By Dr Joris Gerhard Keizer

Patents

Keizer J; Simmons M, 2023, A method for selective incorporation of dopant atoms in a semiconductive surface, Patent No. Australia - 2019262099; Austria, Europe, France, Netherlands, Spain, Sweden, Switzerland, United Kingdom - 3787998; Germany - 602019027521.8; India - 474003; Italy - 502023000024528; Taiwan - I815883

Simmons M; Keizer J, 2022, A method for selective incorporation of dopant atoms in a semiconductive surface, Patent No. United States - 11227768

Simmons M; Keizer J; Koch M, 2019, A method of fabricating a three dimensional electronic structure, Patent No. United States patent no. 10373914; Australia patent no. 2017203949, http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=10373914.PN.&OS=PN/10373914&RS=PN/10373914

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