By Dr Fiacre Rougieux

Journal articles

Rougieux FE; MacDonald D, 2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4870002

Zheng P; Rougieux FE; MacDonald D; Cuevas A, 2014, 'Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level', IEEE Journal of Photovoltaics, 4, pp. 560 - 565, http://dx.doi.org/10.1109/JPHOTOV.2013.2294755

Hameiri Z; Rougieux F; Sinton R; Trupke T, 2014, 'Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements', Applied Physics Letters, 104, pp. 073506, http://dx.doi.org/10.1063/1.4865804

Nguyen HT; Rougieux FE; Mitchell B; Macdonald D, 2014, 'Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence', Journal of Applied Physics, 115, pp. 043710, http://dx.doi.org/10.1063/1.4862912

Forster M; Wagner P; Degoulange J; Einhaus R; Galbiati G; Rougieux FE; Cuevas A; Fourmond E, 2014, 'Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells', Solar Energy Materials and Solar Cells, 120, pp. 390 - 395, http://dx.doi.org/10.1016/j.solmat.2013.06.014

Rougieux FE; Grant NE; Macdonald D, 2013, 'Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers', Physica Status Solidi - Rapid Research Letters, 7, pp. 616 - 618, http://dx.doi.org/10.1002/pssr.201308053

Lim SY; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralski silicon', Applied Physics Letters, 103, http://dx.doi.org/10.1063/1.4819096

Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2013, 'Incomplete Ionization and Carrier Mobility in Compensated $p$-Type and $n$-Type Silicon', 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, pp. 1 - 6

Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2013, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', IEEE Journal of Photovoltaics, 3, pp. 108 - 113, http://dx.doi.org/10.1109/JPHOTOV.2012.2210032

MacDonald D; Phang SP; Rougieux FE; Lim SY; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2012, 'Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering', Semiconductor Science and Technology, 27, http://dx.doi.org/10.1088/0268-1242/27/12/125016

Forster M; Cuevas A; Fourmond E; Rougieux FE; Lemiti M, 2012, 'Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon', Journal of Applied Physics, 111, http://dx.doi.org/10.1063/1.3686151

Forster M; Fourmond E; Rougieux FE; Cuevas A; Gotoh R; Fujiwara K; Uda S; Lemiti M, 2012, 'Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron', Applied Physics Letters, 100, http://dx.doi.org/10.1063/1.3680205

Rougieux FE; Zheng P; Thiboust M; Tan J; Grant NE; MacDonald DH; Cuevas A, 2012, 'A contactless method for determining the carrier mobility sum in silicon wafers', IEEE Journal of Photovoltaics, 2, pp. 41 - 46, http://dx.doi.org/10.1109/JPHOTOV.2011.2175705

Rougieux FE; Forster M; MacDonald D; Cuevas A; Lim B; Schmidt J, 2011, 'Recombination activity and impact of the boron-oxygen-related defect in compensated N-type silicon', IEEE Journal of Photovoltaics, 1, pp. 54 - 58, http://dx.doi.org/10.1109/JPHOTOV.2011.2165698

Rougieux FE; Lim B; Schmidt J; Forster M; MacDonald D; Cuevas A, 2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, 110, http://dx.doi.org/10.1063/1.3633492

Tan J; MacDonald D; Rougieux F; Cuevas A, 2011, 'Accurate measurement of the formation rate of iron-boron pairs in silicon', Semiconductor Science and Technology, 26, http://dx.doi.org/10.1088/0268-1242/26/5/055019

MacDonald D; Rougieux F; Mansoulie Y; Tan J; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2010, 'Scanning X-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon', Physica Status Solidi (A) Applications and Materials Science, 207, pp. 1807 - 1810, http://dx.doi.org/10.1002/pssa.201026137

Rougieux FE; MacDonald D; Cuevas A; Ruffell S; Schmidt J; Lim B; Knights AP, 2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p -type silicon', Journal of Applied Physics, 108, http://dx.doi.org/10.1063/1.3456076

Rougieux FE; MacDonald D; McIntosh KR; Cuevas A, 2010, 'Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon', Semiconductor Science and Technology, 25, http://dx.doi.org/10.1088/0268-1242/25/5/055009

MacDonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Light-induced boron-oxygen defect generation in compensated p -type Czochralski silicon', Journal of Applied Physics, 105, http://dx.doi.org/10.1063/1.3121208

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