Select Publications
Book Chapters
2012, 'Atomic-scale analysis of self-assembled quantum dots by cross-sectionalscanning, tunneling microscopy, and atom probe tomography', in Quantum Dots: Optics, Electron Transport and Future Applications, pp. 41 - 60, http://dx.doi.org/10.1017/CBO9780511998331.004
,Journal articles
2024, 'Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale', Advanced Materials, 36, http://dx.doi.org/10.1002/adma.202312736
,2024, 'High-fidelity initialization and control of electron and nuclear spins in a four-qubit register', Nature Nanotechnology, 19, pp. 605 - 611, http://dx.doi.org/10.1038/s41565-023-01596-9
,2024, 'Exploiting Atomic Control to Show When Atoms Become Molecules', Advanced Functional Materials, 34, http://dx.doi.org/10.1002/adfm.202307285
,2024, 'Machine Learning-Assisted Precision Manufacturing of Atom Qubits in Silicon', ACS Nano, http://dx.doi.org/10.1021/acsnano.4c00080
,2023, 'Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates', ACS Nano, 17, pp. 22601 - 22610, http://dx.doi.org/10.1021/acsnano.3c06668
,2023, 'Multi-Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions', Advanced Functional Materials, 33, http://dx.doi.org/10.1002/adfm.202214011
,2023, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202201625
,2023, 'High-Fidelity CNOT Gate for Donor Electron Spin Qubits in Silicon', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.024068
,2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202370039
,2022, 'Engineering topological states in atom-based semiconductor quantum dots', Nature, 606, pp. 694 - 699, http://dx.doi.org/10.1038/s41586-022-04706-0
,2022, 'Erratum: Benchmarking high fidelity single-shot readout of semiconductor qubits (New J. Phys. (2019) 21 (063011) DOI: 10.1088/1367-2630/ab242c/meta)', New Journal of Physics, 24, http://dx.doi.org/10.1088/1367-2630/ac7479
,2021, 'Monolithic Three-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction', Nano Letters, 21, pp. 10092 - 10098, http://dx.doi.org/10.1021/acs.nanolett.1c03879
,2021, 'Coherent control of a donor-molecule electron spin qubit in silicon', Nature Communications, 12, http://dx.doi.org/10.1038/s41467-021-23662-3
,2020, 'Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202003361
,2020, 'Quantum Computing: Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon (Adv. Mater. 40/2020)', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202070298
,2019, 'A two-qubit gate between phosphorus donor electrons in silicon', Nature, 571, pp. 371 - 375, http://dx.doi.org/10.1038/s41586-019-1381-2
,2019, 'Benchmarking high fidelity single-shot readout of semiconductor qubits', New Journal of Physics, 21, pp. 063011, http://dx.doi.org/10.1088/1367-2630/ab242c
,2019, 'Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor', Nature Nanotechnology, 14, pp. 137 - 140, http://dx.doi.org/10.1038/s41565-018-0338-1
,2018, 'Two-electron spin correlations in precision placed donors in silicon', Nature Communications, 9, pp. 980, http://dx.doi.org/10.1038/s41467-018-02982-x
,2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, 4, pp. eaaq1459, http://dx.doi.org/10.1126/sciadv.aaq1459
,2018, 'Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot', Applied Physics Letters, 112, pp. 243105, http://dx.doi.org/10.1063/1.5021500
,2017, 'Tunneling Statistics for Analysis of Spin-Readout Fidelity', Physical Review Applied, 8, pp. 034019, http://dx.doi.org/10.1103/PhysRevApplied.8.034019
,2017, 'High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon', Physical Review Letters, 119, http://dx.doi.org/10.1103/PhysRevLett.119.046802
,2016, 'Mapping the chemical potential landscape of a triple quantum dot', Physical Review B, 94, pp. 054314, http://dx.doi.org/10.1103/PhysRevB.94.054314
,2016, 'Extracting inter-dot tunnel couplings between few donor quantum dots in silicon', New Journal of Physics, 18, pp. 053041, http://dx.doi.org/10.1088/1367-2630/18/5/053041
,2015, 'Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers', ACS Nano, 9, pp. 12537 - 12541, http://dx.doi.org/10.1021/acsnano.5b06299
,2015, 'Precise shape engineering of epitaxial quantum dots by growth kinetics', Physical Review B - Condensed Matter and Materials Physics, 92, http://dx.doi.org/10.1103/PhysRevB.92.075425
,2015, 'The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers', ACS Nano, 9, pp. 7080 - 7084, http://dx.doi.org/10.1021/acsnano.5b01638
,2014, 'Erratum: "Height control of self-assembled quantum dots by strain engineering during capping" (Applied Physics Letters (2014) 105, (143104))', Applied Physics Letters, 105, http://dx.doi.org/10.1063/1.4901731
,2014, 'Height control of self-assembled quantum dots by strain engineering during capping', Applied Physics Letters, 105, http://dx.doi.org/10.1063/1.4897345
,2014, 'Low resistivity, super-saturation phosphorus-in-silicon monolayer doping', Applied Physics Letters, 104, pp. 123502, http://dx.doi.org/10.1063/1.4869111
,2014, 'Single-charge detection by an atomic precision tunnel junction', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4869032
,2014, 'InAs quantum dot morphology after capping with In, N, Sb alloyed thin films', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4864159
,2013, 'Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of in nanocrystals', Applied Physics Letters, 102, http://dx.doi.org/10.1063/1.4792700
,2012, 'Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing', Applied Physics Letters, 101, http://dx.doi.org/10.1063/1.4770371
,2012, 'Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots', Physical Review B - Condensed Matter and Materials Physics, 85, http://dx.doi.org/10.1103/PhysRevB.85.155326
,2012, 'Highly nonlinear excitonic Zeeman spin splitting in composition-engineered artificial atoms', Physical Review B - Condensed Matter and Materials Physics, 85, http://dx.doi.org/10.1103/PhysRevB.85.165433
,2011, 'Erratum: Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311) A substrate (Applied Physics Letters (2011) 98 (193112))', Applied Physics Letters, 99, http://dx.doi.org/10.1063/1.3633014
,2011, 'Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.205308
,2011, 'Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy', Journal of Applied Physics, 109, http://dx.doi.org/10.1063/1.3577960
,2011, 'Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate', Applied Physics Letters, 98, http://dx.doi.org/10.1063/1.3589965
,2011, 'Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy', Applied Physics Express, 4, http://dx.doi.org/10.1143/APEX.4.055501
,2011, 'Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.161303
,2011, 'Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure', Nanotechnology, 22, http://dx.doi.org/10.1088/0957-4484/22/5/055703
,2010, 'Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy', Applied Physics Letters, 96, http://dx.doi.org/10.1063/1.3303979
,2010, 'An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step', Nanotechnology, 21, http://dx.doi.org/10.1088/0957-4484/21/21/215705
,2010, 'Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea', Nature Physics, 6, pp. 534 - 538, http://dx.doi.org/10.1038/nphys1673
,2009, 'Simple and efficient scanning tunneling luminescence detection at low-temperature', Review of Scientific Instruments, 80, http://dx.doi.org/10.1063/1.3274675
,2008, 'A comparison of the physical properties of four new generation flexible ureteroscopes: (De)flection, flow properties, torsion stiffness, and optical characteristics: Editorial comment', International Braz J Urol, 34, pp. 776
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