, 7, pp. 988 - 995, http://dx.doi.org/10.1109/JPHOTOV.2017.2705420

Rougieux FE; Nguyen HT; Macdonald DH; Mitchell B; Falster R, 2017, 'Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon', IEEE Journal of Photovoltaics, 7, pp. 735 - 740, http://dx.doi.org/10.1109/JPHOTOV.2017.2678840

Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2017, 'Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging', Journal of Crystal Growth, 460, pp. 98 - 104, http://dx.doi.org/10.1016/j.jcrysgro.2016.12.084

Zheng P; Rougieux FE; Zhang X; Degoulange J; Einhaus R; Rivat P; MacDonald DH, 2017, '21.1% UMG Silicon Solar Cells', IEEE Journal of Photovoltaics, 7, pp. 58 - 61, http://dx.doi.org/10.1109/JPHOTOV.2016.2616192

Grant NE; Markevich VP; Mullins J; Peaker AR; Rougieux F; Macdonald D; Murphy JD, 2016, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', Physica Status Solidi (A) Applications and Materials Science, 213, pp. 2844 - 2849, http://dx.doi.org/10.1002/pssa.201600360

Sun C; Rougieux FE; Degoulange J; Einhaus R; Macdonald D, 2016, 'Reassessment of the recombination properties of aluminium–oxygen complexes in n- and p-type Czochralski-grown silicon', Physica Status Solidi (B) Basic Research, 253, pp. 2079 - 2084, http://dx.doi.org/10.1002/pssb.201600363

Grant NE; Markevich VP; Mullins J; Peaker AR; Rougieux F; Macdonald D, 2016, 'Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon', Physica Status Solidi - Rapid Research Letters, 10, pp. 443 - 447, http://dx.doi.org/10.1002/pssr.201600080

Rougieux F; Samundsett C; Fong KC; Fell A; Zheng P; MacDonald D; Degoulange J; Einhaus R; Forster M, 2016, 'High efficiency UMG silicon solar cells: Impact of compensation on cell parameters', Progress in Photovoltaics: Research and Applications, 24, pp. 725 - 734, http://dx.doi.org/10.1002/pip.2729

Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; Macdonald D, 2016, 'Upgraded metallurgical-grade silicon solar cells with efficiency above 20%', Applied Physics Letters, 108, http://dx.doi.org/10.1063/1.4944788

Nguyen HT; Rougieux FE; Yan D; Wan Y; Mokkapati S; De Nicolas SM; Seif JP; De Wolf S; MacDonald D, 2016, 'Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy', Solar Energy Materials and Solar Cells, 145, pp. 403 - 411, http://dx.doi.org/10.1016/j.solmat.2015.11.006

Sun C; Liu AY; Phang SP; Rougieux FE; MacDonald D, 2015, 'Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon', Journal of Applied Physics, 118, http://dx.doi.org/10.1063/1.4929757

Nguyen HT; Rougieux FE; Wang F; Tan H; Macdonald D, 2015, 'Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon', IEEE Journal of Photovoltaics, 5, pp. 799 - 804, http://dx.doi.org/10.1109/JPHOTOV.2015.2407158

Rougieux FE; Grant NE; Barugkin C; MacDonald D; Murphy JD, 2015, 'Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon', IEEE Journal of Photovoltaics, 5, pp. 495 - 498, http://dx.doi.org/10.1109/JPHOTOV.2014.2367912

Grant NE; Rougieux FE; MacDonald D; Bullock J; Wan Y, 2015, 'Grown-in defects limiting the bulk lifetime of p -type float-zone silicon wafers', Journal of Applied Physics, 117, http://dx.doi.org/10.1063/1.4907804

Sun C; Rougieux FE; Macdonald D, 2015, 'A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon', Journal of Applied Physics, 117, http://dx.doi.org/10.1063/1.4906465

Zheng P; Rougieux FE; Grant NE; Macdonald D, 2015, 'Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon', IEEE Journal of Photovoltaics, 5, pp. 183 - 188, http://dx.doi.org/10.1109/JPHOTOV.2014.2366687

Nguyen HT; Rougieux FE; Baker-Finch SC; MacDonald D, 2015, 'Impact of carrier profile and rear-side reflection on photoluminescence spectra in planar crystalline silicon wafers at different temperatures', IEEE Journal of Photovoltaics, 5, pp. 77 - 81, http://dx.doi.org/10.1109/JPHOTOV.2014.2359737

Sun C; Rougieux FE; Macdonald D, 2014, 'Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon', Journal of Applied Physics, 115, http://dx.doi.org/10.1063/1.4881497

Rougieux FE; MacDonald D, 2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4870002

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