Select Publications

Journal articles

Rougieux FE; Sun C; Juhl M, 2020, 'Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results', Solar Energy Materials and Solar Cells, vol. 210, http://dx.doi.org/10.1016/j.solmat.2020.110481

Basnet R; Phang SP; Sun C; Rougieux FE; MacDonald D, 2020, 'Onset of ring defects in n-type Czochralski-grown silicon wafers', Journal of Applied Physics, vol. 127, http://dx.doi.org/10.1063/5.0005899

Chen D; Hamer P; Kim M; Chan C; Ciesla nee Wenham A; Rougieux F; Zhang Y; Abbott M; Hallam B, 2020, 'Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon', Solar Energy Materials and Solar Cells, vol. 207, http://dx.doi.org/10.1016/j.solmat.2019.110353

Basnet R; Weigand W; Yu ZJ; Sun C; Phang SP; Sio HC; Rougieux FE; Holman ZC; Macdonald D, 2020, 'Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells', Solar Energy Materials and Solar Cells, vol. 205, http://dx.doi.org/10.1016/j.solmat.2019.110287

Raj V; Rougieux F; Fu L; Tan HH; Jagadish C, 2020, 'Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts', IEEE Journal of Photovoltaics, pp. 1 - 10, http://dx.doi.org/10.1109/jphotov.2019.2961615

Rougieux FE; Kwapil W; Heinz F; Siriwardhana M; Schubert MC, 2019, 'Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption', Scientific Reports, vol. 9, http://dx.doi.org/10.1038/s41598-019-49804-8

Sun C; Chen D; Rougieux F; basnet R; Hallam B; macdonald D, 2019, 'Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon', Solar Energy Materials and Solar Cells, http://dx.doi.org/10.1016/j.solmat.2019.03.016

Basnet R; Sun C; Wu H; Nguyen HT; Rougieux FE; Macdonald D, 2018, 'Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman', Journal of Applied Physics, vol. 124, http://dx.doi.org/10.1063/1.5057724

Rougieux FE; Sun C; Macdonald D, 2018, 'Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review', Solar Energy Materials and Solar Cells, vol. 187, pp. 263 - 272, http://dx.doi.org/10.1016/j.solmat.2018.07.029

Raj V; Dos Santos TS; Rougieux F; Vora K; Lysevych M; Fu L; Mokkapati S; Tan HH; Jagadish C, 2018, 'Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer', Journal of Physics D: Applied Physics, vol. 51, http://dx.doi.org/10.1088/1361-6463/aad7e3

Basnet R; Rougieux FE; Sun C; Phang SP; Samundsett C; Einhaus R; Degoulange J; Macdonald D, 2018, 'Methods to improve bulk lifetime in n-type czochralski-grown upgraded metallurgical-grade silicon wafers', IEEE Journal of Photovoltaics, vol. 8, pp. 990 - 996, http://dx.doi.org/10.1109/JPHOTOV.2018.2834944

Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2017, 'Carrier induced degradation in compensated n-type silicon solar cells: Impact of light-intensity, forward bias voltage, and temperature on the reaction kinetics', Japanese Journal of Applied Physics, vol. 56, http://dx.doi.org/10.7567/JJAP.56.08MB23

Rougieux FE; Nguyen HT; Macdonald DH; Mitchell B; Falster R, 2017, 'Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon', IEEE Journal of Photovoltaics, vol. 7, pp. 735 - 740, http://dx.doi.org/10.1109/JPHOTOV.2017.2678840

Zheng P; Rougieux FE; Zhang X; Degoulange J; Einhaus R; Rivat P; MacDonald DH, 2017, '21.1% UMG Silicon Solar Cells', IEEE Journal of Photovoltaics, vol. 7, pp. 58 - 61, http://dx.doi.org/10.1109/JPHOTOV.2016.2616192

Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2017, 'Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging', Journal of Crystal Growth, vol. 460, pp. 98 - 104, http://dx.doi.org/10.1016/j.jcrysgro.2016.12.084

Sun C; Nguyen HT; Sio HC; Rougieux FE; Macdonald D, 2017, 'Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence', IEEE Journal of Photovoltaics, vol. 7, pp. 988 - 995, http://dx.doi.org/10.1109/JPHOTOV.2017.2705420

