By Dr Zhuangyi Zhou

Journal articles

Le TT; Zhou Z; Chen A; Yang Z; Rougieux F; Macdonald D; Liu AY, 2024, 'Reassessing iron-gallium recombination activity in silicon', Journal of Applied Physics, 135, http://dx.doi.org/10.1063/5.0198737

Yi C; Zhou Z; Juhl MK; Tong J; Fong KC; Rougieux FE; Bremner S, 2023, 'Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing', AIP Advances, 13, http://dx.doi.org/10.1063/5.0117424

Zhou Z; Rougieux F; Siriwardhana M; Coletti G, 2022, 'Characterisation of striations in n-type silicon wafer processed with polysilicon contacts', Solar Energy Materials and Solar Cells, 248, http://dx.doi.org/10.1016/j.solmat.2022.111965

Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon', IEEE Journal of Photovoltaics, 12, pp. 1369 - 1376, http://dx.doi.org/10.1109/JPHOTOV.2022.3195098

Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2022, 'Electronic Properties of the Boron-Oxygen Defect Precursor of the Light-Induced Degradation in Silicon', IEEE Journal of Photovoltaics, 12, pp. 1135 - 1141, http://dx.doi.org/10.1109/JPHOTOV.2022.3190769

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