By Dr Wee Han Lim

Journal articles

Liles SD; Halverson DJ; Wang Z; Shamim A; Eggli RS; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Culcer D; Dzurak AS; Hamilton AR, 2024, 'A singlet-triplet hole-spin qubit in MOS silicon', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-51902-9

Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng MK; Itoh K; Abrosimov N; Pohl HJ; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2024, 'Bounds to electron spin qubit variability for scalable CMOS architectures', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-48557-x

Hansen I; Seedhouse AE; Serrano S; Nickl A; Feng MK; Huang JY; Tanttu T; Dumoulin Stuyck N; Lim WH; Hudson FE; Itoh KM; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2024, 'Entangling gates on degenerate spin qubits dressed by a global field', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-52010-4

Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl HJ; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2024, 'Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays', Physical Review B, 110, http://dx.doi.org/10.1103/PhysRevB.110.125414

Huang JY; Su RY; Lim WH; Feng MK; van Straaten B; Severin B; Gilbert W; Dumoulin Stuyck N; Tanttu T; Serrano S; Cifuentes JD; Hansen I; Seedhouse AE; Vahapoglu E; Leon RCC; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Escott CC; Ares N; Bartlett SD; Morello A; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2024, 'High-fidelity spin qubit operation and algorithmic initialization above 1 K', Nature, 627, pp. 772 - 777, http://dx.doi.org/10.1038/s41586-024-07160-2

Dumoulin Stuyck N; Seedhouse AE; Serrano S; Tanttu T; Gilbert W; Huang JY; Hudson F; Itoh KM; Laucht A; Lim WH; Yang CH; Saraiva A; Dzurak AS, 2024, 'Silicon spin qubit noise characterization using real-time feedback protocols and wavelet analysis', Applied Physics Letters, 124, http://dx.doi.org/10.1063/5.0179958

Tanttu T; Lim WH; Huang JY; Dumoulin Stuyck N; Gilbert W; Su RY; Feng MK; Cifuentes JD; Seedhouse AE; Seritan SK; Ostrove CI; Rudinger KM; Leon RCC; Huang W; Escott CC; Itoh KM; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Blume-Kohout R; Bartlett SD; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2024, 'Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots', Nature Physics, http://dx.doi.org/10.1038/s41567-024-02614-w

Serrano S; Feng MK; Lim WH; Seedhouse AE; Tanttu T; Gilbert W; Escott CC; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Saraiva A; Dzurak AS; Laucht A, 2024, 'Improved Single-Shot Qubit Readout Using Twin rf-SET Charge Correlations', PRX Quantum, 5, http://dx.doi.org/10.1103/PRXQuantum.5.010301

Wang Z; Feng MK; Serrano S; Gilbert W; Leon RCC; Tanttu T; Mai P; Liang D; Huang JY; Su Y; Lim WH; Hudson FE; Escott CC; Morello A; Yang CH; Dzurak AS; Saraiva A; Laucht A, 2023, 'Jellybean Quantum Dots in Silicon for Qubit Coupling and On-Chip Quantum Chemistry', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202208557

Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2023, 'Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform', Nano Letters, 23, pp. 1261 - 1266, http://dx.doi.org/10.1021/acs.nanolett.2c04417

Gilbert W; Tanttu T; Lim WH; Feng MK; Huang JY; Cifuentes JD; Serrano S; Mai PY; Leon RCC; Escott CC; Itoh KM; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2023, 'On-demand electrical control of spin qubits', Nature Nanotechnology, 18, pp. 131 - 136, http://dx.doi.org/10.1038/s41565-022-01280-4

Vahapoglu E; Slack-Smith JP; Leon RCC; Lim WH; Hudson FE; Day T; Cifuentes JD; Tanttu T; Yang CH; Saraiva A; Abrosimov NV; Pohl HJ; Thewalt MLW; Laucht A; Dzurak AS; Pla JJ, 2022, 'Coherent control of electron spin qubits in silicon using a global field', npj Quantum Information, 8, http://dx.doi.org/10.1038/s41534-022-00645-w

Saraiva A; Lim WH; Yang CH; Escott CC; Laucht A; Dzurak AS, 2022, 'Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits', Advanced Functional Materials, 32, http://dx.doi.org/10.1002/adfm.202105488

Vahapoglu E; Slack-Smith JP; Leon RCC; Lim WH; Hudson FE; Day T; Tanttu T; Yang CH; Laucht A; Dzurak AS; Pla JJ, 2021, 'Single-electron spin resonance in a nanoelectronic device using a global field', Science Advances, 7, http://dx.doi.org/10.1126/sciadv.abg9158