Grant NE; Markevich VP; Mullins J; Peaker AR; Rougieux F; Macdonald D; Murphy JD, 2016, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', Physica Status Solidi (A) Applications and Materials Science, vol. 213, pp. 2844 - 2849, http://dx.doi.org/10.1002/pssa.201600360

Grant NE; Markevich VP; Mullins J; Peaker AR; Rougieux F; Macdonald D, 2016, 'Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon', Physica Status Solidi - Rapid Research Letters, vol. 10, pp. 443 - 447, http://dx.doi.org/10.1002/pssr.201600080

Rougieux F; Samundsett C; Fong KC; Fell A; Zheng P; MacDonald D; Degoulange J; Einhaus R; Forster M, 2016, 'High efficiency UMG silicon solar cells: Impact of compensation on cell parameters', Progress in Photovoltaics: Research and Applications, vol. 24, pp. 725 - 734, http://dx.doi.org/10.1002/pip.2729

Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; Macdonald D, 2016, 'Upgraded metallurgical-grade silicon solar cells with efficiency above 20%', Applied Physics Letters, vol. 108, http://dx.doi.org/10.1063/1.4944788

Nguyen HT; Rougieux FE; Yan D; Wan Y; Mokkapati S; De Nicolas SM; Seif JP; De Wolf S; MacDonald D, 2016, 'Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy', Solar Energy Materials and Solar Cells, vol. 145, pp. 403 - 411, http://dx.doi.org/10.1016/j.solmat.2015.11.006

Sun C; Rougieux FE; Degoulange J; Einhaus R; Macdonald D, 2016, 'Reassessment of the recombination properties of aluminium–oxygen complexes in n- and p-type Czochralski-grown silicon', Physica Status Solidi (B) Basic Research, vol. 253, pp. 2079 - 2084, http://dx.doi.org/10.1002/pssb.201600363

Sun C; Liu AY; Phang SP; Rougieux FE; MacDonald D, 2015, 'Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon', Journal of Applied Physics, vol. 118, http://dx.doi.org/10.1063/1.4929757

Nguyen HT; Rougieux FE; Wang F; Tan H; Macdonald D, 2015, 'Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon', IEEE Journal of Photovoltaics, vol. 5, pp. 799 - 804, http://dx.doi.org/10.1109/JPHOTOV.2015.2407158

Rougieux FE; Grant NE; Barugkin C; MacDonald D; Murphy JD, 2015, 'Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon', IEEE Journal of Photovoltaics, vol. 5, pp. 495 - 498, http://dx.doi.org/10.1109/JPHOTOV.2014.2367912

Sun C; Rougieux FE; Macdonald D, 2015, 'A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon', Journal of Applied Physics, vol. 117, http://dx.doi.org/10.1063/1.4906465

Grant NE; Rougieux FE; MacDonald D; Bullock J; Wan Y, 2015, 'Grown-in defects limiting the bulk lifetime of p -type float-zone silicon wafers', Journal of Applied Physics, vol. 117, http://dx.doi.org/10.1063/1.4907804

Nguyen HT; Rougieux FE; Baker-Finch SC; MacDonald D, 2015, 'Impact of carrier profile and rear-side reflection on photoluminescence spectra in planar crystalline silicon wafers at different temperatures', IEEE Journal of Photovoltaics, vol. 5, pp. 77 - 81, http://dx.doi.org/10.1109/JPHOTOV.2014.2359737

Zheng P; Rougieux FE; Grant NE; Macdonald D, 2015, 'Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon', IEEE Journal of Photovoltaics, vol. 5, pp. 183 - 188, http://dx.doi.org/10.1109/JPHOTOV.2014.2366687

Sun C; Rougieux FE; Macdonald D, 2014, 'Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon', Journal of Applied Physics, vol. 115, http://dx.doi.org/10.1063/1.4881497

Rougieux FE; MacDonald D, 2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.4870002