Huang JY; Lim WH; Leon RCC; Yang CH; Hudson FE; Escott CC; Saraiva A; Dzurak AS; Laucht A, 2021, 'A High-Sensitivity Charge Sensor for Silicon Qubits above 1 K', Nano Letters, 21, pp. 6328 - 6335, http://dx.doi.org/10.1021/acs.nanolett.1c01003

Gilbert W; Saraiva A; Lim WH; Yang CH; Laucht A; Bertrand B; Rambal N; Hutin L; Escott CC; Vinet M; Dzurak AS, 2020, 'Single-electron operation of a silicon-CMOS 2 × 2 quantum dot array with integrated charge sensing', Nano Letters, 20, pp. 7882 - 7888, http://dx.doi.org/10.1021/acs.nanolett.0c02397

Mueller FB; Schouten RN; Brauns M; Gang T; Han Lim W; Shyan Lai N; Dzurak AS; van der Wiel WG; Zwanenburg FA, 2016, 'Erratum: Printed circuit board metal powder filters for low electron temperatures (Review of Scientific Instruments (2013) 84 (044706))', Review of Scientific Instruments, 87, http://dx.doi.org/10.1063/1.4959151

Yang CH; Rossi A; Lai NS; Leon R; Lim WH; Dzurak AS, 2014, 'Charge state hysteresis in semiconductor quantum dots', Applied Physics Letters, 105, http://dx.doi.org/10.1063/1.4901218

Zimmerman NM; Yang CH; Shyan Lai N; Han Lim W; Dzurak AS, 2014, 'Charge offset stability in Si single electron devices with Al gates', Nanotechnology, 25, http://dx.doi.org/10.1088/0957-4484/25/40/405201

Pla JJ; Tan K; Dehollain JP; Lim WH; Morton JJL; Jamieson DN; Dzurak A; Morello A, 2012, 'A single-atom electron spin qubit in silicon', Nature, 489, pp. 541 - 544, http://dx.doi.org/10.1038/nature11449

Yang CH; Lim WH; Zwanenburg FA; Dzurak A, 2011, 'Dynamically controlled charge sensing of a few-electron silicon quantum dot', AIP Advances, 1, http://dx.doi.org/10.1063/1.3654496

Lai ; Lim WH; Yang CH; Zwanenburg FA; Cosih WA; Qassemi F; Morello A; Dzurak A, 2011, 'Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot', Scientific Reports, 1, http://dx.doi.org/10.1038/srep00110

Chan KW; Mottonen M; Kemppinen A; Lai ; Tan K; Lim WH; Dzurak A, 2011, 'Single-electron shuttle based on a silicon quantum dot', Applied Physics Letters, 98, pp. Article number: 212103, http://dx.doi.org/10.1063/1.3593491

Lim WH; Yang CH; Zwanenburg FA; Dzurak A, 2011, 'Spin filling of valley-orbit states in a silicon quantum dot', Nanotechnology, 22, pp. Article number: 335704, http://dx.doi.org/10.1088/0957-4484/22/33/335704

Lim WH; Ziebell A; Cornelius I; Reinhard M; Prokopovich D; Dzurak A; Rosenfeld A, 2009, 'Cylindrical silicon-on-insulator microdosimeter: Design, fabrication and TCAD modeling', IEEE Transactions on Nuclear Science, 56, pp. 424 - 428

Dzurak A; Lim WH; Lai ; Ziebell A; Rosenfeld A; Reinhard M, 2009, 'Development and Fabrication of Cylindrical Silicon-on-Insulator Microdosimeter Arrays', IEEE Transactions on Nuclear Science, 56, pp. 1637

Lim WH; Huebl H; Willems Van Beveren LH; Spizzirri PG; Clark RG; Dzurak A; Rubanov S; Angus SJ, 2009, 'Electrostatically defined few-electron double quantum dot in silicon', Applied Physics Letters, 94, pp. 173502-1 - 173502-3, http://dx.doi.org/10.1063/1.3124242

Lim WH; Zwanenburg FA; Huebl H; Mottonen M; Chan KW; Morello A; Dzurak A, 2009, 'Observation of the single-electron regime in a highly tunable silicon quantum dot', Applied Physics Letters, 95, pp. 242102-1 - 242102-3, http://dx.doi.org/10.1063/1.3272858

Ziebell A; Lim WH; Reinhard M; Cornelius I; Prokopovich D; Siegele R; Dzurak A; Rosenfeld A, 2008, 'A Cylindrical Silicon-on-Insulator Microdosimeter: Charge Collection Characteristics', IEEE Transactions on Nuclear Science, 55, pp. 3414 - 3420

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