Zheng P; Rougieux FE; MacDonald D; Cuevas A, 2014, 'Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level', IEEE Journal of Photovoltaics, vol. 4, pp. 560 - 565, http://dx.doi.org/10.1109/JPHOTOV.2013.2294755

Hameiri Z; Rougieux F; Sinton R; Trupke T, 2014, 'Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements', Applied Physics Letters, vol. 104, pp. 073506, http://dx.doi.org/10.1063/1.4865804

Forster M; Wagner P; Degoulange J; Einhaus R; Galbiati G; Rougieux FE; Cuevas A; Fourmond E, 2014, 'Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells', Solar Energy Materials and Solar Cells, vol. 120, pp. 390 - 395, http://dx.doi.org/10.1016/j.solmat.2013.06.014

Nguyen HT; Rougieux FE; Mitchell B; Macdonald D, 2014, 'Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence', Journal of Applied Physics, vol. 115, http://dx.doi.org/10.1063/1.4862912

Rougieux FE; Grant NE; Macdonald D, 2013, 'Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers', Physica Status Solidi - Rapid Research Letters, vol. 7, pp. 616 - 618, http://dx.doi.org/10.1002/pssr.201308053

Lim SY; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralski silicon', Applied Physics Letters, vol. 103, http://dx.doi.org/10.1063/1.4819096

Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2013, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', IEEE Journal of Photovoltaics, vol. 3, pp. 108 - 113, http://dx.doi.org/10.1109/JPHOTOV.2012.2210032

MacDonald D; Phang SP; Rougieux FE; Lim SY; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2012, 'Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering', Semiconductor Science and Technology, vol. 27, http://dx.doi.org/10.1088/0268-1242/27/12/125016

Forster M; Cuevas A; Fourmond E; Rougieux FE; Lemiti M, 2012, 'Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon', Journal of Applied Physics, vol. 111, http://dx.doi.org/10.1063/1.3686151

Forster M; Fourmond E; Rougieux FE; Cuevas A; Gotoh R; Fujiwara K; Uda S; Lemiti M, 2012, 'Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron', Applied Physics Letters, vol. 100, http://dx.doi.org/10.1063/1.3680205

Rougieux FE; Zheng P; Thiboust M; Tan J; Grant NE; MacDonald DH; Cuevas A, 2012, 'A contactless method for determining the carrier mobility sum in silicon wafers', IEEE Journal of Photovoltaics, vol. 2, pp. 41 - 46, http://dx.doi.org/10.1109/JPHOTOV.2011.2175705

Rougieux FE; Forster M; MacDonald D; Cuevas A; Lim B; Schmidt J, 2011, 'Recombination activity and impact of the boron-oxygen-related defect in compensated N-type silicon', IEEE Journal of Photovoltaics, vol. 1, pp. 54 - 58, http://dx.doi.org/10.1109/JPHOTOV.2011.2165698

Rougieux FE; Lim B; Schmidt J; Forster M; MacDonald D; Cuevas A, 2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, vol. 110, http://dx.doi.org/10.1063/1.3633492

Tan J; MacDonald D; Rougieux F; Cuevas A, 2011, 'Accurate measurement of the formation rate of iron-boron pairs in silicon', Semiconductor Science and Technology, vol. 26, http://dx.doi.org/10.1088/0268-1242/26/5/055019

MacDonald D; Rougieux F; Mansoulie Y; Tan J; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2010, 'Scanning X-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon', Physica Status Solidi (A) Applications and Materials Science, vol. 207, pp. 1807 - 1810, http://dx.doi.org/10.1002/pssa.201026137

Rougieux FE; MacDonald D; Cuevas A; Ruffell S; Schmidt J; Lim B; Knights AP, 2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p -type silicon', Journal of Applied Physics, vol. 108, http://dx.doi.org/10.1063/1.3456076

Rougieux FE; MacDonald D; McIntosh KR; Cuevas A, 2010, 'Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon', Semiconductor Science and Technology, vol. 25, http://dx.doi.org/10.1088/0268-1242/25/5/055009

MacDonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Light-induced boron-oxygen defect generation in compensated p -type Czochralski silicon', Journal of Applied Physics, vol. 105, http://dx.doi.org/10.1063/1.3121208


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